NTE3033 [NTE]
Infrared Photodiode; 红外光敏二极管
| 型号： | NTE3033 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Infrared Photodiode |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE3033
Infrared Photodiode
Features:
D High Sensitivity, High Reliability
D Fast Response, High Speed Modulation
D Peak Sensitivity Wavelength Compatible with Infrared Emitters
D Wide Detection Area, Wide Half Angle
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Temperature range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Dark Current
Symbol
Test Conditions
VR = 10V
Min Typ Max Unit
ID
IL
–
35
–
5
50
900
50
5
50
–
nA
µA
nm
ns
Light Current
VR = 10V, L = 1000 1x, Note 1
VR = 10V
Peak Emission Wavelength
Rise Time
λP
tr
–
VR = 10V, RL = 1kΩ
VR = 10V, RL = 100kΩ
VR = 10V, RL = 1kΩ
VR = 10V, RL = 100kΩ
VR = 0, f = 1MHz
Note 2
–
–
–
–
µs
Fall Time
tf
–
50
5
–
ns
–
–
µs
Capacitance
Beam Angle
Ct
–
70
65
–
pF
deg
–
–
Note 1. Source: Tungsten filament lamp 2856°K
Note 2. The angle when the light current is halved.
.276 (7.0)
.111 (2.8)
Device
Center
.315
(8.0)
.197
(5.0)
*
.091
(2.3)
Anode
Cathode
.512
(13.0)
Min
.024 (0.6)
.016 (0.41)
.200 (5.08)
* Denotes Anode mark
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