PD50F4 [NIEC]
FRD MODULE - 50A/400V/trr:80nsec; FRD模块 - 50A / 400V / TRR ： 80nsec
| 型号： | PD50F4 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | FRD MODULE - 50A/400V/trr:80nsec |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRD MODULE 50A/400V/trr:80nsec
PD50F4
OUTLINE DRAWING
FEATURES
* Isolated Base
* Dual Diode Doubler Circuit
* Ultra Fast Recovery
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Frequency Rectification
Maximum Ratings
Approx Net Weight:105g
PD50F4
Symbol
Unit
Voltage Rating
Repetitive Peak Reverse Voltage
per Arm
Non-Repetitive Peak Reverse Voltage
VRRM
400
440
V
V
VRSM
Electrical Rating
Condition
Rating
50
50Hz Half Sine Wave condition
Average Rectified Output Current
RMS Forward Current
IO
A
A
A
per Arm Tc=100°C
IF(RMS) per Arm
78
50 Hz Half Sine Wave,1cycle
Non-repetitive per Arm
2 msec to 10 msec per Arm
Surge Forward Current
IFSM
800
I Squared t
I2t
Tjw
Tstg
3200
-40 to +150
-40 to +125
2000
A2s
°C
°C
V
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Viso Base Plate to Terminal, AC1min
Case mounting(recommended)
Terminal Screw(recommended)
2.6
1.4
Mounting torque
Ftor
N•m
Electrical • Thermal Characteristics
Symbol
Test Conditions
Max. Unit
Characteristics
Peak Forward Voltage
Peak Reverse Current
VFM
IRM
IFM= 50A, Tj=25°C, per Arm
VRM= VRRM, Tj= 150°C, per Arm
IFM= 10A, -di/dt= 50 A/µs, Ta= 25°C
Per Arm
1.20
10
V
mA
Reverse Recovery Time
trr
80
0.8
0.1
ns
°C/W
nH
Rth(j-c) Junction to Case per Arm
Thermal Resistance
Base Plate to Heat Sink with Thermal
Rth(c-f)
Compound
Anode Terminal to Cathode Terminal
Internal Lead Inductance
Ls
30
Per Element
PD50F4 OUTLINE DRAWING (Dimensions in mm)
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