NTE123A [NTE]
Silicon Complementary Transistors General Purpose; 硅互补晶体管通用
| 型号： | NTE123A |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors General Purpose |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE123A (NPN) & NTE159M (PNP)
Silicon Complementary Transistors
General Purpose
Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis-
tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from
audio to VHF frequencies.
Features:
D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCBO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/°C
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/°C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
(BR)CBO
NTE123A
I = 10mA, I = 0
C B
40
60
–
–
–
–
V
V
NTE159M
Collector–Base Breakdown Voltage
V
NTE123A
I = 10µA, I = 0
C E
75
60
–
–
–
–
V
V
NTE159M
Emitter–Base Breakdown Voltage
V
(BR)EBO
NTE123A
I = 10µA, I = 0
6
5
–
–
–
–
V
V
E
C
NTE159M
Collector Cutoff Current
NTE123A
I
CEX
V
= 60V, V
= 3V
–
–
10
50
nA
nA
CE
EB(off)
–
–
NTE159M
V
CE
= 30V, V = 500mV
BE
Collector Cutoff Current
NTE123A
I
CBO
V
CB
V
CB
V
CB
V
CB
V
EB
= 60V, I = 0
–
–
–
–
–
–
–
–
–
–
0.01
10
µA
µA
µA
µA
nA
E
= 60V, I = 0, T = +150°C
E
A
NTE159M
= 50V, I = 0
0.01
10
E
= 50V, I = 0, T = +150°C
E
A
Emitter Cutoff Current (NTE123A Only)
I
= 3V, I = 0
10
EBO
C
Base Cutoff Current
NTE123A
I
BL
V
V
= 60V, V
= 3V
–
–
–
–
20
50
nA
nA
CE
EB(off)
NTE159M
= 30V, V
= 500mV
CE
EB(off)
ON Characteristics
DC Current Gain
NTE123A
h
FE
V
= 10V I = 0.1mA, Note 1
C
35
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CE
I = 1mA
C
I = 10mA, Note 1
C
75
–
I = 10mA, T = –55°C
35
–
C
A
I = 150mA, Note 1
C
100
50
300
–
V
V
= 1V, I = 150mA, Note 1
C
CE
= 10V I = 500mA, Not e 1
40
–
CE
C
NTE159M
I = 0.1mA
C
75
–
I = 1mA
C
100
100
100
50
–
I = 10mA
C
–
I = 150mA, Note 1
C
300
–
I = 500mA, Note 1
C
Collector–Emitter Saturation Voltage
V
CE(sat)
NTE123A
I = 150mA, I = 15mA, Note 1
C B
–
–
–
–
–
–
–
–
0.3
1.0
0.4
1.6
V
V
V
V
I = 500mA, I = 50mA, Note 1
C
B
NTE159M
I = 150mA, I = 15mA, Note 1
C B
I = 500mA, I = 50mA, Note 1
C
B
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
ON Characteristics (Cont’d)
Base–Emitter Saturation Voltage
V
BE(sat)
NTE123A
I = 150mA, I = 15mA, Note 1
0.6
–
–
–
–
–
1.2
2.0
1.3
2.6
V
V
V
V
C
B
I = 500mA, I = 50mA, Note 1
C
B
NTE159M
I = 150mA, I = 15mA, Note 1
–
C
B
I = 500mA, I = 50mA
–
C
B
Small–Signal Characteristics
Current Gain–Bandwidth Product
f
T
NTE123A
I = 20mA
V
= 20V, f = 100MHz,
300
200
–
–
–
–
–
–
8
MHz
MHz
pF
C
CE
Note 2
NTE159M
I = 50mA
C
Output Capacitance
C
obo
V = 10V, I = 0, f = 100kHz
CB E
Input Capactiance
NTE123A
C
ibo
V
V
= 0.5V
= 2V
I = 0, f = 100kHz
–
–
–
–
–
25
30
pF
pF
kΩ
kΩ
BE
C
NTE159M
BE
Input Impedance (NTE123A Only)
h
h
I = 1mA
C
V
V
V
V
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
2.0
8.0
ie
CE
I = 10mA
C
0.25
–
–
–
–
–
–
–
–
1.25
8
–4
I = 1mA
C
x 10
x 10
Voltage Feedback Ratio
(NTE123A Only)
re
CE
CE
CE
–4
I = 10mA
C
–
4
h
fe
I = 1mA
C
50
75
5
300
375
35
Small–Signal Current Gain
(NTE123A Only)
I = 10mA
C
Output Admittance (NTE123A Only)
h
oe
I = 1mA
C
µmhos
I = 10mA
C
25
200 µmhos
Collector–Base Time Constant
rb′C
c
(NTE123A Only)
I = 20mA, V = 20V, f = 31.8MHz
E CB
–
–
–
–
150
4
ps
Noise Figure (NTE123A Only)
NF
I = 100µA, V = 10V, R = 1kΩ,
dB
C
CE
S
f = 1kHz
Real Part of Common–Emitter High
Frequency Input Impedance
(NTE123A Only)
Re(h ) I = 20mA, V = 20V, f = 300MHz
–
–
60
Ω
ie
C
CE
Switching Characteristics
NTE123A
Delay Time
V
C
= 30V, V
= 500mV,
t
–
–
–
–
–
–
–
–
10
25
ns
ns
ns
ns
CC
BE(off)
B1
d
I = 150mA, I =– 15mA
Rise Time
Storage Time
Fall Time
t
r
t
s
225
60
V
B1
= 30V, I = 150mA,
CC
C
I
= I = 15mA
B2
t
f
NTE159M
Turn–On Time
V
B1
= 30V, I = 150mA,
t
–
–
–
–
–
–
26
6
45
10
ns
ns
ns
ns
ns
ns
CC
= 15mA
C
on
I
Delay Time
Rise Time
t
d
t
r
20
70
50
20
40
Turn–Off Time
Storage Time
Fall Time
t
off
100
80
V
B1
= 6V, I = 150mA,
C
CC
I
= I = 15mA
B2
t
s
t
f
30
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector
45°
.041 (1.05)
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