LM4990LDX [NSC]

IC 2 W, 1 CHANNEL, AUDIO AMPLIFIER, DSO10, LLP-10, Audio/Video Amplifier;
LM4990LDX
型号: LM4990LDX
厂家: National Semiconductor    National Semiconductor
描述:

IC 2 W, 1 CHANNEL, AUDIO AMPLIFIER, DSO10, LLP-10, Audio/Video Amplifier

放大器
文件: 总20页 (文件大小:1155K)
中文:  中文翻译
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National Semiconductor is now part of  
Texas Instruments.  
Search http://www.ti.com/ for the latest technical  
information and details on our current products and services.  
October 2004  
LM4990  
2 Watt Audio Power Amplifier with Selectable Shutdown  
Logic Level  
General Description  
Key Specifications  
The LM4990 is an audio power amplifier primarily designed  
for demanding applications in mobile phones and other por-  
table communication device applications. It is capable of  
delivering 1.25 watts of continuous average power to an 8  
BTL load and 2 watts of continuous average power (LD and  
MH only) to a 4BTL load with less than 1% distortion  
(THD+N+N) from a 5VDC power supply.  
j
Improved PSRR at 217Hz & 1KHz  
62dB  
j
Power Output at 5.0V, 1%  
THD+N,  
4(LD and MH only)  
Power Output at 5.0V, 1% THD+N, 8Ω  
2W (typ)  
j
j
j
j
1.25W (typ)  
Power Output at 3.0V, 1% THD+N, 4600mW (typ)  
Power Output at 3.0V, 1% THD+N, 8425mW (typ)  
Boomer audio power amplifiers were designed specifically to  
provide high quality output power with a minimal amount of  
external components. The LM4990 does not require output  
coupling capacitors or bootstrap capacitors, and therefore is  
ideally suited for mobile phone and other low voltage appli-  
cations where minimal power consumption is a primary re-  
quirement.  
Shutdown Current  
0.1µA (typ)  
Features  
n Available in space-saving packages: LLP, Exposed-DAP  
TSSOP, MSOP, and ITL  
The LM4990 features a low-power consumption shutdown  
mode. To facilitate this, Shutdown may be enabled by either  
logic high or low depending on mode selection. Driving the  
shutdown mode pin either high or low enables the shutdown  
pin to be driven in a likewise manner to enable shutdown.  
n Ultra low current shutdown mode  
n Improved pop & click circuitry eliminates noise during  
turn-on and turn-off transitions  
n 2.2 - 5.5V operation  
The LM4990 contains advanced pop & click circuitry which  
eliminates noise which would otherwise occur during turn-on  
and turn-off transitions.  
n No output coupling capacitors, snubber networks or  
bootstrap capacitors required  
n Unity-gain stable  
The LM4990 is unity-gain stable and can be configured by  
external gain-setting resistors.  
n External gain configuration capability  
n User selectable shutdown High or Low logic Level  
Applications  
n Mobile Phones  
n PDAs  
n Portable electronic devices  
Connection Diagrams  
Mini Small Outline (MSOP) Package  
MSOP Marking  
20051071  
Top View  
Z - Plant Code  
200510B9  
Top View  
Order Number LM4990MM  
See NS Package Number MUA08A  
X - Date Code  
TT - Die Traceability  
G - Boomer Family  
A5 - LM4990MM  
Boomer® is a registered trademark of National Semiconductor Corporation.  
