PQMD13 [NEXPERIA]

NPN/PNP resistor-equipped transistors; R1=4.7kΩ,R2=47kΩProduction;
PQMD13
型号: PQMD13
厂家: Nexperia    Nexperia
描述:

NPN/PNP resistor-equipped transistors; R1=4.7kΩ,R2=47kΩProduction

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PQMD13  
NPN/PNP resistor-equipped transistors;  
R1 = 4.7 kΩ, R2 = 47 kΩ  
4 November 2015  
Product data sheet  
1. General description  
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small  
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.  
NPN/NPN complement: PQMH13  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplifies circuit design  
Low package height of 0.37 mm  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
3. Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
Mobile applications  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-
-
50  
V
IO  
output current  
100  
mA  
Per transistor; for the PNP transistor with negative polarity  
R1  
bias resistor 1  
Tamb = 25 °C  
[1]  
[1]  
3.3  
8
4.7  
10  
6.1  
12  
kΩ  
R2/R1  
bias resistor ratio  
[1] See section "Test information" for resistor calculation and test conditions.  
 
 
 
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
5. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
O1 I2  
GND2  
TR2  
1
2
3
4
5
6
7
8
GND1  
I1  
GND (emitter) TR1  
1
6
5
4
7
input ( base) TR1  
R1  
R2  
O2  
output (collector) TR2  
GND (emitter) TR2  
input ( base) TR2  
2
GND2  
I2  
TR1  
R2  
8
3
R1  
O1  
output (collector) TR1  
output (collector) TR1  
output (collector) TR2  
Transparent top view  
GND1  
I1 O2  
aaa-007379  
O1  
DFN1010B-6 (SOT1216)  
O2  
6. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PQMD13  
DFN1010B-6  
DFN1010B-6: plastic thermal enhanced ultra thin small SOT1216  
outline package; no leads; 6 terminals  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
2 / 17  
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
7. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
PQMD13  
B 011  
READING  
DIRECTION  
MARKING CODE  
(EXAMPLE)  
MARK-FREE AREA  
PIN 1  
INDICATION MARK  
READING EXAMPLE:  
A 110  
YEAR DATE CODE  
aaa-019766  
VENDOR CODE  
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
3 / 17  
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
8. Limiting values  
Table 5.  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter Conditions  
Limiting values  
Min  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCBO  
VCEO  
VEBO  
VI  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
open emitter  
open base  
-
-
-
-
-
-
-
-
-
-
50  
50  
5
V
V
open collector  
TR1; positive  
TR1; negative  
TR2; positive  
TR2; negative  
V
30  
-5  
V
V
5
V
-30  
100  
100  
230  
V
IO  
output current  
mA  
mA  
mW  
ICM  
peak collector current  
total power dissipation  
tp ≤ 1 ms; single pulse  
Tamb ≤ 25 °C  
Ptot  
[1]  
[1]  
Per device  
Ptot  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb ≤ 25 °C  
-
350  
150  
150  
150  
mW  
°C  
Tj  
-
Tamb  
Tstg  
-55  
-65  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
aaa-007377  
400  
P
tot  
(mW)  
300  
200  
100  
0
-75  
-25  
25  
75  
125  
175  
(°C)  
T
amb  
FR4 PCB, standard footprint  
Fig. 2. Per device: Power derating curve  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
4 / 17  
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
9. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
[1]  
[1]  
-
-
543  
K/W  
Per device  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
-
-
357  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
aaa-007378  
3
10  
duty cycle =  
1
Z
th(j-a)  
(K/W)  
0.75  
0.33  
0.5  
2
0.2  
10  
0.1  
0.05  
0.01  
0.02  
0
10  
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
5 / 17  
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
10. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
ICBO  
collector-base cut-off  
current (emitter open)  
VCB = 50 V; IE = 0 A; Tamb = 25 °C  
-
-
100  
nA  
ICEO  
collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
1
µA  
µA  
µA  
current (base open)  
VCE = 30 V; IB = 0 A; Tamb = 150 °C  
5
IEBO  
emitter-base cut-off  
VEB = 5 V; IC = 0 A; Tamb = 25 °C  
170  
current (collector open)  
hFE  
DC current gain  
VCE = 5 V; IC = 10 mA; Tamb = 25 °C  
IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C  
100  
-
-
-
-
VCEsat  
collector-emitter  
100  
mV  
saturation voltage  
VI(off)  
VI(on)  
R1  
off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C  
on-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C  
-
0.6  
0.9  
4.7  
10  
-
0.5  
-
V
1.3  
3.3  
8
V
bias resistor 1  
Tamb = 25 °C  
[1]  
[1]  
6.1  
12  
2.5  
kΩ  
R2/R1  
CC  
bias resistor ratio  
