DS0025CH [NSC]
Two Phase MOS Clock Driver; 两相MOS时钟驱动器型号: | DS0025CH |
厂家: | National Semiconductor |
描述: | Two Phase MOS Clock Driver |
文件: | 总6页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
June 1992
DS0025C Two Phase MOS Clock Driver
General Description
Features
Y
8-lead TO-5 or 8-lead or 14-lead dual-in-line package
High Output Voltage SwingsÐup to 25V
The DS0025C is a monolithic, low cost, two phase MOS
clock driver that is designed to be driven by TTL line drivers
or buffers such as the DS8830 or DM7440. Two input cou-
pling capacitors are used to perform the level shift from TTL
to MOS logic levels. Optimum performance in turn-off delay
and fall time are obtained when the output pulse is logically
controlled by the input. However, output pulse width may be
set by selection of the input capacitor eliminating the need
for tight input pulse control.
Y
Y
Y
Y
Y
High Output Current Drive CapabilityÐup to 1.5A
l
Rep. Rate: 1.0 MHz into
1000 pF
Driven by DS8830, DM7440
‘‘Zero’’ Quiescent Power
Connection Diagrams
Metal Can Package
Dual-In-Line Package
TL/F/5852–1
Note: Pin 4 connected to case.
Top View
Order Number DS0025CH
See NS Package Number H08C
TL/F/5852–2
Top View
Order Number DS0025CJ-8
or DS0025CN
See NS Package Number J08A or N08E
Dual-In-Line Package
TL/F/5852–3
Top View
Order Number DS0025CJ
See NS Package Number J14A
C
1995 National Semiconductor Corporation
TL/F/5852
RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Note 1)
Recommended Operating
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Conditions
Va Vb Differential Voltage
Min
20V
Max
(Va
V
b)Voltage Differential
25V
100 mA
1.5A
b
Temperature
0
70
Input Current
Maximum Power Dissipation* at 25 C
§
Peak Output Current
8-Pin Cavity Package
14-Pin Cavity Package
Molded Package
1150 mW
1410 mW
1080 mW
670 mW
b
a
65 C to 150 C
Storage Temperature
Operating Temperature
Lead Temperature (Soldering, 10 sec)
§
0 C to 85 C
§
a
§
§
Metal Can (TO-5) Package
300 C
§
* Derate 8-pin cavity package 7.8 mW/ C above 25 C; de-
§
§
rate 14-pin cavity package 9.5 mW/ C above 25 C; derate
§
§
molded package 8.7 mW/ C above 25 C; derate metal
§
§
can (TO-5) package 4.5 mW/ C above 25 C.
§
§
Electrical Characteristics (Notes 2 and 3) See test circuit.
Symbol
Parameter
Turn-On Delay Time
Rise Time
Conditions
Min
Typ
15
Max
30
Units
ns
e
e
e
e
e
e
e
e
e
t
t
t
C
IN
C
IN
C
IN
0.001 mF, R
0.001 mF, R
0.001 mF, R
0X, C
0X, C
0X, C
0.001 mF
0.001 mF
0.001 mF
d ON
RISE
d OFF
IN
IN
IN
L
L
L
25
50
ns
Turn-Off Delay Time
30
60
ns
(Note 4)
e
e
t
Fall Time
C
C
0.001 mF, R
0X,
0X,
(Note 4)
(Note 5)
60
90
120
250
ns
ns
ns
FALL
IN
IN
e
0.001 mF
L
100
150
500
e
0.001 mF, R
e
PW
V
Pulse Width (50% to 50%)
C
C
IN
IN
e
0.001 mF (Note 5)
L
Positive Output Voltage Swing
Negative Output Voltage Swing
V
0V, I
OUT
1 mA
1 mA
Va 1.0 Va 0.7V
V
V
e
IN
e b
e
b
b
a
O
O
V
I
IN
10 mA, I
Vb 0.7V Vb 1.5V
a a
e
b
OUT
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: Unless otherwise specified min/max limits apply across the 0 C to 70 C range for the DS0025C.
§
§
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: Parameter values apply for clock pulse width determined by input pulse width.
Note 5: Parameter values for input width greater than output clock pulse width.
Timing Diagram
TL/F/5852–5
2
Typical Application
TL/F/5852–4
AC Test Circuit
TL/F/5852–6
*Q1 is selected high speed NPN switching transistor.
