NSD32TR-5KF [NICHICON]
Rectifier Diode,;型号: | NSD32TR-5KF |
厂家: | NICHICON CORPORATION |
描述: | Rectifier Diode, |
文件: | 总5页 (文件大小:341K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Surface Mount Schottky Barrier Rectifier Diode
NSD Series
FEATURES
• VOLTAGE: 20 TO 100 VOLTS, CURRENT: 1.0 & 2.0 AMPERE
• FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS
• FAST RESPONSE AND LOW FORWARD VOLTAGE
• HIGH TEMPERATURE SOLDERING (250OC/10 SECONDS)
• EASY PICK AND PLACE
RoHS
Compliant
includes all homogeneous materials
*See Part Number System for Details
CATHODE
1.25~1.45
2.54~2.79
MECHANICAL DATA:
SIZE: SMA/DO-214AC
CASE: Molded epoxy
TERMINALS: Solder plated Copper alloy
POLARITY: Indicated by cathode band
3.99~4.50
4.93~5.28
STANDARD PACKAGING: 12mm tape (EIA-RS-481)
WEIGHT: 0.064 gram
1.98~2.29
.8~1.3
0.76~1.27
PART NUMBERING SYSTEM
0.1~0.2
NSD 14 TR 5K F
Dimensions (millimeters)
RoHS Compliant
Reel qty: (5K & 7.5K)
Tape and Reel
Voltage & Current Designator (See ratings tables)
Series
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
NSD12 NSD13 NSD14 NSD15 NSD16 NSD18 NSD19 NSD100
Ratings
Symbol
VRRM
VRMS
VDC
UNITS
Volts
Volts
Volts
Amps
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
90
64
90
100
71
100
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half sine-wave
supreimposed on rated load (JEDEC method)
Io
1.0
30
IFSM
Amps
°C/W
(Note 2)
RqJL
Maximum Thermal Resistance
25
80
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
Typical Reverse Recovery Time
CJ
TJ, TSTG
TRR
110
70
pF
°C
nS
-55 ~ +150
15
ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)
NSD12 NSD13 NSD14 NSD15 NSD16 NSD18 NSD19 NSD100
Characteristics
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage (Note 3)
Symbol
VF
UNITS
Volts
mAmps
mAmps
0.50
0.65
0.5
0.85
@TA=25°C
@TA=100°C
IR
10.0
NOTES:
1. Measured at 1.0MHz and applied average voltage of 4.0VDC.
2. Thermal resistance junction to terminal, 5mm2 (0.013 mm Thick) copper land patterns.
3. Pulse width 300uS, 2% duty cycle.
®
NIC COMPONENTS
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1
Surface Mount Schottky Barrier Rectifier Diode
NSD Series
RATING AND CHARACTERISTIC CURVES (NSD12 THRU NSD100)
FIG. 1 - FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE FOR-
WARD SURGE CURRENT
1.0
.8
50
40
30
8.3ms Single Half Sine-Wave
(JEDEC Method) TJ=125OC
NSD15, 16
.6
NSD12~14
.4
.2
0
20
10
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
4
10
20
60
40
80 100
1
2
6
8
50
125
150
0
25
75
100
175
AMBIENT TEMPERATURE, (OC)
NUMBER OF CYCLES AT 60Hz
®
NIC COMPONENTS
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2
NSD Series
Surface Mount Schottky Barrier Rectifier Diode
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
Ratings
Symbol
VRRM
VRMS
VDC
NSD22
20
NSD23
30
NSD24
40
NSD25
50
NSD26
UNITS
Volts
MaximumRecurrent Peak Reverse Voltage
MaximumRMS Voltage
60
42
60
14
21
28
35
Volts
MaximumDC Blocking Voltage
MaximumAverage Forward Rectified Current
20
30
40
50
Volts
lo
2.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
50
Amps
oC/W
Rth-JA
Rth-JL
75.0
17.0
Typical Thermal Resistance
Typical Junction Capacitance (Note 1)
CJ
220
180
pF
oC
Operating and Storage Temperature Range
TJ/TSTG
-65 to +125/-65 to +150
-65 to +150
ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)
Characteristics
Symbol
NSD22
NSD23
NSD24
0.5
NSD25
NSD26
UNITS
MaximumForward Voltage at 2.0A DC
VF
0.50
0.70
Volts
MaximumDC Reverse Current at
Rated DC Blocking Voltage
@TA=25°C
@TA=100oC
mAmps
mAmps
IR
20.0
10.0
NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.
