DP8226M [NSC]
;型号: | DP8226M |
厂家: | National Semiconductor |
描述: |
|
文件: | 总6页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
June 1990
DP8216/DP8216M/DP8226/DP8226M
4-Bit Bidirectional Bus Transceivers
General Description
The DP8216/DP8216M and DP8226/DP8226M are 4-bit bi-
directional bus drivers to use in bus oriented applications.
The non-inverting DP8216/DP8216M and inverting
DP8226/DP8226M drivers are provided for flexibility in sys-
tem design.
The DIEN input controls the direction of data flow, which is
accomplished by forcing one of the pair of buffers into its
high-impedance state and allowing the other to transmit its
data. A simple two-gate circuit is used for this function.
Features
Y
Each buffered line of the four-bit drivers consists of two
separate buffers that are TRI-STATE to achieve direct bus
É
Data bus buffer driver to 8080 type CPUs
interface and bidirectional capability. On one side of the
driver the output of one buffer and the input of another are
tied together (DB); this side is used to interface to the sys-
tem side components such as memories, I/O, etc., because
its interface is TTL compatible and it has high driver (50
mA). On the other side of the driver the inputs and outputs
are separated to provide maximum flexibility. Of course,
they can be tied together so that the driver can be used to
buffer a true bidirectional bus. The DO outputs on this side
of the driver have a special high voltage output drive capa-
bility so that direct interface to the 8080 type CPUs is
achieved with an adequate amount of noise immunity.
Y
Low input load currentÐ0.25 mA maximum
Y
High output drive capability for driving system data
busÐ50 mA at 0.5V
Y
Power up-down protection
Y
DP8216/DP8216M have non-inverting outputs
Y
DP8226/DP8226M have inverting outputs
Y
Output high voltage compatible with direct interface to
MOS
Y
TRI-STATE outputs
Y
Advanced Schottky processing
Y
Available in military and commercial temperature
The CS input is a device enable. When it is ‘‘high’’ the out-
put drivers are all forced to their high-impedance state.
When it is a ‘‘low’’ the device is enabled and the direction of
the data flow is determined by the DIEN input.
Logic Diagrams
DP8216/DP8216M
DP8226/DP8226M
TL/F/8753–1
TL/F/8753–2
TRI-STATEÉ is a registered trademark of National Semiconductor Corp.
C
1995 National Semiconductor Corporation
TL/F/8753
RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Min Max Units
b
a
65 150
Storage Temperature
C
C
§
§
Lead Temperature (soldering, 4 seconds)
260
Min
Max Units
b
a
a
All Output and Supply Voltages
All Input Voltages
0.5
1.0
7.0
5.5
V
V
Operating Conditions
Min
b
Max
Units
Output Currents
125
mA
Supply Voltage, V
CC
DP8216M, DP8226M
DP8216, DP8226
4.5
4.75
5.5
5.25
V
V
Maximum Power Dissipation* at 25 C
Cavity Package
Molded Package
§
1509 mW
1476 mW
Temperature, T
A
Note: *Derate cavity package 10.1 mW/ C above 25 C; derate molded
b
0
a
125
§
§
DP8216M, DP8226M
DP8216, DP8226
55
C
C
§
§
package 11.8 mW/ C above 25 C.
§
§
a
70
e
g
5V 5% (Notes 2, 3, and 4)
Electrical Characteristics DP8216, DP8226 V
CC
Limits
Typ
Symbol
Parameter
Conditions
Units
Min
Max
DRIVERS
V
V
Input Low Voltage
0.95
V
V
IL
Input High Voltage
Input Load Current
Input Leakage Current
Input Clamp Voltage
Output Low Voltage
Output Low Voltage
2
IH
e
b
b
I
I
V
V
0.45V
5.25V
0.03
0.25
mA
mA
V
F
F
e
10
R
R
e b
b
1.2
V
V
V
I
I
5 mA
C
C
e
25 mA
0.3
0.5
3.0
0.45
V
OL1
OL2
OL
e
e
DP8216 I
DP8226 I
55 mA
50 mA
OL
0.6
V
OL
e b
OH
V
OH
Output High Voltage
I
10 mA
5V
2.4
V
e
CC
b
b
b
I
Output Short Circuit Current
Output Leakage Current TRI-STATE
V
V
30
75
120
mA
mA
SC
e
O
I
0.45V/5.5V
100
l
O
l
RECEIVERS
V
V
Input Low Voltage
0.95
V
V
IL
Input High Voltage
2
IH
e
F
b
b
0.25
I
Input Load Current
V
0.45V
0.08
mA
V
F
e b
b
1.2
0.45
V
V
V
Input Clamp Voltage
I
I
I
5 mA
C
C
e
Output Low Voltage
15 mA
0.3
4.0
V
OL
OH1
OL
OH
e b
Output High Voltage
1 mA
3.65
V
e
CC
b
b
b
I
Output Short Circuit Current
Output Leakage Current TRI-STATE
V
V
5V
15
35
65
mA
mA
SC
e
I
0.45V/5.5V
20
l l
CONTROL INPUTS (CS, DIEN)
O
O
V
V
Input Low Voltage
Input High Voltage
Input Load Current
