LMX2216M [NSC]
0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications; 0.1 GHz到2.0 GHz的低噪声放大器/混频器，用于射频个人通信
| 型号： | LMX2216M |
| 厂家： | 
National Semiconductor |
| 描述： | 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications |
| 文件： | 总12页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 1995
LMX2216
0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer
for RF Personal Communications
General Description
The LMX2216 is a monolithic, integrated low noise amplifier
(LNA) and mixer suitable as a first stage amplifier and down-
converter for RF receiver applications. The wideband oper-
ating capabilities of the LMX2216 allow it to function over
frequencies from 0.1 GHz to 2.0 GHz. It is fabricated using
National Semiconductor’s ABiC IV BiCMOS process.
The LMX2216 is available in a narrow-body 16-pin surface
mount plastic package.
Features
Y
Wideband RF operation from 0.1 GHz to 2.0 GHz
Y
No external biasing components necessary
All input and output ports of the LMX2216 are single-ended.
The LNA input and output ports are designed to interface to
a 50X system. The Mixer input ports are matched to 50X.
The output port is matched to 200X. The only external com-
ponents required are DC blocking capacitors. The balanced
architecture of the LMX2216 maintains consistent operating
parameters from unit to unit, since it is implemented in a
monolithic device. This consistency provides manufacturers
Y
3V operation
Y
LNA input and output ports matched to 50X
Y
Mixer input ports matched to 50X, output port matched
to 200X.
Y
Doubly balanced Gilbert cell mixer (single ended input
and output)
Y
Low power consumption
Y
Power down feature
a
significant advantage since tuning proceduresÐoften
Y
needed with discrete designsÐcan be reduced or eliminat-
ed.
Small outline, plastic surface mount package
Applications
Y
The low noise amplifier produces very flat gain over the en-
tire operating range. The doubly-balanced, Gilbert-cell mixer
provides good LO-RF isolation and cancellation of second-
order distortion products. A power down feature is imple-
mented on the LMX2216 that is especially useful for stand-
by operation common in Time Division Multiple Access
(TDMA) and Time Division Duplex (TDD) systems.
Digital European Cordless Telecommunications (DECT)
Y
Portable wireless communications (PCS/PCN, cordless)
Y
Wireless local area networks (WLANs)
Y
Digital cellular telephone systems
Y
Other wireless communications systems
Functional Block/Pin Diagram
TL/W/11814–1
Order Number LMX2216M
See NS Package Number M16A
C
1995 National Semiconductor Corporation
TL/W/11814
RRD-B30M115/Printed in U. S. A.
Pin Description
Pin
No.
Pin
I/O
Description
Name
1
V
CC
M
I
Voltage supply for the mixer. The input voltage level to this pin should be a DC Voltage ranging from
2.85V to 3.15V.
2
3
4
5
6
GND
LNA
Ground
I
I
RF input signal to the LNA. External DC blocking capacitor is required.
IN
GND
GND
Ground
Ground
RF
IN
RF input to the mixer. The RF signal to be down converted is connected to this pin. External DC
blocking capacitor is required.
7
8
GND
Ground
PWDN
I
Power down signal pin. Both the LNA and mixer are powered down when a HIGH level is applied to
this pin (V ).
IH
9
10
11
12
13
14
IF
OUT
O
IF output signal of the mixer. External DC blocking capacitor is required.
GND
LO
Ground
I
Local oscillator input signal to the mixer. External DC blocking capacitor is required.
IN
GND
GND
Ground
Ground
LNA
OUT
O
I
Output of the LNA. This pin outputs the amplified RF signal. External DC blocking capacitor is
required.
15
16
GND
Ground
V
CC
A
LNA supply Voltage. DC Voltage ranging from 2.85V to 3.15V.
