PUMF11 [NEXPERIA]

NPN resistor-equipped transistor; PNP general purpose transistorProduction;
PUMF11
型号: PUMF11
厂家: Nexperia    Nexperia
描述:

NPN resistor-equipped transistor; PNP general purpose transistorProduction

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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
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Kind regards,  
Team Nexperia  
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PUMF11  
NPN resistor-equipped transistor;  
PNP general purpose transistor  
Product data sheet  
2002 Apr 09  
NXP Semiconductors  
Product data sheet  
NPN resistor-equipped transistor; PNP  
general purpose transistor  
PUMF11  
FEATURES  
QUICK REFERENCE DATA  
Resistor-equipped transistor and general purpose  
transistor in one package  
SYMBOL  
PARAMETER  
MAX. UNIT  
TR1 (NPN)  
100 mA collector current  
VCEO  
IO  
collector-emitter voltage 50  
V
50 V collector-emitter voltage  
300 mW total power dissipation  
output current (DC)  
bias resistor  
100  
mA  
kΩ  
kΩ  
R1  
22  
47  
SOT363 package; replaces two SOT323 (SC-70)  
packaged devices on same PCB area  
R2  
bias resistor  
TR2 (PNP)  
Reduced pick and place costs.  
VCEO  
IC  
collector-emitter voltage 50  
V
collector current (DC)  
peak collector current  
100  
200  
mA  
mA  
APPLICATIONS  
ICM  
Power management switch for portable equipment,  
e.g. cellular phone and CD player  
PINNING  
Switch for regulator.  
PIN  
1, 4  
2, 5  
6, 3  
DESCRIPTION  
TR1; TR2  
emitter  
base  
DESCRIPTION  
TR1; TR2  
TR1; TR2  
NPN resistor-equipped transistor and a PNP general  
purpose transistor in a SOT363 (SC-88) plastic package.  
collector  
MARKING  
TYPE NUMBER  
PUMF11  
MARKING CODE(1)  
6
5
4
6
5
2
4
3
R1∗  
Note  
TR2  
TR1  
1. = p: Made in Hong Kong.  
= t: Made in Malaysia.  
R2 R1  
1
Top view  
MAM465  
1
2
3
Fig.1 Simplified outline (SOT363) and symbol.  
2, 5  
6, 3  
1, 4  
MBK120  
Fig.2 Equivalent inverter symbol.  
2002 Apr 09  
2
NXP Semiconductors  
Product data sheet  
NPN resistor-equipped transistor; PNP  
general purpose transistor  
PUMF11  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Per transistor  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
Tamb 25 °C; note 1  
200  
mW  
65  
+150  
150  
°C  
°C  
°C  
junction temperature  
Tamb  
operating ambient temperature  
65  
+150  
TR1 (NPN)  
VCBO  
VCEO  
VEBO  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
open emitter  
open base  
50  
50  
10  
V
V
V
open collector  
Vi  
positive  
+40  
10  
100  
100  
V
negative  
V
IO  
output current (DC)  
peak collector current  
mA  
mA  
ICM  
TR2 (PNP)  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
open emitter  
open base  
50  
40  
5  
V
V
open collector  
V
100  
200  
mA  
mA  
ICM  
Per device  
Ptot  
total power dissipation  
Tamb 25 °C; note 1  
300  
mW  
Note  
1. Device mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
416  
UNIT  
Rth j-a  
thermal resistance from junction to ambient in free air; note 1  
K/W  
Note  
1. Device mounted on an FR4 printed-circuit board.  
2002 Apr 09  
3
NXP Semiconductors  
Product data sheet  
NPN resistor-equipped transistor; PNP  
general purpose transistor  
PUMF11  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
TR1 (NPN)  
ICBO  
collector-base cut-off current  
collector-emitter cut-off current  
VCB = 50 V; IE = 0  
100  
1
nA  
µA  
µA  
ICEO  
VCE = 30 V; IB = 0  
VCE = 30 V; IB = 0; Tj = 150 °C  
VEB = 5 V; IC = 0  
50  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
0.12 mA  
VCE = 5 V; IC = 5 mA  
80  
VCEsat  
Vi(off)  
Vi(on)  
R1  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
150  
0.5  
mV  
V
input off voltage  
input on voltage  
input resistor  
VCE = 5 V; IC = 100 µA  
0.9  
1.1  
VCE = 0.3 V; IC = 2 mA  
2
V
15.4 22  
28.6 kΩ  
resistor ratio  
1.7  
2.1  
2.6  
R2  
-------  
R1  
Cc  
collector capacitance  
VCB = 10 V; IE = ie = 0; f = 1 MHz  
2.5  
pF  
TR2 (PNP)  
ICBO  
ICEO  
IEBO  
hFE  
collector-base cut-off current  
collector-emitter cut-off current  
emitter-base cut-off current  
DC current gain  
VCB = 30 V; IE = 0  
100 nA  
10 µA  
VCB = 30 V; IB = 0; Tj = 150 °C  
VEB = 4 V; IC = 0  
100 nA  
VCE = 6 V; IC = 1 mA  
120  
VCEsat  
Cc  
saturation voltage  
IC = 50 mA; IB = 5 mA; note 1  
VCB = 12 V; IE = ie = 0; f = 1 MHz  
200 mV  
collector capacitance  
transition frequency  
2.2  
pF  
fT  
VCE = 12 V; IC = 2 mA; f = 100 MHz 100  
MHz  
Note  
1. Device mounted on an FR4 printed-circuit board.  
APPLICATION INFORMATION  
4
handbook, halfpage  
3
5
R
BE(ext)  
R
B(ext)  
6
R1  
2
R2  
1
MHC182  
Fig.3 Typical power management circuit.  
2002 Apr 09  
4
NXP Semiconductors  
Product data sheet  
NPN resistor-equipped transistor; PNP  
general purpose transistor  
PUMF11  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2002 Apr 09  
5
NXP Semiconductors  
Product data sheet  
NPN resistor-equipped transistor; PNP  
general purpose transistor  
PUMF11  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2002 Apr 09  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/01/pp7  
Date of release: 2002 Apr 09  
Document order number: 9397 750 09388  

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