NTE2670 [NTE]
Transistor,;
| 型号： | NTE2670 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2670 (NPN) & NTE2671 (PNP)
Silicon Complementary Transistors
Silicon Perforated Emitter Technology
Audio Power Output
TO3PBL Type Package
Description:
The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that
utilize Perforated Emitter technology specifically designed for high power audio output, disk head po-
sitioners and linear applications.
Features:
D High DC Current Gain − hFE = 25 Min @ IC = 8A
D Excellent Gain Linearity
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector−Emitter Voltage (1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current−Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Note 1. Pulse Test: Pulse Width = 5.0 μs, Duty Cycle ≤10%.
Note 2. Matched complementary pairs are available upon request (NTE2671MCP). Matched com-
plementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector Emitter Sustaining Voltage
Collector Cutoff Current
V
I = 100mA, I = 0
250
−
−
−
−
−
−
V
CEO(sus)
C
B
I
V
= 200V, I = 0
100
100
100
μA
μA
μA
CEO
CE
CE
CE
B
I
I
V
V
= 250V, V
= 1.5V
−
CEX
BE(off)
Emitter Cutoff Current
= 5V, I = 0
−
EBO
C
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Second Breakdown
Symbol
Test Conditions
Min Typ Max Unit
V
V
= 50V, t = 1s (non−repetitive)
= 80V, t = 1s (non−repetitive)
4.0
−
−
−
−
A
A
Second Breakdown Collector Current
with Base Forward Biased
I
CE
S/b
2.25
CE
ON Characteristics
DC Current Gain
h
I = 8A, V = 5V
25
8
−
−
−
−
−
75
−
FE
C
CE
I = 16A, V = 5V
C
CE
Base−Emitter Voltage
V
V
I = 8A, V = 5V
−
2.2
1.4
4.0
V
V
V
BE(on)
C
CE
I = 8A, I = 800mA
−
Collector−Emitter Saturation Voltage
CE(sat)
C
B
I = 16A, I = 3.2A
−
C
B
Dynamic Characteristics
Total Harmonic Distortion at the Output
(h unmatched)
THD
V
= 28.3V, f = 1kHz, P
= 100W
RMS
−
−
4
−
0.8
0.08
−
−
−
%
%
FE
RMS
LOAD
(h matched)
FE
Matched pair h = 50 @ 5A/5V
FE
Current Gain Bandwidth Product
Collector Output Capacitance
f
T
I = 1A, V = 1−V, f = 1MHz
C test
−
MHz
pF
CE
C
ob
V
= 10V, I = 0, f = 1MHz
test
−
500
CB
E
.204 (5.2)
.810(20.57)
Max
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.787
(20.0)
.023 (0.6)
.215 (5.45)
.040 (1.0)
B
C
E
Note: Collector connected to heat sink.
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