DS0025CN [NSC]

Two Phase MOS Clock Driver; 两相MOS时钟驱动器
DS0025CN
型号: DS0025CN
厂家: National Semiconductor    National Semiconductor
描述:

Two Phase MOS Clock Driver
两相MOS时钟驱动器

时钟驱动器
文件: 总6页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
June 1992  
DS0025C Two Phase MOS Clock Driver  
General Description  
Features  
Y
8-lead TO-5 or 8-lead or 14-lead dual-in-line package  
High Output Voltage SwingsÐup to 25V  
The DS0025C is a monolithic, low cost, two phase MOS  
clock driver that is designed to be driven by TTL line drivers  
or buffers such as the DS8830 or DM7440. Two input cou-  
pling capacitors are used to perform the level shift from TTL  
to MOS logic levels. Optimum performance in turn-off delay  
and fall time are obtained when the output pulse is logically  
controlled by the input. However, output pulse width may be  
set by selection of the input capacitor eliminating the need  
for tight input pulse control.  
Y
Y
Y
Y
Y
High Output Current Drive CapabilityÐup to 1.5A  
l
Rep. Rate: 1.0 MHz into  
1000 pF  
Driven by DS8830, DM7440  
‘‘Zero’’ Quiescent Power  
Connection Diagrams  
Metal Can Package  
Dual-In-Line Package  
TL/F/5852–1  
Note: Pin 4 connected to case.  
Top View  
Order Number DS0025CH  
See NS Package Number H08C  
TL/F/5852–2  
Top View  
Order Number DS0025CJ-8  
or DS0025CN  
See NS Package Number J08A or N08E  
Dual-In-Line Package  
TL/F/5852–3  
Top View  
Order Number DS0025CJ  
See NS Package Number J14A  
C
1995 National Semiconductor Corporation  
TL/F/5852  
RRD-B30M105/Printed in U. S. A.  
Absolute Maximum Ratings (Note 1)  
Recommended Operating  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
Conditions  
Va Vb Differential Voltage  
Min  
20V  
Max  
(Va  
V
b)Voltage Differential  
25V  
100 mA  
1.5A  
b
Temperature  
0
70  
Input Current  
Maximum Power Dissipation* at 25 C  
§
Peak Output Current  
8-Pin Cavity Package  
14-Pin Cavity Package  
Molded Package  
1150 mW  
1410 mW  
1080 mW  
670 mW  
b
a
65 C to 150 C  
Storage Temperature  
Operating Temperature  
Lead Temperature (Soldering, 10 sec)  
§
0 C to 85 C  
§
a
§
§
Metal Can (TO-5) Package  
300 C  
§
* Derate 8-pin cavity package 7.8 mW/ C above 25 C; de-  
§
§
rate 14-pin cavity package 9.5 mW/ C above 25 C; derate  
§
§
molded package 8.7 mW/ C above 25 C; derate metal  
§
§
can (TO-5) package 4.5 mW/ C above 25 C.  
§
§
Electrical Characteristics (Notes 2 and 3) See test circuit.  
Symbol  
Parameter  
Turn-On Delay Time  
Rise Time  
Conditions  
Min  
Typ  
15  
Max  
30  
Units  
ns  
e
e
e
e
e
e
e
e
e
t
t
t
C
IN  
C
IN  
C
IN  
0.001 mF, R  
0.001 mF, R  
0.001 mF, R  
0X, C  
0X, C  
0X, C  
0.001 mF  
0.001 mF  
0.001 mF  
d ON  
RISE  
d OFF  
IN  
IN  
IN  
L
L
L
25  
50  
ns  
Turn-Off Delay Time  
30  
60  
ns  
(Note 4)  
e
e
t
Fall Time  
C
C
0.001 mF, R  
0X,  
0X,  
(Note 4)  
(Note 5)  
60  
90  
120  
250  
ns  
ns  
ns  
FALL  
IN  
IN  
e
0.001 mF  
L
100  
150  
500  
e
0.001 mF, R  
e
PW  
V
Pulse Width (50% to 50%)  
C
C
IN  
IN  
e
0.001 mF (Note 5)  
L
Positive Output Voltage Swing  
Negative Output Voltage Swing  
V
0V, I  
OUT  
1 mA  
1 mA  
Va 1.0 Va 0.7V  
V
V
e
IN  
e b  
e
b
b
a
O
O
V
I
IN  
10 mA, I  
Vb 0.7V Vb 1.5V  
a a  
e
b
OUT  
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’  
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device  
operation.  
Note 2: Unless otherwise specified min/max limits apply across the 0 C to 70 C range for the DS0025C.  
§
§
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown  
as max or min on absolute value basis.  
Note 4: Parameter values apply for clock pulse width determined by input pulse width.  
Note 5: Parameter values for input width greater than output clock pulse width.  
Timing Diagram  
TL/F/5852–5  
2
Typical Application  
TL/F/5852–4  
AC Test Circuit  
TL/F/5852–6  
*Q1 is selected high speed NPN switching transistor.  
Typical Performance  
Transient Power vs Rep. Rate  
DC Power (P ) vs Duty Cycle  
