CLC949AJQ [NSC]

Very Low-Power, 12-Bit, 20MSPS Monolithic A/D Convertter; 非常低功耗, 12位, 20MSPS单片A / D Convertter
CLC949AJQ
型号: CLC949AJQ
厂家: National Semiconductor    National Semiconductor
描述:

Very Low-Power, 12-Bit, 20MSPS Monolithic A/D Convertter
非常低功耗, 12位, 20MSPS单片A / D Convertter

文件: 总12页 (文件大小:740K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
August 1996  
N
Comlinear CLC949  
Very Low-Power, 12-Bit,  
20MSPS Monolithic A/D Convertter  
General Description  
Features  
The Comlinear CLC949 is a 12-bit analog-to-digital converter sub-  
system including 12-bit quantizer, sample-and-hold amplifier, and  
internal reference. The CLC949 has been optimized for low power  
operation with high dynamic range. The CLC949 has a unique  
feature which allows the user to adjust internal bias levels in the  
converter which results in a trade-off between power dissipation  
and maximum conversion rate. With bias set for 220mW power  
dissipation the converter operates at 20MSPS. Under these  
conditions, dynamic performance with a 9.9MHz analog input is  
typically 68dB SNR and 72dBc SFDR. When bias is set for only  
65mW power dissipation the converter maintains excellent perfor-  
mance at 5MSPS. With a 2.4MHz analog input signal the SNR is  
70dB and SFDR is 78dBc. This excellent dynamic performance in  
the frequency domain without high power requirements make the  
part a strong performer for communications and radar applications.  
The low input noise of the CLC949, its 0.5LSB differential linearity  
error specification, fast settling, and low power dissipation also  
lead to excellent performance in imaging systems. All parts are  
thoroughly tested to insure that guaranteed specifications are met.  
Very low/programmable power  
0.07W @ 5MSPS  
0.22W @ 20MSPS  
0.40W @ 30MSPS  
Single supply operation (+5V)  
0.5 LSB differential linearity error  
Wide dynamic range  
72dBc spurious-free dynamic range  
68dB signal-to-noise ratio  
No missing codes  
Applications  
CCD imaging  
IR imaging  
FLIR processing  
Medical imaging  
High definition video  
Instrumentation  
Radar processing  
Digital communications  
The CLC949 incorporates an input sample-and-hold amplifier  
followed by a quantizer which uses a pipelined architecture to min-  
imize comparator count and the associated power dissipation  
penalty. An on-board voltage reference is provided. Analog input  
signals, conversion clock, and a single supply are all that are  
required for CLC949 operation.  
The CLC949 exhibits very stable performance over the commercial  
and industrial temperature ranges. Most parameters shift very  
little as the ambient temperature changes from -40°C to 85°C. An  
exception to this rule is the dynamic performance of the converter.  
As the temperature is increased, the distortion increases,  
especially at higher input frequencies. This can be seen in the plot  
on page 3. For input frequencies below 7MHz, there is relatively  
little variation in distortion as the temperature is changed, but at  
higher input frequencies, it is apparent that the performance  
degrades as the temperature is increased.  
SFDR (dBc)  
Note that the reason for this degradation is the reduced ability of  
the CLC949 to handle high slew rates at high temperatures. In  
applications such as CCD imaging systems, where the slew rate at  
the A/D sampling instant is very low, this degradation will not be  
nearly so pronounced.  
For applications requiring high temperature operation and very low  
distortion with high frequency input signals, use of an external  
sample-and-hold amplifier may enhance performance by reducing  
the slew rates that the CLC949 sees during its sampling period (just  
after the falling edge of CLK).  
Power Dissipation vs. Conversion Rate  
200  
150  
100  
50  
The CLC949 is fabricated in a 0.9µm CMOS technology. The  
CLC949ACQ is specified over the commercial temperature range  
of 0°C to +70°C and the CLC949AJQ is specified over the indus-  
trial range of -40°C to +85°C. Both are packaged in a 44-pin  
0
0
5
10  
15  
20  
Plastic Leaded Chip Carrier (PLCC)  
.
