PRHMB200A6 [NIEC]

200A 600V; 200A 600V
PRHMB200A6
型号: PRHMB200A6
厂家: NIHON INTER ELECTRONICS CORPORATION    NIHON INTER ELECTRONICS CORPORATION
描述:

200A 600V
200A 600V

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
文件: 总3页 (文件大小:113K)
中文:  中文翻译
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IGBT Module-  
200 ,600V  
PRHMB200A6  
Chopper  
回 路 図 CIRCUIT  
□ 外 形 寸 法 図 OUTLINE DRAWING  
Dimension:[mm]  
□ 最 大 定 格 MAXIMUM RATINGS (T=25℃)  
Item Symbol  
重量:320g  
Rated Value  
Unit  
コレクタ・エミッタ間電圧  
CES  
GES  
600  
±20  
Collector-Emitter Voltage  
ゲ ー ト・エ ミ ッ タ 間 電 圧  
Gate-Emitter Voltage  
DC  
C  
200  
400  
コ レ ク タ 電 流  
Collector Current  
1ms  
CP  
コ レ ク タ 損 失  
C  
j  
780  
Collector Power Dissipation  
-40~+150  
-40~+125  
2,500  
Junction Temperature Range  
stg  
ISO  
tor  
Storage Temperature Range  
圧(Terminal to Base AC,1minute)  
(RMS)  
Isolation Voltage  
Module Base to Heatsink  
Busbar to Main Terminal  
3(30.6)  
2(20.4)  
締 め 付 け ト ル ク  
Mounting Torque  
N・m  
(kgf・cm)  
□ 電 気 的 特 性 ELECTRICAL CHARACTERISTICS (T=25℃)  
Characteristic  
コ レ ク タ 遮 断 電 流  
Symbol  
CES  
Test Condition  
Min.  
Typ.  
Max. Unit  
CE= 600V,VGE= 0V  
GE= ±20V,VCE= 0V  
=200A,VGE= 15V  
CE= 5V,I=200mA  
2.0  
1.0  
2.6  
8.0  
mA  
μA  
Collector-Emitter Cut-Off Current  
ゲ ー ト 漏 れ 電 流  
GES  
CE(sat)  
GE(th)  
ies  
2.1  
Gate-Emitter Leakage Current  
コレクタ・エミッタ間飽和電圧  
Collector-Emitter Saturation Voltage  
ゲ ー ト し き い 値 電 圧  
4.0  
Gate-Emitter Threshold Voltage  
CE= 10V,VGE= 0V,  
f=1MHZ  
20,000  
pF  
Input Capacitance  
上 昇 時 間 Rise  
ターンオン時間 Turn-on Time  
下 降 時 間 Fall Time  
ターンオフ時間 Turn-off Time  
Time  
r  
on  
f  
0.15  
0.25  
0.20  
0.45  
0.30  
0.40  
0.35  
0.70  
CC= 300V  
= 3Ω  
スイッチング時間  
Switching Time  
μs  
= 3.6Ω  
GE= ±15V  
off  
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)  
Item  
Symbol  
Rated Value  
Unit  
DC  
F  
FM  
200  
400  
Forward Current  
1ms  
Characteristic  
Symbol  
F  
Test Condition  
Min.  
Typ.  
1.9  
Max. Unit  
=200A,VGE= 0V  
2.4  
Peak Forward Voltage  
逆 回 復 時 間  
=200A,VGE= -10V  
di/dt=200A/μs  
rr  
0.15  
0.25  
μs  
Reverse Recovery Time  
□ 熱 的 特 性 : THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Rth(j-c)  
Test Condition  
Junction to Case  
Min.  
Typ.  
Max. Unit  
IGBT  
Diode  
0.16  
℃/W  
0.38  
Thermal Impedance  
PRHMB200A6  
Fig.2- Collector to Emitter On Voltage  
vs. Gate to Emitter Voltage (Typical)  
Fig.1- Output Characteristics (Typical)  
TC=25  
TC=25  
16  
14  
12  
10  
8
400  
300  
200  
100  
0
VGE=20V  
12V  
15V  
400A  
IC=80A  
200A  
10V  
EC  
eV  
C
I
g
a
t
l
o
V
r
ent  
r
