P2H80QH20 [NIEC]
Schottky Barrier Diode; 肖特基二极管
| 型号： | P2H80QH20 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBD MODULE 80A/200V
P2H80QH20
OUTLINE DRAWING
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Extremely Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
See the Next Page
TYPICAL APPLICATIONS
* High Frequency Rectification
Maximum Ratings
Approx Net Weight:35g
Type / Grade
P2H80QH20
Symbol
Unit
V
Parameter
-
-
-
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
VRRM
VRSM
200
-
Max Rated
Value
Parameter
Unit
A
Conditions
50Hz Half Sine Wave condition
Tc=96°C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
Average Rectified Output Current *1
Surge Forward Current *1
IO(AV)
IFSM
80
800
A
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Tjw
Tstg
Viso
-40 to +150
-40 to +125
2500
°C
°C
V
Base Plate to Terminals, AC1min
M4Screw
Terminals
1.5(1.4)
Mounting torque
N•m
M4Screw
with Thermal Compound
Ftor
Case mounting
1.5(1.4)
Electrical • Thermal Characteristics
Symbol
IRM
Test Conditions
Max. Unit
Characteristics
Peak Reverse Current *1
VRM= VRRM, Tj= 25°C
50
µA
Peak Forward Voltage *1
Thermal Resistance *1
*1: Value Per 1Arm
VFM IFM= 80A, Tj=25°C
Rth(j-c) Junction to Case
1.05
0.48
V
°C/W
Base Plate to Heat Sink with Thermal
Compound
Rth(c-f)
0.3
P2H80QH20
OUTLINE DRAWING (Dimensions in mm)
1
3
4
2
相关型号：
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