SM5010BN4S [NPC]
Crystal Oscillator Module ICs; 晶体振荡器模块集成电路
| 型号： | SM5010BN4S |
| 厂家： | 
NIPPON PRECISION CIRCUITS INC |
| 描述： | Crystal Oscillator Module ICs |
| 文件： | 总14页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5010 series
Crystal Oscillator Module ICs
NIPPON PRECISION CIRCUITS INC.
OVERVIEW
The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits.
High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to
make a stable fundamental-harmonic oscillator.
FEATURES
ꢀ Inverter amplifier feedback resistor built-in
ꢀ Output three-state function
ꢀ Capacitors C , C built-in
ꢀ Standby function
ꢀ 2.7 to 5.5 V supply voltage
ꢀ Oscillator frequency output (f , f /2, f /4, f /8
G
D
O
O
O
O
ꢀ Power-save pull-up resistor built-in (5010CL×)
determined by internal connection)
ꢀ 8-pin SOP (SM5010×××S)
ꢀ Chip form (CF5010×××)
ꢀ 16 mA (V = 4.5 V) drive capability
DD
(5010AN×, AK×, BN×, BK×, CL×, DN×)
ꢀ 4 mA (V = 4.5 V) drive capability
DD
(5010AH×, BH×)
SERIES CONFIGURATION
Built-in
capacitance
3V operating
5V operating
Input
level
(5V)
Output
frequency
R
Output
duty level
Standby
function
1
D
]
Output
load
(max)
[pF]
Output
load
(max)
[pF]
Vers ion
Re c omme nde d
operating
Re c omme nde d
operating
Output
current
[mA]
[Ω
C
[pF]
C
D
[pF]
G
frequency
frequency
range [MHz]
range [MHz]
SM5010AN1S
SM5010AN2S
SM5010AN3S
SM5010AN4S
SM5010AK1S
SM5010AH1S
SM5010AH2S
SM5010AH3S
SM5010AH4S
SM5010BN1S
SM5010BN2S
SM5010BN3S
SM5010BN4S
SM5010BK1S
SM5010BH1S
SM5010BH2S
SM5010BH3S
SM5010BH4S
SM5010CL1S
SM5010CL2S
SM5010CL3S
SM5010CL4S
SM5010DN1S
f
15
15
15
15
–
30
30
30
30
–
50
50
50
50
15
15
15
15
15
50
50
50
50
15
15
15
15
15
50
50
50
50
50
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
16
16
16
16
16
4
–
TTL
CMOS
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
Yes
Yes
Yes
Yes
No
O
f
/2
/4
/8
–
–
–
–
–
–
–
–
TTL CMOS/TTL
TTL CMOS/TTL
TTL CMOS/TTL
O
f
O
f
O
f
TTL
TTL
TTL
TTL
TTL
TTL
TTL
O
f
15
15
15
15
15
15
15
15
–
16
16
16
16
30
30
30
30
–
CMOS
CMOS
CMOS
CMOS
CMOS
O
f
/2
/4
/8
4
O
f
4
O
f
4
O
f
16
16
16
16
16
4
820
820
820
820
820
820
820
820
820
–
O
f
/2
/4
/8
TTL CMOS/TTL
TTL CMOS/TTL
TTL CMOS/TTL
O
f
TBD
O
f
O
f
TTL
TTL
TTL
O
f
15
15
15
15
15
15
15
15
15
16
16
16
16
30
30
30
30
30
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
O
f
/2
/4
/8
4
TTL
O
f
4
TTL
O
f
4
TTL
O
f
16
16
16
16
16
CMOS
CMOS
CMOS
CMOS
TTL
O
f
/2
/4
/8
–
O
f
–
O
f
–
O
f
820
O
1. Chip form devices have designation CF5010×××
.
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.
