PMZB150UNE [NEXPERIA]

20 V, N-channel Trench MOSFETProduction;
PMZB150UNE
型号: PMZB150UNE
厂家: Nexperia    Nexperia
描述:

20 V, N-channel Trench MOSFETProduction

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PMZB150UNE  
20 V, N-channel Trench MOSFET  
24 March 2015  
Product data sheet  
1. General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small  
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench  
MOSFET technology.  
2. Features and benefits  
Very fast switching  
Low threshold voltage  
Trench MOSFET technology  
ElectroStatic Discharge (ESD) protection: 2 kV HBM  
Ultra thin package profile of 0.37 mm  
3. Applications  
Relay driver  
High-speed line driver  
Low-side loadswitch  
Switching circuits  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
Unit  
V
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-8  
-
8
V
VGS = 4.5 V; Tamb = 25 °C  
[1]  
1.5  
A
Static characteristics  
RDSon drain-source on-state  
VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C  
-
170  
200  
mΩ  
resistance  
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
[1]  
 
 
 
 
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
5. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
D
1
2
3
G
S
D
gate  
1
2
3
source  
drain  
G
Transparent  
top view  
DFN1006B-3 (SOT883B)  
S
017aaa255  
6. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMZB150UNE  
DFN1006B-3  
DFN1006B-3: leadless ultra small plastic package; 3 solder  
lands; body 1.0 x 0.6 x 0.37 mm  
SOT883B  
7. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
PMZB150UNE  
0101 0000  
PIN 1 INDICATION  
READING DIRECTION  
READING EXAMPLE:  
0111  
1011  
MARKING CODE  
(EXAMPLE)  
READING DIRECTION  
006aac673  
Fig. 1. DFN1006B-3 (SOT883B) binary marking code description  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
2 / 15  
 
 
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
20  
8
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
VGS  
-8  
V
ID  
VGS = 4.5 V; Tamb = 25 °C  
VGS = 4.5 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
[1]  
[1]  
-
1.5  
1
A
-
A
IDM  
Ptot  
peak drain current  
-
6
A
total power dissipation  
[2]  
[1]  
-
350  
760  
mW  
mW  
-
Tsp = 25 °C  
-
6250 mW  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
150  
150  
150  
°C  
°C  
°C  
Tamb  
Tstg  
Source-drain diode  
IS source current  
Tamb = 25 °C  
[1]  
-
0.7  
A
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
[1]  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
017aaa123  
017aaa124  
120  
120  
P
der  
(%)  
I
der  
(%)  
80  
80  
40  
40  
0
- 75  
0
- 75  
- 25  
25  
75  
125  
175  
- 25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig. 2. Normalized total power dissipation as a  
function of junction temperature  
Fig. 3. Normalized continuous drain current as a  
function of junction temperature  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
3 / 15  
 
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
aaa-016025  
10  
t
= 10 µs  
p
p
p
I
D
(A)  
Limit R  
= V /I  
DS  
DSon  
D
t
t
= 100 µs  
1
= 1 ms  
DC; T = 25 °C  
sp  
t
= 10 ms  
= 100 ms  
-1  
p
10  
10  
DC; T  
= 25 °C;  
amb  
drain mounting pad 1 cm  
t
p
2
-2  
-1  
2
10  
1
10  
10  
V
(V)  
DS  
IDM = single pulse  
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-  
source voltage  
9. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
315  
145  
Max  
360  
165  
Unit  
K/W  
K/W  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
[1]  
[2]  
-
-
Rth(j-sp)  
thermal resistance  
from junction to solder  
point  
-
17  
20  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2]  
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
4 / 15  
 