Input Leakage Current
0.95
V
V
IL
2
IH
e
e
b
b
I
I
I
V
V
0.45V
5.25V
0.15
0.5
mA
mA
F
F
20
R
R
Power Supply Current
DP8216
CC
95
85
130
120
mA
mA
DP8226
2
e
g
5V 10% (Notes 2, 3 and 4)
Electrical Characteristics (Continued) DP8216M, DP8226M V
CC
Limits
Symbol
Parameter
Conditions
Units
Min
Typ
Max
DRIVERS
V
IL
Input Low Voltage
DP8216M
DP8226M
0.95
0.90
V
V
V
Input High Voltage
2
V
mA
mA
V
IH
e
e
b
b
I
I
Input Load Current
V
V
0.45V
5.5V
0.08
0.25
F
F
Input Leakage Current
Input Clamp Voltage
40
R
R
e b
b
1.2
V
V
V
V
I
I
I
I
5 mA
25 mA
45 mA
C
C
e
e
Output Low Voltage
0.3
0.5
3.0
0.45
0.6
V
OL1
OL2
OH
OL
OL
OH
Output Low Voltage
V
e b
Output High Voltage
5 mA
2.4
V
e
CC
b
b
b
I
Output Short Circuit Current
Output Leakage Current TRI-STATE
V
V
5.0V
30
75
120
mA
mA
SC
e
O
I
0.45V/5.5V
100
l l
RECEIVERS
O
V
IL
Input Low Voltage
DP8216M
0.95
0.9
V
V
DP8226M
V
Input High Voltage
2
V
mA
V
IH
e
F
b
b
0.25
I
Input Load Current
V
0.45V
0.08
F
e b
b
1.2
0.45
V
V
V
V
Input Clamp Voltage
I
I
I
I
5 mA
C
C
e
Output Low Voltage
15 mA
0.3
3.8
V
OL
OL
OH
OH
e b
e b
Output High Voltage
0.5 mA
2 mA
3.4
2.4
V
OH1
OH2
Output High Voltage
V
e
CC
b
b
b
I
Output Short Circuit Current
Output Leakage Current TRI-STATE
V
V
5.0V
15
35
65
mA
mA
SC
e
I
0.45V/5.5V
20
l l
CONTROL INPUTS (CS, DIEN)
O
O
V
IL
Input Low Voltage
DP8216M
0.95
0.9
V
V
DP8226M
V
Input High Voltage
Input Load Current
Input Leakage Current
2
V
IH
e
e
b
b
I
I
I
V
V
0.45V
5.5V
0.15
0.5
mA
mA
F
F
80
R
R
Power Supply Current
DP8216M
CC
95
85
130
120
mA
mA
DP8226M
3
Switching Characteristics (Notes 2, 3 and 4)
Limits
Typ
Symbol
Parameter
Conditions
Units
Min
Max
e
g
5V 10%
DP8216M, DP8226M, V
CC
e
e
e
300X,
t
Input to Output Delay, DO Outputs
C
30 pF, R
1
PD1
L
15
25
ns
R
600X
2
e
e
e
90X,
t
Input to Output Delay, DB Outputs
DP8216M
C
300 pF, R
PD2
L
1
R
180X
19
16
33
25
ns
ns
2
DP8226M
e
e
t
t
Output Enable Time
DP8216M
DO Outputs: C
30 pF,
E
L
e
e
R
R
300X
600X
42
36
75
62
ns
ns
1
DP8226M
2
DB Outputs: C
300 pF,
L
e
e
R
R
90X
1
2
180X
e
e
Output Disable Time
DP8216M
DO Outputs: C
5 pF,
5 pF,
D
L
e
e
R
R
300X
600X
16
16
40
38
ns
ns
1
DP8226M
2
DB Outputs: C
L
e
e
R
R
90X
1
2
180X
e
g
5.0V 5%
DP8216, DP8226 V
CC
e
e
e
t
Input to Output Delay, DO Outputs
C
30 pF, R
1
300X,
PD1
L
15
25
ns
R
600X
2
e
e
e
90X,
t
Input to Output Delay, DB Outputs
C
300 pF, R
PD2
L
1
DP8216
DP8226
R
180X
20
16
30
25
ns
ns
2
e
e
t
t
Output Enable Time
DP8216
DO Outputs: C
30 pF,
E
L
e
e
R
R
300X
600X
45
35
65
54
ns
ns
1
DP8226
2
DB Outputs: C
300 pF,
L
e
e
R
R
90X
1
2
180X
e
e
Output Disable Time
DO Outputs: C
5 pF,
5 pF,
D
L
e
e
R
R
300X
600X
1
2
20
35
ns
DB Outputs: C
L
e
e
R
R
90X
1
2
180X
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the
devices should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation.
b
a
Note 2: Unless otherwise specified, min/max limits apply across the 55 C to 125 C temperature range for the DP8216M and DP8226M and across the
§
§
0 C to 70 C temperature range for the DP8216 and DP8226. All typical values are given for V
a
e
e
5V and T 25 C.
A
§
§
§
CC
Note 3: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to ground unless otherwise specified.
Note 4: Only one output at a time should be shorted.
4
Test Conditions
Input rise and fall times of 5.0 ns between 1.0V and 2.0V.
Output loading is 5.0 mA and 10 pF.
Speed measurements are made at 1.5V levels.
Test Load Circuit
TL/F/8753–4
Switching Time Waveforms
TL/F/8753–5
e
Connection Diagram
Capacitance T
25 C
§
A
Limit
Symbol
Parameter
Unit
Dual-In-Line Package
Min Typ Min
C
C
Input Capacitance
4
6
pF
IN
Output Capacitance
DO Outputs
OUT
6
10
18
pF
pF
DO Outputs
13
Note: This parameter is periodically sampled and is not 100% tested. Condi-
e
e
e
e
5.0V, and T
A
tion of measurement is f
1 MHz, V
2.5V, V
BIAS
CC
25 C.
§
TL/F/8753–3
Order Number DP8216J, DP8216N, DP8226J, DP8226N,
DP8216MJ or DP8226MJ
See NS Package Number J16A or N16A
5
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number DP8216J, DP8226J, DP8216MJ or DP8226MJ
NS Package Number J16A
Molded Dual-In-Line Package (N)
Order Number DP8216N, or DP8226N
NS Package N16A
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