NIPPON PRECISION CIRCUITS—1
SM5010 s eries
ORDERING INFORMATION
De vice
Packag e
SM5010×××
S
8-pin SOP
Chip form
CF5010×××–1
PACKAGE DIMENSIONS
(Unit:mm)
• 8-pin SOP
0.695typ
5.2 0.3
1.27
0 to 10
0.10
0.4 0.1
M
0.12
NIPPON PRECISION CIRCUITS—2
SM5010 s eries
PAD LAYOUT
PINOUT
(Unit:µm)
(Top view)
Q
VDD
(920,1180)
H A 5 0 1 0
VDD
1
2
3
4
8
7
6
5
INH
Y
XT
NC
NC
Q
XT
(0,0)
INH XT XT VSS
X
VSS
Chip size: 0.92
Chip thickness: 300 ± 30 µm
Chip base: V level
× 1.18 mm
DD
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimens ions [µm]
Nu mb e r
Na me
I/O
Des cription
X
Y
Output state control input. High impedance when LOW. In the case of the
5010CL , the oscillator stops and Power-saving pull-up resistor built in.
1
INH
I
195
174.4
×
2
3
4
5
6
7
8
XT
XT
I
O
–
Amplifier input.
Amplifier output.
Ground
385
575
765
757.6
–
174.4
174.4
174.4
1017.6
–
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
VS S
Q
O
–
Output. Output frequency (f , f /2, f /4, f /8) determined by internal connection
O O O O
NC
NC
VDD
No connection
No connection
Supply voltage
–
–
–
–
165.4
1014.6
BLOCK DIAGRAM
VDD VSS
XT
CG
CD
RD
Rf
1/2 1/2 1/2
XT
Q
INH
NIPPON PRECISION CIRCUITS—3
SM5010 s eries
SPECIFICATIONS
Absolute Maximum Ratings
V
= 0 V
SS
Parameter
Symbol
Condition
Rating
Unit
V
Supply voltage range
Input voltage range
V
−
0.5 to 7.0
DD
V
−
−
0.5 to V
0.5 to V
+ 0.5
+ 0.5
V
IN
DD
DD
Output voltage range
Operating temperature range
V
V
OUT
T
−
40 to 85
°
°
C
opr
Chip form
8-pin SOP
−
−
65 to 150
55 to 125
10
Storage temperature range
Output current
T
C
stg
5010
5010
×
×
H
N
×
×
I
mA
OUT
,
×
K ×
, CL×
25
Power dissipation
Soldering temperature
Soldering time
P
T
8-pin SOP
8-pin SOP
8-pin SOP
500
m W
D
255
°C
sld
t
10
s
sld
Recommended Operating Conditions
3V operation
V
= 0 V
SS
Rating
Parameter
Symbol
Series
Condition
Unit
min
2.7
2.7
2.7
typ
–
ma x
3.6
×
×
N
H
×
×
×
×
×
×
×
×
×
2
2
2
2
2
2
2
2
2
≤
≤
≤
≤
≤
≤
≤
≤
≤
f
f
f
f
f
f
f
f
f
≤
≤
≤
≤
≤
≤
≤
≤
≤
30 MHz, C
≤
≤
≤
≤
≤
≤
≤
≤
≤
15 pF
L
L
L
L
L
L
L
L
L
Supply voltage
Input voltage
V
16 MHz, C
30 MHz, C
30 MHz, C
16 MHz, C
30 MHz, C
30 MHz, C
16 MHz, C
30 MHz, C
15 pF
15 pF
15 pF
15 pF
15 pF
15 pF
15 pF
15 pF
–
3.6
V
DD
CL
–
3.6
×
×
N
H
V
–
V
S S
DD
V
V
–
V
V
IN
S S
DD
CL
V
–
V
S S
DD
×
×
N
H
−
−
−
10
10
20
–
+
+
+
70
70
80
Operating temperature
T
–
°C
OP R
CL
–
5V operation
V
= 0 V
SS
Rating
Parameter
Symbol
Series
Condition
Unit
min
4.5
4.5
4.5
4.5
typ
–
ma x
5.5
5.5
5.5
5.5
×N
×K
×H
×
×
×
×
×
×
×
×
×
×
×
×
2
2
2
2
2
2
2
2
2
2
2
2
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
f
f
f
f
f
f
f
f
f
f
f
f
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
30 MHz, C
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
50 pF
L
L
L
L
L
L
L
L
L
L
L
L
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
30 MHz, C
15 pF
15 pF
50 pF
50 pF
15 pF
15 pF
50 pF
50 pF
15 pF
15 pF
50 pF
–
Supply voltage
V
V
DD
–
CL
–
×N
×K
×H
V
–
V
S S
DD
V
–
V
S S
DD
Input voltage
V
V
IN
V
–
V
S S
DD
CL
V
–
V
S S
DD
×N
×K
×H
−
−
−
−
40
40
40
40
–
+
+
+
+
85
85
85
85
–
Operating temperature
T
°C
OP R
–
CL
–
NIPPON PRECISION CIRCUITS—4
SM5010 s eries
Electrical Characteristics
5010×N× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −10 to 70 °C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 2.7 V, I = 8 mA
Unit
min
2.1
–
