LMH6640MF/NOPB [NSC]
IC 1 CHANNEL, VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN, Audio/Video Amplifier;
| 型号： | LMH6640MF/NOPB |
| 厂家： | 
National Semiconductor |
| 描述： | IC 1 CHANNEL, VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN, Audio/Video Amplifier 运算放大器 CD |
| 文件： | 总13页 (文件大小：898K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2004
LMH6640
TFT-LCD Single, 16V Rail-to-Rail High Output
Operational Amplifier
General Description
Features
(VS = 16V, RL= 2 kΩ to V+/2, 25˚C, Typical Values Unless
™
The LMH 6640 is a voltage feedback operational amplifier
with a rail-to-rail output drive capability of 100 mA. Employ-
ing National’s patented VIP10 process, the LMH6640 deliv-
ers a bandwidth of 190 MHz at a current consumption of only
4mA. An input common mode voltage range extending to
0.3V below the V− and to within 0.9V of V+, makes the
LMH6640 a true single supply op-amp. The output voltage
range extends to within 100 mV of either supply rail providing
the user with a dynamic range that is especially desirable in
low voltage applications.
Specified)
n Supply current (no load)
n Output resistance (closed loop 1 MHz)
n −3 dB BW (AV = 1)
n Settling time ( 0.1%, 2 VPP
n Input common mode voltage
n Output voltage swing
n Linear output current
4 mA
0.35Ω
190 MHz
)
35 ns
−0.3V to 15.1V
100 mV from rails
100 mA
n Total harmonic distortion (2 VPP, 5 MHz)
n Fully characterized for:
n No output phase reversal with CMVR exceeded
n Differential gain (RL = 150Ω)
n Differential phase (RL = 150Ω)
−64 dBc
5V & 16V
The LMH6640 offers a slew rate of 170 V/µs resulting in a full
power bandwidth of approximately 28 MHz with 5V single
supply (2 VPP, −1 dB). Careful attention has been paid to
ensure device stability under all operating voltages and
modes. The result is a very well behaved frequency re-
sponse characteristic for any gain setting including +1, and
excellent specifications for driving video cables including
0.12%
0.12˚
Applications
n TFT panel VCOM buffer amplifier
n Active filters
@
total harmonic distortion of −64 dBc
5 MHz, differential
gain of 0.12% and differential phase of 0.12˚.
n CD/DVD ROM
n ADC buffer amplifier
n Portable video
n Current sense buffer
Typical Application
20086234
Typical Application as a TFT Panel VCOM Driver
™
LMH is a trademark of National Semiconductor Corporation.
© 2004 National Semiconductor Corporation
DS200862
www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Junction Temperature (Note 4)
Soldering Information
+150˚C
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
235˚C
260˚C
ESD Tolerance (Note 2)
Human Body Model
Machine Model
2 KV
200V
Operating Ratings (Note 3)
Supply Voltage (V+ – V−)
Operating Temperature Range
(Note 4)
4.5V to 16V
VIN Differential
2.5V
−40˚C to +85˚C
Input Current
10 mA
Supply Voltages (V+ – V−)
Voltage at Input/Output Pins
Storage Temperature Range
18V
Package Thermal Resistance (Note 4)
5-Pin SOT23
V+ +0.8V, V− −0.8V
265˚C/W
−65˚C to +150˚C
5V Electrical Characteristics
Unless otherwise specified, All limits guaranteed for TJ = 25˚C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (Note 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
BW
−3 dB Bandwidth
AV = +1 (RL = 100Ω)
150
58
MHz
AV = −1 (RL = 100Ω)
AV = −3
BW0.1 dB
FPBW
LSBW
GBW
SR
0.1 dB Gain Flatness
Full Power Bandwidth
-3 dB Bandwidth
18
MHz
MHz
MHz
MHz
V/µs
nV/
AV = +1, VOUT = 2 VPP, −1 dB
AV = +1, VO = 2 VPP (RL = 100Ω)
AV = +1, (RL = 100Ω)
AV = −1
28
32
Gain Bandwidth Product
Slew Rate (Note 8)
59
170
23
en
Input Referred Voltage Noise
f = 10 kHz
f = 1 MHz
f = 10 kHz
f = 1 MHz
15
in
Input Referred Current Noise
Total Harmonic Distortion
1.1
0.7
–65
pA/
THD
f = 5 MHz, VO = 2 VPP, AV = +2
RL = 1 kΩ to V+/2
VO = 2 VPP 0.1%, AV = −1