r
u
e
t
9V  
C
r
t
i
o
m
6
E
o
ect  
l
l
t
r
Co  
o
4
cet  
l
l
8V  
7V  
2
oC  
0
0
2
4
6
8
10  
0
4
8
12  
16  
20  
Gate to Emitter Voltage VGE (V)  
Collector to Emitter Voltage VCE (V)  
Fig.3- Collector to Emitter On Voltage  
vs. Gate to Emitter Voltage (Typical)  
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)  
TC=125℃  
400  
350  
300  
250  
200  
150  
100  
50  
16  
16  
14  
12  
10  
8
RL=1.5Ω  
TC=25℃  
IC=80A  
200A  
400A  
14  
12  
10  
8
G
a
te  
CE  
EC  
t
o
V
V
e
E
e
g
a
m
t
l
ga  
i
t
t
o
te  
o
r
V
rV  
V
r
e
t
o
te  
i
l
t
t
VCE=300V  
a
g
e
m
m
6
6
E
E
o
t
V
o
t
200V  
100V  
GE  
r
r
to  
o
t
4
4
c
e
l
l
elc  
o
C
o
C
2
2
0
0
0
0
4
8
12  
16  
20  
0
150  
300  
450  
600  
750  
900  
Gate to Emitter Voltage VGE (V)  
Total Gate Charge Qg (nC)  
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)  
Fig.6- Collector Current vs. Switching Time (Typical)  
100000  
50000  
1
VGE=0V  
f=1MHZ  
TC=25  
VCC=300V  
RG=3.6Ω  
VGE=±15V  
TC=25℃  
0.9  
Cies  
Coes  
Cres  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
20000  
10000  
t
e
5000  
C
e
m
i
c
toff  
T
a
t
2000  
1000  
500  
gn  
ci  
hci  
pa  
t
i
Ca  
ton  
wS  
tf  
200  
100  
tr  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
0
50  
100  
150  
200  
Collector to Emitter Voltage VCE (V)  
Collector Current IC (A)  
PRHMB200A6  
Fig.8- Forward Characteristics of Free Wheeling Diode  
(Typical)  
Fig.7- Series Gate Impedance vs. Switching Time (Typical)  
5
400  
350  
300  
250  
200  
150  
100  
50  
VCC=300V  
IC=200A  
VG=±15V  
TC=25℃  
TC=25  
TC=125℃  
toff  
ton  
2
1
tr  
F
I
t
e
net  
m
i
r
r
0.5  
u
tf  
T
g
C
n
d
r
a
chi  
t
i
w
r
0.2  
0.1  
w
S
o
F
0.05  
0
1
10  
100  
0
1
2
3
4
Forward Voltage VF (V)  
Series Gate Impedance RG (Ω)  
Fig.10- Reverse Bias Safe Operating Area (Typical)  
Fig.9- Reverse Recovery Characteristics (Typical)  
1000  
500  
500  
RG=3.6Ω  
VGE=±15V  
TC125℃  
IF=200A  
TC=25℃  
200  
100  
50  
M
200  
100  
50  
Rr  
trr  
I
r
r
ent  
t
e
r
r
C
I
u
m
i
20  
10  
5
C
y
r
ent  
T
r
y
r
e
v
ve  
uCr  
o
c
e
r
o
eco  
t
R
e
R
e
l
l
2
1
s
r
20  
10  
5
s
r
e
v
e
IRrM  
oC  
ve  
e
R
0.5  
R
k
a
e
0.2  
0.1  
P
0
200  
400  
600  
800  
0
200  
400  
600  
800  
1000  
1200  
Collector to Emitter Voltage V CE (V)  
-di/dt (A/μs)  
Fig.11- Transient Thermal Impedance  
5x10 -1  
FRD  
2x10 -1  
1x10 -1  
5x10 -2  
IGBT  
h
t
R
cne  
2x10 -2  
1x10 -2  
5x10 -3  
ad  
e
p
m
l
a
m
ehr  
T
TC=25  
2x10 -3  
1x10 -3  
net  
i
s
n
1 Shot Pulse  
a
r
T
10-5  
10-4  
10-3  
10-2  
10-1  
1
101  
Time t (s)  

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