DS26F32MW [NSC]

Quad Differential Line Receiver; 四路差动线路接收器
DS26F32MW
型号: DS26F32MW
厂家: National Semiconductor    National Semiconductor
描述:

Quad Differential Line Receiver
四路差动线路接收器

文件: 总6页 (文件大小:136K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
January 1996  
DS26F32C/DS26F32M  
Quad Differential Line Receiver  
General Description  
Features  
Y
Military temperature range  
The DS26F32 is a quad differential line receiver designed to  
meet the requirements of EIA Standards RS-422 and RS-  
423, and Federal Standards 1020 and 1030 for balanced  
and unbalanced digital data transmission.  
Y
g
Input voltage range of  
7.0V (differential or common  
g
mode) 0.2V sensitivity over the input voltage range  
Meets all the requirements of EIA standards RS-422  
and RS-423  
Y
The DS26F32 offers improved performance due to the use  
of state-of-the-art L-FAST bipolar technology. The L-FAST  
technology allows for higher speeds and lower currents by  
utilizing extremely short gate delay times. Thus, the  
DS26F32 features lower power, extended temperature  
range, and improved specifications.  
Y
Y
Y
Y
High input impedance (18k typical)  
30 mV input hysteresis  
a
Operation from single 5.0V supply  
Input pull-down resistor prevents output oscillation on  
unused channels  
The device features an input sensitivity of 200 mV over the  
g
input common mode range of 7.0V. The DS26F32 pro-  
vides an enable function common to all four receivers and  
Y
Y
TRI-STATE outputs, with choice of complementary en-  
ables, for receiving directly onto a data bus  
Propagation delay 15 ns typical  
TRI-STATE outputs with 8.0 mA sink capability. Also, a  
É
fail-safe input/output relationship keeps the outputs high  
when the inputs are open.  
The DS26F32 offers optimum performance when used with  
the DS26F31 Quad Differential Line Driver.  
Connection Diagrams  
16-Lead DIP  
20-Lead Ceramic Leadless Chip Carrier  
TL/F/9615–7  
Function Table (Each Receiver)  
Differential Inputs  
Enables  
Outputs  
e
a
b
b
(V )  
IN  
V
ID  
(V  
)
E
E
OUT  
IN  
t
V
ID  
0.2V  
H
X
X
L
H
H
TL/F/9615–1  
Top View  
s
b
V
ID  
0.2V  
H
X
X
L
L
L
Order Number DS26F32CJ or DS26F32MJ  
See NS Package Number J16A  
X
L
H
Z
For Complete Military 883 Specifications,  
see RETS Datasheet.  
e
e
e
H
L
High Level  
Low Level  
Immaterial  
Order Number DS26F32ME/883,  
DS26F32MJ/883 or DS26F32MW/883  
See NS Package Number E20A, J16A or W16A  
X
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
C
1996 National Semiconductor Corporation  
TL/F/9615  
RRD-B30M36/Printed in U. S. A.  
http://www.national.com  
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
g
g
Common Mode Voltage Range  
Differential Input Voltage  
Enable Voltage  
25V  
25V  
7.0V  
Storage Temperature Range  
Ceramic DIP  
Output Sink Current  
50 mA  
b
a
175 C  
65 C to  
§
§
Operating Temperature Range  
DS26F32M  
DS26F32C  
Operating Range  
DS26F32C  
Temperature  
Supply Voltage  
b
a
a
55 C to 125 C  
§
§
0 C to 70 C  
§
§
a
0 C to 70 C  
§
§
4.75V to 5.25V  
Lead Temperature  
Ceramic DIP (soldering, 60 sec)  
300 C  
§
DS26F32M  
Temperature  
Supply Voltage  
Maximum Power Dissipation* at 25 C  
Cavity Package  
§
b
a
55 C to 125 C  
§
§
4.5V to 5.5V  
1500 mW  
7.0V  
Supply Voltage  
*Derate cavity package 10 mW/ C above 25 C.  
§
§
Electrical Characteristics Over operating range, unless otherwise specified (Notes 2 and 3)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
s
s
a
b
V
TH  
Differential Input Voltage  
7.0V  
e
V
7.0V,  
CM  
or V  
b
a
g
0.2  
0.06  
0.2  
V
V
V
OL  
O
OH  
s
V
CM  
s
a
b
R
I
Input Resistance  
15V  
15V,  
14  
18  
kX  
One Input AC Ground  
e a  
Other Input 15V  
I
Input Current (under Test)  