dBc
ns
ts
Settling Time
,
35
VOS
Input Offset Voltage
1
5
mV
7
IB
Input Bias Current (Note 7)
Input Offset Current
−1.2
34
−2.6
−3.25
800
1400
–0.2
–0.1
µA
nA
IOS
CMVR
Common Mode Input Voltage
Range
CMRR ≥ 50 dB
–0.3
4.1
V
4.0
3.6
72
CMRR
AVOL
Common Mode Rejection Ratio V− ≤ VCM ≤ V+ −1.5V
90
95
dB
dB
Large Signal Voltage Gain
VO = 4 VPP, RL = 2 kΩ to V+/2
86
82
VO = 3.75 VPP, RL = 150Ω to V+/2
74
78
70
VO
Output Swing High
Output Swing Low
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
4.90
4.75
4.94
4.80
0.06
0.20
V
0.10
0.25
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2
5V Electrical Characteristics (Continued)
Unless otherwise specified, All limits guaranteed for TJ = 25˚C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (Note 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
ISC
Output Short Circuit Current
(Note 3)
Sourcing to V+/2
100
75
130
130
mA
Sinking from V+/2
100
70
IOUT
PSRR
IS
Output Current
VO = 0.5V from either Supply
4V ≤ V+ ≤ 6V
+75/−90
80
mA
dB
Power Supply Rejection Ratio
Supply Current
72
No Load
3.7
5.5
mA
8.0
RIN
CIN
ROUT
DG
Common Mode Input
Resistance
AV = +1, f = 1 kHz, RS = 1 MΩ
AV = +1, RS = 100 kΩ
15
MΩ
pF
Ω
Common Mode Input
Capacitance
1.7
Output Resistance Closed Loop RF = 10 kΩ, f = 1 kHz, AV = −1
RF = 10 kΩ, f = 1 MHz, AV = −1
0.1
0.4
Differential Gain
NTSC, AV = +2
RL = 150Ω to V+/2
0.13
%
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
0.10
deg
16V Electrical Characteristics
Unless otherwise specified, All limits guaranteed for TJ = 25˚C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (Note 9)
Symbol
BW
BW0.1 dB 0.1 dB Gain Flatness
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
−3 dB Bandwidth
AV = +1 (RL = 100Ω)
190
60
MHz
AV = −1 (RL = 100Ω)
AV = −2.7
20
MHz
MHz
MHz
V/µs
LSBW
GBW
SR
-3 dB Bandwidth
AV = +1, VO = 2 VPP (RL = 100Ω)
AV = +1, (RL = 100Ω)
AV = −1
35
Gain Bandwidth Product
Slew Rate (Note 8)
62
170
23
en
Input Referred Voltage Noise
f = 10 kHz
nV/
pA/
dBc
f = 1 MHz
f = 10 kHz
f = 1 MHz
15
in
Input Referred Current Noise
Total Harmonic Distortion
1.1
0.7
–64
THD
f = 5 MHz, VO = 2 VPP, AV = +2
RL = 1 kΩ to V+/2
VO = 2 VPP 0.1%, AV = −1
ts
Settling Time
,
35
ns
VOS
Input Offset Voltage
1
5
mV
7
IB
Input Bias Current (Note 7)
Input Offset Current
−1
−2.6
−3.5
800
1800
−0.2
−0.1
µA
nA
IOS
34
CMVR
Common Mode Input Voltage
Range
CMRR ≥ 50 dB
–0.3
15.1
90
V
15.0
14.6
72
CMRR
Common Mode Rejection Ratio V− ≤ VCM ≤ V+ −1.5V
dB
3
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16V Electrical Characteristics (Continued)
Unless otherwise specified, All limits guaranteed for TJ = 25˚C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (Note 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
AVOL
Large Signal Voltage Gain
VO = 15 VPP, RL = 2 kΩ to V+/2
VO = 14 VPP, RL = 150Ω to V+/2
86
82
95
78
dB
74
70
VO
Output Swing High
Output Swing Low
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
RL = 2 kΩ to V+/2
RL = 150Ω to V+/2
Sourcing to V+/2
15.85
15.45
15.90
15.78
0.10
0.21
95
V
0.15
0.55
ISC
Output Short Circuit Current
(Note 3)
60
30
50
15
mA
Sinking from V+/2
75
IOUT
PSRR
IS
Output Current
VO = 0.5V from either Supply
15V ≤ V+ ≤ 17V
100
80
4
mA
dB
Power Supply Rejection Ratio
Supply Current
72
No Load
6.5
mA
MΩ
pF
Ω
7.8
RIN
CIN
ROUT
DG
Common Mode Input
Resistance
AV = +1, f = 1 kHz, RS = 1 MΩ
AV = +1, RS = 100 kΩ
32
Common Mode Input
Capacitance
1.7
Output Resistance Closed Loop RF = 10 kΩ, f = 1 kHz, AV = −1
RF = 10 kΩ, f = 1 MHz, AV = −1
0.1
0.3
Differential Gain
NTSC, AV = +2
RL = 150Ω to V+/2
0.12
%
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
0.12
deg
Note 1: Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5 kΩ in series with 100 pF. Machine Model, 0Ω in series with 200 pF.
Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
<
maximum allowed junction temperature of 150 ˚C Short circuit test is a momentary test. Output short circuit duration is infinite for V
6V at room temperature and
S
>
below. For V
6V, allowable short circuit duration is 1.5 ms.
S
Note 4: The maximum power dissipation is a function of T
, θ , and T . The maximum allowable power dissipation at any ambient temperature is
J(MAX)
JA
A
P
= (T
-T ) / θ . All numbers apply for packages soldered directly onto a PC board.
D
J(MAX) A JA
Note 5: Typical Values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Positive current corresponds to current flowing into the device.
Note 8: Slew rate is the average of the rising and falling slew rates
Note 9: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
>
the device such that T = T . No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
T .
J
A
J
A
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4
Connection Diagram
5-Pin SOT23
20086223
Top View
Ordering Information
Package
Part Number
LMH6640MF
LMH6640MFX
Package Marking
AH1A
Transport Media
NSC Drawing
1k Units Tape and Reel
3k Units Tape and Reel
5-Pin SOT23
MF05A
5
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Typical Performance Characteristics At TJ = 25˚C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF
= 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
IS vs. VS for Various Temperature
IS vs. VCM for Various Temperature
20086220
20086221
IB vs. VS for Various Temperature
IB vs. VS for Various Temperature
20086218
20086219
VOS vs. VS for Various Temperature
(Typical Unit)
IOS vs. VS for Various Temperature
20086216
20086227
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6
Typical Performance Characteristics At TJ = 25˚C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF
=
1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. (Continued)
Positive Output Saturation Voltage vs.
VS for Various Temperature
Negative Output Saturation Voltage vs.
VS for Various Temperature
20086224
20086228
Output Sinking Saturation Voltage vs.
ISINKING for Various Temperature
Output Sourcing Saturation Voltage vs.
ISOURCING for Various Temperature
20086230
20086231
Input Current Noise vs. Frequency
Input Voltage Noise vs. Frequency
20086204
20086205
7
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Typical Performance Characteristics At TJ = 25˚C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF
=
1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. (Continued)
Gain vs. Frequency Normalized
(PIN= −30 dBm)
Gain vs. Frequency Normalized
(PIN=−30dBm)
20086206
20086207
Gain vs. Frequency for Various VS
(PIN = −30 dBm)
Gain vs. Frequency for Various VS
(PIN = −30 dBm)
20086209
20086210
Open Loop Gain & Phase vs. Frequency for
Various Temperature (PIN = −30 dBm)
Relative Gain vs. Frequency for Various Temperature
(PIN = −10 dBm)
20086233
20086232
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8
Typical Performance Characteristics At TJ = 25˚C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF
=
1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. (Continued)
Large Signal Transition
Large Signal Transition
20086213
20086214
Small Signal Pulse Response
Small Signal Pulse Response
20086215
20086208
Large Signal Pulse Response
Large Signal Pulse Response
20086211
20086212
9
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Typical Performance Characteristics At TJ = 25˚C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF
=
1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. (Continued)
PSRR vs. Frequency
CMRR vs. Frequency
20086201
20086217
Closed Loop Output Resistance vs. Frequency
Harmonic Distortion
20086203
20086226
0.1 dB Gain Flatness vs. Frequency Normalized
Output Power vs. Input Power (AV = +1)
20086202
20086229
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10
Typical Performance Characteristics At TJ = 25˚C, V+ = 16 V, V− = 0V, RF = 330Ω for AV= +2, RF
=
1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified. (Continued)
Differential Gain/Phase vs. IRE
20086225
•
•
The sum of all the capacitors and resistors in the R-C
Application Notes
ladder is the total VCOM capacitance and resistance re-
spectively. This total varies from panel to panel; capaci-
tance could range from 50 nF-200 nF and the resistance
could be anywhere from 20Ω-100Ω.