Sample Rate (MSPS)  
© 1996 National Semiconductor Corporation  
Printed in the U.S.A.  
http://www.national.com  
(+VDD = + 5V, Medium Bias (200µA): unless specified)  
CLC949 Electrical Characteristics  
PARAMETERS  
CONDITIONS  
TYP  
MIN/MAX RATINGS  
UNITS SYMBOL  
Case Temperature  
+25˚C  
0 to 70˚C -40 to 85˚C  
DYNAMIC CHARACTERISTICS  
overvoltage recovery VIN = 1.5FS  
effective aperture delay  
aperture jitter  
slew rate  
settling time  
15  
3.0  
7.0  
400  
12  
25  
6.2  
15  
25  
6.2  
15  
25  
6.2  
15  
ns  
ns  
ps(rms)  
V/µS  
ns  
OR  
TA  
AJ  
SR  
ST  
NOISE and DISTORTION (20MSPS)  
Signal-to-Noise Ratio (no harmonics)  
4.985MHz;  
FS  
FS  
68  
68  
66  
66  
66  
66  
66  
66  
dB  
dB  
SNR2  
SNR3  
9.663MHz;  
Spurious-Free Dynamic Range  
4.985MHz;  
FS -1dB  
FS -1dB  
72  
72  
dBc  
dBc  
SFDR2  
SFDR3  
9.663MHz;  
63  
58  
55  
Intermodulation Distortion  
f1 = 5.58MHz @ FS -7dB; f2 = 5.70MHz @ FS -7dB  
3dB bandwidth (full power)  
-70  
100  
dBc  
MHz  
IMD  
BW  
NOISE and DISTORTION (5MSPS, low bias)  
Signal-to-Noise Ratio (no harmonics)  
2.4MHz;  
Spurious-Free Dynamic Range  
2.4MHz;  
FS  
70  
78  
68  
66  
68  
66  
67  
64  
dB  
SNR1  
FS -1dB  
dBc  
SFDR1  
NOISE and DISTORTION (25.6MSPS, high bias)  
Signal-to-Noise Ratio (no harmonics)  
9.894MHz;  
Spurious-Free Dynamic Range  
9.894MHz;  
FS  
67  
67  
63  
59  
63  
53  
63  
48  
dB  
SNR4  
FS-1dB  
dBc  
SFDR4  
DC ACCURACY and PERFORMANCE  
differential non-linearity  
integral non-linearity  
common mode rejection ratio  
missing codes  
mid-scale offset  
temperature coefficient  
gain error  
dc; FS  
dc; FS  
dc  
0.5  
1.2  
60  
0
5.0  
15  
1.0  
1.0  
3.5  
1.0  
3.5  
1.0  
3.5  
LSB  
LSB  
dB  
codes  
mV  
µV/°C  
%FS  
DNL  
INL  
CMRR  
MC  
VIO  
DVIO  
GE  
0
25  
0
25  
0
25  
5.0  
5.0  
5.0  
power supply rejection  
Vdda  
dc  
dc  
55  
50  
dB  
dB  
PSRA  
PSRD  
Vddd  
VOLTAGE REFERENCE CHARACTERISTICS  
positive reference voltage (internal)  
negative reference voltage (internal)  
3.25  
1.25  
2.0  
3.24-3.26 3.24-3.26  
1.24-1.26 1.24-1.26  
1.98-2.02 1.98-2.02  
3.24-3.26  
1.24-1.26  
1.98-2.02  
V
V
V
VREFP  
VREFN  
VDIFF  
differential reference voltage (Vrefp - Vrefn)  
ANALOG INPUT PERFORMANCE  
common mode range  
differential range  
analog input bias current  
analog input capacitance  
2 - 3  
± 2  
±0.1  
5.0  
V
V
µA  
pF  
VCM  
VDM  
IBN  
±1.0  
10  
±1.0  
10  
±1.0  
10  
CIN  
DIGITAL INPUTS  
CMOS input voltage  
logic LOW  
logic HIGH  
logic LOW  
logic HIGH  
1
4.0  
±1.0  
±1.0  
1
4.0  
±1.0  
±1.0  
1
4.0  
±1.0  
±1.0  
V
V
µA  
µA  
VIL  
VIH  
IIL  
CMOS input current  
±0.1  
±0.1  
IIH  
DIGITAL OUTPUTS  
CMOS output voltage  
logic LOW  
logic HIGH  
0.25  
4.8  
0.5  
4.5  
0.5  
4.5  
0.5  
4.5  
V
V
VOL  
VOH  
TIMING  
maximum conversion rate  
minimum conversion rate  
data hold time  
30  
10  
7.0  
6.5  
30  
10  
4.5  
6.5  
30  
10  
4.5  
6.5  
30  
10  
4.5  
6.5  
MSPS  
