NTE3032 [NTE]
Phototransistor Detector NPN-Si, Visible & IR; 光电晶体管探测器NPN硅，可见光和红外
| 型号： | NTE3032 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Phototransistor Detector NPN-Si, Visible & IR |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE3032
Phototransistor Detector
NPN–Si, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 8mH @ H = 5mW/cm2
D External Base for Added Control
D Annular Passivated Structure for Stability and Reliability
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Static Characteristics
Symbol
Test Conditions
Min Typ Max Unit
Collector Dark Current
ICEO
VCC = 10V, H
0
–
80
5
–
–
–
100 nA
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA
–
–
V
V
Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA
Optical Characteristics
Light Current
IL
tr
tf
VCC = 5V, RL = 100Ω, Note 1
8
–
–
–
–
–
–
mA
µs
Photo Current Rise Time
Photo Current Fall Time
15
15
RL = 100Ω, IL = 1mA (Peak),
Note 2
µs
Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) light–emitting diode (λ µm) with a pulse width equal to or greater than 10µs,
IL = 1mA Peak.
.210 (5.33) Dia
.184 (4.67) Dia
.120 (3.05) Dia
Window on
Center Line
.240
(6.09)
.150 (3.81) Die
Seating Plane
.021
(0.53)
.500
(12.7)
Min
.018 (0.45) Dia Typ
.040 (1.02)
.100 (2.54) Dia
Collector
45°
Emitter
Base
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