collector capacitance  
VCB = 10 V; IE = 0 A; f = 1 MHz;  
Tamb = 25 °C; TR1 (NPN)  
-
pF  
VCB = -10 V; IE = 0 A; f = 1 MHz;  
Tamb = 25 °C; TR2 (PNP)  
-
-
-
-
3
-
pF  
fT  
transition frequency  
VCE = 5 V; IC = 10 mA; f = 100 MHz;  
Tamb = 25 °C; TR1 (NPN)  
[2]  
[2]  
230  
180  
MHz  
MHz  
VCE = -5 V; IC = -10 mA; f = 100 MHz;  
Tamb = 25 °C; TR2 (PNP)  
-
[1] See section "Test information" for resistor calculation and test conditions.  
[2] Characteristics of built-in transistor  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
6 / 17  
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
006aac819  
aaa-018581  
3
10  
0.1  
0.63 mA  
0.56 mA  
0.70 mA  
I
C
(A)  
h
FE  
(1)  
0.08  
0.49 mA  
0.42 mA  
(2)  
(3)  
2
10  
0.35 mA  
0.28 mA  
0.06  
0.04  
0.02  
0
0.21 mA  
0.14 mA  
10  
I
= 0.07 mA  
B
1
10  
-1  
2
1
10  
10  
0
1
2
3
4
5
I
(mA)  
V
(V)  
CE  
C
VCE = 5 V  
Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
Fig. 5. NPN transistor: Collector current as a function  
of collector-emitter voltage; typical values  
Fig. 4. NPN transistor: DC current gain as a function of  
collector current; typical values  
aaa-018585  
006aac821  
1
10  
V
V
I(on)  
(V)  
CEsat  
(V)  
(1)  
-1  
10  
1
(2)  
(3)  
(1)  
(2)  
(3)  
-2  
-1  
10  
10  
-1  
2
-1  
2
10  
1
10  
10  
10  
1
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
VCE = 0.3 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 6. NPN transistor: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig. 7. NPN transistor: On-state input voltage as a  
function of collector current; typical values  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
7 / 17  
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
006aac822  
006aac823  
10  
3
2
1
0
C
(pF)  
c
V
I(off)  
(V)  
(1)  
1
(2)  
(3)  
-1  
10  
-1  
10  
1
10  
0
10  
20  
30  
40  
50  
I
(mA)  
V
(V)  
CB  
C
VCE = 5 V  
f = 1 MHz; Tamb = 25 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 9. NPN transistor: Collector capacitance as a  
function of collector-base voltage; typical  
values  
Fig. 8. NPN transistor: Off-state input voltage as a  
function of collector current; typical values  
006aac757  
006aac824  
3
3
10  
10  
h
FE  
(1)  
f
T
(2)  
(MHz)  
(3)  
2
10  
2
10  
10  
10  
10  
1
-1  
2
-1  
-10  
2
1
10  
10  
-1  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V; Tamb = 25 °C  
VCE = -5 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
Fig. 10. NPN transistor: Transition frequency as a  
function of collector current; typical values of  
built-in transistor  
Fig. 11. PNP transistor: DC current gain as a function of  
collector current; typical values  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
8 / 17  
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
aaa-018917  
aaa-018914  
-0.1  
-1  
-0.70 mA  
I
C
(A)  
-0.63 mA  
-0.56 mA  
-0.08  
V
CEsat  
(V)  
-0.49 mA  
-0.42 mA  
-0.35 mA  
-0.06  
-0.04  
-0.02  
0
-1  
-10  
-0.28 mA  
-0.21 mA  
(1)  
(2)  
(3)  
-0.14 mA  
I
= -0.07 mA  
B
-2  
-10  
-1  
2
0
-1  
-2  
-3  
-4  
-5  
-10  
-1  
-10  
-10  
V
(V)  
I (mA)  
C
CE  
Tamb = 25 °C  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
Fig. 12. PNP transistor: Collector current as a function  
of collector-emitter voltage; typical values  
Fig. 13. PNP transistor: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
006aac826  
006aac827  
-10  
-10  
V
I(on)  
(V)  
V
I(off)  
(V)  
(1)  
(1)  
-1  
-1  
(2)  
(2)  
(3)  
(3)  
-1  
-1  
-10  
-10  
-1  
2
-1  
-10  
-1  
-10  
-10  
-10  
-1  
-10  
I
(mA)  
I (mA)  
C
C
VCE = -0.3 V  
VCE = -5 V  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 14. PNP transistor: On-state input voltage as a  
function of collector current; typical values  
Fig. 15. PNP transistor: Off-state input voltage as a  
function of collector current; typical values  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
9 / 17  
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
006aac828  
006aac763  
3
8
10  
C
c
(pF)  
f
T
6
4
2
0
(MHz)  
2
10  
10  
-1  
-10  
2
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
-1  
-10  
-10  
I (mA)  
C
CB  
f = 1 MHz; Tamb = 25 °C  
VCE = -5 V; Tamb = 25 °C  
Fig. 16. PNP transistor: Collector capacitance as a  
function of collector-base voltage; typical  
values  
Fig. 17. PNP transistor: Transition frequency as a  
function of collector current; typical values of  
built-in transistor  
11. Test information  
11.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
11.2 Resistor calculation  
Calculation of bias resistor 1 (R1)  
Calculation of bias resistor ratio (R2/R1)  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
10 / 17  
 