KSPS  
ns  
CR  
CRM  
THLD  
pipeline delay  
clocks  
POWER REQUIREMENTS  
supply current (+Vdd)  
44  
220  
65  
60  
300  
60  
300  
60  
300  
mA  
mW  
mW  
mW  
IDD  
PDM  
PDL  
PDH  
power dissipation  
20MSPS  
5MSPS  
30MSPS  
power dissipation (low bias)  
power dissipation (high bias)  
400  
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels  
are determined from tested parameters.  
http://www.national.com  
2
(+V = + 5V, Med Bias, Fs = 20MSPS: unless specified)  
CLC949 Typical Performance Characteristics  
DD  
Output Spectrum 1MHz  
Output Spectrum 9MHz  
Output Spectrum 15MHz  
0
0
0
-20  
-20  
-20  
-40  
-40  
-40  
-60  
-60  
-60  
-80  
-80  
-80  
-100  
-120  
-100  
-120  
-100  
-120  
0
2
4
6
8
10  
0
2
4
6
8
10  
0
2
4
6
8
10  
Frequency (MHz)  
Frequency (MHz)  
Frequency (MHz)  
SNR & SFDR vs. Input Amplitude 5MHz  
SNR & SFDR vs. Input Amplitude 9MHz  
SNR & SFDR vs. Input Amplitude 1MHz  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
80  
60  
40  
20  
0
SFDR  
SNR  
SFDR  
SNR  
SFDR  
SNR  
-50  
-40  
-30  
-20  
-10  
0
10  
-50  
-40  
-30  
-20  
-10  
0
10  
-50  
-40  
-30  
-20  
-10  
0
10  
Input Amplitude (dBFS)  
Input Amplitude (dBFS)  
Input Amplitude (dBFS)  
SNR vs. Sample Rate vs. Bias  
SFDR vs. Sample Rate vs. Bias  
SNR & SFDR vs. Input Frequency  
70  
60  
50  
40  
30  
80  
70  
60  
50  
40  
80  
70  
Medium Bias  
High Bias  
Low Bias  
High Bias  
Medium Bias  
Low Bias  
SFDR (dBc)  
SNR (dB)  
60  
50  
Fin = 5MHz  
Fin = 5MHz  
FS = 20MHz  
0
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
100  
100k  
1M  
10M  
100M  
Sample Rate (MSPS)  
Sample Rate (MSPS)  
Input Frequency (MHz)  
Two Tone Intermodulation Distortion  
Integral Non-Linearity  
Differential Non-Linearity  
0
-20  
2.5  
2
1.5  
1
1.5  
1
-40  
0.5  
0
0.5  
0
-60  
-0.5  
-1  
-80  
-0.5  
-1  
-1.5  
-2  
-100  
-120  
-2.5  
-1.5  
0
2
4
6
8
10  
0
1000  
2000  
3000  
4000  
0
1000  
2000  
3000  
4000  
Frequency (MHz)  
Output Code  
Output Code  
Pulse Settling Response  
SFDR vs. Input Frequency  
I/O Timing (Convert CLK & Bit Skew)  
4000  
3000  
80  
400  
300  
200  
100  
0
76  
72  
68  
64  
60  
-20°C  
0°C  
20°C  
2000  
1000  
Output Data  
Convert  
40°C  
60°C  
80°C  
0
0
50  
100  
150  
200  
0
4
8
12  
16  
20  
1
10  
100  
Input Frequency (MHz)  
Time (ns)  
Time (ns)  
3
http://www.national.com  
Recommended Operating Conditions  
Absolute Maximum Ratings*  
supply voltage (VDD  
differential voltage between any two GND’s  
analog input voltage range  
digital input voltage range  
output short circuit duration (one pin to gnd)  
junction temperature  
)
-0.5V to +7V  
supply voltage (VDD  
)
+5V ± 5%  
<10mV  
1.25 – 3.25V  
0 to VDD  
0°C to 70°C  
> 25ns  
200mV  
-0.5V to +VDD  
-0.5V to +VDD  
infinite  
differential voltage between any two GND’s  
analog input voltage range (full scale)  
digital input voltage range  
operating temperature range  
clock pulse-width high (Cpwh  