© 2004 National Semiconductor Corporation  
DS200510  
www.national.com  
Connection Diagrams (Continued)  
LLP Package  
LLP Marking  
200510B4  
Top View  
Z - Plant Code  
XY - Date Code  
TT - Die Traceability  
Bottom Line - Part Number  
200510B3  
Top View  
Order Number LM4990LD  
See NS Package Number LDA10B  
Exposed-DAP TSSOP Package  
20051096  
Top View  
Order Number LM4990MH  
See NS Package Number MXF10A  
9 Bump micro SMD  
9 Bump micro SMD Marking  
200510C1  
Top View  
X — Date Code  
T — Die Traceability  
G — Boomer Family  
D2 — LM4990ITL  
200510C0  
Top View  
Order Number LM4990ITL, LM4990ITLX  
See NS Package Number TLA09ZZA  
www.national.com  
2
Package  
LD  
MH  
Selectable  
2W  
MM  
Low  
ITL  
Low  
Shutdown Mode  
Typical Power Output at 5V,  
1% THD+N  
Selectable  
2W  
1.25W  
(RL = 8)  
1.25W  
(RL = 8)  
(RL = 4)  
(RL = 4)  
. A SD_MODE select pin determines the Shutdown Mode for the LD and MH packages, whether it is an Asserted High or an Asserted Low device, to activate  
shutdown.  
. The SD_MODE select pin is not available with the MM and ITL packaged devices. Shutdown occurs only with a low assertion.  
Typical Application  
20051001  
Note: MM and ITL packaged devices are active low only; Shutdown Mode pin is internally tied to GND.  
FIGURE 1. Typical Audio Amplifier Application Circuit (LD and MH)  
200510C4  
FIGURE 2. Typical Audio Amplifier Application Circuit (ITL and MM)  
3
www.national.com  
Absolute Maximum Ratings (Note 2)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
θJA (MSOP)  
190˚C/W  
180˚C/W  
θJA (9 Bump micro SMD) (Note 15)  
θJA (LLP)  
63˚C/W (Note 13)  
12˚C/W (Note 13)  
θJC (LLP)  
Supply Voltage (Note 11)  
Storage Temperature  
Input Voltage  
6.0V  
−65˚C to +150˚C  
−0.3V to VDD +0.3V  
Internally Limited  
2000V  
Soldering Information  
See AN-1187 "Leadless  
Leadframe Package (LLP)."  
Power Dissipation (Notes 3, 12)  
ESD Susceptibility (Note 4)  
ESD Susceptibility (Note 5)  
Junction Temperature  
Thermal Resistance  
Operating Ratings  
Temperature Range  
TMIN TA TMAX  
Supply Voltage  
200V  
150˚C  
−40˚C TA 85˚C  
2.2V VDD 5.5V  
θJC (MSOP)  
56˚C/W  
Electrical Characteristics VDD = 5V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25˚C.  
LM4990  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
Limit  
(Note 6)  
(Notes 7, 9)  
VIN = 0V, Io = 0A, No Load  
VIN = 0V, Io = 0A, 8Load  
VSD = VSD Mode (Note 8)  
VSD MODE = VDD  
3
7
mA (max)  
IDD  
Quiescent Power Supply Current  
4
10  
2.0  
mA (max)  
ISD  
Shutdown Current  
0.1  
1.5  
1.3  
1.5  
1.3  
7
µA (max)  
VSDIH  
VSDIL  
VSDIH  
VSDIL  
VOS  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Output Offset Voltage  
V
VSD MODE = VDD  
V
V
VSD MODE = GND  
VSD MODE = GND  
V
50  
9.7  
7.0  
0.9  
mV (max)  
k(max)  
k(min)  
W (min)  
W
ROUT  
Resistor Output to GND (Note 10)  
8.5  
Output Power (8)  
(4) (Notes 13, 14)  
Wake-up time  
THD+N = 1% (max); f = 1kHz  
THD+N = 1% (max); f = 1kHz  
1.25  
2
Po  
TWU  
100  
0.2  
ms  
THD+N+N Total Harmonic Distortion+Noise  
Po = 0.5Wrms; f = 1kHz  
Vripple = 200mV sine p-p  
Input terminated with 10Ω  
%
60 (f =  
PSRR Power Supply Rejection Ratio  
217Hz)  
55  
dB (min)  
64 (f = 1kHz)  
Electrical Characteristics VDD = 3V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25˚C.  
