LME49740 [NSC]
Quad High Performance, High Fidelity Audio Operational Amplifier; 四路高性能，高保真音频运算放大器
| 型号： | LME49740 |
| 厂家： | 
National Semiconductor |
| 描述： | Quad High Performance, High Fidelity Audio Operational Amplifier |
| 文件： | 总20页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2007
LME49740
Quad High Performance, High Fidelity Audio Operational
Amplifier
General Description
Key Specifications
The LME49740 is part of the ultra-low distortion, low noise,
high slew rate operational amplifier series optimized and fully
specified for high performance, high fidelity applications.
Combining advanced leading-edge process technology with
state-of-the-art circuit design, the LME49740 audio opera-
tional amplifiers deliver superior audio signal amplification for
outstanding audio performance. The LME49740 combines
extremely low voltage noise density (2.7nV/√HZ) with van-
ishingly low THD+N (0.00003%) to easily satisfy the most
demanding audio applications. To ensure that the most chal-
lenging loads are driven without compromise, the LME49740
has a high slew rate of ±20V/μs and an output current capa-
bility of ±26mA. Further, dynamic range is maximized by an
output stage that drives 2kΩ loads to within 1V of either power
supply voltage and to within 1.4V when driving 600Ω loads.
■ꢀPower Supply Voltage Range
■ꢀTHD+N (AV = 1, VOUT = 3VRMS
ꢀꢀfIN = 1kHz)
±2.5V to ±17V
,
RL = 2kΩ
0.00003% (typ)
0.00003% (typ)
2.7nV/√Hz (typ)
±20V/μs (typ)
55MHz (typ)
140dB (typ)
RL = 600Ω
■ꢀInput Noise Density
■ꢀSlew Rate
■ꢀGain Bandwidth Product
■ꢀOpen Loop Gain (RL = 600Ω)
■ꢀInput Bias Current
■ꢀInput Offset Voltage
■ꢀDC Gain Linearity Error
10nA (typ)
The LME49740's outstanding CMRR(120dB), PSRR(120dB),
and VOS(0.1mV) give the amplifier excellent operational am-
plifier DC performance.
0.1mV (typ)
0.000009%
The LME49740 has a wide supply range of ±2.5V to ±17V.
Over this supply range the LME49740’s input circuitry main-
tains excellent common-mode and power supply rejection, as
well as maintaining its low input bias current. The LME49740
is unity gain stable. The Audio Operational Amplifier achieves
outstanding AC performance while driving complex loads with
values as high as 100pF.
Features
Easily drives 600Ω loads
■
■
■
■
■
Optimized for superior audio signal fidelity
Output short circuit protection
PSRR and CMRR exceed 120dB (typ)
SOIC and DIP packages
The LME49740 is available in 14–lead narrow body SOIC and
14–lead plastic DIP. Demonstration boards are available for
each package.
Applications
Ultra high quality audio amplification
■
■
■
■
■
■
■
■
High fidelity preamplifiers
High fidelity multimedia
State of the art phono pre amps
High performance professional audio
High fidelity equalization and crossover networks
High performance line drivers
High performance line receivers
High fidelity active filters
■
© 2007 National Semiconductor Corporation
202105
www.national.com
Typical Application
20210502
FIGURE 1. Passively Equalized RIAA Phono Preamplifier
Connection Diagram
20210501
Order Number LME49740MA
See NS Package Number — M14A
Order Number LME49740NA
See NS Package Number — N14A
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2
ESD Susceptibility (Note 4)
ESD Susceptibility (Note 5)
Junction Temperature
Thermal Resistance
ꢁθJA (MA)
2000V
200V
150°C
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
107°C/W
74°C/W
Power Supply Voltage
(VS = V+ - V-)
ꢁθJA (NA)
36V
Storage Temperature
Input Voltage
−65°C to 150°C
Temperature Range
TMIN ≤ TA ≤ TMAX
Supply Voltage Range
(V-)ꢀ-ꢀ0.7V to (V+)ꢀ+ꢀ0.7V
Continuous
–40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ± 17V
Output Short Circuit (Note 3)
Power Dissipation
Internally Limited
Electrical Characteristics (Notes 1, 2) The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz,
and TA = 25C, unless otherwise specified.