+175°C  
)
storage temperature range  
lead solder duration (+300°C)  
-65°C to +150°C  
10 sec  
*NOTE: Absolute maximum ratings are limiting values, to be applied individually, and beyond which the serviceability of the circuit may be impaired.  
Functional operability under any of these conditions is not necessarily implied. Exposure to maximum ratings for extended periods may affect device  
reliability.  
Pinout & Pin Description and Usage  
will all be tied together. For more detailed discussion,  
please refer to the paragraph on power and grounds in  
the applications section of the databook.  
6
5 4 3 2 1 44 43 42 41 40  
VREFMO  
VREFP  
VREFN  
BCO  
7
39  
38  
37  
36  
TOP VIEW  
D12(LSB)  
D11  
8
9
Clock (CLK)  
The CLK accepts a CMOS clock input. Samples are  
taken on the falling edges of the CLK and data emerges  
6 1/2 clock cycles later, on to the rising edge of the CLK.  
V
D10  
REFPC 10  
VREFNC 11  
NC 12  
35 D9  
34 D8  
44-Pin PLCC  
13  
14  
15  
16  
17  
33  
32  
31  
30  
29  
BIASC  
GNDA  
VINP  
D7  
D6  
D5  
D4  
D3  
Output Data (D1-D12, MSBINV, OE\)  
The data emerges from the CLC949 as CMOS level  
digital data on D1(MSB) through D12(LSB). The  
outputs can be put into a high impedance state by  
bringing OE\ high. There is an internal pulldown  
resistor so that if this input is left open, the output data is  
enabled. MSBINV will invert the MSB of the output data.  
With MSBINV in the high state, the output data is two’s  
complement, when low, the output data format is offset  
binary. An internal pulldown resistor makes the output  
default to offset binary if MSBINV is left open.  
VINN  
GNDA  
18 19 20 21 22 23 24 25 26 27 28  
References (V  
, V  
, V  
, V  
, V  
,
REFN  
REFP  
REFNO  
REFPO  
REFNC  
V
, V  
)
REFPC  
REFMO  
To use the internal references, connect V  
to V  
REFP  
REFPO  
and V  
to V  
. The nominal value for V  
is  
REFNO  
REFN  
REFPO  
3.25V and for V  
internal reference points which should be bypassed to  
GND with a 0.1µF capacitor. is an output  
voltage that is equal to the mid point of the reference  
range and can be used to apply the appropriate offset to  
the analog inputs. For a more detailed discussion on  
references, see the paragraph on references in the  
applications section of this datasheet.  
is 1.25V. V  
and V  
are  
REFNO  
REFPC  
REFNC  
Bias Control (BCO, BC1, BIASC)  
The DC bias current of the CLC949 is controlled by three  
pins: BCO, BC1, and BIASC. BC0 and BC1 are digital  
CMOS inputs and set the bias current in accordance with  
the truth table below:  
V
REFMO  
BC0 BC1  
Bias Current  
PD@10MSPS  
0
1
0
1
0
0
1
1
Default: Med Bias (200µA) 200mW  
Analog Input (V , V  
)
INP  
INN  
The analog input to the CLC949 is a differential signal  
applied to V and V . For more detail on driving the  
Analog Mode  
Variable  
350mW  
75mW  
INP  
INN  
High Bias (400µA)  
Low Bias (50µA)  
inputs, see the paragraphs in the applications section of  
this datasheet.  
