LM614_技术文档

May 1998

LM614

Quad Operational Amplifier and Adjustable Reference

General Description

The LM614 consists of four op-amps and a programmable

Features

Op Amp

voltage reference in

a 16-pin package. The op-amp

n Low operating current: 300 µA

n Wide supply voltage range: 4V to 36V

n Wide common-mode range: V⁻to (V⁺− 1.8V)

out-performs most single-supply op-amps by providing

higher speed and bandwidth along with low supply current.

This device was specifically designed to lower cost and

board space requirements in transducer, test, measurement

and data acquisition systems.

±

n Wide differential input voltage:

36V

n Available in plastic package rated for Military

Temperature Range Operation

Combining a stable voltage reference with four wide output

swing op-amps makes the LM614 ideal for single supply

transducers, signal conditioning and bridge driving where

large common-mode-signals are common. The voltage ref-

erence consists of a reliable band-gap design that maintains

low dynamic output impedance (1Ω typical), excellent initial

tolerance (0.6%), and the ability to be programmed from

1.2V to 6.3V via two external resistors. The voltage refer-

ence is very stable even when driving large capacitive loads,

as are commonly encountered in CMOS data acquisition

systems.

Reference

n Adjustable output voltage: 1.2V to 6.3V

n Tight initial tolerance available:

n Wide operating current range: 17 µA to 20 mA

n Tolerant of load capacitance

±

0.6%

Applications

n Transducer bridge driver and signal processing

n Process and mass flow control systems

n Power supply voltage monitor

™

As a member of National’s new Super-Block family, the

n Buffered voltage references for A/D’s

LM614 is a space-saving monolithic alternative to a multichip

solution, offering a high level of integration without sacrificing

performance.

Connection Diagram

DS009326-1

Ordering Information

Reference

Temperature Range

Package

NSC

Tolerance & V_OS

Drawing

Military

−55˚C ≤ T_A≤ +125˚C

LM614AMN

Industrial

−40˚C ≤ T_A≤ +85˚C

LM614AIN

Commercial

0˚C ≤ T_A≤ +70˚C

—

±

@

0.6%

16-pin

Molded DIP

16-pin

N16E

J16A

N16E

M16B

80 ppm/˚C max

V_OS≤ 3.5 mV max

LM614AMJ/883

(Note 13)

—

Ceramic DIP

16-pin

±

@

2.0%

LM614MN

LM614BIN

LM614WM

LM614CN

LM614CWM

150 ppm/˚C max

Molded DIP

16-pin Wide

Surface Mount

V_OS≤ 5.0 mV

—

™

Super-Block is a trademark of National Semiconductor Corporation.

DS009326

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Maximum Junction Temperature

Thermal Resistance, Junction-to-Ambient (Note 4)

N Package

150˚C

100˚C

150˚C

WM Package

Soldering Information (Soldering, 10 seconds)

N Package

Voltage on Any Pins except V_R

(referred to V⁻pin)

260˚C

220˚C

WM Package

(Note 2)

36V (Max)

±

ESD Tolerance (Note 5)

1kV

(Note 3)

−0.3V (Min)

Current through Any Input Pin &

V_RPin

Operating Temperature Range

±

20 mA

Differential Input Voltage

Military and Industrial

Commercial

LM614AI, LM614I, LM614BI

LM614AM, LM614M

LM614C

−40˚C ≤ T_J≤ +85˚C

−55˚C ≤ T_J≤ +125˚C

0˚C ≤ T_J≤ +70˚C

±

36V

32V

Storage Temperature Range

−65˚C ≤ T_J≤ +150˚C

Electrical Characteristics

+

These specifications apply for V⁻GND 0V, V

=

= = =

5V, V_CMV_OUT2.5V, I_R100 µA, FEEDBACK pin shorted to GND,

=

unless otherwise specified. Limits in standard typeface are for T_J25˚C; limits in boldface type apply over the Operating

Temperature Range .

