NTE2302 [NTE]
Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode; 硅NPN晶体管彩色电视水平偏转输出瓦特/阻尼二极管
| 型号： | NTE2302 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2302
Silicon NPN Transistor
Color TV Horizontal Deflection Output w/Damper Diode
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
D Capable of Being Mounted in a Variety of Methods
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
Test Conditions
= 800V, I = 0
Min
–
Typ Max Unit
I
V
V
V
V
–
–
–
3
–
–
–
–
–
–
–
10
130
–
µA
CBO
CB
EB
CE
CE
E
Emitter Cutoff Current
I
= 4V, I = 0
40
8
mA
EBO
C
DC Current Gain
h
FE
= 5V, I = 1A
C
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Diode Forward Voltage
f
T
= 10V, I = 1A
–
–
MHz
V
C
V
CE(sat)
V
BE(sat)
I = 4A, I = 0.8A
–
5.0
1.5
–
C
B
I = 4A, I = 0.8A
–
V
C
B
V
V
V
I = 5mA, I = 0
1500
800
7
V
(BR)CBO
(BR)CBO
(BR)EBO
C
E
I = 100mA, R = ∞
–
V
C
BE
I = 200mA, I = 0
–
V
E
C
V
F
I
EC
= 5A
–
2
V
Fall Time
t
f
V
B2
= 200V, I = 4A, I = 0.8A,
–
0.7
µs
CC
C
B1
I
= –1.6A, R = 50Ω
L
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
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