PD4M440L_1 [NIEC]
30A 450~500V; 30A 450 〜 500V![PD4M440L_1](http://pdffile.icpdf.com/pdf1/p00182/img/icpdf/PD4M4_1023128_icpdf.jpg)
型号: | PD4M440L_1 |
厂家: | ![]() |
描述: | 30A 450~500V |
文件: | 总3页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
PD4M441L
P2H4M441L P2H4M440L
PD4M440L
MOSFET 30A 450~500V
PD4M441L/440L
P2H4M441L/440L
108.0
108.0
質量 Approximate Weight :220g
■最大定格 Maximum Ratings
質量 Approximate Weight :220g
項
目
記 号
耐 圧・クラス Grade
単位
Symbol
Unit
Rating
PD4M441L/P2H4M441L PD4M440L/P2H4M440L
ドレイン・ソース間電圧
450
500
VDSS
VGSS
ID
V
V
Drain-Source Voltage
VGS=0V
ゲート・ソース間電圧
Gate-Source Voltage
±20
Duty=50%
D.C.
ドレイン電流(連続)
Continuous Drain Current
30(Tc=25℃)
21(Tc=25℃)
A
パルスドレイン電流
Pulsed Drain Current
全損失
60(Tc=25℃)
230(Tc=25℃)
-40~+150℃
IDM
PD
A
W
Total Power Dissipation
動作接合温度範囲
℃
Tjw
Operating Junction Temperature Range
保存温度範囲
-40~+125℃
℃
Tstg
Viso
Ftor
Storage Temperature Range
絶縁耐圧
2000
V
RMS Isolation Voltage
端子 - ベース間,AC1 分間 Terminals to Base, AC 1 min .
3.0(本体取付 Module Base to Heat sink)
2.0(ネジ端子部 Bus bar to Main Terminals)
締付トルク
N・m
Mounting Torque
■電気的特性ꢀElectrical Characteristics(@TC=25℃ unless otherw ise noted)
特性値(最大)
M axim um Value
項ꢀꢀꢀ目
Characteristic
記号
Sym bol
条ꢀꢀꢀ件
Condition
単位
Unit
最小 標準 最大
M in. Typ. M ax.
VDS=VDSS, VGS=0V
─
─
─
─
1
4
ドレイン遮断電流
Zero Gate Voltage Drain Current
IDSS
m A
Tj=125℃, VDS=VDSS, VGS=0V
VDS=VGS, ID=1m A
ゲート・ソース間しきい値電圧
Gate-Source Threshold Voltage
VG(S th)
2
3.2
─
4
1
V
μA
m Ω
S
ゲート・ソース間漏れ電流
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
VGS=10V, ID=15A
VDS=15V, ID=15A
─
─
─
─
─
─
─
─
─
─
ドレイン・ソース間オン抵抗(M OSFET部)
Static Drain-Source On-Resistance
rD(S on)
190
27
210
─
─
─
─
─
─
─
─
順伝達コンダクタンス
Forw ard Transconductance
gfg
入力容量
Input Capacitance
Ciss
Coss
Crss
t(d on)
tr
5.2
1.1
0.18
100
60
nF
nF
nF
ns
ns
ns
ns
VGS=0V
VDS=25V
f=1M Hz
出力容量
Output Capacitance
帰還容量
Reverse Transfer Capacitance
ターン・オン遅延時間
Turn-On Delay Tim e
上昇時間
Rise Tim e
VDD=1/2VDSS
ID=15A
VGS=-5V, +10V
RG=7Ω
ターン・オン遅延時間
Turn-Off Delay Tim e
t(d off)
tf
180
50
下降時間
Fall Tim e
■内部ダイオード定格・特性ꢀSource-D rain D iode Ratings and Characteristics(@T
C
=25℃ unless otherw ise noted)
特性値(最大)
M axim um Value
項ꢀꢀꢀ目
Characteristic
記号
Sym bol
条ꢀꢀꢀ件
Condition
単位
最小 標準 最大
Unit
M in. Typ. M ax.
ソース電流(連続)
Continuous Source Current
IS
ISM
VSD
trr
D. C.
─
─
─
─
─
─
─
21
60
2.0
─
─
A
A
パルスソース電流
Pulsed Source Current
ダイオード順電圧
Diode Forw ard Voltage
IS=30A
IS=30A
─
V
逆回復時間
Reverse Recovery Tim e
750
17
ns
μC
-diS/dt=100A /μs
逆回復電荷
Reverse Recovery Charge
Qr
■熱抵抗特性ꢀTherm al Characteristics
特性値(最大)
M axim um Value
項ꢀꢀꢀ目
Characteristic
記号
条ꢀꢀꢀ件
Condition
単位
Unit
最小 標準 最大
M in. Typ. M ax.
