PSMN013-100PS [NEXPERIA]

N-channel 100V 13.9mΩ standard level MOSFET in TO220.Production;


型号：	PSMN013-100PS
厂家：	Nexperia
描述：	N-channel 100V 13.9mΩ standard level MOSFET in TO220.Production 局域网开关脉冲晶体管
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PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

10 August 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

High efficiency due to low switching and conduction losses

Improved dynamic avalanche performance

Suitable for standard level gate drive

•

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

•

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 1

[1]

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 2

junction temperature

170

175

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 100 °C;

Fig. 12

19.4

10.8

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 13

[2]

13.9

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; V_DS= 50 V;

Fig. 15; Fig. 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Q_G(tot)

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 50 V;

Fig. 14; Fig. 15

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

V_GS= 10 V; T_j(init)= 25 °C; I_D= 68 A;

V_sup≤ 100 V; unclamped; R_GS= 50 Ω

128

source avalanche

energy

[1] Continuous current is limited by package

[2] Measured 3 mm from package.

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

drain

source

mbb076

mounting base; connected to

drain

2 3

TO-220AB (SOT78)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN013-100PS

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

4. Marking

Table 4.

Marking codes

Type number

Marking code

PSMN013-100PS

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Product data sheet

10 August 2012

2 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

100

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_j≤ 175 °C; T_j≥ 25 °C; R_GS= 20 kΩ

V_DGR

V_GS

-20

I_D

V_GS= 10 V; T_mb= 100 °C; Fig. 1

V_GS= 10 V; T_mb= 25 °C; Fig. 1

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

T_mb= 25 °C; Fig. 2

[1]

I_DM

peak drain current

272

170

175

260

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

peak soldering temperature

°C

-55

T_sld(M)

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

[1]

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

272

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 68 A;

V_sup≤ 100 V; unclamped; R_GS= 50 Ω

128

[1] Continuous current is limited by package

PSMN013-100PS

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Product data sheet

10 August 2012

3 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

003aac512

03aa16

120

I_D

(A)

der

(%)

100

150

200

100

150

200

T_mb(°C)

(°C)

Fig. 1. Continuous drain current as a function of

mounting base temperature

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

003aae168

10³

(A)

Limit R

= V / I

DS D

DSon

10²

=10 µs

100 µs

1 ms

10 ms

100 ms

- 1

(V)

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

6. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

0.9

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

Fig. 4

0.5

K/W

PSMN013-100PS

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Product data sheet

10 August 2012

4 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance

from junction to

ambient

vertical in free air

K/W

003aad575

Z_{th (j-mb)}

= 0.5

(K/W)

10^-1

0.2

0.1

0.05

10^-20.02

t_p

δ =

10^-3

single shot

t_p

10^-4

1e-6

10^-5

10^-4

10^-3

10^-2

10^-1

t_p(s)

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical

values

7. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

100

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

voltage

Fig. 10

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

Fig. 10; Fig. 11

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

Fig. 10

4.6

I_DSS

drain leakage current

gate leakage current

V_DS= 100 V; V_GS= 0 V; T_j= 125 °C

V_DS= 100 V; V_GS= 0 V; T_j= 25 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

100

µA

mΩ

0.06

I_GSS

100

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 100 °C;

Fig. 12

19.4

PSMN013-100PS

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Product data sheet

10 August 2012

5 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_GS= 10 V; I_D= 15 A; T_j= 175 °C;

Fig. 12

29.5

38.9

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 13

[1]

10.8

13.9

mΩ

R_G

internal gate

f = 1 MHz

resistance (AC)

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

47.6

13.8

Q_GS

gate-source charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

Q_GS(th)

Q_GS(th-pl)

Q_GD

pre-threshold gate-

source charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 15

9.2

4.6

post-threshold gate-

source charge

gate-drain charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 15; Fig. 14

V_GS(pl)

gate-source plateau

voltage

V_DS= 50 V; Fig. 15; Fig. 14

4.4

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 50 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 16

3195

221

reverse transfer

capacitance

136

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 50 V; R_L= 2 Ω; V_GS= 10 V;

R_G(ext)= 4.7 Ω; T_j= 25 °C

20.7

turn-off delay time

fall time

52.5

Source-drain diode

V_SDsource-drain voltage

t_rr

I_S= 15 A; V_GS= 0 V; T_j= 25 °C; Fig. 17

0.85

1.2

reverse recovery time I_S= 25 A; dI_S/dt = 100 A/µs; V_GS= 0 V;

V_DS= 50 V

Q_r

recovered charge

109

[1] Measured 3 mm from package.