LM4990  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
Limit  
(Note 6)  
(Notes 7, 9)  
VIN = 0V, Io = 0A, No Load  
VIN = 0V, Io = 0A, 8Load  
VSD = VSD Mode (Note 8)  
VSD MODE = VDD  
2
7
9
mA (max)  
mA (max)  
µA (max)  
V
IDD  
Quiescent Power Supply Current  
3
ISD  
Shutdown Current  
0.1  
1.1  
0.9  
1.3  
1.0  
7
2.0  
VSDIH  
VSDIL  
VSDIH  
VSDIL  
VOS  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Output Offset Voltage  
VSD MODE = VDD  
V
VSD MODE = GND  
V
VSD MODE = GND  
V
50  
9.7  
7.0  
mV (max)  
k(max)  
k(min)  
ROUT  
Resistor Output to GND (Note 10)  
8.5  
www.national.com  
4
Electrical Characteristics VDD = 3V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA  
25˚C. (Continued)  
=
LM4990  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
(Note 6)  
425  
Limit  
(Notes 7, 9)  
Output Power (8)  
(4)  
THD+N = 1% (max); f = 1kHz  
THD+N = 1% (max); f = 1kHz  
mW  
mW  
ms  
%
Po  
600  
TWU  
Wake-up time  
75  
THD+N+N Total Harmonic Distortion+Noise  
Po = 0.25Wrms; f = 1kHz  
Vripple = 200mV sine p-p  
Input terminated with 10Ω  
0.1  
62 (f =  
PSRR  
Power Supply Rejection Ratio  
217Hz)  
55  
dB (min)  
68 (f = 1kHz)  
Electrical Characteristics VDD = 2.6V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25˚C.  
LM4990  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
(Note 6)  
2.0  
Limit  
(Notes 7, 9)  
VIN = 0V, Io = 0A, No Load  
VIN = 0V, Io = 0A, 8Load  
VSD = VSD Mode (Note 8)  
VSD MODE = VDD  
mA  
IDD  
Quiescent Power Supply Current  
3.0  
mA  
ISD  
Shutdown Current  
0.1  
µA  
VSDIH  
VSDIL  
VSDIH  
VSDIL  
VOS  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Output Offset Voltage  
1.0  
V
VSD MODE = VDD  
0.9  
V
V
VSD MODE = GND  
1.2  
VSD MODE = GND  
1.0  
V
5
50  
9.7  
7.0  
mV (max)  
k(max)  
k(min)  
ROUT  
Resistor Output to GND (Note 10)  
8.5  
Po  
Output Power ( 8)  
( 4)  
THD+N = 1% (max); f = 1kHz  
THD+N = 1% (max); f = 1kHz  
300  
400  
70  
mW  
TWU  
Wake-up time  
ms  
%
THD+N+N Total Harmonic Distortion+Noise  
Po = 0.15Wrms; f = 1kHz  
Vripple = 200mV sine p-p  
Input terminated with 10Ω  
0.1  
51 (f =  
PSRR Power Supply Rejection Ratio  
217Hz)  
dB  
51 (f = 1kHz)  
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.  
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which  
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit  
is given, however, the typical value is a good indication of device performance.  
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
, θ , and the ambient temperature T . The maximum  
A
JMAX JA  
allowable power dissipation is P  
= (T  
–T )/θ or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4990, see power derating  
DMAX  
JMAX A JA  
curves for additional information.  
Note 4: Human body model, 100pF discharged through a 1.5kresistor.  
Note 5: Machine Model, 220pF – 240pF discharged through all pins.  
Note 6: Typicals are measured at 25˚C and represent the parametric norm.  
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).  
Note 8: For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase I by a maximum of 2µA.  
SD  
Note 9: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.  
Note 10: R  
is measured from the output pin to ground. This value represents the parallel combination of the 10koutput resistors and the two 20kresistors.  