Power Supplies and Grounds (V , V  
The power and ground pins of the CLC949 are split into  
those that supply the analog portions of the integrated  
, GND , GND )  
A D  
DDA DDD  
In the analog mode, the user provides a bias current  
through the BIASC pin of the CLC949. As the bias  
current is increased, the power dissipation of the CLC949  
is increased and the part becomes capable of increased  
conversion rates.  
circuit (V  
, GND ) and the digital portions of the chip  
DDA  
A
(V  
, GND ). If your system uses separate power and  
DDD  
D
ground planes, then performance can be improved by  
making use of the appropriate pins. In many systems,  
the power pins will all be tied together and the GND pins  
NC  
No connection - leave these pins open.  
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4
CLC949 OPERATION  
+5V  
+5V  
Application  
2.2k  
+
10k  
In a high speed data acquisition system, the overall  
performance is often determined by the A/D converter  
and its surrounding circuitry. You should pay special  
attention to the data converter and its support circuitry if  
you want to obtain the best possible performance. The  
information on these pages is intended to help you  
design the circuitry surrounding the CLC949 in such  
a way as to achieve superior results. Additional  
information is available in the form of Comlinear  
applications notes. Especially useful are AD-01 and  
AD-02.  
0.1µF  
9
6
Sinusoisal  
Clock Input  
3
To CLC949  
Clock  
0.1µF  
8
1
CLC006  
5
-
74AC04  
+5V  
4
10k  
1k  
50Ω  
2.2k  
1k  
10k  
50Ω  
0.1µF  
Figure 2: Clock Generation  
Here the CLC006 cable driver is used as a comparator to  
generate a high speed clock. The CLC006 has less than  
2ps of jitter and has rise and fall times less than 1ns. The  
CLC006 output is then buffered by a 74AC04 which  
maintains fast edge rates and provides CMOS levels for  
the CLC949. If there is excessive jitter in the CLK, then  
the digitized signal will exhibit an excessive amount of  
noise, especially for high frequency inputs. For a more  
detailed description of this phenomenon, please read the  
Comlinear Application Note AD-03.  
Circuit Description  
The CLC949 ADC consists of an input Sample-and-Hold  
Amplifier (SHA) followed by a pipelined quantizer.  
Internal reference sources and output data latches  
complete the major functions required of an A/D  
converter. Digital error correction in the quantizer helps  
to provide accurate conversions of high speed dynamic  
signals. The speed of the analog circuitry is determined  
in part by the internal bias currents applied. The CLC949  
allows you to make this important tradeoff between  
power and performance through settings on two digital  
control pins and for fine adjustments through the use of  
an external resistor.  
In addition to the circuitry generating the clock, the  
layout of the clock distribution network can affect the  
overall performance of the converter. To obtain the best  
possible performance, a clock driver with very low output  
impedance and fast edge rates such as the 74AC04,  
should be placed as close as possible to the CLC949  
clock input pin. Additional length in the circuit trace for  
the clock will cause an increase in the jitter seen by the  
converter. On the CLC949 evaluation board, the  
E949PCASM, there is less than 1/16th of an inch  
between the 74AC04 that is driving the clock input and  
the input to the CLC949. If the system has several  
CLC949s, and jitter is liable to generate problems, then  
use a separate clock driver for each CLC949. Each  
driver should be placed as close to the converter that it is  
driving as is practicable.  
