PSMN5R3-25MLD [NEXPERIA]

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 TechnologyProduction;


型号：	PSMN5R3-25MLD
厂家：	Nexperia
描述：	N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 TechnologyProduction
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PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33

using NextPowerS3 Technology

6 April 2016

Product data sheet

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers

high efficiency, low spiking performance usually associated with MOSFETS with an

integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching

frequencies.

2. Features and benefits

Ultra low Q_G, Q_GDand Q_OSSfor high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at

25 °C

•

Optimised for 4.5 V gate drive

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,

no wire bonds, qualified to 175 °C

•

Exposed leads for optimal visual solder inspection

•

3. Applications

On-board DC:DC solutions for server and telecommunications

Secondary-side synchronous rectification in telecommunication applications

Voltage regulator modules (VRM)

Point-of-Load (POL) modules

Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

Brushed and brushless motor control

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

T_j

junction temperature

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

7.07

5.25

8.49

5.9

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

Dynamic characteristics

Q_G(tot)total gate charge

I_D= 15 A; V_DS= 12 V; V_GS= 10 V;

Fig. 12; Fig. 13

12.7

5.9

I_D= 15 A; V_DS= 12 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

6.6

1.3

Q_GD

gate-drain charge

I_D= 15 A; V_DS= 12 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

Source-drain diode

softness factor

I_S= 15 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 12 V; Fig. 16

0.7

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mbb076

mounting base; connected to

drain

LFPAK33 (SOT1210)

6. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN5R3-25MLD

LFPAK33

Plastic single ended surface mounted package

(LFPAK33); 8 leads

SOT1210

PSMN5R3-25MLD

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Product data sheet

6 April 2016

2 / 13

Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

7. Marking

Table 4.

Marking codes

Type number

Marking code

PSMN5R3-25MLD

5D325L

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

total power dissipation

drain current

25 °C ≤ T_j≤ 175 °C

V_DGR

V_GS

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

-20

P_tot

T_mb= 25 °C; Fig. 1

I_D

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

50.3

285

175

260

I_DM

peak drain current

T_stg

T_j

storage temperature

junction temperature

peak soldering temperature

-55

°C

T_sld(M)

V_ESD

Source-drain diode

electrostatic discharge voltage HBM (JEDEC)

300

I_S

source current

peak source current

T_mb= 25 °C

42.4

285

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-source

avalanche energy

I_D= 15 A; V_sup≤ 25 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 315 µs

[1]

76.7

[1] Protected by 100% test

PSMN5R3-25MLD

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Product data sheet

6 April 2016

3 / 13

Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

03aa16

aaa-022675

120

(A)

der

(%)

75 100 125 150 175 200

100

150

200

(°C)

V_GS≥ 10 V

(1) Capped at 70A due to package

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

aaa-022680

(A)

Limit R

= V / I

DS D

DSon

= 10 us

100 us

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

2.95

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

Fig. 4

2.55

K/W

PSMN5R3-25MLD

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Product data sheet

6 April 2016

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

Symbol

Parameter

Conditions

Fig. 5

Min

Typ

Max

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

Fig. 6

178

aaa-022683

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

-1

δ =

0.02

single shot

-2

-6

-5

-4

-3

-2

-1

(s)

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

aaa-008476

aaa-008477

Fig. 5. PCB layout for thermal resistance junction to

ambient 1" square pad; FR4 Board; 2oz copper

Fig. 6. PCB layout for thermal resistance junction to

ambient minimum footprint; FR4 Board; 2oz

copper

10. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

22.5

1.2

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

voltage

1.8

2.2

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ΔV_GS(th)/ΔT

gate-source threshold 25 °C ≤ T_j≤ 175 °C

voltage variation with

-4.3

mV/K

temperature

I_DSS

drain leakage current

gate leakage current

V_DS= 20 V; V_GS= 0 V; T_j= 25 °C

µA

mΩ

V_DS= 20 V; V_GS= 0 V; T_j= 125 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

1.51

I_GSS

100

8.49

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

7.07

V_GS= 4.5 V; I_D= 15 A; T_j= 175 °C;

Fig. 10; Fig. 11

14.43 mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

5.25

5.9

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 175 °C;

Fig. 10; Fig. 11

10.03 mΩ

R_G

gate resistance

f = 1 MHz

0.75

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 15 A; V_DS= 12 V; V_GS= 10 V;