DC  
TL/F/5852–8  
DUTY CYCLE (%)  
2
) (DC)  
TL/F/5852–7  
Va Vb  
(Va Vb) fC  
2
e
P
AC  
L
e
P
DC  
1k  
Maximum Load Capacitance  
Output PW Controlled by C  
IN  
TL/F/585210  
TL/F/5852–9  
e
I
I
Peak Current delivered by driver  
0.6  
b
(P  
MAX  
) (1k)(Va  
(f) (1k) (Va  
V
)
(DC)  
(I ) (t )  
r
2
b
b
MAX  
pk  
k
k
C
L
b
b
V
)
Va  
V
2
V
BE  
b
e
MIN  
R1  
1k  
3
Applications Information  
Circuit Operation  
Transient Output Power  
Input current forced into the base of Q through the cou-  
1
pling capacitor C causes Q to be driven into saturation,  
The average transient power (P ) dissipated, is equal to  
ac  
the energy needed to charge and discharge the output ca-  
IN  
swinging the output to Vb  
1
a
V
a
(sat)  
CE  
V
Diode  
.
pacitive load (C ) multiplied by the frequency of operation  
L
(f).  
When the input current has decayed, or has been switched,  
such that Q turns off, Q receives base drive through R ,  
turning Q on. This supplies current to the load and the  
2
)
e
P
AC  
C
x (Va Vb  
L
x f  
(2)  
1
2
2
b
For Va  
400 mW.  
Internal Power  
V
20V, f  
1.0 MHz, C  
1000 pF, P  
AC  
b
e
e
e
e
2
L
output swings positive to Va V  
.
BE  
k
Negligible ( 3 mW)  
‘‘0’’ State  
‘‘1’’ State  
(Va Vb  
2
)
e
e
P
int  
x Duty Cycle  
(3)  
R
2
80 mW for Va Vb  
20V, DC  
e
e
20%  
Package Power Dissipation  
e
a
internal  
Total average power  
power.  
transient output power  
Example Calculation  
How many MM506 shift registers can be driven by  
a
TL/F/585211  
DS0025CN driver at 1 MHz using a clock pulse width of 200  
ns, rise time 3050 ns and 16V amplitude over the tempera-  
ture range 0 70 C?  
FIGURE 1. DS0025 Schematic (One-Half Circuit)  
It may be noted that Q must switch off before Q begins to  
supply current, hence high internal transients currents from  
Vb to Va cannot occur.  
1
2
§
§
Power Dissipation:  
At 70 C the DS0025CN can dissipate 870 mW when sol-  
§
dered into printed circuit board.  
Fan-Out Calculation  
The drive capability of the DS0025 is a function of system  
requirements, i.e. speed, ambient temperature, voltage  
swing, drive circuitry, and stray wiring capacity.  
Transient Peak Current Limitation:  
From equation (1), it can be seen that at 16V and 30 ns, the  
maximum load that can be driven is limited to 2800 pF.  
The following equations cover the necessary calculations to  
enable the fan-out to be calculated for any system condi-  
tion.  
Average Internal Power:  
Equation (3), gives an average power of 50 mW at 16V and  
a 20% duty cycle.  
Transient Current  
The maximum peak output current of the DS0025 is given  
as 1.5A. Average transient current required from the driver  
can be calculated from:  
d
For one-half of the DS0025C, 870 mW  
ed.  
2 can be dissipat-  
e
e
a
transient output power.  
435 mW  
385 mW  
50 mW  
C
L
(Va Vb  
)
transient output power.  
e
I
(1)  
t
r
Using equation (2) at 16V, 1 MHz and 350 mW, each half of  
the DS0025CN can drive a 1367 pF load. This is less than  
the load imposed by the transient current limitation of equa-  
tion (1) and so a maximum load of 1367 pF would prevail.  
b
Typical rise times into 1000 pF load is 25 ns. For Va  
V
b
e
e
0.8A.  
20V, I  
From the data sheet for the MM506, the average clock  
pulse load is 80 pF. Therefore the number of devices driven  
is 1367/80 or 17 registers.  
For further information please refer to National Semicon-  
ductors Application Note AN-76.  
4
Physical Dimensions inches (millimeters)  
Order Number DS0025CH  
NS Package Number H08C  
Order Number DS0025CJ  
NS Package Number J08A  
5
Physical Dimensions inches (millimeters) (Continued)  
Order Number DS0025CJ  
NS Package Number J14A  
Order Number DS0025CN  
NS Package Number N08E  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
a
a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
(
(
(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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