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LME49740MAX/NOPB [TI]

Quad High Performance, High Fidelity Audio Operational Amplifier 14-SOIC -40 to 85;
LME49740MAX/NOPB
型号： LME49740MAX/NOPB
厂家： TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述：

Quad High Performance, High Fidelity Audio Operational Amplifier 14-SOIC -40 to 85

放大器 光电二极管
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LME49740  
www.ti.com  
SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
LME49740 Quad High-Performance, High-Fidelity Audio Operational Amplifier  
Check for Samples: LME49740  
1
FEATURES  
DESCRIPTION  
The LME49740 is part of the ultra-low distortion, low  
noise, high slew rate operational amplifier series  
optimized and fully specified for high-performance,  
high-fidelity applications. Combining advanced  
leading-edge process technology with state-of-the-art  
circuit design, the LME49740 audio operational  
amplifiers deliver superior audio signal amplification  
for outstanding audio performance. The LME49740  
combines extremely low voltage noise density  
(2.7nV/√HZ) with vanishingly low THD+N (0.00003%)  
to easily satisfy the most demanding audio  
applications. To ensure that the most challenging  
loads are driven without compromise, the LME49740  
has a high slew rate of ±20V/μs and an output current  
capability of ±26mA. Further, dynamic range is  
maximized by an output stage that drives 2kΩ loads  
to within 1V of either power supply voltage and to  
within 1.4V when driving 600Ω loads.  
2
•
Easily Drives 600Ω Loads  
•
•
•
•
Optimized for Superior Audio Signal Fidelity  
Output Short Circuit Protection  
PSRR and CMRR Exceed 120dB (Typ)  
SOIC and PDIP Packages  
APPLICATIONS  
•
•
•
•
•
•
Ultra High-Quality Audio Amplification  
High-Fidelity Preamplifiers  
High-Fidelity Multimedia  
State-of-the-Art Phono Pre Amps  
High-Performance Professional Audio  
High-Fidelity Equalization and Crossover  
Networks  
•
•
•
High-Performance Line Drivers  
High-Performance Line Receivers  
High-Fidelity Active Filters  
The LME49740's outstanding CMRR (120dB), PSRR  
(120dB), and VOS (0.1mV) give the amplifier excellent  
operational amplifier DC performance.  
The LME49740 has a wide supply range of ±2.5V to  
±17V. Over this supply range the LME49740’s input  
circuitry maintains excellent common-mode and  
power supply rejection, as well as maintaining its low  
input bias current. The LME49740 is unity gain  
stable. The Audio Operational Amplifier achieves  
outstanding AC performance while driving complex  
loads with values as high as 100pF.  
KEY SPECIFICATIONS  
•
•
Power Supply Voltage Range: ±2.5V to ±17V  
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)  
–
–
RL = 2kΩ: 0.00003% (typ)  
RL = 600Ω: 0.00003% (typ)  
•
•
•
•
•
•
•
Input Noise Density: 2.7nV/√Hz (typ)  
Slew Rate: ±20V/μs (typ)  
The LME49740 is available in 14-lead narrow body  
SOIC and 14-lead PDIP. Demonstration boards are  
available for each package.  
Gain Bandwidth Product: 55MHz (typ)  
Open Loop Gain (RL = 600Ω): 140dB (typ)  
Input Bias Current: 10nA (typ)  
Input Offset Voltage: 0.1mV (typ)  
DC Gain Linearity Error: 0.000009%  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2013, Texas Instruments Incorporated  
LME49740  
SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
www.ti.com  
TYPICAL APPLICATION  
150W  
3320W  
3320W  
150W  
26.1 kW  
+
909W  
-
-
LME49740  
+
LME49740  
+
3.83 kW  
+
100W  
OUTPUT  
22 nF//4.7 nF//500 pF  
10pF  
INPUT  
47 kW  
47 nF//33 nF  
Note: 1% metal film resistors, 5% polypropylene capacitors  
Figure 1. Passively Equalized RIAA Phono Preamplifier  
CONNECTION DIAGRAM  
Figure 2. 14-Lead SOIC (D Package)  
14-Lead PDIP (NFF Package)  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
2
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SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)  
Power Supply Voltage  
(VS = V+ - V-)  
36V  
−65°C to 150°C  
(V-) - 0.7V to (V+) + 0.7V  
Continuous  
Storage Temperature  
Input Voltage  
Output Short Circuit(4)  
Power Dissipation  
ESD Susceptibility(5)  
ESD Susceptibility(6)  
Junction Temperature  
Thermal Resistance  
θJA (MA)  
Internally Limited  
2000V  
200V  
150°C  
107°C/W  
74°C/W  
θJA (NA)  
Temperature Range  
T
MIN ≤ TA ≤ TMAX  
–40°C ≤ TA ≤ 85°C  
±2.5V ≤ VS ≤ ± 17V  
Supply Voltage Range  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.  