ROUT  
Note 11: If the product is in Shutdown mode and V exceeds 6V (to a max of 8V V ), then most of the excess current will flow through the ESD protection circuits.  
DD  
DD  
If the source impedance limits the current to a max of 10mA, then the device will be protected. If the device is enabled when V is greater than 5.5V and less than  
DD  
6.5V, no damage will occur, although operation life will be reduced. Operation above 6.5V with no current limit will result in permanent damage.  
Note 12: Maximum power dissipation in the device (P  
) occurs at an output power level significantly below full output power. P  
can be calculated using  
DMAX  
DMAX  
Equation 1 shown in the Application Information section. It may also be obtained from the power dissipation graphs.  
5
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Electrical Characteristics VDD = 2.6V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA  
25˚C. (Continued)  
=
Note 13: The Exposed-DAP of the LDA10B package should be electrically connected to GND or an electrically isolated copper area. the LM4990LD demo board  
has the Exposed-DAP connected to GND with a PCB area of 86.7mils x 585mils (2.02mm x 14.86mm) on the copper top layer and 550mils x 710mils (13.97mm  
x 18.03mm) on the copper bottom layer.  
Note 14: The thermal performance of the LLP and exposed-DAP TSSOP packages when used with the exposed-DAP connected to a thermal plane is sufficient for  
driving 4loads. The MSOP and ITL packages do not have the thermal performance necessary for driving 4loads with a 5V supply and is not recommended for  
this application.  
Note 15: All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance. All bumps must be connected to achieve  
specified thermal resistance.  
External Components Description  
See (Figure 1)  
Components  
Functional Description  
1.  
Ri  
Inverting input resistance which sets the closed-loop gain in conjunction with Rf. This resistor also forms a  
high pass filter with Ci at fC= 1/(2π RiCi).  
2.  
Ci  
Input coupling capacitor which blocks the DC voltage at the amplifiers input terminals. Also creates a  
highpass filter with Ri at fc = 1/(2π RiCi). Refer to the section, Proper Selection of External Components,  
for an explanation of how to determine the value of Ci.  
3.  
4.  
Rf  
Feedback resistance which sets the closed-loop gain in conjunction with Ri.  
CS  
Supply bypass capacitor which provides power supply filtering. Refer to the Power Supply Bypassing  
section for information concerning proper placement and selection of the supply bypass capacitor.  
Bypass pin capacitor which provides half-supply filtering. Refer to the section, Proper Selection of External  
Components, for information concerning proper placement and selection of CB.  
5.  
CB  
Typical Performance Characteristics  
LD and MH Specific Characteristics  
THD+N+N vs Frequency  
THD+N+N vs Output Power  
VDD = 5V, RL = 4, and PO = 1W  
VDD = 5V, RL = 4, and f = 1 kHz  
20051030  
20051031  
www.national.com  
6
Typical Performance Characteristics  
THD+N+N vs Frequency  
THD+N+N vs Frequency  
VDD = 5V, RL = 8, and PO = 500mW  
VDD = 3V, RL = 4, and PO = 500mW  
20051032  
20051033  
THD+N+N vs Frequency  
THD+N+N vs Frequency  
VDD = 3V, RL = 8, and PO = 250mW  
VDD = 2.6V, RL = 4, and PO = 150mW  
20051034  
20051083  
THD+N+N vs Output Power  
THD+N+N vs Output Power  
VDD = 2.6V, RL = 8, and PO = 150mW  
VDD = 5V, RL = 8, and f = 1kHz  
20051084  
20051085  
7
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Typical Performance Characteristics (Continued)  
THD+N+N vs Output Power  
THD+N+N vs Output Power  
VDD = 3V, RL = 4, and f = 1kHz  
VDD = 3V, RL = 8, and f = 1kHz  
20051002  
20051003  
THD+N+N vs Output Power  
THD+N+N vs Output Power  
VDD = 2.6V, RL = 4, and f = 1kHz  
VDD = 2.6V, RL = 8, and f = 1kHz  
20051004  
20051005  
Power Supply Rejection Ratio (PSRR) vs Frequency  