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Recommended Operating
Conditions
Supply Voltage (V
)
CC
2.85V–3.15V
b
a
10 C to 70 C
§
Operating Temperature (T )
A
§
0.1 GHz to 2.0 GHz
Supply Voltage (V
)
CC
6.5V
RF
IN
IN
b
a
65 C to 150 C
Storage Temperature (T )
S
§
§
§
LO
0.1 GHz to 2.0 GHz
b a
40 C to 85 C
Operating Temperature (T
)
O
§
2
Electrical Characteristics: LNA
@
b
30 dBm unless otherwise specified.)
e a
e
e
e
50X and f
IN
g
3.0V 5%, T
(V
25 C, Z
§
2.0 GHz
CC
A
o
Symbol
Parameter
Conditions
Min
Typ
Max
8.0
10
Units
mA
mA
I
I
Supply Current
Supply Current
Gain
In Operation
6.5
CC
In Power Down Mode
CC-PWDN
G
9
10
dB
b
b
P
Output 1 dB Compression Point
Output 3rd Order Intercept Point
Single Side Band Noise Figure
Input Return Loss
5.0
5.0
3.0
7.0
dBm
dBm
dB
1dB
OIP3
NF
4.8
15
11
6.0
RL
RL
10
10
dB
IN
Output Return Loss
dB
OUT
@
e
a
e
e
e
2.0 GHz
RF
g
Electrical Characteristics: Mixer (V
3.0V 5%, T
25 C, Z
§
50X, f
CC
e
110 MHz unless otherwise specified.)
A
o
@
1.89 GHz 0 dBm; f
b
e
30 dBm, f
LO
IF
Symbol
Parameter
Conditions
In Operation
Min
Typ
Max
12.0
10
Units
mA
mA
dB
I
I
Supply Current
Supply Current
9.0
CC
In Power Down Mode
CC-PWDN
G
Conversion Gain (Single Side Band)
Output 1 dB Compression Point
Output Third Order Intercept Point
Single Side Band Noise Figure
Double Side Band Noise Figure
LO to RF Isolation
4.0
6.0
C
b
b
9.0
0.0
P
13.0
dBm
dBm
dB
1dB
b
OIP3
3.0
SSB NF
DSB NF
LO-RF
LO-IF
17
14
30
30
15
15
15
200
18
15
dB
20
dB
LO to IF Isolation
20
10
10
dB
RF RL
LO RL
IF RL
RF Return Loss
dB
LO Return Loss
dB
IF Return Loss
dB
Z
IF Port Impedance
X
IF
Electrical Characteristics: Power Down
Symbol
Parameter
Conditions
Min
Typ
Max
Units
b
V
V
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
V
0.8
V
V
IH
CC
0.8
IL
e
e
b
b
I
I
V
V
V
10.0
10.0
10.0
10.0
mA
mA
IH
IL
IH
CC
GND
IL
3
Typical Application Block Diagram
TL/W/11814–2
FIGURE 2
Typical Characteristics
LNA
LNA Current Composition
vs Supply Voltage with
Temperature as a Parameter
LNA P vs P with Supply
OUT IN
Voltage as a Parameter
TL/W/11814–3
TL/W/11814–4
LNA P vs P with
OUT IN
Temperature as a Parameter
LNA P vs P with
OUT IN
Temperature as a Parameter
TL/W/11814–6
TL/W/11814–7
4
Typical Characteristics (Continued)
LNA (Continued)
LNA Gain vs Frequency with Supply
Voltage as a Parameter
LNA Noise Figure vs Frequency with
Supply Voltage as a Parameter
TL/W/11814–8
TL/W/11814–9
LNA Gain vs Frequency with
Temperature as a Parameter
LNA Noise Figure vs Frequency with
Temperature as a Parameter
TL/W/11814–10
TL/W/11814–11
LNA Input Return Loss vs Frequency
with Voltage as a Parameter
LNA Output Return Loss vs Frequency
with Voltage as a Parameter
TL/W/11814–12
TL/W/11814–19
5
Typical Characteristics (Continued)
MIXER
Mixer Gain (Double Sideband)
vs Frequency with Supply
Voltage as a Parameter
Mixer Gain (Double Sideband)
vs Frequency with Temperature
as a Parameter
TL/W/11814–20
TL/W/11814–21
Mixer Noise Figure (Double Sideband)
vs Frequency with Supply
Voltage as a Parameter
Mixer Noise Figure (Double Sideband)
vs Frequency with Temperature
as a Parameter
TL/W/11814–22
TL/W/11814–23
6
Typical Characteristics (Continued)
MIXER (Continued)
Mixer P vs P with Supply
OUT IN
Voltage as a Parameter
Mixer P vs P with Supply
OUT IN
Voltage as a Parameter
TL/W/11814–24
TL/W/11814–25