Timing and CLK Generation  
The falling edge of the CLK pulse causes the input sam-  
ple-and-hold amplifier to transition into the hold mode.  
The sample is taken approximately 3ns after this falling  
edge. The digitized data is presented to the output latch-  
es 6 1/2 clock cycles later and is held until after the next  
rising edge of CLK. This timing is shown in the timing  
diagram, Figure 1.  
Effective Aperture Delay  
Sample 0  
Sample 2 Sample 4  
Sample 7  
Analog  
Input  
Sample 6  
Driving the Differential Input  
Sample 1  
Sample 3 Sample 5  
The CLC949 has a differential input with a common  
mode voltage of 2.25V. Since not all applications have a  
signal preconditioned in this manner there is often a need  
to do a single-ended-to-differential conversion and to add  
offset. In systems which do not need to be DC coupled,  
the best method for doing this is with an RF transformer  
such as the Minicircuits TMO1-1T. This is an RF  
transformer with a center tapped secondary which will  
operate over a frequency range of 50kHz to 200MHz.  
You can offset the input and split the phases simply by  
connecting the center tap to the mid scale reference  
CLK  
Output  
Data  
Sample  
-3 Valid  
Sample  
-2 Valid  
Sample  
-1 Valid  
Sample  
0 Valid  
Output Hold Time  
Figure 1: Timing Diagram  
The CLC949 is designed to operate with a CMOS clock  
signal. To obtain the lowest possible noise when  
digitizing a high frequency input, more care must be  
taken in the generation of this clock than is usually  
accorded to CMOS Clocks. To minimize aperture jitter  
induced errors, the CLK needs to have as low a  
jitter as possible and as fast an edge rate as possible. To  
obtain a very low jitter clock from a sinusoidal source, the  
circuit shown in Figure 2 is recommended.  
output (V  
) as shown in Figure 3.  
REFMO  
This set up can be realized on the CLC949 evaluation  
board by enabling option 1. See E949PCASM data  
sheet for details. A transformer coupled input will allow  
the CLC949 to exhibit the best possible distortion  
performance for high frequency input signals.  
5
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VIN  
Reference Generation  
The CLC949 has internally generated reference  
voltages. To use these references, you must externally  
VINP  
15pF  
15pF  
CLC949  
VREFMO  
connect the reference inputs by shorting V  
to  
50  
REFPO  
V
and V  
to V .  
During the conversion  
REFP  
REFNO  
REFN  
VINN  
cycle, the impedance on these four pins varies  
dynamically. To maintain stable biases on these pins you  
must bypass them with 0.1µF to GND. If you want to pro-  
vide an external reference, then you have to be careful  
TM01-1T  
Figure 3: Transformer Coupled Input  
Since the transformer response does not extend to DC it  
is not an effective solution for applications which require  
DC coupled inputs.  
to provide low output impedance drivers to the V  
and  
REFP  
V
pins. Bypass capacitors on all reference pins are  
REFN  
recommended for best performance.  
To drive the input of the CLC949, and retain DC  
information, an amplifier configuration is required.  
Comlinear suggests the use of the circuit shown in Figure 4.  
This circuit is used on the E949PCASM.  
Bias Control  
One of the unique features of the CLC949 is that it allows  
you to set the internal bias current of the device. When  
designing an A/D converter a tradeoff is made between  
the amount of power dissipated and the  
performance. The CLC949 allows you to make this  
tradeoff yourself. The bias current is controlled by the  
pins BC0 and BC1. These two pins are digital input pins  
from which one of three discrete bias points may be  
selected (see truth table on page 4 of this datasheet) or  
an external bias may be provided through the analog bias  
control pin BIASC. If BC0 and BC1 are left open, they  
will drift low and provide the default bias condition which  
results in 220mW of dissipation at 20MHz sampling rate.  
The actual power dissipated by the device is a function  
of both the bias condition and the sample rate. The  
relationship between power and speed is shown for the  
three discrete bias points in Figure 5.  
