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PRHMB300A6 [NIEC]

IGBT MODULE Chopper 300A 600V; IGBT模块斩波300A 600V
PRHMB300A6
型号： PRHMB300A6
厂家： NIHON INTER ELECTRONICS CORPORATION    NIHON INTER ELECTRONICS CORPORATION
描述：

IGBT MODULE Chopper 300A 600V
IGBT模块斩波300A 600V

双极性晶体管
文件： 总3页 (文件大小：114K)
中文：  中文翻译
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IGBT MODULE Chopper 300A 600V  
PRHMB300A6  
CIRCUIT  
OUTLINEDRAWING  
2- fasten- tab No 110  
Dimension(mm)  
Approximate Weight : 430g  
MAXMUM RATINGS (Tc=25°C)  
Item  
Collector-Emitter Voltage  
Gate - Emitter Voltage  
DC  
Collector Current  
1 ms  
Symbol  
VCES  
VGES  
IC  
PRHMB300A6  
Unit  
V
V
600  
+/ - 20  
300  
600  
A
IC  
Collector Power Dissipation  
Junction Temperature Range  
Storage Temperature Range  
Isolation Voltage Terminal to Base AC, 1 min.)  
PC  
1040  
W
°C  
°C  
V
T
-40 to +150  
-40 to +125  
2500  
j
Tstg  
VISO  
Module Base to Heat sink  
Bus Bar to Main Terminals  
Mounting Torque  
FTOR  
3.06  
N•m  
ELECTRICAL CHARACTERISTICS (Tc=25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
Collector-Emitter Cut-Off Current  
Gate-Emitter Leakage Current  
Collector-Emitter Saturation Voltage  
Gate-Emitter Threshold Voltage  
Input Capacitance  
ICES  
IGES  
VCE(sat)  
VGE(th)  
C ies  
ｔ
r
ｔ
on  
ｔ
f
ｔ
off  
VCE=600V,VGE=0V  
VGE=+/- 20V,VCE=0V  
IC=300A,VGE=15V  
VCE=5V,IC=300mA  
-
-
-
4.0  
-
－
－
－
－
-
-
2.1  
-
30000  
0.2  
0.4  
0.2  
0.6  
3.0  
1.0  
2.6  
8.0  
-
mA  
µA  
V
V
pF  
VCE=10V,VGE=0V,f=1MHz  
Rise Time  
0.4  
0.75  
0.35  
0.8  
VCC= 300V  
RL= 1 ohm  
RG= 2.0 ohm  
VGE= +/- 15V  
Turn-on Time  
Switching Time  
µs  
Fall Time  
Turn-off Time  
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)  
Item  
Symbol  
IF  
IFM  
Rated Value  
Unit  
A
DC  
1 ms  
300  
600  
Forward Current  
Characteristic  
Symbol  
VF  
Test Condition  
Min.  
Typ.  
Max.  
2.4  
Unit  
V
Peak Forward Voltage  
IF=300A,VGE=0V  
-
1.9  
Reverse Recovery Time  
trr  
-
0.15  
0.25  
IF=300A,VGE=-10V,di/dt=300A/µs  
µs  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Test Condition  
Junction to Case  
Min.  
-
-
Typ.  
-
-
Max.  
0.12  
0.24  
Unit  
IGBT  
DIODE  
Thermal Impedance  
R
th(j-c)  
°C/W  
IGBTMODULE Chopper 300A 600V  
PRHMB300A6  
Fig.2- Collector to Emitter On Voltage  
vs. Gate to Emitter Voltage (Typical)  
Fig.1- Output Characteristics (Typical)  
TC=25℃  
TC=25℃  
16  
14  
12  
10  
8
600  
500  
400  
300  
200  
100  
0
VGE=20V  
12V  
15V  
IC=150A  
300A  
600A  
10V  
EC  
eV  
C
I
g
a
t
l
o
ent  
r
V
r
e
t
9V  
Cur  
t
i
r
o
m
E
6
ect  
l
l
o
t
r
Co  
o
4
cet  
l
l
