NEXC473Z55V105X55TRF [NIC]

V-Chip Memory Back-Up Capacitors;


型号：	NEXC473Z55V105X55TRF
厂家：	NIC-COMPONENTS CORP.
描述：	V-Chip Memory Back-Up Capacitors
文件：	总3页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V-Chip Memory Back-Up Capacitors

NEXC Series

FEATURES

• DOUBLE LAYER CONSTRUCTION

*For high temperature +85°C,

high temperature reﬂow parts

• POWER BACK-UP FOR CMOS DEVICES

• SURFACE MOUNTABLE V-CHIP STYLE

• LEAD-FREE FINISH

see the NEXCW series

CHARACTERISTICS

3.5 & 5.5VDC

0.047F ~ 1.0F (47,000μF ~ 1,000,000μF)

Rated Voltage Range

Rated Capacitance Range

Operating Temp. Range

Capacitance Tolerance

-25°C ~ +70°C

+80%/-20% (Z)

Δ Capacitance Change

Maximum ESR

Less than ±30% of initial measured value

Load Life Test

+70°C 1,000 hours

Less than 200% of the speciﬁed maximum value

Within +80%/-20% of speciﬁed value

Current at 30 minutes

Δ Capacitance Change

Maximum ESR

Temperature Cycling

(5 cycles, -25 ~ +70°C

Less than speciﬁed maximum value

Current at 30 minutes

Δ Capacitance Change

Maximum ESR

Less than speciﬁed maximum value

Less than ±20% of initial measured value

Less than 120% of the speciﬁed maximum value

Humidity Resistance

(240 hours @ 40°C/90% RH)

Current at 30 minutes

Less than 120% of the speciﬁed maximum value

STANDARD VALUES AND SPECIFICATIONS

Capacitance Working

Holding

Voltage

(VDC min.)

Max. Current Max. ESR

@ 30 minutes @ 1KHz

NIC P/N

Value (F)

Discharge

Voltage

(VDC)

(mA)

0.090

0.200

0.420

0.071

0.150

0.330

0.710

1.500

(Ω)

NEXC104Z3.5V10.5X5.5TRF

NEXC224Z3.5V10.5X5.5TRF

NEXC474Z3.5V10.5X8.5TRF

NEXC473Z5.5V10.5X5.5TRF

NEXC104Z5.5V10.5X5.5TRF

NEXC224Z5.5V10.5X8.5TRF

NEXC474Z5.5V16X9.5TRF

NEXC105Z5.5V21X10.5TRF

0.1

0.22

0.47

0.047

0.1

3.5

5.5

5,5

5.5

4.2

0.22

0.47

1.0

CASE DIMENSIONS (mm)

Case Size Dφ ± 0.5 L max. A/B ±0.2

10.5

16.0

21.0

10.5 x 5.5

10.5 x 8.5

16 x 9.5

5.5

8.5

9.5

10.5

10.8

16.3

21.6

3.6 ±0.5

6.8 ±1.0

7.0 ±1.0

1.2

1.4

5.0

10.0

21 x 10.5

Dφ

0.3mm max.

WASHING is NOT RECOMMENDED. Additional precautions can be found at

www.niccomp.com/precautions

If in doubt or uncertainty, please review your speciﬁc application - process details

with NIC’s technical support personnel: tpmg@niccomp.com

NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com

SPECIFICATIONS ARE SUBJECT TO CHANGE

V-Chip Memory Back-Up Capacitors

NEXC Series

LAND PATTERN DIMENSIONS (mm)

COMPONENT OUTLINE

Case

Diameter

5.0

10.0

4.6

10.0

10.5

2.5

3.5

10.5

16.0

21.0

STANDARD RECOMMENDED REFLOW PROFILE

Peak Temperature

(235°C for 10 sec.)

250

200

150

100

Cool Down

Time above 200°C

30 sec. max.

Pre-heat

160°C 120 sec. max.

Time

1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals.

2. 2x reﬂow process maximum. Capacitor should be allowed to return to room temperature before second reﬂow process.

NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com

SPECIFICATIONS ARE SUBJECT TO CHANGE

V-Chip Memory Back-Up Capacitors

NEXC Series

CARRIER TAPE DIMENSIONS (mm)

Case Size

10.5 x 5.5

10.5 x 8.5

16 x 9.5

28.4

40.4

P₁

T₁

T₂

6.0

8.4

10.0

12.0

Quantity/Reel

1,000

500

11.4

18.0

23.0

13.0

20.0

25.0

1.55

1.75

11.5

14.2

20.2

4.0

16.0

24.0

32.0

0.4

0.5

24.0

32.0

44.0

200

150

21 x 10.5

1.5∅ +0.1/-

T₁

1.75 ±

P₁

T₂

Feeding

REEL DIMENSIONS (mm)

Case Size

A ± 2.0

B ± 1.0

C ± 0.5

D ± 0.8

E ± 0.5

10.5 x 5.5

10.5 x 8.5

16 x 9.5

380

330

370

80.0

100.0

13.0

21.0

2.0

25.5

33.5

45.5

3.0

2.8

21 x 10.5

NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com

SPECIFICATIONS ARE SUBJECT TO CHANGE

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