NTE281 [NTE]
Silicon Complementary Trasistors Audio Power Amplifier; 硅互补Trasistors音频功率放大器
| 型号： | NTE281 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Trasistors Audio Power Amplifier |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE280 (NPN) & NTE281 (PNP)
Silicon Complementary Trasistors
Audio Power Amplifier
Description:
The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package
designed for use in high power, high fidelity audio frequency amplifier applications.
Features:
D High Power Dissipation: PC = 100W
D Collector–Emitter Breakdown Voltage: V(BR)CEO = 140V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Symbol
Test Conditions
Min
140
5
Typ Max Unit
V
I = 100mA, I = 0
–
–
–
–
V
V
(BR)CEO
C
B
V
I = 10mA, I = 0
E C
(BR)EBO
I
V
= 60V, I = 0
–
–
100
100
140
3.0
2.5
–
µA
µA
CBO
CB
EB
CE
E
Emitter Cutoff Current
I
V
V
= 5V, I = 0
–
–
EBO
C
DC Current Gain
h
FE
= 5V, I = 2A
40
–
–
C
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Current–Gain Bandwidth Product
Output Capacitance
V
CE(sat)
I = 7A, I = 700mA
–
V
V
C
B
V
BE(on)
V
= 5V, I = 7A
–
–
CE
CE
CE
C
f
T
V
V
= 5V, I = 2A
–
5
MHz
pF
C
C
cb
= 10V, I = 0, f = 1MHz
–
220
–
E
Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and
NTE281 (PNP).
.135 (3.45) Max
.875 (22.2)
.350 (8.89)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
相关型号：
NTE284MP
Power Bipolar Transistor, 16A I(C), 180V V(BR)CEO, 2-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
NTE
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