Typical Performance
Transient Power vs Rep. Rate
DC Power (P ) vs Duty Cycle
DC
TL/F/5852–8
DUTY CYCLE (%)
2
) (DC)
TL/F/5852–7
Va –Vb
(Va –Vb) fC
2
e
P
AC
L
e
P
DC
1k
Maximum Load Capacitance
Output PW Controlled by C
IN
TL/F/5852–10
TL/F/5852–9
e
I
I
Peak Current delivered by driver
0.6
b
(P
MAX
) (1k)–(Va
(f) (1k) (Va
V
)
(DC)
(I ) (t )
r
2
b
b
MAX
pk
k
k
C
L
b
b
V
)
Va
V
2
V
BE
b
e
MIN
R1
1k
3
Applications Information
Circuit Operation
Transient Output Power
Input current forced into the base of Q through the cou-
1
pling capacitor C causes Q to be driven into saturation,
The average transient power (P ) dissipated, is equal to
ac
the energy needed to charge and discharge the output ca-
IN
swinging the output to Vb
1
a
V
a
(sat)
CE
V
Diode
.
pacitive load (C ) multiplied by the frequency of operation
L
(f).
When the input current has decayed, or has been switched,
such that Q turns off, Q receives base drive through R ,
turning Q on. This supplies current to the load and the
2
)
e
P
AC
C
x (Va –Vb
L
x f
(2)
1
2
2
b
For Va
400 mW.
Internal Power
V
20V, f
1.0 MHz, C
1000 pF, P
AC
b
e
e
e
e
2
L
output swings positive to Va –V
.
BE
k
Negligible ( 3 mW)
‘‘0’’ State
‘‘1’’ State
(Va –Vb
2
)
e
e
P
int
x Duty Cycle
(3)
R
2
80 mW for Va –Vb
20V, DC
e
e
20%
Package Power Dissipation
e
a
internal
Total average power
power.
transient output power
Example Calculation
How many MM506 shift registers can be driven by
a
TL/F/5852–11
DS0025CN driver at 1 MHz using a clock pulse width of 200
ns, rise time 30–50 ns and 16V amplitude over the tempera-
ture range 0 –70 C?
FIGURE 1. DS0025 Schematic (One-Half Circuit)
It may be noted that Q must switch off before Q begins to
supply current, hence high internal transients currents from
Vb to Va cannot occur.
1
2
§
§
Power Dissipation:
At 70 C the DS0025CN can dissipate 870 mW when sol-
§
dered into printed circuit board.
Fan-Out Calculation
The drive capability of the DS0025 is a function of system
requirements, i.e. speed, ambient temperature, voltage
swing, drive circuitry, and stray wiring capacity.
Transient Peak Current Limitation:
From equation (1), it can be seen that at 16V and 30 ns, the
maximum load that can be driven is limited to 2800 pF.
The following equations cover the necessary calculations to
enable the fan-out to be calculated for any system condi-
tion.
Average Internal Power:
Equation (3), gives an average power of 50 mW at 16V and
a 20% duty cycle.
Transient Current
The maximum peak output current of the DS0025 is given
as 1.5A. Average transient current required from the driver
can be calculated from:
d
For one-half of the DS0025C, 870 mW
ed.
2 can be dissipat-
e
e
a
transient output power.
435 mW
385 mW
50 mW
C
L
(Va –Vb
)
transient output power.
e
I
(1)
t
r
Using equation (2) at 16V, 1 MHz and 350 mW, each half of
the DS0025CN can drive a 1367 pF load. This is less than
the load imposed by the transient current limitation of equa-
tion (1) and so a maximum load of 1367 pF would prevail.
b
Typical rise times into 1000 pF load is 25 ns. For Va
V
b
e
e
0.8A.
20V, I
From the data sheet for the MM506, the average clock
pulse load is 80 pF. Therefore the number of devices driven
is 1367/80 or 17 registers.
For further information please refer to National Semicon-
ductors Application Note AN-76.
4
Physical Dimensions inches (millimeters)
Order Number DS0025CH
NS Package Number H08C
Order Number DS0025CJ
NS Package Number J08A
5
Physical Dimensions inches (millimeters) (Continued)
Order Number DS0025CJ
NS Package Number J14A
Order Number DS0025CN
NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Corporation
National Semiconductor
Europe
National Semiconductor
Hong Kong Ltd.
National Semiconductor
Japan Ltd.
a
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
Fax:
(
49) 0-180-530 85 86
@
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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