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2N1653 [NJSEMI]

DAP transistors are de-signed for efficient high current switching at high frequencies; DAP晶体管去签订有效的高电流开关在高频率
2N1653
型号: 2N1653
厂家: NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.    NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述:

DAP transistors are de-signed for efficient high current switching at high frequencies
DAP晶体管去签订有效的高电流开关在高频率

晶体 开关 晶体管
文件: 总1页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N1654

TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5

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ETC

2N1655

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5

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ETC

2N1656

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5

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ETC

2N166

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 20MA I(C) | CAN

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2N167

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 75MA I(C) | TO-22VAR

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2N1671

UNIJUNCTION TRANSISTOR

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2N1671

PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS

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COMSET

2N1671

intended for general purpose industrial applications where circuit economy is of primary importance

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2N1671A

PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS

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2N1671A

intended for general purpose industrial applications where circuit economy is of primary importance

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2N1671B

PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS

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2N1671B

intended for general purpose industrial applications where circuit economy is of primary importance

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2N1671C

intended for general purpose industrial applications where circuit economy is of primary importance

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2N1672

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-5

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2N1676

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2N1677

TRANSISTOR | BJT | PNP | 4.5V V(BR)CEO | 50MA I(C) | TO-5

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2N1678

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-9

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2N1679

TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 1A I(C) | TO-39

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2N167A

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2N1686

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ETC