NTE354 [NTE]

Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz; 硅NPN晶体管射频输出功率PO = 15W @ 175MHz的


型号：	NTE354
厂家：	NTE ELECTRONICS
描述：	Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz 硅NPN晶体管射频输出功率PO = 15W @ 175MHz的晶体射频双极晶体管放大器局域网
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NTE354

Silicon NPN Transistor

RF Power Output

P_O= 15W @ 175MHz

Description:

The NTE354 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and

industrial equipment operating to 250MHz.

Features:

D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with

the Optimum in Transistor Ruggedness.

D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities

D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.

D Exceptional Power Output Stability versus Temperature.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Collector–Base Voltage, V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Emitter–Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current–Continuous, I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A

Total Device Dissipation (T_C= +25°C, Note 1), P_D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114mW/°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Note 1. This device is designed for RF operation. The total device dissipation rating applies only

when the device is operated as an RF amplifier.

Electrical Characteristics: (T_C= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

I = 20mA, I = 0

–

(BR)CEO

I = 10mA, V = 0

C BE

(BR)CES

Emitter–Base Breakdown Voltage

Collector Cutoff Current

I = 2mA, I = 0

E C

(BR)EBO

= 15V, I = 0

–

250 µA

500 µA

CBO

= 15V, V = 0, T = +55°C

–

CES

Electrical Characteristics (Cont’d): (T_C= +25°C unless otherwise specified)

Parameter

ON Characteristics

Symbol

Test Conditions

Min Typ Max Unit

DC Current Gain

= 5V, I = 500mA

–

Dynamic Characteristics

Output Capacitance

= 12.5V, I = 0, f = 100kHz

–

90 120 pF

Functional Test

Common–Emitter Amplifier Power Gain

= 15W, V = 12.5V,

6.3

–

OUT

I max = 1.9A, f = 175MHz

Collector Efficiency

= 15W, V = 12.5V, f = 175MHz

OUT CC

.122 (3.1) Dia

(2 Holes)

.725 (18.42)

.250

(6.35)

.225 (5.72)

.860 (21.84)

.378 (9.56)

.005 (0.15)

.255

(6.5)

.185 (4.7)

.975 (24.77)

.085 (2.14)

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