LME49740
Units
Symbol
Parameter
Conditions
Typical
Limit
(Limits)
(Note 6)
(Notes 7, 8)
AV = 1, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω
% (max)
% (max)
THD+N
Total Harmonic Distortion + Noise
Intermodulation Distortion
0.00003
0.00003
0.00009
AV = 1, VOUT = 3VRMS
IMD
0.00005
% (max)
Two-tone, 60Hz & 7kHz 4:1
GBWP
SR
Gain Bandwidth Product
Slew Rate
55
45
MHz (min)
±20
±15
V/μs (min)
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
FPBW
ts
Full Power Bandwidth
10
MHz
AV = 1, 10V step, CL = 100pF
0.1% error range
Settling time
1.2
μs
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.34
0.65
4.7
μVRMS
en
f = 1kHz
f = 10Hz
2.7
6.4
ꢀnV/√Hz
ꢀnV/√Hz
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
ꢀpA/√Hz
ꢀpA/√Hz
mV (max)
in
Current Noise Density
Offset Voltage
VOS
±0.1
0.2
±0.7
110
Average Input Offset Voltage Drift vs
Temperature
ΔVOS/ΔTemp
40°C ≤ TA ≤ 85°C
ΔVS = 20V (Note 9)
μV/°C
Average Input Offset Voltage Shift vs
Power Supply Voltage
PSRR
120
dB (min)
fIN = 1kHz
118
112
dB
dB
ISOCH-CH
IB
Channel-to-Channel Isolation
fIN = 20kHz
Input Bias Current
VCM = 0V
10
0.1
11
72
65
nA (max)
nA/°C
Input Bias Current Drift vs
Temperature
ΔIOS/ΔTemp
IOS
–40°C ≤ TA ≤ 85°C
Input Offset Current
VCM = 0V
nA (max)
+14.1
–13.9
(V+)–2.0
(V-)+2.0
V (min)
V (min)
VIN-CM
CMRR
Common-Mode Input Voltage Range
–10V<VCM<10V
Common-Mode Rejection
120
30
110
dB (min)
kΩ
Differential Input Impedance
Common Mode Input Impedance
ZIN
–10V<VCM<10V
1000
140
MΩ
–10V<VOUT<10V, RL = 600Ω
–10V<VOUT<10V, RL = 2kΩ
–10V<VOUT<10V, RL = 10kΩ
dB (min)
dB (min)
dB (min)
140
140
AVOL
Open Loop Voltage Gain
125
3
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LME49740
Units
(Limits)
Symbol
Parameter
Conditions
Typical
Limit
(Notes 7, 8)
±12.5
(Note 6)
±13.6
RL = 600Ω
RL = 2kΩ
RL = 10kΩ
V (min)
V (min)
V (min)
mA (min)
±14.0
±14.1
±26
VOUTMAX
Maximum Output Voltage Swing
IOUT
Output Current
±23
RL = 600Ω, VS = ±17V
+30
–38
mA
mA
IOUT-CC
Short Circuit Current
fIN = 10kHz
Closed-Loop
Open-Loop
ROUT
Output Impedance
0.01
13
Ω
Ω
%
CLOAD
IS
Capacitive Load Drive Overshoot
Total Quiescent Current
100pF
16
IOUT = 0mA
18.5
20
mA (max)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Note 2: Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications
and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics
may degrade when the device is not operated under the listed test conditions.
Note 3: Amplifier output connected to GND, any number of amplifiers within a package.
Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor.
Note 5: Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into
the IC with no external series resistor (resistance of discharge path must be under 50Ω).
Note 6: Typical specifications are specified at +25ºC and represent the most likely parametric norm.
Note 7: Tested limits are guaranteed to National's AOQL (Average Outgoing Quality Level).
Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 9: PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔVS)|.
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4
Typical Performance Characteristics
THD+N vs Output Voltage
VCC = 15V, VEE = –15V, RL = 2kΩ
THD+N vs Output Voltage
VCC = 17V, VEE = –17V, RL = 2kΩ
20210515
20210516
THD+N vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ, VOUT = 3VRMS
THD+N vs Frequency
VCC = 17V, VEE = –17V, RL = 2kΩ, VOUT = 3VRMS
20210511
20210513
THD+N vs Frequency
VCC = 15V, VEE = –15V, RL = 600Ω, VOUT = 3VRMS
THD+N vs Frequency
VCC = 17V, VEE = –17V, RL = 600Ω, VOUT = 3VRMS
20210514
20210512
5
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IMD vs Output Voltage
VCC = 15V, VEE = –15V, RL = 2kΩ
IMD vs Output Voltage
VCC = 17V, VEE = –17V, RL = 2kΩ
20210553
20210554
PSRR+ vs Frequency
VCC = 15V, VEE = –15V,
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ
RL = 2kΩ, VRIPPLE = 200mVpp
20210559
20210560
CMRR vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ
20210552
20210519
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6
Output Voltage vs Supply Voltage
Output Voltage vs Load Resistance
THD+N = 1%
RL = 2kΩ, THD+N = 1%
20210517
20210518
Supply Current vs Supply Voltage
Full Power Bandwidth vs Frequency
RL = 2kΩ, THD+N = 1%
20210520
20210507
Gain Phase vs Frequency
Voltage Noise Density vs Frequency
20210557
20210551
7
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Small-Signal Transient Response
AV = 1, CL = 100pF
Large-Signal Transient Response
AV = 1, CL = 100pF
20210556
20210555
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8
inputs changes the amplifier’s noise gain. The result is that
the error signal (distortion) is amplified by a factor of 101. Al-
though the amplifier’s closed-loop gain is unaltered, the feed-
back available to correct distortion errors is reduced by 101,
which means that measurement resolution increases by 101.
