PDH4008 [NIEC]
THYRISTOR MODULE; 晶闸管模块
| 型号： | PDH4008 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | THYRISTOR MODULE |
| 文件： | 总5页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR MODULE
P DT400 8
400A/800V
OUTLINE DRAWING
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
PDT
PDH
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Approx Net Weight:1350g
Grade
Symbol
Unit
Parameter
PDT/PDH4008
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
VDRM
VDSM
VRRM
VRSM
800
900
800
900
V
V
Max Rated
Value
Parameter
Unit
Conditions
50Hz Half Sine Wave condition
Average Rectified Output Current
RMS On-State Current
Surge On-State Current
I Squared t
IO(AV)
IT(RMS)
ITSM
400
630
7500
281000
100
A
A
A
Tc=63°C
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2
2
I t
2msec to 10msec
A s
•
VD=2/3VDRM, ITM=2 IO, Tj=125°C
Critical Rate of Turned-On Current
di/dt
A/µs
IG=300mA, diG/dt=0.2A/µs
Peak Gate Power
PGM
PG(AV)
IGM
5
W
W
A
Average Gate Power
1
2
Peak Gate Current
Peak Gate Voltage
VGM
VRGM
Tjw
10
V
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
5
V
-40 to +125
-40 to +125
2000
°C
°C
V
Tstg
Viso
Base Plate to Terminals, AC1min
M6 Screw
Case mounting
2.4 to 3.5
9.0 to 10.0
Mounting torque
Ftor
N•m
Terminals
M8 Screw
Value per 1 Arm
Electrical • Thermal Characteristics
Maximum Value.
Characteristics
Symbol
Test Conditions
Unit
Min. Typ. Max.
Peak Off-State Current
IDM
IRM
VTM
50
mA
mA
V
VDM= VDRM, Tj= 125°C
VRM= VRRM, Tj= 125°C
ITM= 1300A, Tj=25°C
Peak Reverse Current
Peak Forward Voltage
50
1.35
Tj=-40°C
300
Gate Current to Trigger
IGT
VD=6V,IT=1A
mA
Tj=25°C
Tj=125°C
Tj=-40°C
Tj=25°C
Tj=125°C
150
80
5
Gate Voltage to Trigger
VGT VD=6V,IT=1A
V
3
2
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
0.25
V
500
V/µs
Turn-Off Time
tq
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
100
µs
Turn-On Time
Delay Time
tgt
td
tr
6
2
µs
µs
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Rise Time
4
µs
Latching Current
Holding Current
IL
Tj=25°C
Tj=25°C
150
60
0.12
mA
IH
Rth(j-c) Junction to Case
Rth(c-f)
Thermal Resistance
Value Per 1Arm
°C/W
Base Plate to Heat Sink
0.05
with Thermal Compound
PDT/PDH4008 OUTLINE DRAWING (Dimensions in mm)
PDT
PDH
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