NTE2540 [NTE]
Silicon NPN Transistor Darlington, High Voltage Switch; 硅NPN晶体管达林顿，高压开关
| 型号： | NTE2540 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Darlington, High Voltage Switch |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2540
Silicon NPN Transistor
Darlington, High Voltage Switch
Features:
D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A)
D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
Test Conditions
VCB = 600V, IE = 0
VEB = 5V, IC = 0
Min Typ Max Unit
–
–
–
–
0.5 mA
IEBO
3
–
mA
V
Collector–Emitter Breakdown Voltage
DC Current Gain
V(BR)CEO IC = 10mA, IB = 0
400
600
100
–
–
hFE
VCE = 2V, IC = 2A
VCE = 2V, IC = 4A
–
–
–
–
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Emitter–Collector Forward Voltage
Collector Output Capacitance
Turn–On Time
VCE(sat) IC = 4A, IB = 40mA
VBE(sat) IC = 4A, IB = 40mA
–
2.0
2.5
3.0
–
V
V
–
–
VECF
Cob
ton
IE = 4A, IB = 0
–
–
V
VCB = 50V, IE = 0, f = 1MHz
–
35
1
pF
µs
µs
µs
–
–
VCC = 100V,
IB1 = –IB2 = 40mA,
Duty Cycle ≤ 1%
Storage Time
tstg
tf
–
8
–
Fall Time
–
5
–
Darlington Internal Schematic
C
E
B
.402 (10.2) Max
.224 (5.7) Max
.173 (4.4)
Max
.114 (2.9)
Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
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