Power Supply Rejection Ratio (PSRR) vs Frequency  
VDD = 5V, RL = 8, input 10terminated  
VDD = 5V, RL = 8, input floating  
20051006  
20051007  
www.national.com  
8
Typical Performance Characteristics (Continued)  
Power Supply Rejection Ratio (PSRR) vs Frequency  
Power Supply Rejection Ratio (PSRR) vs Frequency  
VDD = 3V, RL = 8, input floating  
VDD = 3V, RL = 8, input 10terminated  
20051086  
20051087  
Power Supply Rejection Ratio (PSRR) vs Frequency  
Power Supply Rejection Ratio (PSRR) vs Frequency  
VDD = 2.6V, RL = 8, input 10terminated  
VDD = 2.6V, RL = 8, Input Floating  
20051088  
20051089  
Noise Floor, 5V, 8Ω  
80kHz Bandwidth, Input to GND  
Open Loop Frequency Response, 5V  
20051092  
20051095  
9
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Typical Performance Characteristics (Continued)  
Power Dissipation vs  
Power Dissipation vs  
Output Power, VDD = 5V  
Output Power, VDD = 3V  
200510B5  
200510B6  
Power Dissipation vs  
Output Power, VDD = 2.6V  
Shutdown Hysteresis Voltage  
VDD = 5V, SD Mode = VDD  
200510B7  
200510A0  
Shutdown Hysteresis Voltage  
VDD = 5V, SD Mode = GND  
Shutdown Hysteresis Voltage  
VDD = 3V, SD Mode = VDD  
200510A1  
200510A2  
www.national.com  
10  
Typical Performance Characteristics (Continued)  
Shutdown Hysteresis Voltage  
VDD = 3V, SD Mode = GND  
Shutdown Hysteresis Voltage  
VDD = 2.6V, SD Mode = VDD  
200510A3  
200510A4  
200510B8  
200510A7  
Shutdown Hysteresis Voltage  
VDD = 2.6V, SD Mode = GND  
Output Power vs  
Supply Voltage, RL = 4Ω  
200510A5  
Output Power vs  
Supply Voltage, RL = 8Ω  
Output Power vs  
Supply Voltage, RL = 16Ω  
200510A6  
11  
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Typical Performance Characteristics (Continued)  
Output Power vs  
Supply Voltage, RL = 32Ω  
Frequency Response vs  
Input Capacitor Size  
200510A8  
20051054  
www.national.com  
12  
especially effective when connected to VDD, GND, and the  
output pins. Refer to the application information on the  
LM4990 reference design board for an example of good heat  
sinking. If TJMAX still exceeds 150˚C, then additional  
changes must be made. These changes can include re-  
duced supply voltage, higher load impedance, or reduced  
ambient temperature. Internal power dissipation is a function  
of output power. Refer to the Typical Performance Charac-  
teristics curves for power dissipation information for differ-  
ent output powers and output loading.  
Application Information  
BRIDGE CONFIGURATION EXPLANATION  
As shown in Figure 1, the LM4990 has two internal opera-  
tional amplifiers. The first amplifier’s gain is externally con-  
figurable, while the second amplifier is internally fixed in a  
unity-gain, inverting configuration. The closed-loop gain of  
the first amplifier is set by selecting the ratio of Rf to Ri while  
the second amplifier’s gain is fixed by the two internal 20kΩ  
resistors. Figure 1 shows that the output of amplifier one  
serves as the input to amplifier two which results in both  
amplifiers producing signals identical in magnitude, but out  
of phase by 180˚. Consequently, the differential gain for the  
IC is  
POWER SUPPLY BYPASSING  
As with any amplifier, proper supply bypassing is critical for  
low noise performance and high power supply rejection. The  
capacitor location on both the bypass and power supply pins  
should be as close to the device as possible. Typical appli-  
cations employ a 5V regulator with 10µF tantalum or elec-  
trolytic capacitor and a ceramic bypass capacitor which aid  
in supply stability. This does not eliminate the need for  
bypassing the supply nodes of the LM4990. The selection of  
a bypass capacitor, especially CB, is dependent upon PSRR  
requirements, click and pop performance (as explained in  
the section, Proper Selection of External Components),  
system cost, and size constraints.  
