PZU24B3A [NEXPERIA]

Single Zener diodesProduction;
PZU24B3A
型号: PZU24B3A
厂家: Nexperia    Nexperia
描述:

Single Zener diodesProduction

测试 光电二极管
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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
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salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
PZUxBA series  
Single Zener diodes  
Rev. 01 — 19 September 2008  
Product data sheet  
1. Product profile  
1.1 General description  
General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted  
Device (SMD) plastic package.  
1.2 Features  
I Non-repetitive peak reverse power  
dissipation: PZSM 40 W  
I Low reverse current IR range  
I Total power dissipation: Ptot 320 mW I Small plastic package suitable for  
surface-mounted design  
I Tolerance series:  
I AEC-Q101 qualified  
B: approximately ±5 %;  
B1, B2, B3: approximately ±2 %  
I Wide working voltage range:  
nominal 2.4 V to 36 V (E24 range)  
1.3 Applications  
I General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
IF = 100 mA  
Min  
Typ  
Max  
1.1  
40  
Unit  
V
[1]  
[2]  
VF  
forward voltage  
-
-
-
-
PZSM  
non-repetitive peak reverse  
power dissipation  
W
[3]  
Ptot  
total power dissipation  
T
amb 25 °C  
-
-
320  
mW  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
1
2
2
anode  
2
1
006aaa152  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
plastic surface-mounted package; 2 leads  
Version  
PZU2.4BA to  
PZU36BA[1]  
SC-76  
SOD323  
PZU2.4BA/DG to  
PZU36BA/DG[1][2]  
[1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V.  
[2] /DG: halogen-free  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
2 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
4. Marking  
Table 4.  
Marking codes  
Type number[1] Marking code  
Type number[1]  
Marking code  
B
B1  
-
B2  
-
B3  
-
B
B1  
-
B2  
B3  
-
PZU2.4*A  
PZU2.7*A  
PZU3.0*A  
PZU3.3*A  
PZU3.6*A  
PZU3.9*A  
PZU4.3*A  
PZU4.7*A  
PZU5.1*A  
PZU5.6*A  
PZU6.2*A  
PZU6.8*A  
PZU7.5*A  
PZU8.2*A  
PZU9.1*A  
PZU10*A  
PZU11*A  
PZU12*A  
PZU13*A  
PZU14*A  
PZU15*A  
PZU16*A  
PZU18*A  
PZU20*A  
PZU22*A  
PZU24*A  
PZU27*A  
PZU30*A  
PZU33*A  
PZU36*A  
X8  
X9  
XT  
XW  
XZ  
ME  
MM  
MS  
MW  
LF  
PZU2.4*A/DG  
PZU2.7*A/DG  
PZU3.0*A/DG  
PZU3.3*A/DG  
PZU3.6*A/DG  
PZU3.9*A/DG  
PZU4.3*A/DG  
PZU4.7*A/DG  
PZU5.1*A/DG  
PZU5.6*A/DG  
PZU6.2*A/DG  
PZU6.8*A/DG  
PZU7.5*A/DG  
PZU8.2*A/DG  
PZU9.1*A/DG  
PZU10*A/DG  
PZU11*A/DG  
PZU12*A/DG  
PZU13*A/DG  
PZU14*A/DG  
PZU15*A/DG  
PZU16*A/DG  
PZU18*A/DG  
PZU20*A/DG  
PZU22*A/DG  
PZU24*A/DG  
PZU27*A/DG  
PZU30*A/DG  
PZU33*A/DG  
PZU36*A/DG  
Y8  
-
XA  
XU  
XX  
MC  
MF  
MN  
MT  
MX  
LG  
LM  
LS  
LW  
CR  
CV  
VB  
VF  
VL  
VR  
-
XB  
XV  
XY  
MD  
MG  
MP  
MU  
MY  
LH  
LN  
LT  
-
Y9  
YA  
YU  
YX  
NC  
NF  
NN  
NT  
NX  
RG  
RM  
RS  
RW  
ER  
EV  
WB  
WF  
WL  
WR  
-
YB  
YV  
YY  
ND  
NG  
NP  
NU  
NY  
RH  
RN  
RT  
RX  
ES  
EW  
WC  
WG  
WM  
WS  
WU  
-
-
YT  
YW  
YZ  
NE  
NM  
NS  
NW  
RF  
RL  
RR  
RV  
RZ  
EU  
WA  
WE  
WK  
WP  
-
-
-
-
-
-
-
-
MR  
MV  
MZ  
LK  
LP  
LU  
LY  
CT  
CX  
VD  
VH  
VN  
VT  
-
NR  