To ensure minimum effects on distortion measurements,
keep the value of R1 low as shown in Figure 2.
Application Information
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by
LME49740 is below the capabilities of all commercially avail-
able equipment. This makes distortion measurements just
slightly more difficult than simply connecting a distortion me-
ter to the amplifier’s inputs and outputs. The solution, how-
ever, is quite simple: an additional resistor. Adding this
resistor extends the resolution of the distortion measurement
equipment.
This technique is verified by duplicating the measurements
with high closed loop gain and/or making the measurements
at high frequencies. Doing so produces distortion compo-
nents that are within the measurement equipment’s capabili-
ties. This datasheet’s THD+N and IMD values were generat-
ed using the above described circuit connected to an Audio
Precision System Two Cascade.
The LME49740’s low residual distortion is an input referred
internal error. As shown in Figure 2, adding the 10Ω resistor
connected between the amplifier’s inverting and non-inverting
20210562
FIGURE 2. THD+N and IMD Distortion Test Circuit
9
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Capacitive loads greater than 100pF must be isolated from
the output. The most straightforward way to do this is to put
a resistor in series with the output. This resistor will also pre-
vent excess power dissipation if the output is accidentally
shorted.
Application Hints
The LME49740 is a high speed op amp with excellent phase
margin and stability. Capacitive loads up to 100pF will cause
little change in the phase characteristics of the amplifiers and
are therefore allowable.
Noise Measurement Circuit
20210527
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise.
Total Gain: 115 dB at f = 1 kHz
Input Referred Noise Voltage: en = VO/560,000 (V)
RIAA Preamp Voltage Gain,
RIAA Deviation vs Frequency
VIN = 10mV, AV = 35.0dB, f = 1kHz
Flat Amp Voltage Gain vs Frequency
VO = 0dB, AV = 80.0dB, f = 1kHz
20210529
20210528
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10
Typical Applications
NAB Preamp
NAB Preamp Voltage Gain vs Frequency
VIN = 10mV, AV = 34.5dB, f = 1kHz
20210530
AV = 34.5
20210531
F = 1 kHz
En = 0.38 μV
A Weighted
Balanced to Single Ended Converter
Adder/Subtracter
20210533
VO = V1 + V2 − V3 − V4
20210532
VO = V1–V2
Sine Wave Oscillator
20210534
11
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Second Order High Pass Filter
(Butterworth)
Second Order Low Pass Filter
(Butterworth)
20210535
20210536
Illustration is f0 = 1 kHz
Illustration is f0 = 1 kHz
State Variable Filter
20210537
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12
AC/DC Converter
20210538
2 Channel Panning Circuit (Pan Pot)
Line Driver
20210540
20210539
Tone Control
20210541
13
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20210542
RIAA Preamp
20210503
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
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14
Balanced Input Mic Amp
20210543
Illustration is:
V0 = 101(V2 − V1)
15
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10 Band Graphic Equalizer
20210544
fo (Hz)
32
C1
C2
R1
R2
0.12μF
0.056μF
0.033μF
0.015μF
8200pF
3900pF
2000pF
1100pF
510pF
4.7μF
3.3μF
75kΩ
68kΩ
62kΩ
68kΩ
62kΩ
68kΩ
68kΩ
62kΩ
68kΩ
51kΩ
500Ω
510Ω
510Ω
470Ω
470Ω
470Ω
470Ω
470Ω
510Ω
510Ω
64
125
250
500
1k
1.5μF
0.82μF
0.39μF
0.22μF
0.1μF
2k
4k
0.056μF
0.022μF
0.012μF
8k
16k
330pF
Note 10: At volume of change = ±12 dB
ꢀꢀQ = 1.7
ꢀꢀReference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61
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16
Revision History
Rev
Date
Description
1.0
02/28/07
Initial WEB release.
17
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Physical Dimensions inches (millimeters) unless otherwise noted
Dual-In-Line Package
Order Number LME49740MA
NS Package Number M14A
Dual-In-Line Package
Order Number LME49740NA
NS Package Number N14A
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18
19
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Notes
THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION
(“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY
OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO
SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS,
IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS
DOCUMENT.
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NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL
PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR
APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND
APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE
NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS.
EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO
LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE
AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY
RIGHT.
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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and
whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected
to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform
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brand or product names may be trademarks or registered trademarks of their respective holders.
Copyright© 2007 National Semiconductor Corporation
For the most current product information visit us at www.national.com
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