C20T10Q [NIEC]
Schottky Barrier Diode; 肖特基二极管
| 型号： | C20T10Q |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总6页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBD T y p e : C20T10Q
OUTLINE DRAWING
FEATURES
*SQUARE-PAK TO-263AB(SMD)
Packaged in 24mm Tape and Reel
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Approx Net Weight: 1.4g
Rating
Symbol
VRRM
IO
IF(RMS)
IFSM
C20T10Q
100
Unit
V
Repetitive Peak Reverse Voltage
50 Hz Full Sine Wave
Resistive Load
Average Rectified Output Current
RMS Forward Current
20
Tc=120°C
A
A
A
22.2
50Hz Full Sine Wave ,1cycle
Non-repetitive
Surge Forward Current
180
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
-40 to +150
-40 to +150
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Symbol
IRM
Conditions
Min. Typ. Max. Unit
Tj= 25°C, VRM= VRRM
per arm
Tj= 25°C, IFM= 10 A
per arm
-
-
1
mA
V
Peak Forward Voltage
Thermal Resistance
VFM
-
-
-
-
0.88
Rth(j-c) Junction to Case
1.5 °C /W
C_T_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
C20T10Q/C20T10Q-11A (per Arm)
50
20
10
5
Tj=25°C
Tj=150°C
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
C20T10Q/C20T10Q-11A (Total)
20
16
12
8
RECT 180°
SINE WAVE
4
0
0
4
8
12
16
20
24
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
C20T10Q/C20T10Q-11A (per Arm)
50
20
10
5
0
20
40
60
80
100
120
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
C20T10Q/C20T10Q-11A (Total)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
RECT 180°
SINE WAVE
0
20
40
60
80
100
120
REVERSE VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
CONDUCTION ANGLE
VRM=100V
C20T10Q/C20T10Q-11A (Total)
24
20
16
12
8
RECT 180°
SINE WAVE
4
0
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
C20T10Q/C20T10Q-11A
200
160
120
80
40
I
FSM
0.02s
0
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,Vm =20m VRMS,f=100 kHz,Typica l Value
C20T10Q/C20T10Q-11A (per Arm)
500
200
100
50
0.5
1
2
5
10
20
50
100
200
REVERSE VOLTAGE (V)
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