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
aaa-016012  
3
10  
Z
duty cycle = 1  
0.75  
th(j-a)  
(K/W)  
0.50  
0.33  
0.20  
2
10  
0.10  
0.02  
0.25  
0.05  
0.01  
0
10  
-3  
10  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-016013  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
2
10  
0.50  
0.33  
0.20  
0.10  
0.25  
0.05  
0.02  
0.01  
0
10  
-3  
10  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for drain 1 cm2  
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
5 / 15  
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
10. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
20  
-
-
V
V
VGSth  
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C  
voltage  
0.45  
0.7  
0.95  
IDSS  
IGSS  
drain leakage current  
gate leakage current  
VDS = 20 V; VGS = 0 V; Tj = 25 °C  
VGS = 8 V; VDS = 0 V; Tj = 25 °C  
VGS = -8 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C  
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C  
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C  
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C  
VGS = 4.5 V; ID = 1.5 A; Tj = 150 °C  
VGS = 2.5 V; ID = 1.4 A; Tj = 25 °C  
VGS = 1.8 V; ID = 0.25 A; Tj = 25 °C  
VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C  
VDS = 10 V; ID = 1.2 A; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA  
µA  
µA  
µA  
µA  
nA  
nA  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
S
-
5
-
-5  
-
1
-
-1  
-
100  
-100  
200  
280  
270  
340  
570  
-
-
RDSon  
drain-source on-state  
resistance  
170  
230  
200  
240  
300  
3.5  
gfs  
forward  
transconductance  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
VDS = 10 V; ID = 1.6 A; VGS = 4.5 V;  
Tj = 25 °C  
-
-
-
-
-
-
1.6  
0.15  
0.44  
93  
-
-
-
-
-
-
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VDS = 10 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
Coss  
Crss  
18  
reverse transfer  
capacitance  
16  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 10 V; ID = 1.6 A; VGS = 4.5 V;  
RG(ext) = 6 Ω; Tj = 25 °C  
-
-
-
-
5.3  
12  
16  
5
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
VSD  
source-drain voltage  
IS = 0.7 A; VGS = 0 V; Tj = 25 °C  
-
0.8  
1.2  
V
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
6 / 15  
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
aaa-016014  
aaa-016015  
-3  
-4  
-5  
-6  
4
10  
D
2.5 V  
4.5 V  
I
D
I
(A)  
(A)  
2.0 V  
1.8 V  
3
2
1
0
10  
(3)  
(2)  
(1)  
10  
10  
V
= 1.5 V  
GS  
0
1
2
3
4
0
0.5  
1
1.5  
V
(V)  
V
(V)  
DS  
GS  
Tj = 25 °C  
Tj = 25 °C; VDS = 5 V  
(1) minimum values  
(2) typical values  
Fig. 7. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
(3) maximum values  
Fig. 8. Sub-threshold drain current as a function of  
gate-source voltage  
aaa-016016  
aaa-016017  
1.0  
1.0  
R
DSon  
(Ω)  
R
DSon  
(Ω)  
V
= 1.5 V  
1.8 V  
2.0 V  
GS  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
2.5 V  
3.0 V  
(1)  
(2)  
4.5 V  
0
1
2
3
4
0
1
2
3
4
5
I
D
(A)  
V
(V)  
GS  
Tj = 25 °C  
ID = 0.2 A  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig. 9. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig. 10. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
7 / 15  
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
aaa-016018  
aaa-016019  
4
2.0  
1.5  
1.0  
0.5  
0
T = 150 °C  
j
I
a
D
(A)  
T = 25 °C  
j
3
2
1
0
0
1
2
3
4
-60  
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
VDS > ID × RDSon  
Fig. 12. Normalized drain-source on-state resistance  
as a function of junction temperature; typical  
values  
Fig. 11. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
aaa-016020  
aaa-016021  
3
1.5  
10  
C
(pF)  
V
GS(th)  
(V)  
(1)  
2
1.0  
0.5  
0
10  
(1)  
(2)  
(3)  
(2)  
(3)  
10  
1
10  
-1  
2
-60  
0
60  
120  
180  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
ID = 0.25 mA; VDS = VGS  
(1) maximum values  
(2) typical values  
f = 1 MHz; VGS = 0 V  
(1) Ciss  
(2) Coss  
(3) minimum values  
(3) Crss  
Fig. 13. Gate-source threshold voltage as a function of  
junction temperature  
Fig. 14. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
8 / 15  
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
aaa-016022  
5
V
DS  
V
GS  
(V)  
I
4
3
2
1
0
D
V
GS(pl)  
V
GS(th)  
GS  
V
Q
Q
GS2  
GS1  
Q
Q
GD  
GS  
Q
G(tot)  
003aaa508  
Fig. 16. MOSFET transistor: Gate charge waveform  
definitions  
0
0.5  
1.0  
1.5  
2.0  
Q
G
(nC)  
ID = 1.6 A; VDS = 10 V; Tamb = 25 °C  
Fig. 15. Gate-source voltage as a function of gate  
charge; typical values  
aaa-016023  
4
I
S
(A)  
3
2
1
0
(1)  
(2)  
0
0.4  
0.8  
1.2  
1.6  
V
(V)  
SD  
VGS = 0 V  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig. 17. Source current as a function of source-drain voltage; typical values  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
9 / 15  
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
11. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig. 18. Duty cycle definition  
12. Package outline  
0.65  
0.55  
0.40  
0.34  
0.35  
0.20  
0.12  
0.04 max  
1
2
0.30  
0.22  
1.05  
0.95  
0.65  
0.30  
0.22  
3
0.55  
0.47  
Dimensions in mm  
11-11-02  
Fig. 19. Package outline DFN1006B-3 (SOT883B)  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
10 / 15  
 