Fig. 1 - Derated Curve for Output
Rectifier Current
Fig. 2 - Typcial Junction Capacitance
500
100
2.0
Resistive or
TJ=25°C
f=1.0MHz
Vsig=50mV p-p
Inductive Load
1.5
NSD22 ~ NSD24
NSD22
&
NSD24
1.0
NSD22 ~ NSD24
NSD25 ~ NSD26
PCB Mounted on
0.5
0.2x0.2”(5.0x5.0mm)
10
Copper Pad Areas
0.1
1.0
10
100
Reverse Voltage, Volts
0
50 60 70 80 90 100 110 120 130 140 150 160
Lead Temperature,°C
Fig. 3 - Typical Reverse
Current Characteristics
Fig. 4 - Maximum Non-Repetive Peak
Forward Surge Current
Fig. 5 - Typical Instantaneous Forward
Characteristics
100
10
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method) at Rated TL
40
TA=125°C
TA=75°C
10
1
30
20
10
0
Pulse Width=300µS
1% Duty Cycle
TJ=125°C
1
TJ=25°C
0.1
0.01
0.001
TJ=150°C
1
10
100
Number of Cycles at 60Hz
TA=25°C
0.1
Percentage of Rated Peak
Reverse Voltage, %
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantanesous Forward Voltage,
Volts
®
NIC COMPONENTS
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3
NSD Series
Surface Mount Schottky Barrier Rectifier Diode
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
Ratings
Symbol
VRRM
VRMS
VDC
NSD32
20
NSD33
30
NSD34
40
NSD35
50
NSD36
UNITS
Volts
MaximumRecurrent Peak Reverse Voltage
MaximumRMS Voltage
60
42
60
14
21
28
35
Volts
MaximumDC Blocking Voltage
MaximumAverage Forward Rectified Current
20
30
40
50
Volts
lo
3.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
80
Amps
oC/W
Rth-JA
Rth-JL
55.0
17.0
Typical Thermal Resistance
Typical Junction Capacitance (Note 1)
CJ
pF
oC
Operating and Storage Temperature Range
TJ/TSTG
-55 to +125/-55 to +150
-55 to +150
ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)
Characteristics
Symbol
NSD32
NSD33
NSD34
0.5
NSD35
NSD36
UNITS
MaximumForward Voltage at 3.0A DC
VF
0.50
0.60
Volts
MaximumDC Reverse Current at
Rated DC Blocking Voltage
@TA=25°C
@TA=100oC
mAmps
mAmps
IR
20.0
10.0
NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.
Fig. 1 - Derated Curve for Output
Fig. 3 - Typcial Junction Capacitance
Fig. 2 - Maximum Non-Repetive Peak
Forward Surge Current
Rectifier Current
1000
TJ=25°C
f=1.0MHz
Vsig=50mV p-p
Resistive or Inductive Load
100
3.0
2.5
2.0
1.5
1.0
0.5
0
At Rated TL
8.3ms Single Half Sine-wave
(JEDEC Method)
NSD35~ NSD36
80
NSD32 ~ NSD34
60
40
20
0
PCB Mounted on
0.55 x 0.55” (14 x 14mm)
Copper Pad Areas
100
10
1
10
100
NSD32 ~ NSD34
NSD35 ~ NSD36
Number of Cycles at 60Hz
50 60 70 80 90 100 110 120 130 140 150 160
Lead Temperature,°C
0.1
1.0
10
100
Reverse Voltage, Volts
Fig. 5 - Typical Reverse
Current Characteristics
Fig. 6 - Maximum Non-Repetive Peak
Forward Surge Current
Fig. 4 - Typical Instantaneous Forward
Characteristics
20
10
100
30
TJ = 125°C
TA=125°C
10
10
1
Pulse Width=300µS
1% Duty Cycle
TJ = 150°C
1
TJ = 25°C
1
TA=75°C
0.01
0.1
0.01
0.1
1
10
100
0.1
0.01
t1 Pulse Duraton, sec.
NSD32 ~ NSD34
NSD35 ~ NSD36
0.01
0.001
TA=25°C
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantanesous Forward Voltage,
Volts
NSD32 ~ NSD34
NSD35 ~ NSD36
Percentage of Rated Peak
Reverse Voltage, %
®
NIC COMPONENTS
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4
Surface Mount Diodes
NRD And NSD Series
TAPING AND MOUNTING SPECIFICATIONS
P0
P1
d
P
A
D1
D1
T
C
D
W1
RECOMMENDED LAND PATTERN
Dimensions
(mm)
1.2-1.8
1.5-2.2
2.7 max.
REEL QUANTITIES
B
A
B
C
Reel Size
Reel Quantity
13 inch (330mm)
5,000 & 7,500 pcs
A
A
C
Item
Symbol
A
Specifications (mm)
3.2 max.
Specifications (inch)
.126 max.
Carrier Width
Carrier Length
Carrier Depth
B
7.8 max.
.307 max.
C
4.5 max.
.177 max.
Sprocket Hole
d
1.5 0.1
.059 .004
7.00 .079
1.969 min.
.512 .020
.069 .004
.217 .004
.157 .004
.157 .004
.079 .002
.043 max.
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
D
178 2.0
50 min.
D1
D2
E
13.0 0.5
1.75 0.1
5.5 0.1
F
P
4.0 0.1
P0
P1
T
4.0 0.1
2.0 0.05
1.1 max.
W
W1
12.0 0.3
18.4 max.
.472 .012
.724 max.
Reel Width
NOTE: Devices are packed in accordance with EIA standard RS-481-A and specifications given above.
®
NIC COMPONENTS
www.niccomp.com
www.lowESR.com
www.RFpassives.com
5
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