typ
2.4
0.3
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7 V, I = 8 mA
0.4
10
10
–
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V = V
–
–
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
2.0
–
–
V
V
IH
V
–
0.5
IL
5010
5010
5010
5010
×
×
×
×
N1
N2
N3
N4
Measurement cct 3, load cct 1,
Current consumption
I
mA
TBD
DD
INH = open, C = 15 pF, f = 30 MHz
L
INH pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
–
–
100
200
–
–
k
k
Ω
Ω
UP 1
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
–
820
–
Ω
D
C
pF
pF
G
D
Design value, determined by the internal
wafer pattern
Built-in capacitance
5010A××, 5010B××
TBD
C
5010×N×, ×K× series
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 4.5 V, I = 16 mA
Unit
min
3.9
–
typ
4.2
0.3
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5 V, I = 16 mA
0.4
10
10
–
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V = V
–
–
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
2.0
–
–
V
V
IH
V
–
0.8
IL
5010
5010
5010
5010
×
×
×
×
N1
N2
N3
N4
Measurement cct 3, load cct 2,
INH = open, C = 50 pF, f = 30 MHz
L
Current consumption
I
mA
TBD
DD
Measurement cct 3, load cct 1,
5010
×
K ×
INH = open, C = 15 pF, f = 30 MHz
L
INH pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
–
–
100
200
–
–
k
k
Ω
Ω
UP 1
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
–
820
–
Ω
D
C
pF
pF
G
D
Design value, determined by the internal
wafer pattern
Built-in capacitance
5010A××, 5010B××
TBD
C
NIPPON PRECISION CIRCUITS—5
SM5010 s eries
5010×H× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −10 to 70 °C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.1
–
typ
2.4
0.3
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 2.7 V, I = 2 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7 V, I = 2 mA
0.5
10
10
–
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V = V
–
–
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
2.0
–
–
V
V
IH
V
–
0.5
IL
5010
5010
5010
5010
×
×
×
×
H1
H2
H3
H4
Measurement cct 3, load cct 2,
Current consumption
I
mA
TBD
DD
INH = open, C = 15 pF, f = 16 MHz
L
INH pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
–
–
100
200
–
–
k
k
Ω
Ω
UP 1
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
–
820
–
Ω
D
C
pF
pF
G
D
Design value, determined by the internal
wafer pattern
Built-in capacitance
5010A××, 5010B××
TBD
C
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 4.5 V, I = 4 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5 V, I = 4 mA
0.5
10
10
–
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V = V
–
–
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
2.0
–
–
V
V
IH
V
–
0.8
IL
5010
5010
5010
5010
×
×
×
×
H1
H2
H3
H4
Measurement cct 3, load cct 2,
Current consumption
I
mA
TBD
DD
INH = open, C = 15 pF, f = 30 MHz
L
INH pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
–
–
100
200
–
–
k
k
Ω
Ω
UP 1
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
–
820
–
Ω
D
C
pF
pF
G
D
Design value, determined by the internal
wafer pattern
Built-in capacitance
5010A××, 5010B××
TBD
C
NIPPON PRECISION CIRCUITS—6
SM5010 s eries
5010CL× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.2
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 2.7 V, I = 8 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7 V, I = 8 mA
0.4
10