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured  
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.  
Some performance characteristics may degrade when the device is not operated under the listed test conditions.  
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and  
specifications.  
(4) Amplifier output connected to GND, any number of amplifiers within a package.  
(5) Human body model, 100pF discharged through a 1.5kΩ resistor.  
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then  
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).  
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SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
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ELECTRICAL CHARACTERISTICS(1)(2)  
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25C, unless otherwise specified.  
LME49740  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical(3)  
Limit(4)(5)  
AV = 1, VOUT = 3VRMS  
RL = 2kΩ  
RL = 600Ω  
% (max)  
% (max)  
THD+N  
Total Harmonic Distortion + Noise  
Intermodulation Distortion  
0.00003  
0.00003  
0.00009  
AV = 1, VOUT = 3VRMS  
Two-tone, 60Hz & 7kHz 4:1  
IMD  
0.00005  
% (max)  
GBWP  
SR  
Gain Bandwidth Product  
Slew Rate  
55  
45  
MHz (min)  
±20  
±15  
V/μs (min)  
VOUT = 1VP-P, –3dB  
referenced to output magnitude  
at f = 1kHz  
FPBW  
ts  
Full Power Bandwidth  
10  
MHz  
AV = 1, 10V step, CL = 100pF  
0.1% error range  
Settling time  
1.2  
μs  
Equivalent Input Noise Voltage  
Equivalent Input Noise Density  
fBW = 20Hz to 20kHz  
0.34  
0.65  
4.7  
μVRMS  
en  
f = 1kHz  
f = 10Hz  
2.7  
6.4  
nV/√Hz  
nV/√Hz  
f = 1kHz  
f = 10Hz  
1.6  
3.1  
pA/√Hz  
pA/√Hz  
in  
Current Noise Density  
Offset Voltage  
VOS  
±0.1  
±0.7  
110  
mV (max)  
Average Input Offset Voltage Drift vs  
Temperature  
ΔVOS/ΔTemp  
40°C ≤ TA ≤ 85°C  
ΔVS = 20V(6)  
0.2  
μV/°C  
Average Input Offset Voltage Shift vs  
Power Supply Voltage  
PSRR  
120  
dB (min)  
fIN = 1kHz  
fIN = 20kHz  
118  
112  
dB  
dB  
ISOCH-CH  
IB  
Channel-to-Channel Isolation  
Input Bias Current  
VCM = 0V  
10  
0.1  
11  
72  
65  
nA (max)  
Input Bias Current Drift vs  
Temperature  
ΔIOS/ΔTemp  
IOS  
–40°C ≤ TA ≤ 85°C  
VCM = 0V  
nA/°C  
Input Offset Current  
nA (max)  
+14.1  
–13.9  
(V+)–2.0  
(V-)+2.0  
V (min)  
V (min)  
VIN-CM  
CMRR  
Common-Mode Input Voltage Range  
Common-Mode Rejection  
–10V<VCM<10V  
120  
30  
110  
dB (min)  
kΩ  
Differential Input Impedance  
Common Mode Input Impedance  
ZIN  
–10V<VCM<10V  
1000  
140  
MΩ  
–10V<VOUT<10V, RL = 600Ω  
–10V<VOUT<10V, RL = 2kΩ  
–10V<VOUT<10V, RL = 10kΩ  
RL = 600Ω  
dB (min)  
dB (min)  
dB (min)  
V (min)  
V (min)  
V (min)  
mA (min)  
AVOL  
Open Loop Voltage Gain  
140  
140  
125  
±13.6  
±14.0  
±14.1  
±26  
±12.5  
VOUTMAX  
Maximum Output Voltage Swing  
RL = 2kΩ  
RL = 10kΩ  
IOUT  
Output Current  
RL = 600Ω, VS = ±17V  
±23  
+30  
–38  
mA  
mA  
IOUT-CC  
Short Circuit Current  
fIN = 10kHz  
Closed-Loop  
Open-Loop  
ROUT  
Output Impedance  
0.01  
13  
Ω
Ω
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.  
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured  
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.  
Some performance characteristics may degrade when the device is not operated under the listed test conditions.  
(3) Typical specifications are specified at +25ºC and represent the most likely parametric norm.  
(4) Tested limits are specified to AOQL (Average Outgoing Quality Level).  
