PSMN3R9-100YSF [NEXPERIA]

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E packageProduction;


型号：	PSMN3R9-100YSF
厂家：	Nexperia
描述：	NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E packageProduction
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中文：	中文翻译
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PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in

LFPAK56E package

11 June 2021

Product data sheet

1. General description

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for

industrial and consumer applications.

2. Features and benefits

•

Low Q_rrfor higher efficiency and lower spiking

•

120 A I_D(max) – demonstrated continuous current rating

Low Q_G× R_DSonFOM for high efficiency switching applications

Strong avalanche energy rating (E_as)

Avalanche rated and 100% tested

Ha-free and RoHS compliant LFPAK56E package

3. Applications

•

Synchronous rectifier in AC-DC and DC-DC

Primary side switch – 48 V DC-DC

BLDC motor control

USB-PD adapters

Full-bridge and half-bridge applications

Flyback and resonant topologies

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

120

294

175

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

3.3

5.1

4.3

6.9

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

Fig. 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

Q_G(tot)

120

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 52.6 A; V_sup≤ 100 V; R_GS= 50 Ω; [1]

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 95 µs; Fig. 4

325

source avalanche

energy

Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

Q_r

recovered charge

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 50 V; Fig. 18

[1] Protected by 100% test

5. Pinning information

Table 2. Pinning information

Symbol

Description

source

gate

Simplified outline

Graphic symbol

mounting base; connected

to drain

mbb076

LFPAK56E; Power-

SO8 (SOT1023)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PSMN3R9-100YSF

LFPAK56E;

Power-SO8

plastic, single-ended surface-mounted package

(LFPAK56); 4 leads; 1.27 mm pitch

SOT1023

7. Marking

Table 4. Marking codes

Type number

Marking code

3F9S10J

PSMN3R9-100YSF

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

total power dissipation

drain current

25 °C ≤ T_j≤ 175 °C

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

100

V_DGR

V_GS

-20

P_tot

T_mb= 25 °C; Fig. 1

294

120

690

175

I_D

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

I_DM

peak drain current

T_stg

storage temperature

-55

°C

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

Symbol

T_j

Parameter

Conditions

Min

-55

Max

175

260

Unit

°C

junction temperature

T_sld(M)

peak soldering

temperature

°C

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

120

690

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-

I_D= 52.6 A; V_sup≤ 100 V; R_GS= 50 Ω;

source avalanche energy V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 95 µs; Fig. 4

[1]

325

I_AS

non-repetitive avalanche V_sup= 100 V; V_GS= 10 V; T_j(init)= 25 °C;

52.6

current

R_GS= 50 Ω; Fig. 4

[1] Protected by 100% test

120

03aa16

aaa-029645

200

150

100

(A)

der

(%)

(1)

100

150

200

(°C)

75 100 125 150 175 200

(°C)

V_GS≥ 10 V

(1) 120A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

PSMN3R9-100YSF

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Product data sheet

11 June 2021

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

aaa-029648

Limit R

= V / I

DS D

DSon

(A)

= 10 µs

100 µs

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

aaa-029644

(A)

(1)

(2)

(3)

-1

-3

-2

-1

(ms)

(1) T_{j (init)}= 25 °C; (2) T_{j (init)}= 150 °C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance from Fig. 5

junction to mounting

base

0.45

0.51

K/W

R_th(j-a)

thermal resistance from Fig. 6

K/W

junction to ambient

Fig. 7

PSMN3R9-100YSF

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Product data sheet

11 June 2021

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

aaa-029647

th(j-mb)

(K/W)

δ = 0.5

-1

-2

-3

0.2

0.1

0.05

0.02

single shot

δ =

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

aaa-027933

aaa-027935

Copper square 25.4 mm x 25.4 mm; 70 µm thick on

FR4 board

70 µm thick copper on FR4 board

Fig. 7. PCB layout with minimum footprint for thermal

resistance from junction to ambient

Fig. 6. PCB layout for resistance from junction to

ambient

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

100

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C; Fig. 11

voltage

I_D= 1 mA; V_DS=V_GS; T_j= 175 °C

1.65

3.5

-8.4

I_D= 1 mA; V_DS=V_GS; T_j= -55 °C

ΔV_GS(th)/ΔT

gate-source threshold 25 °C ≤ T_j≤ 150 °C

voltage variation with

mV/K

temperature

I_DSS

drain leakage current

gate leakage current

V_DS= 100 V; V_GS= 0 V; T_j= 25 °C

V_DS= 100 V; V_GS= 0 V; T_j= 125 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