Symbol

Parameter

Conditions

Typical LM614AM

LM614M

LM614BI

LM614I

LM614C

Limits

(Note 7)

1000

Units

(Note 6)

LM614AI

Limits

(Note 7)

=∞

I_S

Total Supply

R_LOAD

,

450

550

2.2

2.9

46

940

1000

2.8

3

µA max

V min

Current

4V ≤ V⁺≤ 36V (32V for LM614C)

1070

V_S

Supply Voltage Range

2.8

3

V min

36

32

V max

43

36

32

OPERATIONAL AMPLIFIER

V_OS1V_OSOver Supply

4V ≤ V⁺≤ 36V

(4V ≤ V⁺≤ 32V for LM614C)

1.5

2.0

1.0

1.5

15

3.5

6.0

3.5

6.0

5.0

7.0

5.0

7.0

mV max

µV/˚C

=

V_OS2

V_OSOver V_CM

V_CM0V through V_CM

(V⁺− 1.8V), V⁺30V

=

Average V_OSDrift

(Note 7)

max

I_B

Input Bias Current

Input Offset Current

10

11

25

30

4

35

40

4

nA max

I_OS

0.2

0.3

5

Average Offset

Drift Current

4

pA/˚C

R_IN

Input Resistance

Differential

1800

3800

5.7

MΩ

pF

Common-Mode

Common-Mode Input

C_IN

e_n

Input Capacitance

Voltage Noise

=

f

100 Hz, Input Referred

=

74

=

I_n

Current Noise

f

58

CMRR

Common-Mode

Rejection Ratio

V⁺30V, 0V ≤ V_CM≤ (V⁺− 1.8V),

95

80

75

dB min

=

CMRR 20 log (∆V_CM/∆V_OS

)

90

75

70

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2

Electrical Characteristics (Continued)

+

These specifications apply for V⁻GND 0V, V

=

= = =

5V, V_CMV_OUT2.5V, I_R100 µA, FEEDBACK pin shorted to GND,

=

unless otherwise specified. Limits in standard typeface are for T_J25˚C; limits in boldface type apply over the Operating

Temperature Range .

Symbol

Parameter

Conditions

Typical LM614AM

LM614M

LM614BI

LM614I

LM614C

Limits

Units

(Note 6)

LM614AI

Limits

(Note 7)

OPERATIONAL AMPLIFIER

+

=

PSRR

Power Supply

Rejection Ratio

Open Loop

4V ≤ V⁺≤ 30V, V_CMV /2,

110

100

500

50

80

75

70

94

40

dB min

V/mV

min

+

=

PSRR 20 log (∆V /∆V_OS

)

+

=

30V,

A_V

R_L10 kΩ to GND, V

100

40

Voltage Gain

Slew Rate

5V ≤ V_OUT≤ 25V

V⁺30V (Note 8)

0.70

0.65

0.8

0.55

0.50

V/µs

=

±

SR

±

0.45

=

GBW

V_O1

Gain Bandwidth

C_L50 pF

MHz

0.52

V⁺− 1.4

V⁺− 1.6

V⁻+ 0.8

V⁻+ 0.9

25

MHz

=

Output Voltage

Swing High

R_L10 kΩ to GND

V⁺− 1.7

V⁺− 1.9

V⁻+ 0.9

V⁻+ 1.0

V⁺− 1.8

V⁺− 1.9

V⁻+ 0.95

V⁻+ 1.0

V min

V⁺36V (32V for LM614C)

+

V min

=

V_O2

Output Voltage

Swing Low

R_L10 kΩ to V

V max

V⁺36V (32V for LM614C)

V max

=

I_OUT

I_SINK

I_SHORT

Output Source

V_OUT2.5V, V_+IN0V,

20

16

mA min

mA max

=

V_−IN−0.3V

15

13

=

Output Sink

V_OUT1.6V, V_+IN0V,

17

14

13

=

Current

V_−IN0.3V

9

8

=

Short Circuit Current

V_OUT0V, V_+IN3V,

30

50

=

V_−IN2V, Source

40

60

=

V_OUT5V, V_+IN2V,

30

60

70

=

V_−IN3V, Sink

32

80

90

VOLTAGE REFERENCE

V_RVoltage Reference

(Note 9)

1.244

1.2365

1.2515

1.2191

1.2689

V min

V max

±

2.0%)