AVD= 2 *(Rf/Ri)  
By driving the load differentially through outputs Vo1 and  
Vo2, an amplifier configuration commonly referred to as  
“bridged mode” is established. Bridged mode operation is  
different from the classical single-ended amplifier configura-  
tion where one side of the load is connected to ground.  
A bridge amplifier design has a few distinct advantages over  
the single-ended configuration, as it provides differential  
drive to the load, thus doubling output swing for a specified  
supply voltage. Four times the output power is possible as  
compared to a single-ended amplifier under the same con-  
ditions. This increase in attainable output power assumes  
that the amplifier is not current limited or clipped. In order to  
choose an amplifier’s closed-loop gain without causing ex-  
cessive clipping, please refer to the Audio Power Amplifier  
Design section.  
SHUTDOWN FUNCTION  
In order to reduce power consumption while not in use, the  
LM4990 contains shutdown circuitry that is used to turn off  
the amplifier’s bias circuitry. In addition, the LM4990 con-  
tains a Shutdown Mode pin (LD and MH packages only),  
allowing the designer to designate whether the part will be  
driven into shutdown with a high level logic signal or a low  
level logic signal. This allows the designer maximum flexibil-  
ity in device use, as the Shutdown Mode pin may simply be  
tied permanently to either VDD or GND to set the LM4990 as  
either a "shutdown-high" device or a "shutdown-low" device,  
respectively. The device may then be placed into shutdown  
mode by toggling the Shutdown pin to the same state as the  
Shutdown Mode pin. For simplicity’s sake, this is called  
"shutdown same", as the LM4990 enters shutdown mode  
whenever the two pins are in the same logic state. The MM  
package lacks this Shutdown Mode feature, and is perma-  
nently fixed as a ‘shutdown-low’ device. The trigger point for  
either shutdown high or shutdown low is shown as a typical  
value in the Supply Current vs Shutdown Voltage graphs in  
the Typical Performance Characteristics section. It is best  
to switch between ground and supply for maximum perfor-  
mance. While the device may be disabled with shutdown  
voltages in between ground and supply, the idle current may  
be greater than the typical value of 0.1µA. In either case, the  
shutdown pin should be tied to a definite voltage to avoid  
unwanted state changes.  
A bridge configuration, such as the one used in LM4990,  
also creates a second advantage over single-ended amplifi-  
ers. Since the differential outputs, Vo1 and Vo2, are biased  
at half-supply, no net DC voltage exists across the load. This  
eliminates the need for an output coupling capacitor which is  
required in a single supply, single-ended amplifier configura-  
tion. Without an output coupling capacitor, the half-supply  
bias across the load would result in both increased internal  
IC power dissipation and also possible loudspeaker damage.  
POWER DISSIPATION  
Power dissipation is a major concern when designing a  
successful amplifier, whether the amplifier is bridged or  
single-ended. A direct consequence of the increased power  
delivered to the load by a bridge amplifier is an increase in  
internal power dissipation. Since the LM4990 has two opera-  
tional amplifiers in one package, the maximum internal  
power dissipation is 4 times that of a single-ended amplifier.  
The maximum power dissipation for a given application can  
be derived from the power dissipation graphs or from Equa-  
tion 1.  
