DS26F32MWF-QML
更新时间:2024-09-18 13:05:35
品牌:NSC
描述:IC QUAD LINE RECEIVER, CDFP16, CERPACK-16, Line Driver or Receiver
DS26F32MWF-QML 概述
IC QUAD LINE RECEIVER, CDFP16, CERPACK-16, Line Driver or Receiver 线路驱动器或接收器
DS26F32MWF-QML 规格参数
生命周期: | Obsolete | 包装说明: | DFP, |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.16 |
输入特性: | DIFFERENTIAL SCHMITT TRIGGER | 接口集成电路类型: | LINE RECEIVER |
接口标准: | EIA-422; EIA-423; FED STD 1020; FED STD 1030 | JESD-30 代码: | R-GDFP-F16 |
功能数量: | 4 | 端子数量: | 16 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DFP |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
认证状态: | Not Qualified | 最大接收延迟: | 31 ns |
接收器位数: | 4 | 筛选级别: | MIL-STD-883 |
座面最大高度: | 2.032 mm | 最大供电电压: | 5.5 V |
最小供电电压: | 4.5 V | 标称供电电压: | 5 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子形式: | FLAT |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 6.35 mm | Base Number Matches: | 1 |
DS26F32MWF-QML 数据手册
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PDF下载January 1996
DS26F32C/DS26F32M
Quad Differential Line Receiver
General Description
Features
Y
Military temperature range
The DS26F32 is a quad differential line receiver designed to
meet the requirements of EIA Standards RS-422 and RS-
423, and Federal Standards 1020 and 1030 for balanced
and unbalanced digital data transmission.
Y
g
Input voltage range of
7.0V (differential or common
g
mode) 0.2V sensitivity over the input voltage range
Meets all the requirements of EIA standards RS-422
and RS-423
Y
The DS26F32 offers improved performance due to the use
of state-of-the-art L-FAST bipolar technology. The L-FAST
technology allows for higher speeds and lower currents by
utilizing extremely short gate delay times. Thus, the
DS26F32 features lower power, extended temperature
range, and improved specifications.
Y
Y
Y
Y
High input impedance (18k typical)
30 mV input hysteresis
a
Operation from single 5.0V supply
Input pull-down resistor prevents output oscillation on
unused channels
The device features an input sensitivity of 200 mV over the
g
input common mode range of 7.0V. The DS26F32 pro-
vides an enable function common to all four receivers and
Y
Y
TRI-STATE outputs, with choice of complementary en-
ables, for receiving directly onto a data bus
Propagation delay 15 ns typical
TRI-STATE outputs with 8.0 mA sink capability. Also, a
É
fail-safe input/output relationship keeps the outputs high
when the inputs are open.
The DS26F32 offers optimum performance when used with
the DS26F31 Quad Differential Line Driver.
Connection Diagrams
16-Lead DIP
20-Lead Ceramic Leadless Chip Carrier
TL/F/9615–7
Function Table (Each Receiver)
Differential Inputs
Enables
Outputs
e
a
b
b
(V )
IN
V
ID
(V
)
E
E
OUT
IN
t
V
ID
0.2V
H
X
X
L
H
H
TL/F/9615–1
Top View
s
b
V
ID
0.2V
H
X
X
L
L
L
Order Number DS26F32CJ or DS26F32MJ
See NS Package Number J16A
X
L
H
Z
For Complete Military 883 Specifications,
see RETS Datasheet.
e
e
e
H
L
High Level
Low Level
Immaterial
Order Number DS26F32ME/883,
DS26F32MJ/883 or DS26F32MW/883
See NS Package Number E20A, J16A or W16A
X
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C
1996 National Semiconductor Corporation
TL/F/9615
RRD-B30M36/Printed in U. S. A.
http://www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
g
g
Common Mode Voltage Range
Differential Input Voltage
Enable Voltage
25V
25V
7.0V
Storage Temperature Range
Ceramic DIP
Output Sink Current
50 mA
b
a
175 C
65 C to
§
§
Operating Temperature Range
DS26F32M
DS26F32C
Operating Range
DS26F32C
Temperature
Supply Voltage
b
a
a
55 C to 125 C
§
§
0 C to 70 C
§
§
a
0 C to 70 C
§
§
4.75V to 5.25V
Lead Temperature
Ceramic DIP (soldering, 60 sec)
300 C
§
DS26F32M
Temperature
Supply Voltage
Maximum Power Dissipation* at 25 C
Cavity Package
§
b
a
55 C to 125 C
§
§
4.5V to 5.5V
1500 mW
7.0V
Supply Voltage
*Derate cavity package 10 mW/ C above 25 C.