(

0.6%)

(

Average Temperature

Drift

(Note 10)

(Note 11)

10

80

150

PPM/˚C

max

Hysteresis

3.2

µV/˚C

V_RChange

with Current

V_{R(100 µA)}− V_{R(17 µA)}

0.05

0.1

1.5

2.0

0.2

0.6

2.5

2.8

1

mV max

Ω max

1.1

5

1.1

5

V

_{R(10 mA)}− V_{R(100 µA)}

(Note 12)

5.5

R

Resistance

∆V_{R(10 0.1 mA)}/9.9 mA

→

0.56

13

7

0.56

13

7

∆V_{R(100 17 µA)}/83 µA

→

Ω max

V_RChange

V_{R(Vro Vr)}− V_R(Vro

mV max

=

6.3V)

with High V_RO

(5.06V between Anode and

FEEDBACK)

10

3

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Electrical Characteristics (Continued)

+

These specifications apply for V⁻GND 0V, V

=

= = =

5V, V_CMV_OUT2.5V, I_R100 µA, FEEDBACK pin shorted to GND,

=

unless otherwise specified. Limits in standard typeface are for T_J25˚C; limits in boldface type apply over the Operating

Temperature Range .

Symbol

Parameter

Conditions

Typical LM614AM

LM614M

LM614BI

LM614I

LM614C

Limits

Units

(Note 6)

LM614AI

Limits

(Note 7)

VOLTAGE REFERENCE

V_RChange with

V_{R(V + 5V)}− V_{R(V +}

0.1

0.01

22

1.2

1.3

1

1.2

1.3

1

mV max

nA max

µV_RMS

=

36V)

V⁺Change

(V⁺32V for LM614C)

V_{R(V +}_5V)− V_{R(V +}

=

3V)

1.5

35

40

1.5

50

55

I_FB

FEEDBACK Bias

Current

V_ANODE≤ V_FB≤ 5.06V

29

=

e_n

Voltage Noise

BW 10 Hz to 10 kHz,

30

=

V_ROV_R

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de-

vice beyond its rated operating conditions.

+

Note 2: Input voltage above V is allowed.

Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below

−

V , a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.

=

Note 4: Junction temperature may be calculated using T

T

A

+ P θ . The given thermal resistance is worst-case for packages in sockets in still air. For packages

D jA

J

soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ are 90˚C/W for the N package, WM package.

jA

Note 5: Human body model, 100 pF discharged through a 1.5 kΩ resistor.

=

Note 6: Typical values in standard typeface are for T

25˚C; values in boldface type apply for the full operating temperature range. These values represent the

J

most likely parametric norm.

Note 7: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).

Note 8: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage

@

transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V.

Note 9: is the Cathode-feedback voltage, nominally 1.244V.

Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is

V

R

6

10 •∆V /(V

•∆T ), where ∆V is the lowest value subtracted from the highest, V

is the value at 25˚C, and ∆T is the temperature range. This parameter

R[25˚C] J

R

R[25˚C]

J

R

is guaranteed by design and sample testing.

Note 11: Hysteresis is the change in V caused by a change in T , after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

R

J

hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.

Note 12: Low contact resistance is required for accurate measurement.

Note 13: A military RETSLM614AMX electrical test specification is available on request. The LM614AMJ/883 can also be procured as a Standard Military Drawing.

Simplified Schematic Diagrams

Op Amp

DS009326-2

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4

Simplified Schematic Diagrams (Continued)

Reference / Bias

DS009326-3

Typical Performance Characteristics (Reference) T_J25˚C, FEEDBACK pin shorted to V⁻

=

0V, unless otherwise noted

Reference Voltage

vs Temperature

Accelerated Reference

Voltage Drift vs Time

Reference Voltage Drift

on 5 Representative Units

DS009326-48

DS009326-49

DS009326-47

Reference Voltage vs

Current and Temperature

Reference Voltage vs

Current and Temperature

Reference Voltage vs

Reference Current

DS009326-50

DS009326-51

DS009326-52

5

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Typical Performance Characteristics (Reference) T_J25˚C, FEEDBACK pin shorted to V⁻