V
I
15V,  
I
2.3  
s
s
s
s
b
a
a
V
V
15V  
15V  
I
mA  
e b  
Other Input 15V  
V
I
15V,  
b
2.8  
b
I
e
e a  
a
0 C to 70 C  
V
V
Output Voltage HIGH  
Output Voltage LOW  
V
Min,  
§
§
OH  
CC  
DV  
2.8  
2.5  
3.4  
3.4  
1.0V,  
e
I
V
V
V
0.8V,  
ENABLE  
e b  
b
a
55 C to 125 C  
§
§
I
440 mA  
OH  
e
e b  
e
e
V
CC  
Min,  
I
I
4.0 mA  
8.0 mA  
0.4  
OL  
OL  
DV  
1.0V,  
e
I
0.45  
0.8  
OL  
V
0.8V  
ENABLE  
V
V
V
Enable Voltage LOW  
Enable Voltage HIGH  
Enable Clamp Voltage  
V
V
V
IL  
2.0  
IH  
IC  
e
e
e b  
b
V
V
Min, I  
Max  
18 mA  
1.5  
CC  
I
e
e
I
Off State (High Impedance)  
Output Current  
V
O
V
O
2.4V  
0.4V  
20  
OZ  
CC  
mA  
b
20  
e
b
b
0.36  
I
I
I
I
Enable Current LOW  
V
V
V
V
0.4V  
0.2  
0.5  
1.0  
mA  
mA  
mA  
IL  
IH  
I
I
I
I
e
e
Enable Current HIGH  
2.7V  
5.5V  
10  
50  
Enable Input High Current  
Output Short Circuit Current  
e
e
Max, (Note 4)  
0V, V  
OS  
O
CC  
b
b
b
85  
15  
50  
mA  
e a  
DV  
1.0V  
Max, All V  
I
I
e
e
GND,  
I
Supply Current  
Input Hysteresis  
V
CC  
CC  
30  
30  
50  
mA  
mV  
Outputs Disabled  
e
e
e
0V  
CM  
V
T
A
25 C, V  
§
5.0V, V  
HYST  
CC  
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices  
should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation.  
b
25 C.  
a
a
Note 2: Unless otherwise specified min/max limits apply across the 55 C to 125 C temperature range for the DS26F32M and across the 0 C to 70 C range  
§
§
§
§
e
e
for the DS26F32C. All typicals are given for V  
CC  
5V and T  
§
Note 3: All currents into the device pins are positive; all currents out of the device pins are negative. All voltages are reference to ground unless otherwise  
A
specified.  
Note 4: Only one output at a time should be shorted.  
http://www.national.com  
2
e
e
25 C  
Switching Characteristics V  
5.0V, T  
§
CC  
A
Symbol  
Parameter  
Conditions  
Min  
Typ  
15  
15  
14  
15  
13  
12  
Max  
22  
Units  
ns  
e
e
e
t
t
t
t
t
t
Input to Output  
Input to Output  
Enable to Output  
Enable to Output  
Enable to Output  
Enable to Output  
C
L
C
L
C
L
15 pF  
5 pF  
PLH  
PHL  
LZ  
Figures 2,3  
Figures 2,4  
22  
ns  
18  
ns  
20  
ns  
HZ  
ZL  
15 pF  
18  
ns  
16  
ns  
ZH  
TL/F/9615–2  
FIGURE 1. Logic Symbol  
TL/F/9615–4  
TL/F/9615–3  
FIGURE 2. Load Test Circuit for Three-State Outputs  
FIGURE 3. Propagation Delay (Notes 1, 2 and 3)  
Note 1: Diagram shown for ENABLE Low.  
Note 2: S1 and S2 of Load Circuit are closed except where shown.  
s
s
e
50X, t  
r
Note 3: Pulse Generator of all Pulses: Rate  
1.0 MHz, Z  
O
s
6.0 ns, t  
6.0 ns.  
Note 4: All diodes are IN916 or IN3064.  
Note 5: C includes probe and jig capacitance.  
f
L
TL/F/9615–5  
FIGURE 4. Enable and Disable Times (Notes 1, 2 and 3)  
3
http://www.national.com  
Typical Application  
TL/F/9615–6  
FIGURE 5  
Physical Dimensions inches (millimeters)  
Order Number DS26F32ME/883  
NS Package Number E20A  
http://www.national.com  
4
Physical Dimensions inches (millimeters) (Continued)  
Ceramic Dual-In-Line Package (J)  
Order Number DS26F32CJ, DS26F32MJ or DS26F32MJ/883  
NS Package Number J16A  
5
http://www.national.com  
Physical Dimensions inches (millimeters) (Continued)  
Order Number DS26F32MW/883  
NS Package Number W16A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax: 49 (0) 180-530 85 86  
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2308  
Fax: 81-043-299-2408  
@
Email: europe.support nsc.com  
a
Deutsch Tel: 49 (0) 180-530 85 85  
a
English Tel: 49 (0) 180-532 78 32  
a
Fran3ais Tel: 49 (0) 180-532 93 58  
a
Italiano Tel: 49 (0) 180-534 16 80  
http://www.national.com  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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