§
§
Electrical Characteristics Over operating range, unless otherwise specified (Notes 2 and 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
s
s
a
b
V
TH
Differential Input Voltage
7.0V
e
V
7.0V,
CM
or V
b
a
g
0.2
0.06
0.2
V
V
V
OL
O
OH
s
V
CM
s
a
b
R
I
Input Resistance
15V
15V,
14
18
kX
One Input AC Ground
e a
Other Input 15V
I
Input Current (under Test)
V
I
15V,
I
2.3
s
s
s
s
b
a
a
V
V
15V
15V
I
mA
e b
Other Input 15V
V
I
15V,
b
2.8
b
I
e
e a
a
0 C to 70 C
V
V
Output Voltage HIGH
Output Voltage LOW
V
Min,
§
§
OH
CC
DV
2.8
2.5
3.4
3.4
1.0V,
e
I
V
V
V
0.8V,
ENABLE
e b
b
a
55 C to 125 C
§
§
I
440 mA
OH
e
e b
e
e
V
CC
Min,
I
I
4.0 mA
8.0 mA
0.4
OL
OL
DV
1.0V,
e
I
0.45
0.8
OL
V
0.8V
ENABLE
V
V
V
Enable Voltage LOW
Enable Voltage HIGH
Enable Clamp Voltage
V
V
V
IL
2.0
IH
IC
e
e
e b
b
V
V
Min, I
Max
18 mA
1.5
CC
I
e
e
I
Off State (High Impedance)
Output Current
V
O
V
O
2.4V
0.4V
20
OZ
CC
mA
b
20
e
b
b
0.36
I
I
I
I
Enable Current LOW
V
V
V
V
0.4V
0.2
0.5
1.0
mA
mA
mA
IL
IH
I
I
I
I
e
e
Enable Current HIGH
2.7V
5.5V
10
50
Enable Input High Current
Output Short Circuit Current
e
e
Max, (Note 4)
0V, V
OS
O
CC
b
b
b
85
15
50
mA
e a
DV
1.0V
Max, All V
I
I
e
e
GND,
I
Supply Current
Input Hysteresis
V
CC
CC
30
30
50
mA
mV
Outputs Disabled
e
e
e
0V
CM
V
T
A
25 C, V
§
5.0V, V
HYST
CC
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation.
b
25 C.
a
a
Note 2: Unless otherwise specified min/max limits apply across the 55 C to 125 C temperature range for the DS26F32M and across the 0 C to 70 C range
§
§
§
§
e
e
for the DS26F32C. All typicals are given for V
CC
5V and T
§
Note 3: All currents into the device pins are positive; all currents out of the device pins are negative. All voltages are reference to ground unless otherwise
A
specified.
Note 4: Only one output at a time should be shorted.
http://www.national.com
2
e
e
25 C
Switching Characteristics V
5.0V, T
§
CC
A
Symbol
Parameter
Conditions
Min
Typ
15
15
14
15
13
12
Max
22
Units
ns
e
e
e
t
t
t
t
t
t
Input to Output
Input to Output
Enable to Output
Enable to Output
Enable to Output
Enable to Output
C
L
C
L
C
L
15 pF
5 pF
PLH
PHL
LZ
Figures 2,3
Figures 2,4
22
ns
18
ns
20
ns
HZ
ZL
15 pF
18
ns
16
ns
ZH
TL/F/9615–2
FIGURE 1. Logic Symbol
TL/F/9615–4
TL/F/9615–3
FIGURE 2. Load Test Circuit for Three-State Outputs
FIGURE 3. Propagation Delay (Notes 1, 2 and 3)
Note 1: Diagram shown for ENABLE Low.
Note 2: S1 and S2 of Load Circuit are closed except where shown.
s
s
e
50X, t
r
Note 3: Pulse Generator of all Pulses: Rate
1.0 MHz, Z
O
s
6.0 ns, t
6.0 ns.
Note 4: All diodes are IN916 or IN3064.
Note 5: C includes probe and jig capacitance.
f
L
TL/F/9615–5
FIGURE 4. Enable and Disable Times (Notes 1, 2 and 3)
3
http://www.national.com
Typical Application
TL/F/9615–6
FIGURE 5
Physical Dimensions inches (millimeters)
Order Number DS26F32ME/883
NS Package Number E20A
http://www.national.com
4
Physical Dimensions inches (millimeters) (Continued)
Ceramic Dual-In-Line Package (J)
Order Number DS26F32CJ, DS26F32MJ or DS26F32MJ/883
NS Package Number J16A
5
http://www.national.com
Physical Dimensions inches (millimeters) (Continued)
Order Number DS26F32MW/883
NS Package Number W16A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Corporation
National Semiconductor
Europe
National Semiconductor
Hong Kong Ltd.
National Semiconductor
Japan Ltd.
a
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
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@
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a
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a
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a
Fran3ais Tel: 49 (0) 180-532 93 58
a
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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