=

0V, unless otherwise noted (Continued)

Reference Voltage vs

Reference Current

Reference AC

Stability Range

FEEDBACK Current vs

FEEDBACK-to-Anode

Voltage

DS009326-53

DS009326-54

DS009326-55

DS009326-58

DS009326-61

FEEDBACK Current vs

FEEDBACK-to-Anode

Voltage

Reference Noise Voltage

vs Frequency

Reference Small-Signal

Resistance vs Frequency

DS009326-57

DS009326-56

Reference Power-Up Time

Reference Voltage with

FEEDBACK Voltage Step

Reference Voltage with

z

100 12 µA Current Step

DS009326-59

DS009326-60

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6

Typical Performance Characteristics (Reference) T_J25˚C, FEEDBACK pin shorted to V⁻

=

0V, unless otherwise noted (Continued)

Reference Step Response

Reference Voltage Change

with Supply Voltage Step

z

for 100 µA

Current Step

10 mA

DS009326-63

DS009326-62

Typical Performance Characteristics (Op Amps) V⁺5V, V⁻GND 0V, V_CMV⁺/2, V_OUT

=

+

=

V /2, T_J25˚C, unless otherwise noted

Input Common-Mode

Voltage Range vs

Temperature

V_OSvs Junction

Temperature on 9

Representative Units

Input Bias Current vs

Common-Mode Voltage

DS009326-66

DS009326-64

DS009326-65

Slew Rate vs Temperature

and Output Sink Current

Large-Signal

Step Response

Output Voltage Swing

vs Temp. and Current

DS009326-67

DS009326-68

DS009326-69

7

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Typical Performance Characteristics (Op Amps) V⁺5V, V⁻GND 0V, V_CMV⁺/2,

=

+

=

V_OUTV /2, T_J25˚C, unless otherwise noted (Continued)

Output Source Current vs

Output Voltage and Temp.

Output Sink Current vs

Output Voltage and Temp.

Output Swing,

Large Signal

DS009326-71

DS009326-72

DS009326-70

Output Impedance vs

Frequency and Gain

Small-Signal Pulse

Response vs Temp.

Small-Signal Pulse

Response vs Load

DS009326-74

DS009326-75

DS009326-73

Op Amp Voltage Noise

vs Frequency

Op Amp Current Noise

vs Frequency

Small-Signal Voltage

Gain vs Frequency

and Temperature

DS009326-76

DS009326-77

DS009326-78

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8

Typical Performance Characteristics (Op Amps) V⁺5V, V⁻GND 0V, V_CMV⁺/2,

=

+

=

V_OUTV /2, T_J25˚C, unless otherwise noted (Continued)

Small-Signal Voltage Gain

vs Frequency and Load

Follower Small-Signal

Frequency Response

Common-Mode Input

Voltage Rejection Ratio

DS009326-79

DS009326-81

DS009326-80

Power Supply Current vs

Power Supply Voltage

DS009326-7

Positive Power Supply

Voltage Rejection Ratio

Negative Power Supply

Voltage Rejection Ratio

DS009326-21

DS009326-22

9

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Typical Performance Characteristics (Op Amps) V⁺5V, V⁻GND 0V, V_CMV⁺/2,

=

+

=

V_OUTV /2, T_J25˚C, unless otherwise noted (Continued)

Input Offset Current vs

Junction Temperature

Input Bias Current vs

Junction Temperature

DS009326-24

DS009326-38

Typical Performance Distributions

Average V_OSDrift

Military Temperature Range

Industrial Temperature Range

DS009326-29

DS009326-30

Average V_OSDrift

Average I_OSDrift

Commercial Temperature Range

Military Temperature Range

DS009326-31

DS009326-32

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10

Typical Performance Distributions (Continued)

Average I_OSDrift

Industrial Temperature Range

Average I_OSDrift

Commercial Temperature Range

DS009326-34

DS009326-33

Voltage Reference Broad-Band

Noise Distribution

Op Amp Voltage

Noise Distribution

Op Amp Current

Noise Distribution

DS009326-35

DS009326-36

DS009326-37

11

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Application Information

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that

models as a simple zener diode. With current I_rflowing in the

“forward” direction there is the familiar diode transfer func-

tion. I_rflowing in the reverse direction forces the reference

voltage to be developed from cathode to anode. The cath-

ode may swing from a diode drop below V⁻to the reference

voltage or to the avalanche voltage of the parallel protection

=

DS009326-11

FIGURE 3. 1.2V Reference

diode, nominally 7V. A 6.3V reference with V⁺

allowed.