In many applications, a microcontroller or microprocessor  
output is used to control the shutdown circuitry, which pro-  
vides a quick, smooth transition to shutdown. Another solu-  
tion is to use a single-throw switch in conjunction with an  
external pull-up resistor (or pull-down, depending on shut-  
down high or low application). This scheme guarantees that  
the shutdown pin will not float, thus preventing unwanted  
state changes.  
PDMAX = 4*(VDD)2/(2π2RL)  
(1)  
It is critical that the maximum junction temperature TJMAX of  
150˚C is not exceeded. TJMAX can be determined from the  
power derating curves by using PDMAX and the PC board foil  
area. By adding copper foil, the thermal resistance of the  
PROPER SELECTION OF EXTERNAL COMPONENTS  
application can be reduced from the free air value of θJA  
,
Proper selection of external components in applications us-  
ing integrated power amplifiers is critical to optimize device  
and system performance. While the LM4990 is tolerant of  
resulting in higher PDMAX values without thermal shutdown  
protection circuitry being activated. Additional copper foil can  
be added to any of the leads connected to the LM4990. It is  
13  
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AUDIO POWER AMPLIFIER DESIGN  
Application Information (Continued)  
A 1W/8Audio Amplifier  
external component combinations, consideration to compo-  
nent values must be used to maximize overall system qual-  
ity.  
Given:  
Power Output  
Load Impedance  
Input Level  
1Wrms  
8Ω  
The LM4990 is unity-gain stable which gives the designer  
maximum system flexibility. The LM4990 should be used in  
low gain configurations to minimize THD+N+N values, and  
maximize the signal to noise ratio. Low gain configurations  
require large input signals to obtain a given output power.  
Input signals equal to or greater than 1Vrms are available  
from sources such as audio codecs. Please refer to the  
section, Audio Power Amplifier Design, for a more com-  
plete explanation of proper gain selection.  
1Vrms  
20kΩ  
Input Impedance  
Bandwidth  
100Hz–20kHz 0.25dB  
A designer must first determine the minimum supply rail to  
obtain the specified output power. By extrapolating from the  
Output Power vs Supply Voltage graphs in the Typical Per-  
formance Characteristics section, the supply rail can be  
easily found.  
Besides gain, one of the major considerations is the closed-  
loop bandwidth of the amplifier. To a large extent, the band-  
width is dictated by the choice of external components  
shown in Figure 1. The input coupling capacitor, Ci, forms a  
first order high pass filter which limits low frequency re-  
sponse. This value should be chosen based on needed  
frequency response for a few distinct reasons.  
5V is a standard voltage in most applications, it is chosen for  
the supply rail. Extra supply voltage creates headroom that  
allows the LM4990 to reproduce peaks in excess of 1W  
without producing audible distortion. At this time, the de-  
signer must make sure that the power supply choice along  
with the output impedance does not violate the conditions  
explained in the Power Dissipation section.  
Selection of Input Capacitor Size  
Large input capacitors are both expensive and space hungry  
for portable designs. Clearly, a certain sized capacitor is  
needed to couple in low frequencies without severe attenu-  
ation. But in many cases the speakers used in portable  
systems, whether internal or external, have little ability to  
reproduce signals below 100Hz to 150Hz. Thus, using a  
large input capacitor may not increase actual system perfor-  
mance.  
Once the power dissipation equations have been addressed,  
the required differential gain can be determined from Equa-  
tion 2.  
(2)  
In addition to system cost and size, click and pop perfor-  
mance is effected by the size of the input coupling capacitor,  
Ci. A larger input coupling capacitor requires more charge to  
reach its quiescent DC voltage (nominally 1/2 VDD). This  
charge comes from the output via the feedback and is apt to  
create pops upon device enable. Thus, by minimizing the  
capacitor size based on necessary low frequency response,  
turn-on pops can be minimized.  
Rf/Ri = AVD/2  
From Equation 2, the minimum AVD is 2.83; use AVD = 3.  