1k  
-
CLC428  
+
U5A  
1.25k  
1k  
-
+5V  
CLC428  
+
U5B  
500  
+5V  
500Ω  
500Ω  
VREFMO  
R3  
400Ω  
-
R27  
VINP  
CLC409  
+
VIN  
R30  
50Ω  
15pF  
15pF  
+5V  
U7  
50Ω  
CLC949  
R2  
R29  
400400Ω  
R7  
R10  
50Ω  
R8  
400Ω  
+
R26  
50Ω  
VINN  
CLC409  
Power Dissipation vs. Sample Rate  
50Ω  
-
U6  
400  
400Ω  
High Bias  
300  
Figure 4: Amplifier Coupled Input  
In this circuit U7 buffers the analog input with a gain of  
+1, and U6 buffers the input with a gain of -1. The  
circuit has been designed so that U6 and U7 have the  
same loop gain, thereby offering the best possible match  
of their AC characteristics. U5 is used to generate the  
required offset voltages which are summed into the input  
signal via U6 and U7. The CLC409 was selected for U6  
and U7 due to its current feedback topology which allows  
for very low distortion even at high frequencies, and its  
excellent phase linearity. Phase match between U6 and  
U7 is critical for good pulse response. To generate the  
D.C. offsets, the CLC428 dual Op-amp was selected.  
The CLC428 is a voltage-feedback op amp with very  
good DC characteristics, and the large bandwidth makes  
the output impedance low over a wide range of frequen-  
cies, allowing good AC performance.  
200  
Medium Bias  
100  
Low Bias  
0
100k  
1M  
10M  
40M  
Sample Rate (Hz)  
Figure 5: Power Dissipation vs. Sample Rate  
As the bias is turned up, the ability of the CLC949 to  
handle high frequency inputs and the power dissipation  
of the CLC949 increases. To use the BIASC pin, attach  
a resistor from the pin to V  
. The current drawn by this  
DDA  
resistor is mirrored in the device to set the internal bias  
currents. A smaller value resistor will result in higher bias  
currents and higher performance.Beyond a certain  
point, additional improvement is not seen, although  
power continues to increase. For this reason, it is  
recommended that bias setting resistors of less than  
10K not be used. To generate the graph in Figure 6 a  
CLC949 was set to sample a signal 1dB below full scale  
Regardless of how the input is driven, a small capacitor  
(15pF) should be added from the V  
and V  
INP  
INN  
terminals to GND. This will help to reduce the current  
transients that are generated by the CLC949 inputs  
during sampling.  
http://www.national.com  
6
with a frequency of 1/2 the sample rate. The bias current  
was then turned up until the SNR was better than 65dB  
and the SFDR exceeded 72dB. The axis on the left  
shows the power that was dissipated by the device as a  
function of speed, whereas the other curve uses the axis  
on the right to show the resistor value required to obtain  
this bias.  
the McKenzie #PLCC-44P-T-SMT socket which has low  
parasitic impedances. The traces from the clock source  
to the CLC949 should be as short as possible, if forced  
to put the clock driver more than a couple of  
centimeters away from the CLC949, then add a buffer for  
the clock right next to the CLC949.  
There is an evaluation board available for the CLC949  
(E949PCASM) This board can be used to quickly  
evaluate the performance of the CLC949 data converter.  
Use of this evaluation board as a model for your PCB lay-  
out is recommended. The schematic for this evaluation  
board is shown in Figure 8 on the following page. The  
board layout for the E949PCASM is shown in the  
E949PCASM datasheet.  
Power Dissipation & Programming  
Resistor vs. Sample Rate  
200  
150  
100  
50  
50  
40  
30  
20  
0
Resistor  
Power  
Power Supplies, Grounding and Bypassing  
To obtain the best possible performance from high speed  
devices, you must pay close attention to power supplies,  
bypassing and grounding. This applies not only to the  
A/D converter itself but to the entire system.  
0
0
5
10  
15  
20  
Sample Rate (MSPS)  
The recommended supply decoupling scheme for the  
CLC949 includes:  
Figure 6: Power Dissipation & Programming  
Resistor vs. Sample Rate  
One 0.01 to 0.033µF capacitor between each  
power pin and GND.  