Mixer P vs P with
OUT IN
Temperature as a Parameter
Mixer P vs P with
OUT IN
Temperature as a Parameter
TL/W/11814–26
TL/W/11814–27
Mixer RF Return Loss
IN
Mixer RF Return Loss
IN
vs Frequency with Supply
Voltage as a Parameter
vs Frequency with Supply
Voltage as a Parameter
TL/W/11814–28
TL/W/11814–29
7
Typical Characteristics (Continued)
MIXER (Continued)
Mixer RF Return Loss
IN
Mixer IF Return Loss
OUT
vs Frequency with Supply
Voltage as a Parameter
vs Frequency with Supply
Voltage as a Parameter
TL/W/11814–30
TL/W/11814–31
Functional Description
TL/W/11814–13
FIGURE 3. Block Diagram of the LMX2216
8
Functional Description (Continued)
Typical Gilbert Cell
THE LNA
The LNA is a common emitter stage with active feedback.
This feedback network allows for wide bandwidth operation
while providing the necessary optimal input impedance for
low noise performance. The power down feature is imple-
mented using a CMOS buffer and a power-down switch. The
power down switch is implemented with CMOS devices.
During power down, the switch is open and only leakage
currents are drawn from the supply.
THE MIXER
The mixer is a Gilbert cell architecture, with the RF input
signal modulating the LO signal and single ended output
taken from the collector of one of the upper four transistors.
The power down circuitry of the mixer is similar to that of the
LNA. The power down switch is used to provide or cut off
bias to the Gilbert cell.
Typical Low Noise Amplifier
TL/W/11814–15
FIGURE 5. Typical Gilbert Cell Circuit Diagram
The Gilbert cell shown above is a circuit which multiplies
two input signals, RF and LO. The input RF voltage differen-
tially modulates the currents on the collectors of the transis-
tors Q1 and Q2, which in turn modulate the LO voltage by
varying the bias currents of the transistors Q3, Q4, Q5, and
Q6. Assuming that the two signals are small, the result is a
product of the two signals, producing at the output a sum
and difference of the frequencies of the two input signals. If
either of these two signals are much larger than the thresh-
TL/W/11814–14
FIGURE 4. Typical LNA Structure
A typical low noise amplifier consists of an active amplifying
element and input and output matching networks. The input
matching network is usually optimized for noise perform-
ance, and the output matching network for gain. The active
element is chosen such that it has the lowest optimal noise
old voltage V , the output will contain other mixing products
T
and higher order terms which are undesirable and may need
to be attenuated or filtered out.
Analysis of the Gilbert cell shows that the output, which is
the difference of the collector currents of Q3 and Q6, is
related to the two inputs by the equation:
figure, F
, an intrinsic property of the device. The noise
MIN
figure of a linear two-port is a function of the source admit-
tance and can be expressed by
V
V
R
n
RF
LO
e
b
e
I
C6 EE
2
2
b
]
B )
G
e
a
b
a
DI
I
I
tanh
tanh
[
F
F
(G
ON
G
)
G
(B
ON
C3
MIN
2V
2V
Ð # J( Ð # J(
G
T
T
G
and the hyperbolic tangent function can be expressed as a
Taylor series
a
e
e
e
where G
jB
G
generator admittance presented to
the input of the two port,
G
3
5
x
x
a
G
jB
generator admittance at which op-
timum noise figure occurs,
e
b
a
b
. . .
ON
ON
tanh(x)
x
3
5
Assuming that the RF and LO signals are sinusoids.