(5) Datasheet min/max specification limits are specified by design, test, or statistical analysis.  
(6) PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔVS)|.  
4
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SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
ELECTRICAL CHARACTERISTICS(1)(2) (continued)  
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25C, unless otherwise specified.  
LME49740  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical(3)  
Limit(4)(5)  
CLOAD  
IS  
Capacitive Load Drive Overshoot  
Total Quiescent Current  
100pF  
16  
%
IOUT = 0mA  
18.5  
20  
mA (max)  
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SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
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TYPICAL PERFORMANCE CHARACTERISTICS  
THD+N vs Output Voltage  
VCC = 15V, VEE = –15V, RL = 2kΩ  
THD+N vs Output Voltage  
VCC = 17V, VEE = –17V, RL = 2kΩ  
Figure 3.  
Figure 4.  
THD+N vs Frequency  
VCC = 15V, VEE = –15V, RL = 2kΩ, VOUT = 3VRMS  
THD+N vs Frequency  
VCC = 17V, VEE = –17V, RL = 2kΩ, VOUT = 3VRMS  
Figure 5.  
Figure 6.  
THD+N vs Frequency  
VCC = 15V, VEE = –15V, RL = 600Ω, VOUT = 3VRMS  
THD+N vs Frequency  
VCC = 17V, VEE = –17V, RL = 600Ω, VOUT = 3VRMS  
Figure 7.  
Figure 8.  
6
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
IMD vs Output Voltage  
VCC = 15V, VEE = –15V, RL = 2kΩ  
IMD vs Output Voltage  
VCC = 17V, VEE = –17V, RL = 2kΩ  
0.01  
0.01  
0.005  
0.005  
0.002  
0.001  
0.002  
0.001  
0.0005  
0.0005  
0.0002  
0.0001  
0.0002  
0.0001  
0.00005  
0.00005  
0.00002  
0.00001  
0.00002  
0.00001  
10m  
100m  
1
10 20  
10m  
100m  
Figure 10.  
1
10 20  
V
V
RMS  
RMS  
Figure 9.  
PSRR+ vs Frequency  
VCC = 15V, VEE = –15V,  
RL = 2kΩ, VRIPPLE = 200mVpp  
PSRR- vs Frequency  
VCC = 15V, VEE = –15V, RL = 2kΩ  
RL = 2kΩ, VRIPPLE = 200mVpp  
-60  
-70  
-60  
-70  
-80  
-80  
-90  
-90  
-100  
-110  
-120  
-130  
-140  
-150  
-100  
-110  
-120  
-130  
-140  
-150  
-160  
20  
-160  
20  
100  
100  
1k  
10k 20k  
1k  
10k 20k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 11.  
Figure 12.  
CMRR vs Frequency  
VCC = 15V, VEE = –15V, RL = 2kΩ  
Crosstalk vs Frequency  
VCC = 15V, VEE = –15V, RL = 2kΩ  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
-130  
10  
100  
1k  
10k  
100k  
FREQUENCY (Hz)  
Figure 13.  
Figure 14.  
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Output Voltage vs Supply Voltage  
Output Voltage vs Load Resistance  
THD+N = 1%  
RL = 2kΩ, THD+N = 1%  
Figure 15.  
Figure 16.  
Supply Current vs Supply Voltage  
RL = 2kΩ, THD+N = 1%  
Full Power Bandwidth vs Frequency  
2
0
0 dB = 1 V  
PP  
-2  
-4  
-6  
-8  
-10  
-12  
-14  
1
10 100 1k 10k 100k 1M  
FREQUENCY (Hz)  
100M  
10M  
Figure 17.  
Figure 18.  
Gain Phase vs Frequency  
Voltage Noise Density vs Frequency  
180  
160  
140  
120  
100  
80  
100  
10  
1
V
= 30V  
S
V
CM  
= 15V  
60  
40  
20  
0
1k  
10k  
10  
100  
100k 1M 10M  
1
10  
100  
1k  
10k  
100k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 19.  
Figure 20.  
8
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Small-Signal Transient Response  
AV = 1, CL = 100pF  
Large-Signal Transient Response  
AV = 1, CL = 100pF  
Figure 21.  
Figure 22.  
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APPLICATION INFORMATION  
DISTORTION MEASUREMENTS  
The vanishingly low residual distortion produced by LME49740 is below the capabilities of all commercially  
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a  
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional  
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.  
The LME49740’s low residual distortion is an input referred internal error. As shown in Figure 23, adding the 10Ω  
resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain.  
The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop  
gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that  
measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the  
value of R1 low as shown in Figure 23.  
