PXP020-20QX [NEXPERIA]
20 V, P-channel Trench MOSFETProduction;
| 型号： | PXP020-20QX |
| 厂家： | 
Nexperia |
| 描述： | 20 V, P-channel Trench MOSFETProduction |
| 文件： | 总14页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PXP020-20QX
20 V, P-channel Trench MOSFET
26 October 2021
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-
Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
3. Applications
•
•
•
•
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
-20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
12
V
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-12.1
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -7.7 A; Tj = 25 °C
VGS = -2.5 V; ID = -5.8 A; Tj = 25 °C
-
-
16
20
mΩ
mΩ
26.4
35.2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
D
D
D
1
2
3
4
2
D
3
4
G
5
drain
S
6
drain
017aaa257
8
7
6
5
7
drain
MLPAK33 (SOT8002-1)
8
drain
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PXP020-20QX
MLPAK33
plastic thermal enhanced surface mounted package; mini SOT8002-1
leads; 8 terminals; pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
8AD
PXP020-20QX
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PXP020-20QX
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Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
2 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
12
V
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
VGS = -4.5 V; Tsp = 25 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C; t ≤ 5 s
[1]
[1]
[1]
-
-12.1
-8
A
-
A
-
-4.8
-23.5
-42.4
4.2
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[1]
[1]
-
W
W
W
°C
°C
°C
Tamb = 25 °C
-
1.7
Tsp = 25 °C
-
15
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
-1.7
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-030137
aaa-030138
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
(°C)
-25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continous drain current as a
function of ambient temperature
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PXP020-20QX
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Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
3 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
aaa-032734
2
-10
I
D
t
= 10 µs
p
Limit R
DSon
= V / I
DS D
(A)
100 µs
-10
1 ms
-1
-1
10 ms
DC; T = 25 °C
sp
100 ms
-10
-2
-3
-4
-10
-10
-10
DC; T
6 cm
= 25 °C;
amb
2
-1
2
-10
-1
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PXP020-20QX
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Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
4 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
150
60
Max
190
75
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
25
30
Rth(j-sp)
thermal resistance from
junction to solder point
4
8
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-032531
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-032532
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
0.25
10
0.1
0.05
0.02 0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
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Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS=VGS; Tj = 25 °C
voltage
-0.7
-0.9
-1.25
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -7.7 A; Tj = 25 °C
VGS = -4.5 V; ID = -7.7 A; Tj = 150 °C
VGS = -2.5 V; ID = -5.8 A; Tj = 25 °C
VDS = -10 V; ID = -7.7 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-1
µA
nA
nA
mΩ
mΩ
mΩ
S
-
-100
100
20
-
RDSon
drain-source on-state
resistance
16
22.7
26.4
21.4
28.4
35.2
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
6.4
-
Ω
Dynamic characteristics
QG(tot)
QGS
total gate charge
VDS = -10 V; ID = -7.7 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
19.4
3.4
29.1
nC
nC
nC
gate-source charge
-
-
QGS(th)
pre-threshold gate-
source charge
1.6
QGS(th-pl)
post-threshold gate-
source charge
-
1.8
-
nC
QGD
gate-drain charge
-
-
6.2
-
-
nC
V
VGSpl
gate-source plateau
voltage
VDS = -10 V; ID = -7.7 A; Tj = 25 °C
-1.8
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
-
-
1900
275
-
-
-
pF
pF
pF
reverse transfer
capacitance
250
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -5.8 A; VGS = -4.5 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
6
-
-
-
-
ns
ns
ns
ns
23
46
31
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = -1.7 A; VGS = 0 V; Tj = 25 °C
-
-
-
-
-0.7
26
10
6
-1.2
V
reverse recovery time IS = -1.7 A; dIS/dt = 100 A/µs;
-
-
-
ns
nC
ns
VGS = -4.5 V; VDS = -10 V; Tj = 25 °C
Qr
ta
recovered charge
reverse recovery rise
time
tb
reverse recovery fall
time
-
20
-
ns
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