NV  
NZ  
RK  
RP  
RU  
RY  
ET  
EX  
WD  
WH  
WN  
WT  
-
LL  
LR  
LV  
LX  
CS  
CW  
VC  
VG  
VM  
VS  
VU  
VX  
X2  
X6  
XE  
XK  
XP  
-
LZ  
CU  
VA  
VE  
VK  
VP  
-
VV  
VZ  
X4  
XC  
XG  
XM  
XS  
MH  
MK  
ML  
VW  
X1  
X5  
XD  
XH  
XN  
-
VY  
X3  
X7  
XF  
XL  
XR  
-
WV  
WZ  
Y4  
WW WX  
WY  
Y3  
Y7  
YF  
YL  
YR  
-
Y1  
Y5  
YD  
YH  
YN  
-
Y2  
Y6  
YE  
YK  
YP  
-
YC  
YG  
YM  
YS  
NH  
NK  
NL  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] * = B: tolerance series B, approximately ±5 %  
* = B1, B2, B3: tolerance series B1, B2, B3: approximately ±2 %  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
3 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
IF  
Parameter  
Conditions  
Min  
Max  
Unit  
forward current  
-
-
200  
mA  
[1]  
[1]  
IZSM  
non-repetitive peak reverse  
current  
see  
Table 8  
and 9  
PZSM  
Ptot  
non-repetitive peak reverse  
power dissipation  
-
40  
W
[2]  
[3]  
total power dissipation  
Tamb 25 °C  
-
320  
mW  
mW  
°C  
-
490  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
Tamb  
Tstg  
55  
65  
+150  
+150  
°C  
°C  
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
[2]  
[3]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
-
-
390  
255  
55  
K/W  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[3] Soldering point of cathode tab.  
7. Characteristics  
Table 7.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
VF  
forward voltage  
IF = 10 mA  
-
-
-
-
0.9  
1.1  
V
V
IF = 100 mA  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
4 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
Table 8.  
Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG  
Tj = 25 °C unless otherwise specified.  
PZUxBA Sel  
Working  
voltage  
VZ (V)  
Differentialresistance Reverse  
Temperature Diode  
Non-repetitive  
rdif ()  
current  
coefficient  
SZ (mV/K)  
capacitance peak reverse  
Cd (pF)[1]  
IR (µA)  
current  
ZSM (A)[2]  
I
IZ = 5 mA  
IZ = 0.5 mA IZ = 5 mA  
Max  
IZ = 5 mA  
Min  
2.3  
2.5  
2.5  
Max Max  
Max  
50  
VR (V) Typ  
Max  
450  
440  
Max  
8
2.4  
2.7  
B
2.6  
1000  
1000  
100  
100  
1
1
1.6  
2.0  
B
2.9  
20  
8
B1  
B2  
B
2.75  
2.65 2.9  
3.0  
3.3  
3.6  
3.9  
4.3  
2.8  
2.8  
3.2  
1000  
1000  
1000  
1000  
95  
95  
90  
90  
90  
10  
5
1
1
1
1
1
2.1  
2.4  
2.4  
2.5  
2.5  
425  
410  
390  
370  
350  
8
8
8
8
8
B1  
B2  
B
3.05  
2.95 3.2  
3.1  
3.1  
3.5  
B1  
B2  
B
3.35  
3.25 3.5  
3.4  
3.4  
3.8  
5
B1  
B2  
B
3.65  
3.55 3.8  
3.7  
3.7  
4.1  
3
B1  
B2  
B
3.97  
3.87 4.10  
4.01 4.48 1000  
4.01 4.21  
3
B1  
B2  
B3  
B
4.15 4.34  
4.28 4.48  
4.7  
5.1  
5.6  
4.42 4.9  
4.42 4.61  
4.55 4.75  
4.69 4.9  
800  
80  
60  
40  
2
2
1
1
1.4  
0.3  
325  
300  
275  
8
B1  
B2  
B3  
B
4.84 5.37 250  
4.84 5.04  
1.5  
2.5  
5.5  
5.5  
B1  
B2  
B3  
B
4.98 5.2  
5.14 5.37  
5.31 5.92 100  
5.31 5.55  
1.9  
B1  
B2  
B3  
5.49 5.73  
5.67 5.92  
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
5 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
Table 9.  
Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG  
Tj = 25 °C unless otherwise specified.  