Since the desired input impedance was 20k, and with a  
AVD impedance of 2, a ratio of 1.5:1 of Rf to Ri results in an  
allocation of Ri = 20kand Rf = 30k. The final design step  
is to address the bandwidth requirements which must be  
stated as a pair of −3dB frequency points. Five times away  
from a −3dB point is 0.17dB down from passband response  
which is better than the required 0.25dB specified.  
Besides minimizing the input capacitor size, careful consid-  
eration should be paid to the bypass capacitor value. Bypass  
capacitor, CB, is the most critical component to minimize  
turn-on pops since it determines how fast the LM4990 turns  
on. The slower the LM4990’s outputs ramp to their quiescent  
DC voltage (nominally 1/2 VDD), the smaller the turn-on pop.  
Choosing CB equal to 1.0µF along with a small value of Ci (in  
the range of 0.1µF to 0.39µF), should produce a virtually  
clickless and popless shutdown function. While the device  
will function properly, (no oscillations or motorboating), with  
CB equal to 0.1µF, the device will be much more susceptible  
to turn-on clicks and pops. Thus, a value of CB equal to  
1.0µF is recommended in all but the most cost sensitive  
designs.  
fL = 100Hz/5 = 20Hz  
fH = 20kHz * 5 = 100kHz  
As stated in the External Components section, Ri in con-  
junction with Ci create a highpass filter.  
Ci 1/(2π*20k*20Hz) = 0.397µF; use 0.39µF  
The high frequency pole is determined by the product of the  
desired frequency pole, fH, and the differential gain, AVD  
.
With a AVD = 3 and fH = 100kHz, the resulting GBWP =  
300kHz which is much smaller than the LM4990 GBWP of  
2.5MHz. This figure displays that if a designer has a need to  
design an amplifier with a higher differential gain, the  
LM4990 can still be used without running into bandwidth  
limitations.  
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14  
Application Information (Continued)  
20051024  
FIGURE 3. HIGHER GAIN AUDIO AMPLIFIER  
The LM4990 is unity-gain stable and requires no external  
components besides gain-setting resistors, an input coupling  
capacitor, and proper supply bypassing in the typical appli-  
cation. However, if a closed-loop differential gain of greater  
than 10 is required, a feedback capacitor (C4) may be  
needed as shown in Figure 2 to bandwidth limit the amplifier.  
This feedback capacitor creates a low pass filter that elimi-  
nates possible high frequency oscillations. Care should be  
taken when calculating the -3dB frequency in that an incor-  
rect combination of R3 and C4 will cause rolloff before  
20kHz. A typical combination of feedback resistor and ca-  
pacitor that will not produce audio band high frequency rolloff  
is R3 = 20kand C4 = 25pf. These components result in a  
-3dB point of approximately 320kHz.  
15  
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Application Information (Continued)  
20051029  
FIGURE 4. DIFFERENTIAL AMPLIFIER CONFIGURATION FOR LM4990  
20051025  
FIGURE 5. REFERENCE DESIGN BOARD SCHEMATIC  
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16  
Physical Dimensions inches (millimeters) unless otherwise noted  
MSOP  
Order Number LM4990MM  
NS Package Number MUA08A  
Exposed-DAP TSSOP  
Order Number LM4990MH  
NS Package Number MXF10A  
17  
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
LLP  
Order Number LM4990LD  
NS Package Number LDA10B  
9–Bump micro SMD  
Order Number LM4990ITL, LM4990ITLX  
NS Package Number TLA09ZZA  
X1 = 1.463 0.03 X2 = 1.463 0.03 X3 = 0.600 0.075  
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18  
Notes  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves  
the right at any time without notice to change said circuitry and specifications.  
For the most current product information visit us at www.national.com.  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS  
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and whose failure to perform when  
properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to result  
in a significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
BANNED SUBSTANCE COMPLIANCE  
National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship  
Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned  
Substances’’ as defined in CSP-9-111S2.  
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