PSMN4R3-40MSH [NEXPERIA]

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technologyProduction;


型号：	PSMN4R3-40MSH
厂家：	Nexperia
描述：	N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technologyProduction
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PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33

using NextPower-S3 technology

27 April 2020

Product data sheet

1. General description

95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using

advanced TrenchMOS Superjunction technology. This product has been designed and qualified for

high efficiency applications at high switching frequencies.

2. Features and benefits

•

Avalanche rated, 100% tested

•

NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

Low Q_RR, Q_Gand Q_GDfor high system efficiency, especially at high switching frequencies

Low spiking and ringing for low EMI designs

High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire

bonds, qualified to 175 °C

•

Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

Low parasitic inductance and resistance

3. Applications

•

Secondary side synchronous rectification

DC-to-DC converters

Brushless DC motor drive

LED lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

3.5

4.3

mΩ

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 20 V; V_GS= 10 V;

Fig. 12; Fig. 13

1.1

3.6

7.3

Q_G(tot)

[1] 95A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

5. Pinning information

Table 2. Pinning information

Symbol

Description

source

gate

Simplified outline

Graphic symbol

mbb076

Mounting base; connected

to drain

LFPAK33 (SOT1210)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PSMN4R3-40MSH

LFPAK33

Plastic, single ended surface mounted package (LFPAK33); 8

leads; 0.65 mm pitch

SOT1210

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN4R3-40MSH

4H3S40

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

25 °C ≤ T_j≤ 175 °C

V_DSM

peak drain-source

voltage

t_p≤ 20 ns; f ≤ 500 kHz; E_DS(AL)≤ 200 nJ;

pulsed

V_DGR

V_GS

P_tot

I_D

drain-gate voltage

gate-source voltage

total power dissipation

drain current

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

-20

T_mb= 25 °C; Fig. 1

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

[1]

I_DM

peak drain current

storage temperature

junction temperature

392

175

260

T_stg

T_j

-55

°C

T_sld(M)

peak soldering

temperature

Source-drain diode

I_S

source current

T_mb= 25 °C

PSMN4R3-40MSH

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Product data sheet

27 April 2020

2 / 12

Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Symbol

Parameter

Conditions

Min

Max

Unit

I_SM

peak source current

pulsed; t_p≤ 10 µs; T_mb= 25 °C

392

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-

I_D= 32.6 A; V_sup≤ 40 V; R_GS= 50 Ω;

source avalanche energy V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 117 µs

[2]

I_D= 25 A; V_sup≤ 40 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 204 µs

132

I_AS

non-repetitive avalanche V_sup≤ 40 V; V_GS= 10 V; T_j(init)= 25 °C;

current

R_GS= 50 Ω

[1] 95A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

[2] Protected by 100% test

03aa16

aaa-029734

120

100

(1)

(A)

der

(%)

100

150

200

75 100 125 150 175 200

(°C)

V_GS≥ 10 V

(1) 95A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

PSMN4R3-40MSH

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Product data sheet

27 April 2020

3 / 12

Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

aaa-031176

(A)

Limit R

= V / I

DS D

DSon

= 10 µs

100 µs

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance from Fig. 4

junction to mounting

base

1.48

1.67

K/W

R_th(j-a)

thermal resistance from Fig. 5

K/W

junction to ambient

Fig. 6

130

aaa-029737

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

-1

δ =

0.05

0.02

single shot

-2

-6

-5

-4

-3

-2

-1

(s)

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN4R3-40MSH

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Product data sheet

27 April 2020

4 / 12

Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

aaa-028025

aaa-028026

70 µm thick copper on FR4 board

Copper area 25.4 mm x 25.4 mm; 70 µm thick on

FR4 board

Fig. 6. PCB layout with minimum footprint for thermal

resistance from junction to ambient

Fig. 5. PCB layout for thermal resistance from junction

to ambient

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

2.4

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

voltage

3.6

ΔV_GS(th)/ΔT

gate-source threshold 25 °C ≤ T_j≤ 150 °C

voltage variation with

-5.9

mV/K

temperature

I_DSS

drain leakage current

gate leakage current

V_DS= 32 V; V_GS= 0 V; T_j= 25 °C

V_DS= 32 V; V_GS= 0 V; T_j= 125 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

0.01

µA

mΩ

I_GSS

100

4.3

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

3.5

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

Fig. 11

9.4

mΩ

R_G

gate resistance

f = 1 MHz; T_j= 25 °C

0.3

0.8

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 20 V; V_GS= 10 V;

Fig. 12; Fig. 13

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

12.3

7.3

Q_GS

gate-source charge

I_D= 25 A; V_DS= 20 V; V_GS= 10 V;