Sym bol
Rt(h j-c)
Rt(h c-f)
M OSFET
Diode
─
─
─
─
0.56
0.56
熱抵抗(接合部-ケース間)
Therm al Resistance, Junction to Case
℃/W
接触熱抵抗(ケース-冷却フィン間)
Therm al Resistance, Case to Heatsink
サーマルコンパウンド塗布
M ounting surface flat, sm ooth, and greased
─
─
0.1
─ 317 ─
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2 Vs. Gate-Source Voltage
Fig. 3 Typical Drain-Source On Voltage
Fig. 3 Vs. Junction Temperature
TC=25ı 250 s Pulse Test
TC=25ı 250 s Pulse Test
VGS=10V 250 s Pulse Test
ID=30A
15A
10A
50
40
30
20
10
0
8
6
4
2
0
0.50
0.42
0.34
0.26
0.18
0.10
10V
6V
V
on(V)
ID=30A
S
DS
(A)
D
E
AGEV
T
T
15A
DACURENTI
VGS=5V
4V
V
SRUECNVOL
10A
O
O
I
DRAITN
0
2
4
6
8
10
12
0
4
8
12
16
-40
0
40
80
120
160
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
JUNCTION TEMPERATURE Tj (
)
Fig. 4 Typical Capacitance
Fig. 5 Typical Gate Charge
Fig. 6 Typical Switching Time
Fig. 4 Vs. Drain-Source Voltage
Fig. 5 Vs. Gate-Source Voltage
Fig. 6 Vs. Series Gate impedance
VGS=0V f=1kHz
ID=20A
ID=15A VDD=250V TC=25ı 80 s Pulse Test
12
10
16
5
VDD= 100V
250V
400V
V()
2
1
SG
12
8
)s
8
EGV
A
T
Ciss
6
0.5
ANEC(nF)
toff
ton
ACIT
Coss
Crss
5
4
2
0
USRCEOVL
0.2
0.1
CAP
O
WSHCNGTIMtE(
4
ET
AG
0
0.05
1
2
10
20
50
100
0
40
80
120
160
200
240
2
5
10
20
50
100
)
200
DRAIN TO SOURCE VOLTAGE VDS (V)
TOTAL GATE CHRAGE Qg (nC)
SERIES GATE IMPEDANCE RG (
Fig. 7 Typical Switching Time
Fig. 7 Vs. Drain Current
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8 Characteristics
Fig. 9 Typical Reverse Recovery Characteristics
RG=7 VDD=250V TC=25ı 80 s Pulse Test
250 s Pulse Test
IS=30A
IS=15A Tj=150ı
1000
500
60
50
2000
1000
n(s)
r
A()
S
40
30
20
td(off)
td(on)
200
100
50
A()
trr
R
ITEMt
500
Y
tr
tf
200
100
50
Tj=125ı
Tj=25ı
IR
SWCHNGTIMEt(ns)
OSCURENTI
V
VSUCRENTI
10
0
20
10
M
O
S
1
2
5
10
20
50
0
0.2
0.4
0.6
0.8
1.0
1.2
0
100
200
300
400
500
600
DRAIN CURRENT ID (A)
SOURCE TO DRAIN VOLTAGE VSD (V)
-dis/dt (A/ s)
F
Fig. 10 Maximum Safe Operating Area
Fig. 11 Normalized Transient Thermal impedance(MOSFET)
E
T
TC=25ı Tj=150ıMAX Single Pulse
Operation in this area
is limited by RDS (on)
2
100
5
200
100
50
10 s
2
]
10-1
MIPDANCE
(A)
100 s
20
10
5
D
ht(j-)c
Per Unit Base
Rth(j-c)=0.56ı/ W
1 Shot Pulse
5
/R
2
ht(j-)c
1ms
I
M
[r
10-2
10-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
2
1
DACURENTI
10ms
DC
0.5
-441L -440L
0.2
1
2
5
10 20
50 100 200 5001000
DRAIN TO SOURCE VOLTAGE VDS (V)
302
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00311/img/page/PD4R080N9A_1873223_files/PD4R080N9A_1873223_1.jpg)
PD4R080N9A
Board Connector, 72 Contact(s), 2 Row(s), Female, Right Angle, 0.024 inch Pitch, Solder Terminal, Receptacle
JAE
![](http://pdffile.icpdf.com/pdf2/p00319/img/page/PD4R080N9AE_1912827_files/PD4R080N9AE_1912827_1.jpg)
PD4R080N9AE
Board Connector, 80 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal, LEAD FREE
JAE
©2020 ICPDF网 联系我们和版权申明