PZUxBA Sel  
Working  
voltage  
VZ (V)  
Differentialresistance Reverse  
Temperature Diode  
Non-repetitive  
rdif ()  
current  
IR (nA)  
coefficient  
SZ (mV/K)  
capacitance peak reverse  
Cd (pF)[1]  
current  
ZSM (A)[2]  
I
IZ = 5 mA  
IZ = 0.5 mA IZ = 5 mA  
Max  
IZ = 5 mA  
Min  
Max Max  
Max  
VR (V) Typ  
Max  
Max  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
B
5.86 6.53 80  
5.86 6.12  
30  
20  
10  
10  
10  
10  
10  
10  
10  
500  
3
2.7  
3.4  
4.0  
4.6  
5.5  
6.4  
7.4  
8.4  
9.4  
250  
5.5  
B1  
B2  
B3  
B
6.06 6.33  
6.26 6.53  
6.47 7.14 60  
6.47 6.73  
500  
500  
500  
500  
100  
100  
100  
100  
3.5  
4
215  
170  
150  
120  
110  
108  
105  
103  
5.5  
3.5  
3.5  
3.5  
3.5  
3
B1  
B2  
B3  
B
6.65 6.93  
6.86 7.14  
7.06 7.84 60  
7.06 7.36  
B1  
B2  
B3  
B
7.28 7.60  
7.52 7.84  
7.76 8.64 60  
7.76 8.1  
5
B1  
B2  
B3  
B
8.02 8.36  
8.28 8.64  
8.56 9.55 60  
8.56 8.93  
6
B1  
B2  
B3  
B
8.85 9.23  
9.15 9.55  
9.45 10.55 60  
9.45 9.87  
7
B1  
B2  
B3  
B
9.77 10.21  
10.11 10.55  
10.44 11.56 60  
10.44 10.88  
10.76 11.22  
11.1 11.56  
11.42 12.6 80  
11.42 11.9  
11  
8
B1  
B2  
B3  
B
12  
9
3
B1  
B2  
B3  
B
11.74 12.24  
12.08 12.6  
13  
12.47 13.96 80  
12.47 13.03  
12.91 13.49  
13.37 13.96  
10  
2.5  
B1  
B2  
B3  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
6 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
Table 9.  
Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG …continued  
Tj = 25 °C unless otherwise specified.  
PZUxBA Sel  
Working  
voltage  
VZ (V)  
Differentialresistance Reverse  
Temperature Diode  
Non-repetitive  
rdif ()  
current  
IR (nA)  
coefficient  
SZ (mV/K)  
capacitance peak reverse  
Cd (pF)[1]  
current  
ZSM (A)[2]  
I
IZ = 5 mA  
IZ = 0.5 mA IZ = 5 mA  
Max  
IZ = 5 mA  
Min  
Max Max  
Max  
100  
50  
VR (V) Typ  
Max  
101  
99  
Max  
2
14  
15  
B2  
B
13.70 14.30 80  
13.84 15.52 80  
13.84 14.46  
10  
15  
11  
11  
10.4  
11.4  
2
B1  
B2  
B3  
B
14.34 14.98  
14.85 15.52  
16  
18  
20  
22  
24  
15.37 17.09 80  
15.37 16.01  
20  
20  
20  
25  
30  
50  
50  
50  
50  
50  
12  
13  
15  
17  
19  
12.4  
14.4  
16.4  
18.4  
20.4  
97  
93  
88  
84  
80  
1.5  
1.5  
1.5  
1.3  
1.3  
B1  
B2  
B3  
B
15.85 16.51  
16.35 17.09  
16.94 19.03 80  
16.94 17.7  
B1  
B2  
B3  
B
17.56 18.35  
18.21 19.03  
18.86 21.08 100  
18.86 19.7  
B1  
B2  
B3  
B
19.52 20.39  
20.21 21.08  
20.88 23.17 100  
20.88 21.77  
B1  
B2  
B3  
B
21.54 22.47  
22.23 23.17  
22.93 25.57 120  
22.93 23.96  
B1  
B2  
B3  
B
23.72 24.78  
24.54 25.57  
27  
30  
33  
36  
25.1 28.9 150  
40  
40  
40  
60  
50  
50  
50  
50  
21  
23  
25  
27  
23.4  
26.6  
29.7  
33.0  
73  
66  
60  
59  
1
B
28  
31  
34  
32  
35  
38  
200  
250  
300  
1
B
0.9  
0.8  
B
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
7 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
006aab215  
mbg781  
3
10  
300  
P
(W)  
I
ZSM  
F
(mA)  
2
10  
200  
10  
100  
1
10  
0
0.6  
4  
3  
2  
10  
10  
0.8  
1
t
(s)  
V (V)  
F
p
Tj = 25 °C (prior to surge)  
Tj = 25 °C  
Fig 1. Non-repetitive peak reverse power dissipation  
as a function of pulse duration; maximum  
values  
Fig 2. Forward current as a function of forward  
voltage; typical values  
mgl274  
mgl273  
10  
0
12  
S
S
Z
Z
11  
4.3  
(mV/K)  
(mV/K)  
10  
9.1  
5
1  
8.2  
7.5  
6.8  
3.9  
3.6  
6.2  
5.6  
5.1  
0
2  
3  
3.3  
4.7  
3.0  