3V is

Adjustable Reference

The FEEDBACK pin allows the reference output voltage,

_ro, to vary from 1.24V to 6.3V. The reference attempts to

V

hold V_rat 1.24V. If V_ris above 1.24V, the reference will con-

duct current from Cathode to Anode; FEEDBACK current al-

ways remains low. If FEEDBACK is connected to Anode,

=

then V_roV_r1.24V. For higher voltages FEEDBACK is

held at a constant voltage above Anode — say 3.76V for V_ro

=

5V. Connecting a resistor across the constant V_rgenerates

=

a current I V_r/R1 flowing from Cathode into FEEDBACK

node. A Thevenin equivalent 3.76V is generated from FEED-

DS009326-9

FIGURE 1. Voltages Associated with Reference

(Current Source I_ris External)

=

BACK to Anode with R2 3.76/I. Keep I greater than one

thousand times larger than FEEDBACK bias current for

<

0.1% error — I≥32 µA for the military grade over the military

temperature range (I≥5.5 µA for a 1% untrimmed error for a

The reference equivalent circuit reveals how V_ris held at the

constant 1.2V by feedback, and how the FEEDBACK pin

passes little current.

commercial part.)

To generate the required reverse current, typically a resistor

is connected from a supply voltage higher than the reference

voltage. Varying that voltage, and so varying I_r, has small ef-

fect with the equivalent series resistance of less than an ohm

at the higher currents. Alternatively, an active current source,

such as the LM134 series, may generate I_r.

Capacitors in parallel with the reference are allowed. See the

Reference AC Stability Range typical curve for capacitance

values — from 20 µA to 3 mA any capacitor value is stable.

With the reference’s wide stability range with resistive and

capacitive loads, a wide range of RC filter values will perform

noise filtering.

DS009326-12

FIGURE 4. Thevenin Equivalent

of Reference with 5V Output

DS009326-10

DS009326-13

FIGURE 2. Reference Equivalent Circuit

=

R1 Vr/I 1.24/32µ 39k

=

R2 R1 {(Vro/Vr) − 1} 39k {(5/1.24) − 1)} 118k

FIGURE 5. Resistors R1 and R2 Program

Reference Output Voltage to be 5V

Understanding that V_ris fixed and that voltage sources, re-

sistors, and capacitors may be tied to the FEEDBACK pin, a

range of V_rtemperature coefficients may be synthesized.

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12

Application Information (Continued)

DS009326-18

DS009326-14

FIGURE 10. Proportional-to-Absolute-Temperature

Current Source

FIGURE 6. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

DS009326-15

DS009326-19

FIGURE 7. Output Voltage has Positive TC

if R1 has Negative TC

FIGURE 11. Negative-TC Current Source

Hysteresis

The reference voltage depends, slightly, on the thermal his-

tory of the die. Competitive micro-power products

vary — always check the data sheet for any given device. Do

not assume that no specification means no hysteresis.

OPERATIONAL AMPLIFIERS

Any amp or the reference may be biased in any way with no

effect on the other amps or reference, except when a sub-

strate diode conducts (see Guaranteed Electrical Character-

istics (Note 1)). One amp input may be outside the

common-mode range, another amp may be operated as a

comparator, another with all terminals floating with no effect

on the others (tying inverting input to output and

non-inverting input to V⁻on unused amps is preferred).

Choosing operating points that cause oscillation, such as

driving too large a capacitive load, is best avoided.

DS009326-16

FIGURE 8. Diode in Series with R1 Causes Voltage

across R1 and R2 to be Proportional to Absolute

Temperature (PTAT)

Connecting a resistor across Cathode-to-FEEDBACK cre-

ates a 0 TC current source, but a range of TCs may be

synthesized.