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 3.6 V, V = V
–
–
10
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
0.7V
V
V
IH
DD
V
0.3V
DD
IL
5010CL1
5010CL2
5010CL3
5010CL4
Measurement cct 3, load cct 2,
Current consumption
I
mA
TBD
DD
INH = open, C = 15 pF, f = 30 MHz
L
R
R
–
–
100
TBD
200
–
–
kΩ
UP 1
UP 2
INH pull-up resistance
Feedback resistance
Built-in capacitance
Measurement cct 4
Measurement cct 5
M
Ω
R
f
kΩ
C
pF
pF
G
D
Design value, determined by the internal wafer pattern
TBD
C
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
typ
4.2
0.3
–
Parameter
Symbol
Condition
Unit
min
4.0
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 4.5 V, I = 16 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5 V, I = 16 mA
0.4
10
OL
DD
OL
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, INH = LOW, V = 5.5 V, V = V
–
–
10
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
0.7V
V
V
IH
DD
V
0.3V
DD
IL
5010CL1
5010CL2
5010CL3
5010CL4
Measurement cct 3, load cct 2,
Current consumption
I
mA
TBD
DD
INH = open, C = 50 pF, f = 30 MHz
L
R
R
–
–
100
TBD
200
–
–
kΩ
UP 1
UP 2
INH pull-up resistance
Feedback resistance
Built-in capacitance
Measurement cct 4
Measurement cct 5
M
Ω
R
f
kΩ
C
pF
pF
G
D
Design value, determined by the internal wafer pattern
TBD
C
NIPPON PRECISION CIRCUITS—7
SM5010 s eries
Switching Characteristics
5010×N× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −10 to 70 °C unless otherwise noted.
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
ma x
6.0
Output rise time
t
Measurement cct 6, load cct 2, C = 15 pF, 0.1V to 0.9V
DD
3.0
ns
ns
r1
L
DD
Output fall time
t
Measurement cct 6, load cct 2, C = 15 pF, 0.9V to 0.1V
DD
–
3.0
6.0
f1
L
DD
Measurement cct 6, load cct 2, V = 3.0 V, Ta = 25 °C,
L
1
DD
Output duty cycle
Duty
40
–
60
%
C
= 15 pF, f = 30MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 3.0 V, Ta = 25 °C,
L
DD
C
= 15 pF
t
PZL
1. Determined by the lot monitor.
5010×N×, ×K× series
5 V operation (5010×N×): V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
ma x
4.0
8.0
4.0
8.0
t
C
C
C
C
= 15 pF
= 50 pF
= 15 pF
= 50 pF
–
–
–
–
2.0
r2
L
L
L
L
Measurement cct 6, load cct 2,
Output rise time
ns
0.1V to 0.9V
DD
DD
t
4.0
r3
t
2.0
f2
Measurement cct 6, load cct 2,
Output fall time
ns
%
0.9V to 0.1V
DD
DD
t
4.0
f3
Measurement cct 6, load cct 2, V = 5.0 V, Ta = 25
°
C,
1
DD
Output duty cycle
Duty
45
–
55
C
= 50 pF, f = 30MHz
L
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 5.0 V, Ta = 25
°
C,
DD
C
= 15 pF
L
t
PZL
1. Determined by the lot monitor.
5 V operation (5010AN2, AN3, AN4, BN2, BN3, BN4, ×K×): V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C
DD
SS
unless otherwise noted.
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
ma x
3.0
Output rise time
t
Measurement cct 6, load cct 1, C = 15 pF, 0.4V to 2.4V
1.5
ns
ns
r4
L
Output fall time
t
Measurement cct 6, load cct 1, C = 15 pF, 2.4V to 0.4V
–
1.5
3.0
f4
L
Measurement cct 6, load cct 1, V = 5.0 V, Ta = 25 °C,
L
1
DD
Output duty cycle
Duty
45
–
55
%
C
= 15 pF, f = 30MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0 V, Ta = 25 °C,
L
DD
C
= 15 pF
t
PZL
1. Determined by the lot monitor.
NIPPON PRECISION CIRCUITS—8
SM5010 s eries
5010×H× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −10 to 70 °C unless otherwise noted.