Fig. 12; Fig. 13

12.7

5.9

I_D= 15 A; V_DS= 12 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

6.6

2.7

1.5

Q_GS

gate-source charge

I_D= 15 A; V_DS= 12 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

Q_GS(th)

pre-threshold gate-

source charge

Q_GS(th-pl)

post-threshold gate-

source charge

1.2

Q_GD

gate-drain charge

1.3

V_GS(pl)

gate-source plateau

voltage

I_D= 15 A; V_DS= 12 V; Fig. 12; Fig. 13

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 12 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 14

858

628

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 12 V; R_L= 1 Ω; V_GS= 4.5 V;

R_G(ext)= 5 Ω

8.4

turn-off delay time

fall time

4.9

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Q_oss

output charge

V_GS= 0 V; V_DS= 12 V; f = 1 MHz;

T_j= 25 °C

10.1

Source-drain diode

V_SDsource-drain voltage

t_rr

I_S= 10 A; V_GS= 0 V; T_j= 25 °C; Fig. 15

0.82

19.3

10.8

11.2

1.2

reverse recovery time I_S= 15 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 12 V; Fig. 16

recovered charge

Q_r

t_a

[1]

reverse recovery rise

time

t_b

reverse recovery fall

time

softness factor

0.7

[1] includes capacitive recovery

aaa-022676

aaa-022679

DSon

4.5 V

10 V

(A)

(mΩ)

3.5 V

= 3 V

2.8 V

2.6 V

0.5

1.5

2.5

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 15 A

Fig. 7. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 8. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

aaa-022681

aaa-022678

DSon

(mΩ)

3 V

3.5 V

(A)

4.5 V

175°C

2.4

T = 25°C

= 10 V

0.8

1.6

3.2

I (A)

(V)

V_DS= 12 V

T_j= 25 °C

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 10. Drain-source on-state resistance as a function

of drain current; typical values

aaa-021697

aaa-022677

(V)

10 V

1.6

1.2

0.8

0.4

= 4.5 V

20 V

12 V

= 5 V

-60 -30

90 120 150 180

T (°C)

(nC)

T_j= 25 °C; I_D= 15 A

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig. 12. Gate-source voltage as a function of gate

charge; typical values

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

aaa-022684

(pF)

GS(pl)

iss

oss

GS(th)

GS2

GS1

rss

G(tot)

003aaa508

Fig. 13. Gate charge waveform definitions

-1

(V)

V_GS= 0 V; f = 1 MHz

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aal160

aaa-022682

(A)

0.25 I

175°C

T = 25°C

-1

t (s)

0.2

0.4

0.6

0.8

(V)

1.2

Fig. 16. Reverse recovery timing definition

V_GS= 0 V

Fig. 15. Source-drain (diode forward) current as a

function of source-drain (diode forward)

voltage; typical values

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

11. Package outline

Plastic single ended surface mounted package (LFPAK33); 8 leads

SOT1210

mounting

base

detail X

2.5

5 mm

scale

Dimensions

(1)

Unit

max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35

nom

3.40 2.45

3.20 2.00

3.40 0.25 0.50

3.20 0.13 0.30

0.50

0.65 0.65

0.20 0.10

0.80 0.00 0.25 0.25 0.10 0.20 2.50 1.90

min

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1210_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

12-03-12

14-04-25

SOT1210

Fig. 17. Package outline LFPAK33 (SOT1210)

PSMN5R3-25MLD

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Product data sheet

6 April 2016

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

12. Legal information

12.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

Right to make changes — Nexperia reserves the right to

the objective specification for product

development.

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Product

[short] data

sheet

Production

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the Nexperia product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Nexperia does not accept any liability related to any default,

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

12.3 Disclaimers

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

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Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

Nexperia accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

PSMN5R3-25MLD

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Product data sheet

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Nexperia

PSMN5R3-25MLD

N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

13. Contents

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Pinning information ...............................................2

Ordering information .............................................2

Marking ...................................................................3

Limiting values .......................................................3

Thermal characteristics .........................................4

Characteristics .......................................................5

Package outline ................................................... 10

Legal information .................................................11

Data sheet status ............................................... 11

Definitions ...........................................................11

Disclaimers .........................................................11

Trademarks ........................................................ 12

12.1

12.2

12.3

12.4

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 06 April 2016

PSMN5R3-25MLD

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Product data sheet

6 April 2016

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PSMN5R3-25MLD [NEXPERIA]

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