2N6802 [NJSEMI]
POWER MOS FIELD-EFFECT TRANSISTORS; 功率MOS场效应晶体管
| 型号： | 2N6802 |
| 厂家： | 
NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC. |
| 描述： | POWER MOS FIELD-EFFECT TRANSISTORS |
| 文件： | 总1页 (文件大小：179K) |
| 下载： | 下载PDF数据表文档文件 |
2N6802U
N-CHANNEL MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
MICROSEMI
2N6804
P-CHANNEL MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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307
MICROSEMI
2N6804
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA packageWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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482
ETC
2N6804_12
This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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77
MAS
2N6804E3
Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
MICROSEMI
2N6804PBF
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
IRF
2N6804SCC5206/004
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
2N6804SCC5206/004PBF
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
IRF
2N6806
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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44
ETC
2N6806SCC5206/004
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
2N6806SCC5206/004PBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
2N681
25 and 35 Amp RMS SCRsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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37
KNOX
2N681
25 and 35 Amp RMS SCRsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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63
IRF
2N681
25 AND 35 AMP RMS SCRSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
IRF
2N681
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
CENTRAL
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