IMBG65R057M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性,从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装,基于先进的英飞凌碳化硅沟槽技术,适于大功率应用。 该器件旨在提高系统性能,缩减尺寸,增强可靠性。
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INFINEON
BJM36050
PowerPact B Circuit Breaker, 50A, 3P, 600Y/347V AC, 25kA at 600Y/347 UL EverLink
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