8V  
7V  
2
oC  
0
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Gate to Emitter Voltage VGE (V)  
Collector to Emitter Voltage VCE (V)  
Fig.3- Collector to Emitter On Voltage  
vs. Gate to Emitter Voltage (Typical)  
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)  
TC=125℃  
400  
350  
300  
250  
200  
150  
100  
50  
16  
16  
14  
12  
10  
8
RL=1Ω  
TC=25℃  
IC=150A  
300A  
600A  
14  
12  
10  
8
G
a
te  
EC  
CE  
t
o
V
e
E
eV  
m
g
a
ga  
i
t
t
l
t
te  
o
o
V
r
r
V
V
r
e
t
o
e
t
l
t
t
i
t
a
g
e
VCE=300V  
m
m
6
6
E
E
o
V
o
t
GE  
t
r
200V  
100V  
r
o
t
o
4
4
ect  
l
l
elc  
o
C
2
2
Co  
0
0
0
0
4
8
12  
16  
20  
0
150  
300  
450  
600  
750  
900  
1050  
1200  
1350  
Gate to Emitter Voltage VGE (V)  
Total Gate Charge Qg (nC)  
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)  
Fig.6- Collector Current vs. Switching Time (Typical)  
200000  
100000  
50000  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VGE=0V  
f=1MHZ  
TC=25℃  
VCC=300V  
RG=2.0Ω  
VGE=±15V  
TC=25℃  
Cies  
Coes  
Cres  
20000  
10000  
toff  
t
e
m
i
nceC  
5000  
T
a
t
ton  
gn  
ci  
hci  
pa  
t
i
2000  
1000  
500  
a
C
wS  
tf  
tr  
200  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
0
50  
100  
150  
200  
Collector to Emitter Voltage VCE (V)  
Collector Current IC (A)  
IGBTMODULE Chopper 300A 600V  
PRHMB300A6  
Fig.8- Forward Characteristics of Free Wheeling Diode  
(Typical)  
Fig.7- Series Gate Impedance vs. Switching Time (Typical)  
5
600  
500  
400  
300  
200  
100  
0
VCC=300V  
IC=300A  
VG=±15V  
TC=25℃  
TC=25℃  
TC=125℃  
2
1
toff  
ton  
F
I
t
t
e
tr  
m
i
ern  
0.5  
u
T
C
ng  
d
r
a
chi  
tf  
t
i
w
0.2  
0.1  
o
Sw  
F
0.05  
0.5  
1
2
5
10  
20  
50  
0
1
2
3
4
Series Gate Impedance RG (Ω)  
Forward Voltage VF (V)  
Fig.9- Reverse Recovery Characteristics (Typical)  
Fig.10- Reverse Bias Safe Operating Area (Typical)  
500  
1000  
500  
IF=300A  
TC=25℃  
RG=2.0Ω  
VGE=±15V  
TC≦125℃  
200  
100  
50  
M
200  
100  
50  
Rr  
trr  
I
t
n
r
r
e
C
t
e
r
u
I
t
m
i
20  
10  
5
C
T
y
ren  
e
v
o
c
e
u
ry  
e
v
rC  
o
c
ot  
e
R
R
e
c
e
l
l
IRrM  
2
1
20  
10  
5
e
o
C
rs  
e
v
e
rs  
e
v
e
0.5  
R
k
R
0.2  
0.1  
Pea  
0
400  
800  
1200  
1600  
2000  
2400  
0
200  
400  
600  
800  
-di/dt (A/μs)  
Collector to Emitter Voltage V CE (V)  
Fig.11- Transient Thermal Impedance  
5x10 -1  
FRD  
2x10 -1  
1x10 -1  
5x10 -2  
IGBT  
h
t
R
e
c
n
2x10 -2  
1x10 -2  
5x10 -3  
peda  
m
I
l
a
m
her  
T
TC=25℃  
2x10 -3  
1x10 -3  
ent  
i
s
n
1 Shot Pulse  
a
r
T
10-5  
10-4  
10-3  
10-2  
10-1  
1
101  
Time t (s)  

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