PDH2008 [NIEC]
THYRISTOR MODULE 200A / 800V; 晶闸管模块200A / 800V
| 型号： | PDH2008 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | THYRISTOR MODULE 200A / 800V |
| 文件： | 总5页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR MODULE
P D T 2 0 0 8 P D H 2 0 0 8
200A / 800V
FEATURES
OUTLINE DRAWING
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Cascaded Circuit
PDT
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* AC phase control
PDH
Maximum Ratings
Approx Net Weight:480g
Grade
PDT/PDH2008
Symbol
Unit
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
VDRM
VDSM
VRRM
VRSM
800
960
800
960
V
V
Max Rated
arameter
Unit
Conditions
Value
50Hz Half Sine Wave condition
Tc=65°C
Average Rectified Output Current *1
RMS On-State Current
Surge Forward Current
IO(AV)
IT(RMS)
IFSM
200
A
A
314
50 Hz Half Sine Wave,1cycle
Non-Repetitive
4000
A
I Squared t
I2t
2msec to 10msec
80000
100
A2s
A/µs
•
VD=2/3VDRM, ITM=2 IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Critical Rate of Turned-On Current
di/dt
Peak Gate Power
Average Gate Power
Peak Gate Current
PGM
PG(AV)
IGM
5
1
2
W
W
A
Peak Gate Voltage
VGM
VRGM
Tjw
Tstg
Viso
10
5
V
V
°C
°C
V
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
-40 to +125
-40 to +125
2000
2.5 to 3.5
9.0 to 10.0
Base Plate to Terminals, AC1min
M6 Screw
Case mounting
Terminals
Mounting torque
Ftor
N•m
M8 Screw
Value per 1 Arm
Electrical • Thermal Characteristics
Maximum Value.
Min. Typ. Max.
Characteristics
Peak Off-State Current
Peak Reverse Current
Peak On-State Voltage
Symbol
Test Conditions
Unit
IDM
IRM
VTM
VDM= VDRM, Tj=125°C
VRM= VRRM, Tj= 125°C
ITM= 600A, Tj=25°C
30
30
1.34
mA
mA
V
Tj=-40°C
300
Gate Current to Trigger
Gate Voltage to Trigger
IGT
VD=6V,IT=1A
mA
V
Tj=25°C
Tj=125°C
Tj=-40°C
Tj=25°C
Tj=125°C
150
80
5
3
VGT VD=6V,IT=1A
2
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
0.25
V
500
V/µs
Turn-Off Time
tq
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
Tj=25°C, ITM=IT(RMS)
VD=2/3VDRM, IG=300mA
diG/dt=0.2A/µs
100
µs
Turn-On Time
Delay Time
Rise Time
tgt
td
tr
6
2
4
µs
µs
µs
Latching Current
Holding Current
IL
IH
Tj=25°C
Tj=25°C
100
60
0.23
mA
Rth(j-c) Junction to Case
Base Plate to Heat Sink
Thermal Resistance *1
°C/W
Rth(c-f)
0.1
with Thermal Compound
Value Per 1Arm
*1: Value Per Module
PDT/PDH2008 OUTLINE DRAWING (Dimensions in mm)
PDT
PDH
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