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
13. Soldering  
Footprint information for reflow soldering  
SOT883B  
1.3  
0.7  
R0.05 (8x)  
0.9  
0.7  
0.6  
0.25  
(2x)  
0.3  
(2x)  
0.3  
0.4  
0.4  
(2x)  
solder land  
solder land plus solder paste  
solder paste deposit  
occupied area  
solder resist  
Dimensions in mm  
sot883b_fr  
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
11 / 15  
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
14. Revision history  
Table 8.  
Revision history  
Data sheet ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PMZB150UNE v.1  
20150324  
Product data sheet  
-
-
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
12 / 15  
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
15. Legal information  
15.1 Data sheet status  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Right to make changes — Nexperia reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Suitability for use — Nexperia products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia and its suppliers accept no liability for  
inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nexperia.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
15.2 Definitions  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Customers are responsible for the design and operation of their  
applications and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the Nexperia product is suitable and fit for the  
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associated with their applications and products.  
Draft — The document is a draft version only. The content is still under  
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modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
Nexperia does not accept any liability related to any default,  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local Nexperia  
sales office. In case of any inconsistency or conflict with the  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using Nexperia  
products in order to avoid a default of the applications  
and the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
short data sheet, the full data sheet shall prevail.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Terms and conditions of commercial sale — Nexperia  
15.3 Disclaimers  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no  
responsibility for the content in this document if provided by an information  
source outside of Nexperia.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
13 / 15  
 
 
 
 
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor  
tested in accordance with automotive testing or application requirements.  
Nexperia accepts no liability for inclusion and/or use of non-  
automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty  
of the product for such automotive applications, use and specifications, and  
(b) whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond Nexperia’s  
standard warranty and Nexperia’s product specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
15.4 Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
14 / 15  
 
Nexperia  
PMZB150UNE  
20 V, N-channel Trench MOSFET  
16. Contents  
1
General description ............................................... 1  
2
Features and benefits ............................................1  
Applications ........................................................... 1  
Quick reference data ............................................. 1  
Pinning information ...............................................2  
Ordering information .............................................2  
Marking ...................................................................2  
Limiting values .......................................................3  
Thermal characteristics .........................................4  
Characteristics .......................................................6  
Test information ...................................................10  
Package outline ................................................... 10  
Soldering .............................................................. 11  
Revision history ...................................................12  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Legal information .................................................13  
Data sheet status ............................................... 13  
Definitions ...........................................................13  
Disclaimers .........................................................13  
Trademarks ........................................................ 14  
15.1  
15.2  
15.3  
15.4  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 24 March 2015  
©
PMZB150UNE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
24 March 2015  
15 / 15  

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