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
n.c.  
I
I
; I  
I1 I2  
R1  
; I  
I3 I4  
R2  
GND  
aaa-020082  
Fig. 18. NPN transistor: Resistor test circuit  
n.c.  
I
I
; I  
I1 I2  
R1  
; I  
I3 I4  
R2  
GND  
aaa-020083  
Fig. 19. PNP transistor: Resistor test circuit  
11.3 Resistor test conditions  
Table 8.  
Resistor test conditions  
Per transistor; for the PNP transistor with negative polarity  
R1 (kΩ)  
R2 (kΩ)  
Test conditions  
II1  
II2  
140 μA  
II3  
II4  
4.7  
47  
90 μA  
-55 μA  
-105 μA  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
11 / 17  
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
12. Package outline  
0.35  
0.35  
0.15  
0.23  
1
6
2
5
3
4
0.125  
0.205  
0.22  
0.30  
0.95  
1.05  
0.32  
0.40  
0.04  
max  
0.34  
0.40  
0.275 0.275  
1.05  
1.15  
Dimensions in mm  
13-03-05  
Fig. 20. Package outline DFN1010B-6 (SOT1216)  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
12 / 17  
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
13. Soldering  
Footprint information for reflow soldering of DFN1010B-6 package  
SOT1216  
0.9  
0.35  
0.35  
0.15 0.2 (6x) 0.15  
0.25  
0.35  
1.3 1.2 0.5  
0.35  
0.6 1.1  
0.25  
0.3 (6x)  
1
1.35  
solder land  
solder land plus solder paste  
occupied area  
solder resist  
Dimensions in mm  
13-03-06  
Issue date  
sot1216_fr  
14-07-28  
Fig. 21. Reflow soldering footprint for DFN1010B-6 (SOT1216)  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
13 / 17  
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
14. Revision history  
Table 9.  
Revision history  
Data sheet ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PQMD13 v.1  
20151104  
Product data sheet  
-
-
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
14 / 17  
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
15. Legal information  
15.1 Data sheet status  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Right to make changes — Nexperia reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Suitability for use in automotive applications — This Nexperia  
product has been qualified for use in automotive  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia and its suppliers accept no liability for  
inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nexperia.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
15.2 Definitions  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Customers are responsible for the design and operation of their  
applications and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the Nexperia product is suitable and fit for the  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
customer’s applications and products planned, as well as for the planned  
application and use of customer’s third party customer(s). Customers should  
provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local Nexperia  
sales office. In case of any inconsistency or conflict with the  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using Nexperia  
products in order to avoid a default of the applications  
short data sheet, the full data sheet shall prevail.  
and the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
15.3 Disclaimers  
Terms and conditions of commercial sale — Nexperia  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no  
responsibility for the content in this document if provided by an information  
source outside of Nexperia.  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
15 / 17  
 
 
 
 
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
15.4 Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
16 / 17  
 
Nexperia  
PQMD13  
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ  
16. Contents  
1
2
3
4
5
6
7
8
9
10  
General description ............................................... 1  
Features and benefits ............................................1  
Applications ........................................................... 1  
Quick reference data ............................................. 1  
Pinning information ...............................................2  
Ordering information .............................................2  
Marking ...................................................................3  
Limiting values .......................................................4  
Thermal characteristics .........................................5  
Characteristics .......................................................6  
11  
Test information ...................................................10  
Quality information ............................................. 10  
Resistor calculation ............................................ 10  
Resistor test conditions ...................................... 11  
11.1  
11.2  
11.3  
12  
13  
14  
Package outline ................................................... 12  
Soldering .............................................................. 13  
Revision history ...................................................14  
15  
Legal information .................................................15  
Data sheet status ............................................... 15  
Definitions ...........................................................15  
Disclaimers .........................................................15  
Trademarks ........................................................ 16  
15.1  
15.2  
15.3  
15.4  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 04 November 2015  
©
PQMD13  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 November 2015  
17 / 17  

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