PMV20EN [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;
| 型号： | PMV20EN |
| 厂家： | 
Nexperia |
| 描述： | 30 V, N-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMV20EN
30 V, N-channel Trench MOSFET
5 July 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Logic level compatible
•
•
•
Very fast switching
Trench MOSFET technology
Enhanced power dissipation capability of 1200 mW
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 6 A; Tj = 25 °C
[1]
7.6
A
Static characteristics
RDSon drain-source on-state
resistance
-
17
21
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
3
D
G
S
D
gate
2
source
drain
G
3
S
017aaa253
1
2
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMV20EN
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PMV20EN
%KC
[1] % = placeholder for manufacturing site code
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
2 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
7.6
6
A
-
A
-
3.8
24
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
510
1200
6940
150
150
150
mW
mW
mW
°C
°C
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
1.1
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
3 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
aaa-013408
2
10
l
D
(A)
t
p
= 10 µs
10
t
= 100 µs
p
t
= 1 ms
p
1
t
= 10 ms
= 100 ms
p
2
DC; T
= 25 °C; 6 cm
amb
t
p
-1
DC; T = 25 °C
sp
10
10
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
4 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
208
88
Max
245
104
65
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
55
Rth(j-sp)
thermal resistance
from junction to solder
point
13
18
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-013409
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
10
-1
2
3
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013411
3
10
duty cycle = 1
0.75
0.50
0.33
Z
th(j-a)
(K/W)
2
10
10
0.25
0.02
0.20
0.10
0.05
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
5 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
1.5
2
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 6 A; Tj = 25 °C
VGS = 10 V; ID = 6 A; Tj = 150 °C
VGS = 4.5 V; ID = 5.4 A; Tj = 25 °C
VDS = 10 V; ID = 2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
1
µA
nA
nA
mΩ
mΩ
mΩ
S
-
100
-100
21
34
26
-
-
RDSon
drain-source on-state
resistance
17
27
21
13
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
1.7
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 5 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
7.2
1
10.8
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
0.7
435
90
35
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 5 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
9
-
-
-
-
ns
ns
ns
ns
17
9
turn-off delay time
fall time
8
Source-drain diode
VSD
source-drain voltage
IS = 1.1 A; VGS = 0 V; Tj = 25 °C
-
0.75
1.2
V
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
6 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
aaa-013412
017aaa545
-2
-3
-4
-5
-6
24
10
D
10 V
I
I
(A)
D
4.5 V
3.2 V
(A)
3.8 V
10
16
min
typ
max
10
10
10
2.8 V
8
2.5 V
V
= 2.2 V
GS
0
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
(V)
V
(V)
V
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa546
017aaa547
0.10
0.10
R
DSon
(Ω)
R
DSon
(Ω)
2.5 V
3.0 V
3.25 V
V
= 2.75 V
GS
0.08
0.06
0.04
0.02
0.00
0.08
0.06
0.04
0.02
0.00
T = 150 °C
j
3.5 V
4.5 V
3.75 V
10 V
T = 25 °C
j
0
5
10
15
20
25
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = 8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
7 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
017aaa548
017aaa549
30
1.8
1.4
1.0
0.6
I
a
D
(A)
20
10
T = 150 °C
j
T = 25 °C
j
0
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa560
017aaa550
3
2.5
10
V
GS(th)
(V)
C
iss
2.0
1.5
1.0
0.5
0.0
max
typ
C
(pF)
2
10
C
oss
min
C
rss
10
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
8 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
017aaa551
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 15. Gate charge waveform definitions
0
2
4
6
8
Q
G
(nC)
ID = 5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa552
2.5
I
S
(A)
2.0
1.5
1.0
0.5
0.0
T = 150 °C
j
T = 25 °C
j
0.0
0.2
0.4
0.6
0.8
1.0
(V)
V
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
9 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT23
B
D
A
E
X
H
E
v
A
3
Q
A
A
1
c
1
2
e
1
b
w
B
L
p
p
e
detail X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
c
D
E
e
e
1
H
E
L
p
Q
v
w
1
p
max 1.1 0.1 0.48 0.15 3.0 1.4
nom
2.5 0.45 0.55
2.1 0.15 0.45
mm
1.9 0.95
0.2 0.1
0.9
0.38 0.09 2.8 1.2
min
sot023_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-06-19
14-09-22
SOT23
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
10 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
11 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
PMV20EN v.2
Modifications:
Release date
20180705
Data sheet status
Change notice
Supersedes
Product data sheet
-
PMV20EN v.1
•
Adaption of the typical value of gfs according to new wafer fab
PMV20EN v.1
20140605 Product data sheet
-
-
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
12 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Data sheet status
Document status Product
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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customer’s applications and products using Nexperia products in order to
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Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
13 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMV20EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
14 / 15
Nexperia
PMV20EN
30 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information.......................................................13
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 5 July 2018
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All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
5 July 2018
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