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
ma x
30
Output rise time
t
Measurement cct 6, load cct 2, C = 15 pF, 0.1V to 0.9V
DD
15
ns
ns
r1
L
DD
Output fall time
t
Measurement cct 6, load cct 2, C = 15 pF, 0.9V to 0.1V
DD
–
15
30
f1
L
DD
Measurement cct 6, load cct 2, V = 3.0 V, Ta = 25 °C,
L
1
DD
Output duty cycle
Duty
40
–
60
%
C
= 15 pF, f = 16MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 3.0 V, Ta = 25 °C,
L
DD
C
= 15 pF
t
PZL
1. Determined by the lot monitor.
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
typ
5
ma x
10
t
C
C
C
C
= 15 pF
= 50 pF
= 15 pF
= 50 pF
–
–
–
–
r2
L
L
L
L
Measurement cct 6, load cct 2,
Output rise time
ns
0.1V to 0.9V
DD
DD
t
13
5
26
r3
t
10
f2
Measurement cct 6, load cct 2,
Output fall time
ns
%
0.9V to 0.1V
DD
DD
t
13
26
f3
Measurement cct 6, load cct 2, V = 5.0 V, Ta = 25
°
C,
1
DD
Output duty cycle
Duty
45
–
55
C
= 15 pF, f = 30MHz
L
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 5.0 V, Ta = 25
°
C,
DD
C
= 15 pF
L
t
PZL
1. Determined by the lot monitor.
NIPPON PRECISION CIRCUITS—9
SM5010 s eries
5010CL× series
3 V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
ma x
4.0
6.0
4.0
6.0
t
C
C
C
C
= 15 pF
= 30 pF
= 15 pF
= 30 pF
–
–
–
–
2.0
r2
L
L
L
L
Measurement cct 6, load cct 2,
Output rise time
ns
0.1V to 0.9V
DD
DD
t
3.0
r4
t
2.0
f2
Measurement cct 6, load cct 2,
Output fall time
ns
%
0.9V to 0.1V
DD
DD
t
3.0
f4
Measurement cct 6, load cct 2, V = 3.0 V, Ta = 25 °C,
1
DD
Output duty cycle
Duty
45
–
55
C
= 15 pF, f = 30MHz
L
2
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 3.0 V, Ta = 25 °C,
L
DD
2
C = 15 pF
t
PZL
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5 V operation: V = 4.5 to 5.5 V, V = 0 V, Ta = −40 to 85 °C unless otherwise noted.
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
ma x
3.0
8.0
3.0
8.0
t
C
C
C
C
= 15 pF
= 50 pF
= 15 pF
= 50 pF
–
–
–
–
1.5
r2
L
L
L
L
Measurement cct 6, load cct 2,
Output rise time
ns
0.1V to 0.9V
DD
DD
t
4.0
r3
t
1.5
f2
Measurement cct 6, load cct 2,
Output fall time
ns
%
0.9V to 0.1V
DD
DD
t
4.0
f3
Measurement cct 6, load cct 2, V = 5.0 V, Ta = 25
°
C,
1
DD
Output duty cycle
Duty
40
–
60
C
= 50 pF, f = 30MHz
L
2
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 5.0 V, Ta = 25
°
C,
DD
2
C = 15 pF
L
t
PZL
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
Current consumption and Output waveform with NPC’s standard crystal
Cb
f (MHz)
R (Ω)
L (mH)
Ca (fF)
Cb (pF)
30
17.2
4.36
6.46
2.26
L
Ca
R
NIPPON PRECISION CIRCUITS—10
SM5010 s eries
FUNCTIONAL DESCRIPTION
Standby Function
AH, AK, AN, BH, BK, BN, DN series
When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
CL series
When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Vers ion
INH
HIGH (or open)
LOW
Q
Oscillator
Normal operation
Normal operation
Normal operation
Stopped
Any f , f /2, f /4 or f /8 output frequency
O
O
O
O
AH, AK, AN, BH, BK,
BN, DN series
High impedance
Any f , f /2, f /4 or f /8 output frequency
HIGH (or open)
LOW
O
O
O
O
CL series
