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FSF10A60B [NIEC]

FRD - Low Forward Voltage Drop; FRD - 低正向压降
FSF10A60B
型号: FSF10A60B
厂家: NIHON INTER ELECTRONICS CORPORATION    NIHON INTER ELECTRONICS CORPORATION
描述:

FRD - Low Forward Voltage Drop
FRD - 低正向压降

整流二极管 瞄准线 局域网
文件: 总4页 (文件大小:56K)
中文:  中文翻译
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相关型号:

FSF10B60

Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon,

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NIEC

FSF10B60B

Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon,

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NIEC

FSF10D60

Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon,

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NIEC

FSF1340

Small Signal Field-Effect Transistor, TO-254, 3 PIN

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MICROSEMI

FSF150D

25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSF150D1

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA

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ETC

FSF150D3

Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

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FAIRCHILD

FSF150D3

25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

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RENESAS

FSF150D4

25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

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RENESAS

FSF150R

25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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INTERSIL

FSF150R1

Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

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FAIRCHILD

FSF150R3

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA

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ETC

FSF150R4

25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

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RENESAS

FSF150R4

Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

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FAIRCHILD

FSF1510R

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MICROSEMI

FSF15F60

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, TO-220, 3/2 PIN

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FSF1820

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN

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MICROSEMI

FSF1820E3

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN

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MICROSEMI

FSF2210E3

Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, 3 PIN

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MICROSEMI

FSF250

24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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INTERSIL