One 6.8 to 10µF capacitor per board, placed no  
more than a few inches from the A/D connected  
Dynamic Power Down  
In systems where you do not use the A/D converter con-  
tinually, and low power consumption is a key require-  
ment, the power to the CLC949 can be turned down while  
it is not being used. This is done through the use of the  
BIASC pin, and a programming resistor to the power  
supply. When the potential on this resistor is brought low,  
the part goes into a sleep mode which saves power. This  
can be accomplished by connecting the bias setting  
resistor to a CMOS gate as shown in Figure 7. In sleep  
mode the CLC949 will draw approximately 8mA, or  
40mW on a 5V supply.  
between V and GND.  
DD  
One 0.1µF capacitor from each of the reference  
inputs (V  
, V  
, V  
, V  
) to GND.  
REFP  
REFN  
REFPC  
REFNC  
If the board has supplies that include excessive  
digital switching noise, then ferrite beads in series  
with the power feed to the A/D should also be  
included.  
Proper bypassing of all other integrated circuits  
on the board, especially digital logic I.C.s.  
Package Thermal Resistance  
CLC949  
Package  
θJC  
θJA  
BIASC BC0 BC1  
Sleep  
44-pin PLCC  
10°C/W  
35°C/W  
Rp*  
10k  
CMOS Inverter  
Ordering Information  
VDD  
*See Figure 6 above.  
Model  
Temperature Range  
Description  
CLC949ACQ  
CLC949AJQ  
0 C to +70 C  
44-pin PLCC  
44-pin PLCC  
˚
˚
Figure 7: Dynamic Power Savings  
PCB Layout  
-40 C to +85 C  
˚
˚
The keys to  
a successful CLC949 layout are  
Power Requirements  
a substantial low-impedance ground plane, short  
connections in and out of the data converter, and proper  
power supply decoupling. The use of a socket for the  
final design is not recommended but if one must be used  
during debug or prototyping, then Comlinear recommends  
Typ  
Units  
Vcc = +5V, 5MSPS, Low Bias  
65  
mW  
mW  
mW  
Vcc = +5V, 20MSPS, Med Bias  
Vcc = +5V, 30MSPS, High Bias  
220  
400  
7
http://www.national.com  
B C 1  
C L K  
N C  
D 2  
D 1 ( M S B )  
O E \  
D D D  
M S B I N V  
G N D  
V
D D D  
V
D
D
D
A
A
D D D  
V
G N D  
D D A  
V
G N D  
D D A  
V
G N D  
D D A  
V
G N D  
R E F N O  
A
A
V
G N D  
G N D  
R E F P O  
V
Figure 8: CLC949 Evaluation Board  
8
http://www.national.com  
This page intentionally left blank.  
9
http://www.national.com  
This page intentionally left blank.  
http://www.national.com  
10  
This page intentionally left blank.  
11  
http://www.national.com  
Customer Design Applications Support  
National Semiconductor is committed to design excellence. For sales, literature and technical support, call the  
National Semiconductor Customer Response Group at 1-800-272-9959 or fax 1-800-737-7018.  
Life Support Policy  
National’s products are not authorized for use as critical components in life support devices or systems without the express written approval  
of the president of National Semiconductor Corporation. As used herein:  
1. Life support devices or systems are devices or systems which, a) are intended for surgical implant into the body, or b) support or  
sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its safety or effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax: (+49) 0-180-530 85 86  
E-mail: europe.support.nsc.com  
Deutsch Tel: (+49) 0-180-530 85 85  
English Tel: (+49) 0-180-532 78 32  
Francais Tel: (+49) 0-180-532 93 58  
Italiano Tel: (+49) 0-180-534 16 80  
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Ocean Centre, 5 Canton Road  
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Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
N
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said  
circuitry and specifications.  
http://www.national.com  
12  
Lit #150949-004  

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