High impedance
Power-save Pull-up Resistance (CL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
NIPPON PRECISION CIRCUITS—11
SM5010 s eries
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
3.0V or 5.0V
VDD
VDD
C1
VDD
IPR
Signal
Generator
RUP1 =
RUP2 =
(VIL = 0V)
XT
Q
R2
R1
VSS
VSS
INH
VDD VIH
IPR
(VIH = 0.7VDD)
V
VIH
VIL
VOH
0V
Q output
IPR
A
2.0V
, 10MHz sine wave input signal (3V operation)
, 10MHz sine wave input signal (5V operation)
P
−
−
P
P
3.5V
P
C1 : 0.001
R1 : 50
R2 : 263
245
1050
µF
Ω
Ω
(5010
(5010
(5010
(5010
(5010CL
(5010CL
×
N
×
,
×
K
K
×
/ 3V operation)
/ 5V operation)
/ 3V operation)
/ 5V operation)
Ω
×
N
×H ×
×
,
×
×
Ω
Measurement cct 5
975
275
250
Ω
×
H
×
Ω
Ω
×
/ 3V operation)
/ 5V operation)
×
VDD
XT
XT
Measurement cct 2
VDD
Rf =
IRf
VSS
IZ, IOL
A
VDD
IZ
IRf
Q
A
INH
VSS
V
OH
V
VOL
Measurement cct 6
IDD
IST
A
VDD
XT
Measurement cct 3
X'tal
Q
XT
INH
VSS
IDD
A
VDD
C1
Signal
Generator
XT
Q
R1
VSS
Measurement cct 7
2.0V
, 30MHz sine wave input signal (3V operation)
, 30MHz sine wave input signal (5V operation)
P
−
−
P
P
VDD
3.5V
P
Signal
Generator
C1 : 0.001
R1 : 50
µF
XT
Q
Ω
VSS INH
R1
R1 : 50
Ω
NIPPON PRECISION CIRCUITS—12
SM5010 s eries
Load cct 1
Load cct 2
Q output
R
CL
Q output
(Including probe
CL
capacitance)
(Including probe
capacitance)
C
= 15pF : DUTY , I , t , t
C
C
C
= 15pF : DUTY , I , t , t , t , t , t , t
DD r1 f1 r2 f2 r4 f4
L
DD
r
f
L
L
L
R = 400
Ω
= 30pF : t , t
r4 f4
= 50pF : t , t
r3 f3
Switching Time Measurement Waveform
Output duty level (CMOS)
0.9VDD
Q output
0.9VDD
DUTY measurement
voltage (0.5VDD)
0.1VDD
0.1VDD
TW
tr
tf
Output duty level (TTL)
DUTY measurement
voltage (1.4V)
2.4V
2.4V
0.4V
Q output
0.4V
TW
tr
tf
Output duty cycle (CMOS)
DUTY measurement
voltage (0.5VDD)
Q output
TW
DUTY= TW/ T 100 (%)
T
Output duty cycle (TTL)
DUTY measurement
voltage (1.4V)
Q output
TW
DUTY= TW/ T 100 (%)
T
NIPPON PRECISION CIRCUITS—13
SM5010 s eries
Output Enable/Disable Delay
INH
VIH
PZL
VIL
t
tPLZ
Q output
INH input waveform tr = tf 10ns
Note (CL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscil-
lator starts and stable oscillator output occurs after a short delay.
NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to
improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for
the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits
are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision
Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification.
The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or
malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter,
including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or
indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies.
NIPPON PRECISION CIRCUITS INC.
4-3, Fukuzumi 2-chome
Koto-ku, Tokyo 135-8430, Japan
Telephone: +81-3-3642-6661
Facsimile: +81-3-3642-6698
http://www.npc.co.jp/
NIPPON PRECISION CIRCUITS INC.
Email: sales@ npc.co.jp
NP0015AE 2000.10
NIPPON PRECISION CIRCUITS—14
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