Op Amp Output Stage

These op amps, like their LM124 series, have flexible and

relatively wide-swing output stages. There are simple rules

to optimize output swing, reduce cross-over distortion, and

optimize capacitive drive capability:

1. Output Swing: Unloaded, the 42 µA pull-down will bring

the output within 300 mV of V⁻over the military tempera-

ture range. If more than 42 µA is required, a resistor from

output to V⁻will help. Swing across any load may be im-

proved slightly if the load can be tied to V⁺, at the cost of

poorer sinking open-loop voltage gain

DS009326-17

=

I

Vr/R1 1.24/R1

FIGURE 9. Current Source is Programmed by R1

13

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output stage NPN r_euntil the output resistance is that of

the current limit 25Ω. 200 pF may then be driven without

oscillation.

Application Information (Continued)

2. Cross-over Distortion: The LM614 has lower cross-over

distortion (a 1 V_BEdeadband versus 3 V_BEfor the

LM124), and increased slew rate as shown in the char-

acteristic curves. A resistor pull-up or pull-down will force

class-A operation with only the PNP or NPN output tran-

sistor conducting, eliminating cross-over distortion

Op Amp Input Stage

The lateral PNP input transistors, unlike most op amps, have

BV_EBOequal to the absolute maximum supply voltage. Also,

they have no diode clamps to the positive supply nor across

the inputs. These features make the inputs look like high im-

pedances to input sources producing large differential and

common-mode voltages.

3. Capacitive Drive: Limited by the output pole caused by

the output resistance driving capacitive loads,

pull-down resistor conducting 1 mA or more reduces the

a

Typical Applications

DS009326-44

DS009326-42

=

V

(R /Pe + 1) V

REF

OUT

1

FIGURE 12. Simple Low Quiescent Drain Voltage

Regulator. Total supply current approximately 320 µA,

R , R should be 1% metal film

1

2

P

should be low T.C. trim pot

β

=

when V_IN+5V.

FIGURE 14. Slow Rise Time Upon Power-Up,

Adjustable Transducer Bridge Driver.

Rise time is approximately 1 ms.

DS009326-43

*10k must be low

t.c. trimpot.

FIGURE 13. Ultra Low Noise 10.00V Reference. Total

output noise is typically 14 µV_RMS

.

DS009326-46

FIGURE 15. Low Drop-Out Voltage Regulator Circuit,

drop-out voltage is typically 0.2V.

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14

Typical Applications (Continued)

DS009326-45

FIGURE 16. Transducer Data Acquisition System. Set zero code voltage, then adjust 10Ω gain adjust pot for full

scale.

15

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Physical Dimensions inches (millimeters) unless otherwise noted

Ceramic Dual-In-Line Package (J)

Order Number LM614AMJ/883

NS Package Number J16A

16-Lead Molded Small Outline Package (WM)

Order Number LM614CWM or LM614IWM

NS Package Number M16B

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16

Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

16-Lead Molded Dual-In-Line Package (N)

Order Number LM614CN, LM614AIN, LM614BIN, LM614AMN or LM614MN

NS Package Number N16A

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and

whose failure to perform when properly used in

accordance with instructions for use provided in the

labeling, can be reasonably expected to result in a

significant injury to the user.

2. A critical component is any component of a life

support device or system whose failure to perform

can be reasonably expected to cause the failure of

the life support device or system, or to affect its

safety or effectiveness.

National Semiconductor

Corporation

Americas

Tel: 1-800-272-9959

Fax: 1-800-737-7018

Email: support@nsc.com

National Semiconductor

Europe

National Semiconductor

Asia Pacific Customer

Response Group

Tel: 65-2544466

Fax: 65-2504466

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Fax: 81-3-5639-7507

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Deutsch Tel: +49 (0) 1 80-530 85 85

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Italiano Tel: +49 (0) 1 80-534 16 80

Email: sea.support@nsc.com

www.national.com

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.


型号：	LM614
厂家：	National Semiconductor
描述：	Quad Operational Amplifier and Adjustable Reference 四路运算放大器和可调参考运算放大器
文件：	总17页 (文件大小：859K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LM614 [NSC]

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