R
empirical constant relating the
sensitivity of the noise figure to
generator admittance.
n
e
e
a
a
V
V
Acos (0
Bcos (0
t
t
w
w
)
RF
RF
LO
RF
LO
)
LO
then
3
A
3
e
a
b
a
a
) . . .
RF
DI
I
Acos (0RF
t
w
)
cos (0RF
t
w
EE
RF
3
Ð
(
3
B
3
a
b
a
a
) . . .
LO
Bcos (0LO
t
w
)
cos (0LO
t
w
#
LO
3
Ð
(
The lowest order term is a product of two sinusoids, yielding
a sum of two sinusoids,
a
a
) t
a
AB
2
cos ((0
a
0
) t
LO
w
a
w
)
LO
RF
RF
w
I
EE
b
b
w
RF
cos ((0
0
)
LO
Ð
RF
LO
(
one of which is the desired intermediate frequency signal.
9
Figures of Merit
GAIN (G)
Many different types of gain are specified in RF engineering.
The type referred to here is called transducer gain and is
defined as the ratio of the power delivered to the load to the
available power from the source,
P
V2OUT/R
V2IN/R
R
V2OUT
OUT
L
S
e
e
e
4
G
P
R
V2IN
L
IN
S
where V
OUT
is the voltage across the load R and V is the
IN
L
generator voltage with internal resistance R . In terms of
S
scattering parameters, transducer gain is defined as
e
G
20 log ( S )
21
l
l
where S is the forward transmission parameter, which can
21
be measured using a network analyzer.
1 dB COMPRESSION POINT (P
)
1dB
TL/W/11814–16
A measure of amplitude Iinearity, 1 dB compression point is
the point at which the actual gain is 1dB below the ideal
linear gain. For a memoryless two-port with weak nonlineari-
ty, the output can be represented by a power series of the
input as
FIGURE 6. Typical P
OUT
–P Characteristics
IN
NOISE FIGURE (NF)
Noise figure is defined as the input signal to noise ratio di-
vided by the output signal to noise ratio. For an amplifier, it
can also be interpreted as the amount of noise introduced
by the amplifier itself seen at the output. Mathematically,
e
a
a
k
3
a
v
k
v
k
v2i
v3i
. . .
o
1
i
2
For a sinusoidal input,
a
G N
a i
S /N
i
S /N
i
N
a
e
v
Acos 0 t
i
i
i
1
e
e
e
F
a
S /N
o
G
S /(N
i
G
N )
i
G N
a i
the output is
o
a
a
a
e
1
2
2
3
NF
10 log (F)
3
e
a
a
A
v
k
A
k
k
A
cos 0 t
1
o
2
1
3
4
#
J
where S and N represent the signal and noise power levels
i i
available at the input to the amplifier, S and N the signal
1
2
1
4
o
o
2
3
a
a
k
A
cos 20
t
k
A
cos 30 t
1
2
1
3
and noise power levels available at the output, G the avail-
a
able gain, and Na the noise added by the amplifier. Noise
figure is an important figure of merit used to characterize the
performance of not only a single component but also the
entire system. It is one of the factors which determine the
system sensitivity.
assuming that all of the fourth and higher order terms are
negligible. For an amplifier, the fundamental component is
the desired output, and it can be rewritten as
3
2
.
a
k
A
1
(k /k ) A
1
1
3
4
Ð
(
IMAGE FREQUENCY, DSB/SSB NF
This fundamental component is larger than k A (the ideally
linear gain) if k
1
0. For most practi-
Image frequency refers to that frequency which is also
down-converted by the mixer, along with the desired RF
component, to the intermediate frequency. This image fre-
quency is located at the same distance away from the LO,
but on the opposite side of the RF. For most mixers, it must
be filtered out before the signal is down-converted; other-
wise, an image-reject mixer must be used. Figure 7 illus-
trates the concept.
l
k
0 and smaller if k
0, and the gain compresses as the ampli-
3
3
k
cal devices, k
3
tude A of the input signal gets larger. The 1 dB compression
point can be expressed in terms of either the input power or
the output power. Measurement of P
increasing the input power while observing the output power
until the gain is compressed by 1 dB.