PSMN013-100PS

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Product data sheet

10 August 2012

6 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

003aad577

003aad580

200

I_D

5000

C_iss

(pF)

(A)

160

120

4000

5.5

3000

C_rss

2000

1000

4.5

V_GS(V) = 4

V_GS(V)

V_DS(V)

Fig. 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig. 6. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

003aad585

003aad586

150

g_fs

R_DSon

(S)

120

)

120

I_D(A)

150

V_GS(V)

Fig. 7. Drain-source on-state resistance as a function Fig. 8. Forward transconductance as a function of

of gate-source voltage; typical values drain current; typical values

PSMN013-100PS

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Product data sheet

10 August 2012

7 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

003aad582

003aad280

100

I_D

GS(th)

(V)

(A)

max

typ

T = 175 C

min

25 C

- 60

120

180

V_GS(V)

T (°C)

Fig. 10. Gate-source threshold voltage as a function of

junction temperature

Fig. 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

03aa35

003aad774

- 1

3.2

(A)

min

typ

max

- 2

- 3

- 4

- 5

- 6

2.4

1.6

0.8

-60

120

180

T (°C)

(V)

Fig. 11. Sub-threshold drain current as a function of

gate-source voltage

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

PSMN013-100PS

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Product data sheet

10 August 2012

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Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

003aad583

003aad578

V_GS

(V)

DSon

(mΩ)

(V) = 4.5

V_DS= 50V

(A)

Q_G(nC)

Fig. 13. Drain-source on-state resistance as a function

of drain current; typical values

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

003aad581

iss

(pF)

GS(pl)

oss

rss

GS(th)

GS1

GS2

G(tot)

003aaa508

- 2

- 1

Fig. 15. Gate charge waveform definitions

(V)

Fig. 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMN013-100PS

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Product data sheet

10 August 2012

9 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

003aad584

100

I_S

(A)

T = 175 C

25 C

0.3

0.6

0.9

1.2

V_SD(V)

Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

PSMN013-100PS

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Product data sheet

10 August 2012

10 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

8. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

mounting

base

(1)

(2)

(3×)

(2)

(2×)

b(3×)

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

(2)

(1)

UNIT

max.

4.7

4.1

1.40

1.25

0.9

0.6

1.6

1.0

1.3

1.0

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0 3.30

12.8 2.79

3.8

3.5

3.0

2.7

2.6

2.2

2.54

3.0

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

JEITA

08-04-23

08-06-13

SOT78

SC-46

3-lead TO-220AB

Fig. 18. TO-220AB (SOT78)

PSMN013-100PS

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Product data sheet

10 August 2012

11 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

9. Legal information

9.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Right to make changes — Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use — Nexperia products are not designed,

Product

[short] data

sheet

Production

This document contains the product

specification.

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the Nexperia product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Nexperia does not accept any liability related to any default,

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

9.3 Disclaimers

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

PSMN013-100PS

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Product data sheet

10 August 2012

12 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

Nexperia accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

9.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

PSMN013-100PS

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Product data sheet

10 August 2012

13 / 14

Nexperia

PSMN013-100PS

N-channel 100V 13.9mΩ standard level MOSFET in TO220.

10. Contents

Product profile ....................................................... 1

General description .............................................. 1

1.1

1.2

1.3

1.4

Features and benefits ...........................................1

Applications ..........................................................1

Quick reference data ............................................ 1

Pinning information ...............................................2

Ordering information .............................................2

Marking ...................................................................2

Limiting values .......................................................3

Thermal characteristics .........................................4

Characteristics .......................................................5

Package outline ................................................... 11

Legal information .................................................12

Data sheet status ............................................... 12

Definitions ...........................................................12

Disclaimers .........................................................12

Trademarks ........................................................ 13

9.1

9.2

9.3

9.4

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 10 August 2012

PSMN013-100PS

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Product data sheet

10 August 2012

14 / 14

PSMN013-100PS [NEXPERIA]

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