The number of ladder sections has been reduced to a
number (4 sections in this case) which can easily be put
together in the lab and which behaves reasonably close
to the actual load.
With its high output current and speed, one of the major
applications for the LMH6640 is the VCOM driver in a TFT
panel. This application is a specially taxing one because of
the demands it places on the operational amplifier’s output to
drive a large amount of bi-directional current into a heavy
capacitive load while operating under unity gain condition,
which is a difficult challenge due to loop stability reasons.
For a more detailed explanation of what a TFT panel is and
what its amplifier requirements are, please see the Applica-
tion Notes section of the LM6584 found on the web at:
http://www.national.com/ds.cgi/LM/LM6584.pdf
In this example, the LMH6640 was tested under the simu-
lated conditions of total 209 nF capacitance and 54Ω as
shown in Figure 1.
Because of the complexity of the TFT VCOM waveform and
the wide variation in characteristics between different TFT
panels, it is difficult to decipher the results of circuit testing in
an actual panel. The ability to make simplifying assumptions
about the load in order to test the amplifier on the bench
allows testing using standard equipment and provides famil-
iar results which could be interpreted using standard loop
analysis techniques. This is what has been done in this
application note with regard to the LMH6640’s performance
when subjected to the conditions found in a TFT VCOM
application.
Figure 1, shows a typical simplified VCOM application with
the LMH6640 buffering the VCOM potential (which is usually
1
around
⁄2 of panel supply voltage) and looking into the
simplified model of the load. The load represents the cumu-
lative effect of all stray capacitances between the VCOM
node and both row and column lines. Associated with the
capacitances shown, is the distributed resistance of the lines
to each individual transistor switch. The other end of this R-C
ladder is driven by the column driver in an actual panel and
here is driven with a low impedance MOSFET driver (labeled
“High Current Driver”) for the purposes of this bench test to
simulate the effect that the column driver exerts on the VCOM
load.
20086235
FIGURE 1. LMH6640 in a VCOM Buffer Application with
Simulated TFT Load
RS is sometimes used in the panel to provide additional
isolation from the load while RF2 provides a more direct
feedback from the VCOM. RF1, RF2, and RS are trimmed in
the actual circuit with settling time and stability trade-offs
considered and evaluated. When tested under simulated
load conditions of Figure 1, here are the resultant voltage
and current waveforms at the LMH6640 output:
The modeled TFT VCOM load, shown in Figure 1, is based on
the following simplifying assumptions in order to allow for
easy bench testing and yet allow good matching results
obtained in the actual application:
11
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Application Notes (Continued)
20086236
FIGURE 2. VCOM Output, High Current Drive Waveform, & LMH6640 Output Current Waveforms
20086237
1
FIGURE 3. Expanded View of Figure 2 Waveforms showing LMH6640 Current Sinking
⁄2 Cycle
As can be seen, the LMH6640 is capable of supplying up to
160 mA of output current and can settle the output in 4.4 µs.
combination of all these features is not readily available in
the market, especially in the space saving SOT23-5 pack-
age. All this performance is achieved at the low power con-
sumption of 65 mW which is of utmost importance in today’s
battery driven TFT panels.
The LMH6640 is a cost effective amplifier for use in the TFT
VCOM application and is made even more attractive by its
large supply voltage range and high output current. The
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12
Physical Dimensions inches (millimeters)
unless otherwise noted
5-Pin SOT23
NS Product Number MF05A
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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