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Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
aaa-032736
aaa-032735
-3
-4
-5
-6
-10
-25
I
D
(A)
I
D
-4.5 V
-2.5 V
(A)
-20
-10
V
= -2 V
-15
-10
-5
GS
min
typ
max
-1.8 V
-1.4 V
-10
-10
0
0
-0.5
-1
-1.5
-2
0
-1
-2
-3
-4
V
(V)
V
(V)
GS
DS
Tj = 25 °C; VDS = -5 V
Tj = 25 °C
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-032737
aaa-032738
100
100
-1.8 V
-2 V
R
DSon
R
DSon
80
80
60
40
20
0
60
40
20
0
V
= -2.5 V
-4.5 V
GS
T = 150 °C
j
T = 25 °C
j
0
-5
-10
-15
-20
-25
0
-2
-4
-6
-8
-10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = -7.7 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
7 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
aaa-032739
aaa-032548
-30
2
1.5
1
a
I
D
(A)
-20
-10
0.5
T = 150 °C
j
T = 25 °C
j
0
0
-60
0
-1
-2
-3
-4
0
60
120
180
V
(V)
T (°C)
j
DS
VDS = -5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-032740
aaa-032741
4
-2
10
V
GS(th)
(V)
C
(pF)
-1.5
-1
max
typ
C
iss
3
10
min
-0.5
C
oss
rss
C
2
0
-60
10
-1
2
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
8 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
aaa-032742
-5
V
DS
V
GS
(V)
I
D
-4
-3
-2
-1
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
5
10
15
20
Q
25
(nC)
G
VDS = -10 V; ID = -7.7 A; Tj = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aal160
aaa-032743
-1.5
S
I
D
(A)
I
(A)
t
rr
-1
t
t
b
a
0
T = 150 °C
j
T = 25 °C
j
-0.5
0.25 I
RM
I
RM
0
t (s)
0
-0.4
-0.8
-1.2
V
(V)
SD
Fig. 16. Reverse recovery timing definition
VGS = 0 V
Fig. 17. Source current as a function of source-drain
voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
9 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
12. Package outline
MLPAK33: plastic thermal enhanced surface mounted package; mini leads; 8 terminals;
pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body
SOT8002-1
X
b
(8x)
v
B
C A
C
e
(6x)
w
y
C
1
4
K
L
1
(4x)
E
2
L
2
8
5
D
2
A
B
A
8
5
θ
E
E
1
E
3
C
c
Seating Plane
1
4
y
C
1
D
1
detail X
5 mm
D
0
scale
Dimensions (mm are the original dimensions)
Unit
A
b
c
D
D
1
D
2
e
E
E
E
E
K
L
1
L
2
θ
y
y
1
v
w
1
2
3
max 0.90 0.35 0.18 3.50 3.25 2.65
3.30
min 0.70 0.25 0.12 3.10 3.05 2.45
3.50 3.10 1.99 0.25
0.40 0.58 12°
0.25 0.43 10°
0.10 0.28 8°
0.65
(ref)
0.65 3.30
0.80 0.30 0.15
3.15 2.55
3.00 1.89 0.20
nom
mm
0.05 0.05 0.1 0.05
3.10 2.90 1.79 0.15
sot8002-1_po
References
Outline
version
European
projection
Issue date
19-12-19
IEC
JEDEC
EIAJ
SOT8002-1
20-01-09
Fig. 19. Package outline MLPAK33 (SOT8002-1)
©
PXP020-20QX
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Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
10 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of MLPAK33 package
SOT8002-1
3.55
2.60
2.45
2.35
0.50
2.68 2.58
0.20
3.25 3.80 4.05
0.70
0.95
0.52 0.62
0.20
0.70 0.60 0.50
0.30
0.40
0.50
0.65
2.65
0.15
0.25
recommended stencil thickness: 0.1 mm
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
19-12-20
Issue date
sot8002-1_fr
Fig. 20. Reflow soldering footprint for MLPAK33 (SOT8002-1)
©
PXP020-20QX
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Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
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Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
PXP020-20QX v.2
Modifications:
Release date
20211026
Data sheet status
Change notice
Supersedes
Product data sheet
-
PXP020-20QX v.1
•
Chapter "Limiting values": Ptot corrected, now matching the data in chapter "Thermal
characteristics"
PXP020-20QX v.1
20210414
Product data sheet
-
-
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
12 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
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15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
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and products using Nexperia products, and Nexperia accepts no liability for
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Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
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Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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products in automotive equipment or applications.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
13 / 14
Nexperia
PXP020-20QX
20 V, P-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 October 2021
©
PXP020-20QX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
26 October 2021
14 / 14
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