NTE2955 [NTE]
MOSFET N-Channel, Enhancement Mode High Speed Switch; MOSFET N沟道增强模式的高速开关
| 型号： | NTE2955 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET N-Channel, Enhancement Mode High Speed Switch |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2955
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Application:
D CS Switch for CRT Display Monitor
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Avalanche Drain Current (Pulsed, L = 200µH), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.91°C/W
Isolation Voltage (AC for 1 minute, Terminal–to–Case), VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
Gate–Source Leakage
V
V
DS
V
GS
V
DS
V
DS
V
GS
V
GS
V
GS
= 0V, I = 1mA
250
–
–
–
–
V
µA
mA
V
(BR)DSS
D
I
= ±20V, V = 0V
±10
1.0
4.0
GSS
DS
Zero Gate Voltage Drain Current
Gate Threshold Voltage
I
= 250V, V = 0
–
–
DSS
GS
V
= 10V, I = 1mA
2.0
–
3.0
GS(th)
D
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
R
= 10V, I = 5A
0.40 0.52
Ω
DS(on)
D
V
= 10V, I = 5A
–
2.0
9.0
2.6
–
V
DS(on)
D
|y |
fs
= 10V, I = 5A
–
S
D
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Input Capacitance
Symbol
Test Conditions
Min Typ Max Unit
C
iss
V
= 0V, V = 25V, f = 1MHz
–
–
–
–
–
–
–
–
950
90
–
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
V
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
C
oss
C
rss
25
t
20
V
= 150V I = 5A, V = 10V,
d(on)
DD
R
, D
GS
= R = 50Ω
GEN
GS
t
r
25
Turn–Off Delay Time
Fall Time
t
150
40
d(off)
t
f
Diode Forward Voltage
V
SD
I = 5A, V = 0V
0.95
S
GS
.126 (3.2) Dia Max
.181 (4.6)
Max
.405 (10.3)
Max
.114 (2.9)
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)
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