TCH30B10 [NIEC]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon,;
| 型号： | TCH30B10 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, 二极管 |
| 文件： | 总1页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30A Avg.
100 Volts
SBD
TCH30B10
■最大定格ꢀMaximum Ratings
■
OUTLINE DRAWING(mm)
Item
Symbol
VRRM
IO
Conditions
100
Unit
V
く
り
返
し
ピ
ー
ク
逆
電
圧
流
流
流
Repetitive Peak Reverse Voltage
平
均
整
流
電
50Hz、正弦全波抵抗負荷
Tc＝97℃
30
A
Average Rectified Forward Current
50Hz Full Sine Wave Resistive Load
実
効
順
電
IF(RMS)
IFSM
33.3
A
R.M.S. Forward Current
サ
ー
ジ
順
電
50Hz正弦全波，１サイクル，非くり返し
50Hz Full Sine Wave,1cycle, Non-repetitive
A
150
Surge Forward Current
動
作
接
合
温
範 囲
Tjw
－40～＋150
℃
Operating Junction Temperature Range
保
存
温
範 囲
Tstg
－40～＋150
℃
Storage Temperature Range
■APPROX. NET WEIGHT:1.4 g
■電気的・熱的特性ꢀElectrical/Thermal Characteristics
Item
Symbol
IRM
Conditions
Min.
－
Typ. Max. Unit
ピ
ー
ク
逆
電
電
流
圧
抗
一素子あたりꢀ
,
Per Diode
－
－
－
1
mA
V
Tj＝25℃, VRM＝VRRM
Peak Reverse Current
ピ
ー
ク
順
Tj＝25℃, IFM＝15A, 一素子あたりꢀ
VFM
－
0.96
1.5
Peak Forward Voltage
Per Diode
熱
抵
接 合 部 ･ ケ ー ス 間
Junction to Case
Rth(j-c)
－
℃/W
Thermal Resistance
■定格・特性曲線
FIG.1
FIG.4
FIG.7
FIG.2
FIG.3
FIG.5
FIG.6
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