This technique is verified by duplicating the measurements with high closed loop gain and/or making the  
measurements at high frequencies. Doing so produces distortion components that are within the measurement  
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described  
circuit connected to an Audio Precision System Two Cascade.  
R2  
1000W  
-
LME49740  
R1  
10W  
Distortion Signal Gain = 1+(R2/R1)  
+
Analyzer Input  
Generator Output  
Audio Precision  
System Two  
Cascade  
Actual Distortion = AP Value/100  
Figure 23. THD+N and IMD Distortion Test Circuit  
APPLICATION HINTS  
The LME49740 is a high-speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF  
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.  
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is  
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is  
accidentally shorted.  
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NOISE MEASUREMENT CIRCUIT  
+V  
CC  
-V  
EE  
+
47 mF  
47 mF  
+
V1  
+
0.47 mF  
LME49740  
0.47 mF  
+
-
390  
V2  
-
4.7 mF  
+
+
-
39k  
V
O
15 nF  
4.7 nF  
16k  
39k  
AVERAGE RESPONDING  
AC VOLT METER  
99k  
200k  
99k  
27 pF  
1k  
27 pF  
390  
1k  
RIAA PREAMP  
35 dB, f = 1 kHz  
FLAT AMP. 40 dB + 40 dB  
A. Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for  
power line noise.  
Figure 24. Total Gain: 115 dB at f = 1 kHz  
Input Referred Noise Voltage: en = VO/560,000 (V)  
RIAA Preamp Voltage Gain,  
RIAA Deviation vs Frequency  
Flat Amp Voltage Gain vs Frequency  
VO = 0dB, AV = 80.0dB, f = 1kHz  
VIN = 10mV, AV = 35.0dB, f = 1kHz  
50  
40  
30  
20  
10  
90  
80  
70  
60  
50  
40  
30  
20  
0
+1  
0
-1  
20  
10  
100  
1k  
FREQUENCY (Hz)  
Figure 25.  
10k 20k  
100  
1k  
10k  
100k  
FREQUENCY (Hz)  
Figure 26.  
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TYPICAL APPLICATIONS  
+
V
I
1
4
V
O
LME49740  
TAPE  
HEAD  
-
15 nF  
3.6k  
200k  
200  
+
47 mF  
AV = 34.5  
F = 1 kHz  
En = 0.38 μV  
A Weighted  
Figure 27. NAB Preamp  
70  
60  
50  
40  
30  
20  
10  
0
20  
100  
1k  
10k 20k  
FREQUENCY (Hz)  
Figure 28. NAB Preamp Voltage Gain vs Frequency  
VIN = 10mV, AV = 34.5dB, f = 1kHz  
R
R
V2  
V1  
-
1
4
V
O
LME49740  
R
+
R
VO = V1–V2  
Figure 29. Balanced to Single-Ended Converter  
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R
R
V1  
V2  
+
1
4
V
O
LME49740  
R
R
-
R
R
V3  
V4  
VO = V1 + V2 − V3 − V4  
Figure 30. Adder/Subtracter  
C
C
R
R
+
1
4
LME49740  
750  
V
O
-
14 mA @ 10V  
Figure 31. Sine Wave Oscillator  
R1  
11k  
C1  
C2  
0.01 mF 0.01 mF  
+
V
I
1
4
V
O
LME49740  
R2  
22k  
-
Illustration is f0 = 1 kHz  
Figure 32. Second-Order High-Pass Filter  
(Butterworth)  
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C1  
0.022 mF  
R1  
10k  
R2  
10k  
+
1
V
I
V
O
LME49740  
C2  
0.011 mF  
4
-
Illustration is f0 = 1 kHz  
Figure 33. Second-Order Low-Pass Filter  
(Butterworth)  
R2  
C1  
0.01 mF  
C1  
0.01 mF  
R2  
R1  
V
R1  
V
-
-
-
1
4
1
4
1
4
V
LP  
LME49740  
LME49740  
LME49740  
HP  
BP  
R
G
V
+
+
+
IN  
R2  
R0  
Figure 34. State Variable Filter  
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C1  
10 mF  
R5  
20k  
R2  
20k  
R3  
10k  
R4  
20k  
R1  
20k  
D1  
1S1588  
-
-
V
IN  
1
4
1
4
V
O
= |VIN|  
LME49740  
LME49740  
+
+
D2  
1S1588  
R6  
15k  
R7  
6.2k  
Figure 35. AC/DC Converter  
3.41R1  
51k  
R1  
R1  
15k  
15k  
-
1
4
V
O1  
LME49740  
+
0.707R1  
10k  
V
I
-
1
4
R1  
15k  
R1  
15k  
V
O2  
LME49740  
