NTE2370 [NTE]
Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors; 硅互补晶体管数字瓦特/ 2内置4.7K偏置电阻器
| 型号： | NTE2370 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2367 (NPN) & NTE2368 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 4.7k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC
NTE2367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
NTE2368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
= 40V, I = 0
Min
–
Typ Max Unit
Collector Cutoff Current
I
V
V
V
V
V
–
–
0.1
0.5
330
–
µA
µA
µA
CBO
CB
CE
EB
CE
CE
E
I
= 40V, I = 0
–
CEO
B
Emitter Cutoff Current
DC Current Gain
I
= 5V, I = 0
170
30
250
–
EBO
C
h
FE
= 5V, I = 10mA
C
Current Gain–Bandwidth Product
NTE2367
f
T
= 10V, I = 5mA
C
–
–
–
250
200
3.0
–
–
–
MHz
MHz
pF
NTE2368
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Input OFF Voltage
Symbol
Test Conditions
I = 5mA, I = 0.25mA
Min
–
Typ Max Unit
V
CE(sat)
0.1
–
0.3
–
V
V
C
B
V
I = 10µA, I = 0
50
(BR)CBO
(BR)CEO
C
E
V
I = 100µA, R = ∞
50
–
–
V
C
BE
V
I(off)
V
= 5V, I = 100µA
1.0
1.1
3.29
0.9
–
1.5
2.0
6.11
1.1
V
CE
CE
C
Input ON Voltage
V
I(on)
V
= 200mV, I = 5mA
–
V
C
Input Resistance
R
1
4.7
1.0
kΩ
Input Resistance Ratio
R /R
1 2
Schematic Diagram
Collector
(Output)
Collector
(Output)
R
R
1
1
Base
(Input)
Base
(Input)
R
R
2
2
Emitter
(GND)
Emitter
(GND)
NPN
PNP
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
E C B
.035 (0.9)
.050 (1.27)
.050 (1.27)
.102
(2.6)
Max
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