Fig. 12; Fig. 13

4.4

2.8

Q_GS(th)

pre-threshold gate-

source charge

4.7

Q_GS(th-pl)

post-threshold gate-

source charge

1.5

2.6

3.8

Q_GD

gate-drain charge

1.1

3.6

4.5

7.3

V_GS(pl)

gate-source plateau

voltage

I_D= 25 A; V_DS= 20 V; Fig. 12; Fig. 13

PSMN4R3-40MSH

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Product data sheet

27 April 2020

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Symbol

C_iss

Parameter

Conditions

Min

Typ

Max

Unit

input capacitance

output capacitance

V_DS= 25 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 14

1086 1670 2338 pF

C_oss

363

559

782

182

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 20 V; R_L= 0.8 Ω; V_GS= 10 V;

R_G(ext)= 5 Ω

6.5

4.5

turn-off delay time

fall time

12.4

4.4

Q_oss

output charge

V_GS= 0 V; V_DS= 20 V; f = 1 MHz;

T_j= 25 °C

17.2

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C; Fig. 15

0.83

reverse recovery time I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; Fig. 16

Q_r

t_a

recovered charge

[1]

reverse recovery rise

time

t_b

reverse recovery fall

time

[1] includes capacitive recovery

aaa-029738

aaa-029739

120

(mΩ)

DSon

5.5 V

(A)

100

10 V

6 V

=5 V

4.5 V

4 V

V (V)

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 25 A

Fig. 7. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 8. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PSMN4R3-40MSH

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Product data sheet

27 April 2020

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

aaa-031178

aaa-029741

120

(mΩ)

DSon

4.5 V

5 V

5.5 V

(A)

100

6 V

175°C

25°C

= 10 V

100

(A)

120

(V)

V_DS= 8 V

T_j= 25 °C

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 10. Drain-source on-state resistance as a function

of drain current; typical values

aaa-026897

aaa-031177

2.4

(V)

1.6

1.2

0.8

0.4

32 V

20 V

= 8 V

-60 -30

90 120 150 180

T (°C)

(nC)

T_j= 25 °C; I_D= 25 A

Fig. 12. Gate-source voltage as a function of gate

charge; typical values

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

PSMN4R3-40MSH

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Product data sheet

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

aaa-029742

(pF)

iss

GS(pl)

oss

GS(th)

GS2

rss

GS1

G(tot)

003aaa508

Fig. 13. Gate charge waveform definitions

-1

(V)

V_GS= 0 V; f = 1 MHz

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aal160

aaa-031179

(A)

0.25 I

175°C

0.4

T = 25°C

t (s)

0.2

0.6

0.8

(V)

1.2

Fig. 16. Reverse recovery timing definition

V_GS= 0 V

Fig. 15. Source-drain (diode forward) current as a

function of source-drain (diode forward)

voltage; typical values

PSMN4R3-40MSH

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Product data sheet

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

11. Package outline

Plastic single ended surface mounted package (LFPAK33); 8 leads

SOT1210

mounting

base

(D)

detail X

2.5

5 mm

scale

Dimensions

(1)

Unit

D ref

2.60

max 0.90 0.10 0.35 2.4 0.20 0.30

nom

2.35

1.90

3.40 2.45

3.20 2.00

3.40 0.65 0.25 0.50

3.20 0.45 0.13 0.30

0.50

0.65 0.65

0.20 0.10

0.80 0.00 0.25 2.2 0.10 0.20

min

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1210_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

14-04-25

16-08-09

SOT1210

Fig. 17. Package outline LFPAK33 (SOT1210)

PSMN4R3-40MSH

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Product data sheet

27 April 2020

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

12. Soldering

Footprint information for reflow soldering of LFPAK33 package

SOT1210

2.35

2.25

0.635 0.617

0.05 (all around)

1.05

0.62

0.75

1.91

0.51

2.47

3.9

0.51

0.6

0.83

0.4 (x8)

0.3 (x8)

0.65 (x6)

0.25 (x6)

solder paste

aperture

solder land

Notes : 1. Dimensions in mm

occupied area

solder resist

sot1210_fr

Fig. 18. Reflow soldering footprint for LFPAK33 (SOT1210)

PSMN4R3-40MSH

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Product data sheet

27 April 2020

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

equipment, nor in applications where failure or malfunction of an Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia and its suppliers accept

no liability for inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

13. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

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Definition

[1][2]

status [3]

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

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and products using Nexperia products, and Nexperia accepts no liability for

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Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

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the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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PSMN4R3-40MSH

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Product data sheet

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Nexperia

PSMN4R3-40MSH

N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 4

10. Characteristics............................................................5

11. Package outline.......................................................... 9

12. Soldering................................................................... 10

13. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 27 April 2020

PSMN4R3-40MSH

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Product data sheet

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PSMN4R3-40MSH [NEXPERIA]

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