+
3.41R1  
51k  
Figure 36. 2-Channel Panning Circuit (Pan Pot)  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
15  
Product Folder Links: LME49740  
LME49740  
SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
www.ti.com  
R2  
V
CC  
R3  
10k  
R1  
-
V
I
1
4
Q1  
LME49740  
+
R9  
10k  
R7  
33  
V
O
R8  
33  
R5  
10k  
BIAS  
Q2  
R6  
10k  
-V  
EE  
Figure 37. Line Driver  
BOOST BASS CUT  
R2  
R1  
R1  
V
I
C1  
0.05 mF  
C1  
0.05 mF  
R3  
-
1
4
C2  
0.005 mF  
LME49740  
V
O
+
R5  
R5  
R4  
BOOST TREBLE CUT  
Figure 38. Tone Control  
16  
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Copyright © 2007–2013, Texas Instruments Incorporated  
Product Folder Links: LME49740  
LME49740  
www.ti.com  
SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
33 mF  
10 mF  
+
470  
1
LME49740  
400 pF  
4
47k  
Phono  
Cartridge  
-
100k  
16k  
200k  
4.7 nF  
15 nF  
390  
100 mF  
Av = 35 dB  
En = 0.33 μV  
S/N = 90 dB  
f = 1 kHz  
A Weighted  
A Weighted, VIN = 10 mV  
@f = 1 kHz  
Figure 39. RIAA Preamp  
R3  
10k  
R4  
10k  
V
I
+
1
4
LME49740  
R
-
R2  
10k  
-
1
4
V
O
LME49740  
R1  
200  
R5  
10k  
+
R6  
10k  
R7  
10k  
-
1
4
LME49740  
+
V2  
R
Illustration is:  
V0 = 101(V2 − V1)  
Figure 40. Balanced Input Mic Amp  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Links: LME49740  
LME49740  
SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
www.ti.com  
20k  
CUT  
BOOST  
C2  
f0  
f0  
f0  
f0  
1
2
+
R2  
1
4
3
4
3k  
V
O
LME49740  
3k  
V
I
C1  
-
+
f0  
1
4
5
LME49740  
R1  
f0  
-
6
7
8
9
f0  
f0  
f0  
f0  
10  
A. See Table 1.  
Figure 41. 10-Band Graphic Equalizer  
Table 1. C1, C2, R1, and R2 Values for Figure 41(1)  
fo (Hz)  
32  
C1  
C2  
R1  
R2  
0.12μF  
0.056μF  
0.033μF  
0.015μF  
8200pF  
3900pF  
2000pF  
1100pF  
510pF  
4.7μF  
75kΩ  
68kΩ  
62kΩ  
68kΩ  
62kΩ  
68kΩ  
68kΩ  
62kΩ  
68kΩ  
51kΩ  
500Ω  
510Ω  
510Ω  
470Ω  
470Ω  
470Ω  
470Ω  
470Ω  
510Ω  
510Ω  
64  
3.3μF  
125  
250  
500  
1k  
1.5μF  
0.82μF  
0.39μF  
0.22μF  
0.1μF  
2k  
4k  
0.056μF  
0.022μF  
0.012μF  
8k  
16k  
330pF  
(1) At volume of change = ±12 dB Q = 1.7  
18  
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Copyright © 2007–2013, Texas Instruments Incorporated  
Product Folder Links: LME49740  
 
 
LME49740  
www.ti.com  
SNAS377B –FEBRUARY 2007–REVISED APRIL 2013  
REVISION HISTORY  
Rev  
Date  
Description  
1.0  
02/28/07  
Initial WEB release.  
Fixed the captions on the LME4970MA package (from Dual-In-Line  
to Molded Package (SO).  
1.01  
B
02/08/08  
04/04/13  
Changed layout of National Data Sheet to TI format.  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
19  
Product Folder Links: LME49740  
PACKAGE OPTION ADDENDUM  
www.ti.com  
1-Oct-2016  
PACKAGING INFORMATION  
Orderable Device  
LME49740MA/NOPB  
LME49740MAX/NOPB  
LME49740NA/NOPB  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 85  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
OBSOLETE  
SOIC  
SOIC  
PDIP  
D
14  
14  
14  
TBD  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
LME49740  
MA  
OBSOLETE  
OBSOLETE  
D
-40 to 85  
LME49740  
MA  
NFF  
-40 to 85  
LME49740NA  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
1-Oct-2016  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
MECHANICAL DATA  
NFF0014A  
N14A (Rev G)  
www.ti.com  
IMPORTANT NOTICE  
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
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