2.4  
2.7  
5  
0
4
8
12  
16  
20  
0
20  
40  
60  
I
(mA)  
I
(mA)  
Z
Z
Tj = 25 °C to 150 °C  
Tj = 25 °C to 150 °C  
VZ = 2.4 V to 4.3 V  
VZ = 4.7 V to 12 V  
Fig 3. Temperature coefficient as a function of  
working current; typical values  
Fig 4. Temperature coefficient as a function of  
working current; typical values  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
8 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
006aab246  
006aab247  
2
2
10  
10  
V
(V) = 4.7  
I
I
Z
Z(nom)  
Z
(mA)  
(mA)  
V
(V) = 2.4  
Z(nom)  
3.6 4.3  
3.9  
3.0  
3.3  
10  
10  
5.6  
6.8  
9.1  
11  
2.7  
6.2  
8.2  
7.5  
5.1  
10  
12  
1
1
1  
1  
10  
10  
2  
2  
10  
10  
10  
10  
3  
3  
0
1
2
3
4
5
0
2
4
6
8
10  
12  
V (V)  
Z
14  
V
(V)  
Z
Tj = 25 °C  
VZ = 2.4 V to 4.3 V  
Tj = 25 °C  
VZ = 4.7 V to 12 V  
Fig 5. Working current as a function of working  
voltage; typical values  
Fig 6. Working current as a function of working  
voltage; typical values  
006aab248  
2
10  
I
V
(V) = 13  
Z
Z(nom)  
(mA)  
10  
14  
15  
16  
18  
22  
27  
33  
20  
24  
30  
36  
1
1  
10  
10  
10  
2  
3  
10  
20  
30  
40  
V
(V)  
Z
Tj = 25 °C  
VZ = 13 V to 36 V  
Fig 7. Working current as a function of working voltage; typical values  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
9 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
8. Test information  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
9. Package outline  
1.35  
1.15  
1.1  
0.8  
0.45  
0.15  
1
2.7 1.8  
2.3 1.6  
2
0.40  
0.25  
0.25  
0.10  
Dimensions in mm  
03-12-17  
Fig 8. Package outline SOD323 (SC-76)  
10. Packing information  
Table 10. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
10000  
PZU2.4BA to  
PZU36BA  
SOD323  
4 mm pitch, 8 mm tape and reel  
-115  
-135  
PZU2.4BA/DG to  
PZU36BA/DG  
[1] For further information and the availability of packing methods, see Section 13.  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
10 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
11. Soldering  
3.05  
2.1  
solder lands  
solder resist  
1.65 0.95  
0.5 (2×) 0.6 (2×)  
solder paste  
occupied area  
2.2  
Dimensions in mm  
0.5  
(2×)  
0.6  
(2×)  
sod323_fr  
Fig 9. Reflow soldering footprint SOD323 (SC-76)  
5
2.9  
1.5 (2×)  
solder lands  
solder resist  
occupied area  
1.2  
2.75  
Dimensions in mm  
(2×)  
preferred transport  
direction during soldering  
sod323_fw  
Fig 10. Wave soldering footprint SOD323 (SC-76)  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
11 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
12. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20080919  
Data sheet status  
Change notice  
Supersedes  
PZUXBA_SER_1  
Product data sheet  
-
-
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
12 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
13.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PZUXBA_SER_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 19 September 2008  
13 of 14  
PZUxBA series  
NXP Semiconductors  
Single Zener diodes  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10  
Quality information . . . . . . . . . . . . . . . . . . . . . 10  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packing information. . . . . . . . . . . . . . . . . . . . . 10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 19 September 2008  
Document identifier: PZUXBA_SER_1  

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