0.03

µA

100

I_GSS

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 12

3.3

4.3

mΩ

V_GS= 7 V; I_D= 25 A; T_j= 25 °C; Fig. 12

3.9

5.1

6.1

6.9

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

Fig. 13

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

Fig. 13

7.3

9.9

1.7

mΩ

R_G

gate resistance

f = 1 MHz; T_j= 25 °C

0.4

0.83

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

120

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

Q_GS

gate-source charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

Fig. 14; Fig. 15

23.6

15.3

Q_GS(th)

pre-threshold gate-

source charge

Q_GS(th-pl)

post-threshold gate-

source charge

8.3

Q_GD

gate-drain charge

V_GS(pl)

gate-source plateau

voltage

I_D= 25 A; V_DS= 50 V; Fig. 14; Fig. 15

4.5

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 50 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 16

3300 5520 7730 pF

800

1335 2140 pF

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 50 V; R_L= 2 Ω; V_GS= 10 V;

R_G(ext)= 5 Ω

turn-off delay time

fall time

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C; Fig. 17

0.82

reverse recovery time I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 50 V; Fig. 18

Q_r

recovered charge

PSMN3R9-100YSF

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Product data sheet

11 June 2021

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

aaa-029649

aaa-029650

300

DSon

10 V

7 V

(A)

(mΩ)

250

200

150

100

6 V

= 5.5 V

5 V

4.5 V

V (V)

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 25 A

Fig. 8. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-029651

aaa-011501

-1

300

(A)

250

200

150

100

-2

-3

-4

-5

-6

175°C

T = 25°C

(V)

V_DS= 8 V

T_j= 25 °C; V_DS= 5 V

Fig. 10. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 11. Sub-threshold drain current as a function of

gate-source voltage

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

aaa-029652

aaa-029656

2.5

5 V

5.5 V

(mΩ)

DSon

6 V

1.5

7 V

0.5

= 10 V

120

160

(A)

200

-60 -30

90 120 150 180

T (°C)

T_j= 25 °C

Fig. 12. Drain-source on-state resistance as a function

of drain current; typical values

Fig. 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

aaa-029653

(V)

= 20 V

GS(pl)

GS(th)

80 V

50 V

GS2

GS1

(nC)

100

G(tot)

003aaa508

T_j= 25 °C; I_D= 25 A

Fig. 15. Gate charge waveform definitions

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

aaa-029654

aaa-029655

300

250

200

150

100

(A)

iss

(pF)

oss

175°C

T = 25°C

rss

-1

0.2

0.4

0.6

0.8

(V)

1.2

(V)

V_GS= 0 V; f = 1 MHz

V_GS= 0 V

Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a

as a function of drain-source voltage; typical

values

function of source-drain (diode forward)

voltage; typical values

003aal160

(A)

0.25 I

t (s)

Fig. 18. Reverse recovery timing definition

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

11. Package outline

Plastic single-ended surface-mounted package (LFPAK56E); 4 leads

SOT1023

(3x)

mounting

base

detail X

2.5

5 mm

scale

Dimensions

Unit

(1)

max 1.10 0.15 0.50 4.41

nom

min 0.95 0.00 0.35 3.62

0.25 0.30 4.70 4.45 5.30 3.7

6.2 1.3 0.85

5.9 0.8 0.40

0.85

1.27

0.25 0.1

0.19 0.24 4.45

4.95 3.5

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1023_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

13-03-05

17-07-31

SOT1023

Fig. 19. Package outline LFPAK56E; Power-SO8 (SOT1023)

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

12. Soldering

4.7

4.2

0.9

0.6

(3×)

(4×)

0.25

(2×)

0.25

(2×)

3.5

3.45

0.6

(3×)

2.55

0.25

(2×)

SR opening =

Cu + 0.075

1.1

2.15

3.3

SP opening =

Cu - 0.050

0.7

(4×)

1.27

3.81

solder paste

125 µm stencil

solder lands

solder resist

occupied area

sot1023_fr

Fig. 20. Reflow soldering footprint for LFPAK56E; Power-SO8 (SOT1023)

PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

13. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

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the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

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Characteristics sections of this document is not warranted. Constant or

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PSMN3R9-100YSF

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Product data sheet

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Nexperia

PSMN3R9-100YSF

NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 4

10. Characteristics............................................................5

11. Package outline........................................................ 10

12. Soldering................................................................... 11

13. Legal information......................................................12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 11 June 2021

PSMN3R9-100YSF

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Product data sheet

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PSMN3R9-100YSF [NEXPERIA]

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