PSMN8R5-100PS [NEXPERIA]
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220Production;型号: | PSMN8R5-100PS |
厂家: | Nexperia |
描述: | N-channel 100 V 8.5 mΩ standard level MOSFET in TO220Production |
文件: | 总14页 (文件大小:729K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
17 October 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
•
•
3. Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
100
263
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj = 25 °C; VGS = 10 V; Fig. 1
-
-
-
-
-
-
[1]
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 13; Fig. 12
4.5
6.4
8.5
mΩ
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
-
-
33
-
-
nC
nC
QG(tot)
111
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
-
219
mJ
source avalanche
energy
[1] Continious current limited by package.
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN8R5-100PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN8R5-100PS
PSMN8R5-100PS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tj = 25 °C; Fig. 1
[1]
-
-
-
100
75
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
A
IDM
peak drain current
429
A
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PSMN8R5-100PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
2 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Ptot
Parameter
Conditions
Min
-
Max
263
175
175
260
Unit
W
total power dissipation
storage temperature
junction temperature
peak soldering temperature
Tmb = 25 °C; Fig. 2
Tstg
-55
-55
-
°C
Tj
°C
Tsld(M)
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
100
429
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
219
mJ
[1] Continious current limited by package.
03aa16
003aak417
120
160
ID
(A)
P
der
(%)
120
80
(1)
80
40
0
40
0
0
50
100
150
200
0
50
100
150
200
°
Tmb ( C)
T
(°C)
mb
(1) Capped at 100A due to package
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
Fig. 1. Continuous drain current as a function of
mounting base temperature
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PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
3 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak418
103
IAL
(A)
102
10
1
(1)
(2)
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
003aak419
103
ID
Limit RDSon = VDS / ID
(A)
102
µ
tp =10
s
µ
100
s
10
1
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
0.57
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.49
K/W
©
PSMN8R5-100PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
4 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah108
1
= 0.5
δ
Z
th(j-mb)
(K/W)
0.2
0.1
10-1
10-2
10-3
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
2.4
3
4
Fig. 10; Fig. 11
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
VGSth
1
-
-
-
-
V
V
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
4.5
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 100 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
20
IGSS
2
2
100
100
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12
16.95 22.6
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12
-
11.18 14.9
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 13; Fig. 12
4.5
0.36
6.4
8.5
RG
gate resistance
f = 1 MHz
0.71
1.42
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
5 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
QG(tot) total gate charge
QGS
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
-
111
24
-
-
-
nC
nC
nC
gate-source charge
QGS(th)
pre-threshold gate-
source charge
16
QGS(th-pl)
post-threshold gate-
source charge
-
8
-
nC
QGD
gate-drain charge
-
-
33
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 15 A; VDS = 50 V; Fig. 14; Fig. 15
4.4
Ciss
Coss
Crss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16; Fig. 17
-
-
-
5512
380
-
-
-
pF
pF
pF
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 17
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16; Fig. 17
256
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
20
35
87
43
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18
-
-
-
0.82
53
1.2
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 50 V
Qr
recovered charge
124
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
6 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah739
003aak421
240
20
6
V
(V) = 10
GS
I
R
D
DSon
5.5
(A)
(m
)
Ω
180
15
10
5
5
120
60
0
4.5
4
0
0
2
4
6
0
5
10
15
20
V
(V)
V
(V)
DS
GS
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aak425
003aah742
120
250
ID
g
fs
(A)
(S)
200
150
100
90
60
30
0
T = 175
j
C
°
T = 25 C
°
j
50
0
0
80
160
240
320
400
0
2
4
6
8
10
I
(A)
VGS (V)
D
Fig. 8. Forward transconductance as a function of
drain current; typical values
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
©
PSMN8R5-100PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
7 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah027
003aah028
-1
5
10
V
I
GS(th)
D
(V)
(A)
max
-2
4
10
typ
max
min
-3
-4
-5
-6
typ
3
2
1
10
10
10
10
min
0
-60
0
60
120
180
0
2
4
6
V
(V)
T ( C)
°
GS
j
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature gate-source voltage
003aag818
003aak422
3
25
R
DSon
a
(m
)
Ω
5.5
4.5
5
2.4
1.8
1.2
0.6
0
20
15
10
5
6
V
(V) = 10
GS
0
0
80
160
240
-60
0
60
120
180
I (A)
°
Tj ( C)
D
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
8 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak426
10
V
VGS
DS
(V)
I
D
8
V
GS(pl)
20 V
6
4
2
80 V
VDS =50 V
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
0
Fig. 15. Gate charge waveform definitions
40
80
120
QG (nC)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aak423
003aak424
4
3
2
10
12000
C
(pF)
C
(pF)
C
iss
C
iss
8000
10
C
rss
C
C
oss
4000
rss
0
10
-1
2
0
4
8
12
10
1
10
10
V
(V)
V
DS
(V)
GS
Fig. 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
©
PSMN8R5-100PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
9 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah749
400
I
S
(A)
320
240
160
80
T = 175 C
°
j
T = 25 C
°
j
0
0
0.4
0.8
1.2
V
1.6
(V)
SD
Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
PSMN8R5-100PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
10 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 19. Package outline TO-220AB (SOT78)
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
11 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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detailed and full information. For detailed and full information see the
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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or construed as an offer to sell products that is open for acceptance or the
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
12 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
grant, conveyance or implication of any license under any copyrights, patents
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(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
13 / 14
Nexperia
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
2
3
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 11
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 October 2013
©
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 October 2013
14 / 14
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