PSMN004-60B [NEXPERIA]

N-channel TrenchMOS SiliconMAX standard level FETProduction;


型号：	PSMN004-60B
厂家：	Nexperia
描述：	N-channel TrenchMOS SiliconMAX standard level FETProduction 开关脉冲晶体管
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PSMN004-60B

N-channel TrenchMOS SiliconMAX standard level FET

Rev. 02 — 15 December 2009

Product data sheet

1. Product profile

1.1 General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Suitable for high frequency

applications due to fast switching

characteristics

on-state resistance

1.3 Applications

High frequency computer motherboard

OR-ing applicationss

DC-to-DC convertors

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1 and 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

230

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 75 A;

V_DS= 48 V; T_j= 25 °C;

see Figure 11

Static characteristics

R_DSon

drain-source

V_GS= 10 V; I_D= 25 A;

3.1

3.6

mΩ

on-state resistance

T_j= 25 °C; see Figure 9 and 10

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

[1]

drain

source

mounting base; connected to

drain

mbb076

SOT404 (D2PAK)

[1] It is not possible to make a connection to pin 2.

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN004-60B

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads (one

lead cropped)

SOT404

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

2 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_j≥ 25 °C; T_j≤ 175 °C; R_GS= 20 kΩ

V_DGR

V_GS

-20

I_D

V_GS= 10 V; T_mb= 100 °C; see Figure 1

V_GS= 10 V; T_mb= 25 °C; see Figure 1 and 3

t_p≤ 10 µs; pulsed; T_mb= 25 °C; see Figure 3

T_mb= 25 °C; see Figure 2

I_DM

P_tot

T_stg

T_j

peak drain current

400

230

175

total power dissipation

storage temperature

junction temperature

peak gate-source voltage

°C

-55

-30

V_GSM

pulsed; t_p≤ 50 µs; δ = 25 %; T_j≤ 150 °C

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

I_SM

t_p≤ 10 µs; pulsed; T_mb= 25 °C

400

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

V_GS= 10 V; T_j(init)= 25 °C; I_D= 75 A;

V_sup= 15 V; unclamped; t_p= 0.1 ms; R_GS= 50 Ω

500

avalanche energy

I_DS(AL)S

non-repetitive drain-source

avalanche current

V_GS= 10 V; V_sup= 15 V; R_GS= 50 Ω;

T_j(init)= 25 °C; unclamped

03aa16

03ah79

120

der

(%)

der

100

120

150

180

(°C)

100

150

200

(°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

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PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

03ah81

Limit R

= V /I

DS D

DSon

(A)

= 10 µs

100 µs

1 ms

10 ms

100 ms

(V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

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PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting base

see Figure 4

0.65

K/W

R_th(j-a)

thermal resistance from

junction to ambient

mounted on a printed circuit board;

minimum footprint

K/W

03af48

δ = 0.5

th(j-mb)

(K/W)

0.2

−1

0.1

0.05

0.02

−2

−3

δ =

single pulse

−6

−5

−4

−3

−2

−1

(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

5 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= -55 °C; see Figure 8

voltage

4.4

I_D= 1 mA; V_DS= V_GS; T_j= 175 °C; see Figure 8

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C; see Figure 8

I_DSS

drain leakage current

gate leakage current

V_DS= 30 V; V_GS= 0 V; T_j= 175 °C

V_DS= 30 V; V_GS= 0 V; T_j= 25 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

500

µA

mΩ

0.02

6.5

I_GSS

100

7.55

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

see Figure 9 and 10

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 9 and 10

3.1

3.6

mΩ

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

I_D= 75 A; V_DS= 48 V; V_GS= 10 V; T_j= 25 °C;

see Figure 11

168

V_DS= 25 V; V_GS= 0 V; f = 1 MHz; T_j= 25 °C;

see Figure 12

8300

1050

550

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 15 V; R_L= 1.25 Ω; V_GS= 10 V;

R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

133

Source-drain diode

V_SD

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C; see Figure 13

0.8

1.2

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

6 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

03ah82

03ah84

300

100

7.5 V

8 V

10 V

7 V

6.5 V

T = 25 °C

> I x R

(A)

DSon

(A)

6 V

20V

200

T = 175 °C

5.5 V

5 V

100

25 °C

= 4.5 V

0.4

0.8

1.2

1.6

(V)

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

03aa35

03aa32

−1

GS(th)

(V)

(A)

min

typ

max

−2

−3

−4

−5

−6

max

typ

min

−60

120

180

(V)

T (°C)

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Fig 8. Gate-source threshold voltage as a function of

junction temperature

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

7 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

03aa28

03ah83

2.4

0.015

DSon

T = 25 °C

(W)

5 V

5.5 V

1.8

0.01

6 V

1.2

0.6

6.5 V

0.005

= 20 V

10 V

100

8 V

7 V

200

300

−60

120

180

(A)

T (°C)

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values

Fig 10. Normalized drain-source on-state resistance

factor as a function of junction temperature

03ah88

03ah87

= 75 A

(V)

(pF)

= 48 V

iss

T = 25 °C

oss

rss

−1

100

150

200

(nC)

(V)

Fig 11. Gate-source voltage as a function of gate

charge; typical values

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

8 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

03ah86

100

= 0 V

(A)

175 °C

T = 25 °C

0.0

0.5

1.0

1.5

(V)

Fig 13. Source current as a function of source-drain voltage; typical values

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

9 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

7. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

mounting

base

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

4.50

4.10

1.40

1.27

0.85

0.60

0.64

0.46

1.60

1.20

10.30

9.70

2.90 15.80 2.60

2.10 14.80 2.20

2.54

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-02-11

06-03-16

SOT404

Fig 14. Package outline SOT404 (D2PAK)

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

10 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

8. Revision history

Table 7.

Revision history

Document ID

PSMN004-60B_2

Modifications:

Release date

Data sheet status

Change notice

Supersedes

20091215

Product data sheet

PSMN004_60P_60B-01

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number PSMN004-60B separated from data sheet PSMN004_60P_60B-01.

PSMN004_60P_60B-01

(9397 750 09156)

20020426

Product data

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

11 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

9. Legal information

9.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Applications— Applications that are described herein for any of these

9.2 Definitions

Draft— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Limiting values— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet— A short data sheet is an extract from a full data sheet with

the same product type number(s) and title. A short data sheet is intended for

quick reference only and should not be relied upon to contain detailed and full

information. For detailed and full information see the relevant full data sheet,

which is available on request via the local Nexperia sales office.

In case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Terms and conditions of sale— Nexperia products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nexperia.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by Nexperia. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

9.3 Disclaimers

General— Information in this document is believed to be accurate and

reliable. However, Nexperia does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license— Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes— Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control— This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Suitability for use— Nexperia products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

therefore such inclusion and/or use is at the customer’s own risk.

10. Contact information

For more information, please visit:http://www.nexperia.com

For sales office addresses, please send an email to:salesaddresses@nexperia.com

PSMN004-60B_2

Product data sheet

Rev. 02 — 15 December 2009

12 of 13

PSMN004-60B

Nexperia

N-channel TrenchMOS SiliconMAX standard level FET

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .5

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 15 December 2009

PSMN004-60B [NEXPERIA]

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