can be made by
1dB
THIRD ORDER INTERCEPT (OIP )
3
Third order intercept is another figure of merit used to char-
acterize the linearity of a two-port. It is defined as the point
at which the third order intermodulation product equals the
ideal linear, uncompressed, output. Unlike the P
, OIP
1dB
3
involves two input signals. However, it can be shown mathe-
matically (similar derivation as above) that the two are
&
a
figures of merit are illustrated in Figure 6.
closely related and OIP
P
10 dB. Theses two
3
1dB
TL/W/11814–17
FIGURE 7. Input and Output Spectrum of Mixers
10
Figures of Merit (Continued)
Due to the presence of image frequencies and the method
in which noise figure is defined, noise figures can be mea-
sured and specified in two ways: double side band (DSB) or
single side band (SSB). In DSB measurements, the image
frequency component of the input noise source is not fil-
tered and contributes to the total output noise at the inter-
mediate frequency. In SSB measurements. the image fre-
quency is filtered and the output noise is not caused by this
frequency component. In most mixer applications where
only one side band is wanted, SSB noise figure is 3 dB
higher than DSB noise figure.
ates the image frequency. The mixer is shown to use an LO
signal generated by a PLL synthesizer, but, depending on
the type of application, the LO signal could be generated by
a device as simple as a free-running oscillator. The IF output
is then typically filtered by a channel-select filter following
the mixer, and this signal can then be demodulated or go
through another down conversion, depending upon the in-
termediate frequency and system requirements. This exter-
nal filter rejects adjacent channels and also attenuates any
LO feed through. Figure 9 shows a cascade analysis of a
typical RF front-end subsystem in which the LMX2216 is
used. It includes the bandpass filter and the switch through
which the input RF signal goes in a radio system before
reaching the LNA. Typical values are used for the insertion
loss of the various filters in this example.
In this application, the LMX2216 is used in a radio receiver
front end, where it amplifies the signal from the antenna and
then down converts it to an intermediate frequency. The
image filter placed between the LNA and the mixer attenu-
TL/W/11814–18
FIGURE 8. Typical Applications Circuit of the LMX2216
Data per Stage
Gain
Cumulative Data
Ý
1
2
3
4
5
6
Ý
1
2
3
4
5
6
Comp
Filter
N Fig
2.0
OIP3
100.0
100.0
6.0
Gain
N Fig
2.0
IIP3
97.9
96.6
OIP3
95.9
94.0
6.0
b
b
b
b
2.0
0.6
2.0
2.6
9.7
6.7
Switch
LNA
0.6
2.6
b
b
12.3
3.7
6.3
3.7
3.7
b
Filter
Mixer
Filter
3.0
5.8
3.0
3.0
100.0
3.0
6.4
3.0
b
b
13.7
3.0
12.5
9.5
9.6
10.5
10.5
2.0
b
1.0
b
100.0
9.7
System Cumulative Values
Gain
N Fig
IIP
9.5 dB
9.7 dB
b
10.5 dBm
3
b
OIP
1.0 dBm
3
FIGURE 9. Cascade Analysis Example
11
Physical Dimensions inches (millimeters)
JEDEC 16-Lead (0.150 Wide) Small Outline Molded Package (M)
×
Order Number LMX2216M
For Tape and Reel Order Number LMX2216MX
NS Package Number M16A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Corporation
National Semiconductor
Europe
National Semiconductor
Hong Kong Ltd.
National Semiconductor
Japan Ltd.
a
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
Fax:
(
49) 0-180-530 85 86
@
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
Tel: 81-043-299-2309
Fax: 81-043-299-2408
Email: cnjwge tevm2.nsc.com
a
a
a
a
Deutsch Tel:
English Tel:
Fran3ais Tel:
Italiano Tel:
(
(
(
(
49) 0-180-530 85 85
49) 0-180-532 78 32
49) 0-180-532 93 58
49) 0-180-534 16 80
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
相关型号：
©2020 ICPDF网 联系我们和版权申明